公开(公告)号：US20050230356A1

公开(公告)日：2005-10-20

申请号：US11142563

申请日：2005-05-31

申请人： Stephen Empedocles ,  Larry Bock ,  Calvin Chow ,  Xianfeng Duan ,  Chunming Niu ,  George Pontis ,  Vijendra Sahi ,  Linda Romano ,  David Stumbo

发明人： Stephen Empedocles ,  Larry Bock ,  Calvin Chow ,  Xianfeng Duan ,  Chunming Niu ,  George Pontis ,  Vijendra Sahi ,  Linda Romano ,  David Stumbo

IPC分类号： B81C99/00 ,  C23F1/00 ,  H01L51/30 ,  H01L51/40

CPC分类号： H01L51/0048 ,  B01J23/52 ,  B81B2203/0361 ,  B81B2207/015 ,  B81C3/005 ,  B81C99/008 ,  B81C2203/057 ,  B82B3/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G11B5/743 ,  G11C2213/81 ,  H01L29/7869 ,  H01L51/0001 ,  H01L51/0595 ,  H01L2924/0002 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/856 ,  Y10S977/857 ,  Y10S977/858 ,  Y10S977/89 ,  H01L2924/00

摘要： Nanostructure manufacturing methods and methods for assembling nanostructures into functional elements such as junctions, arrays and devices are provided. Systems for practicing the methods are also provided.

摘要翻译： 提供了将纳米结构组装成功能元件如结，阵列和器件的纳米结构制造方法和方法。 还提供了实施方法的系统。

公开(公告)号：US07151209B2

公开(公告)日：2006-12-19

申请号：US11142563

申请日：2005-05-31

申请人： Stephen Empedocles ,  Larry Bock ,  Calvin Y. H. Chow ,  Xianfeng Duan ,  Chunming Niu ,  George Pontis ,  Vijendra Sahi ,  Linda T. Romano ,  David Stumbo

发明人： Stephen Empedocles ,  Larry Bock ,  Calvin Y. H. Chow ,  Xianfeng Duan ,  Chunming Niu ,  George Pontis ,  Vijendra Sahi ,  Linda T. Romano ,  David Stumbo

IPC分类号： H01L21/302

CPC分类号： H01L51/0048 ,  B01J23/52 ,  B81B2203/0361 ,  B81B2207/015 ,  B81C3/005 ,  B81C99/008 ,  B81C2203/057 ,  B82B3/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G11B5/743 ,  G11C2213/81 ,  H01L29/7869 ,  H01L51/0001 ,  H01L51/0595 ,  H01L2924/0002 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/856 ,  Y10S977/857 ,  Y10S977/858 ,  Y10S977/89 ,  H01L2924/00

摘要： Nanostructure manufacturing methods and methods for assembling nanostructures into functional elements such as junctions, arrays and devices are provided. Systems for practicing the methods are also provided.

摘要翻译： 提供了将纳米结构组装成功能元件如结，阵列和器件的纳米结构制造方法和方法。 还提供了实施方法的系统。

公开(公告)号：US06962823B2

公开(公告)日：2005-11-08

申请号：US10405992

申请日：2003-04-01

申请人： Stephen Empedocles ,  Larry Bock ,  Calvin Chow ,  Xianfeng Duan ,  Chungming Niu ,  George Pontis ,  Vijendra Sahi ,  Linda T. Romano ,  David Stumbo

发明人： Stephen Empedocles ,  Larry Bock ,  Calvin Chow ,  Xianfeng Duan ,  Chungming Niu ,  George Pontis ,  Vijendra Sahi ,  Linda T. Romano ,  David Stumbo

IPC分类号： B81C99/00 ,  C23F1/00 ,  H01L51/30 ,  H01L51/40 ,  H01L21/00

CPC分类号： H01L51/0048 ,  B01J23/52 ,  B81B2203/0361 ,  B81B2207/015 ,  B81C3/005 ,  B81C99/008 ,  B81C2203/057 ,  B82B3/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G11B5/743 ,  G11C2213/81 ,  H01L29/7869 ,  H01L51/0001 ,  H01L51/0595 ,  H01L2924/0002 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/856 ,  Y10S977/857 ,  Y10S977/858 ,  Y10S977/89 ,  H01L2924/00

摘要： Nanostructure manufacturing methods and methods for assembling nanostructures into functional elements such as junctions, arrays and devices are provided. Systems for practicing the methods are also provided.

公开(公告)号：US20080041814A1

公开(公告)日：2008-02-21

申请号：US11839778

申请日：2007-08-16

申请人： Linda Romano ,  Jian Chen ,  Xiangfeng Duan ,  Robert Dubrow ,  Stephen Empedocles ,  Jay Goldman ,  James Hamilton ,  David Heald ,  Francesco Lemmi ,  Chunming Niu ,  Yaoling Pan ,  George Pontis ,  Vijendra Sahi ,  Erik Scher ,  David Stumbo ,  Jeffery Whiteford

发明人： Linda Romano ,  Jian Chen ,  Xiangfeng Duan ,  Robert Dubrow ,  Stephen Empedocles ,  Jay Goldman ,  James Hamilton ,  David Heald ,  Francesco Lemmi ,  Chunming Niu ,  Yaoling Pan ,  George Pontis ,  Vijendra Sahi ,  Erik Scher ,  David Stumbo ,  Jeffery Whiteford

IPC分类号： B32B9/00 ,  H01B13/00

CPC分类号： C30B29/605 ,  B82Y10/00 ,  C30B11/12 ,  H01L21/02439 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/125 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0048 ,  Y10S977/762 ,  Y10S977/938 ,  Y10T428/139 ,  Y10T428/2902 ,  Y10T428/2949

摘要： The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.

摘要翻译： 本发明涉及收获，整合和利用纳米材料，特别是细长的纳米线材料的方法。 本发明提供了收获纳米线的方法，其包括选择性地蚀刻放置在纳米线生长衬底上以去除纳米线的牺牲层。 本发明还提供了将纳米线整合到电子器件中的方法，包括将圆筒的外表面与纳米线的流体悬浮液接触并滚动纳米线涂覆的圆筒以将纳米线沉积到表面上。 还提供了使用喷墨打印机或孔径以纳米线排列纳米线的方法。 本发明的另外的方面提供了用于防止基于纳米线的晶体管中的栅极短路的方法。 提供了收获和集成纳米线的其他方法。

公开(公告)号：US20060008942A1

公开(公告)日：2006-01-12

申请号：US11117707

申请日：2005-04-29

申请人： Linda Romano ,  Jian Chen ,  Xiangfeng Duan ,  Robert Dubrow ,  Stephen Empedocles ,  Jay Goldman ,  James Hamilton ,  David Heald ,  Francesco Lemmi ,  Chunming Niu ,  Yaoling Pan ,  George Pontis ,  Vijendra Sahi ,  Erik Scher ,  David Stumbo ,  Jeffery Whiteford

发明人： Linda Romano ,  Jian Chen ,  Xiangfeng Duan ,  Robert Dubrow ,  Stephen Empedocles ,  Jay Goldman ,  James Hamilton ,  David Heald ,  Francesco Lemmi ,  Chunming Niu ,  Yaoling Pan ,  George Pontis ,  Vijendra Sahi ,  Erik Scher ,  David Stumbo ,  Jeffery Whiteford

IPC分类号： H01L51/40 ,  H01L21/31 ,  H01L21/20 ,  H01L21/336 ,  B29C47/00 ,  D01F9/12 ,  H01L21/00 ,  D02G3/00

CPC分类号： C30B29/605 ,  B82Y10/00 ,  C30B11/12 ,  H01L21/02439 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/125 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0048 ,  Y10S977/762 ,  Y10S977/938 ,  Y10T428/139 ,  Y10T428/2902 ,  Y10T428/2949

摘要： The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.

摘要翻译： 本发明涉及收获，整合和利用纳米材料，特别是细长的纳米线材料的方法。 本发明提供了收获纳米线的方法，其包括选择性地蚀刻放置在纳米线生长衬底上以去除纳米线的牺牲层。 本发明还提供了将纳米线整合到电子器件中的方法，包括将圆筒的外表面与纳米线的流体悬浮液接触并滚动纳米线涂覆的圆筒以将纳米线沉积到表面上。 还提供了使用喷墨打印机或孔径以纳米线排列纳米线的方法。 本发明的另外的方面提供了用于防止基于纳米线的晶体管中的栅极短路的方法。 提供了收获和集成纳米线的其他方法。

公开(公告)号：US20070012980A1

公开(公告)日：2007-01-18

申请号：US11490637

申请日：2006-07-21

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

IPC分类号： H01L29/94 ,  H01L27/108 ,  H01L29/76 ,  H01L31/119

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

公开(公告)号：US20070228439A1

公开(公告)日：2007-10-04

申请号：US11760382

申请日：2007-06-08

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

IPC分类号： H01L29/786

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

公开(公告)号：US20060211183A1

公开(公告)日：2006-09-21

申请号：US11405864

申请日：2006-04-18

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L29/78696 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  G11C2213/18 ,  H01L24/95 ,  H01L27/1292 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78684 ,  H01L29/7869 ,  H01L33/20 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

公开(公告)号：US20050181587A1

公开(公告)日：2005-08-18

申请号：US11106340

申请日：2005-04-13

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

IPC分类号： H01L21/336 ,  H01L21/38 ,  H01L29/06

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

公开(公告)号：US20070120167A1

公开(公告)日：2007-05-31

申请号：US11602783

申请日：2006-11-21

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

IPC分类号： H01L29/94

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.