中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

47 records (took 0.016 seconds)

    High pressure field emitter, photoionization, plasma initiation and field devices
    31.
    发明授权
    High pressure field emitter, photoionization, plasma initiation and field devices 失效
    高压场发射器，光电离，等离子体引发和现场设备

    公开(公告)号：US08312704B2

    公开(公告)日：2012-11-20

    申请号：US11383847

    申请日：2006-05-17

    Applicant: John Patrick Keady

    Inventor： John Patrick Keady

    IPC: F03H1/00

    CPC classification number: F03H1/0081 ,  F03H1/0012 ,  H01J27/26 ,  H01J2201/30411 ,  H01S5/105

    Abstract: At least one exemplary embodiment is directed to a propulsion device that ionizes a portion of a medium and ExB drifts the ionized portion providing thrust where the ionized portion is created using high pressure field emitters comprising: a substrate layer; a gate layer; a field emitter tip; and a cover layer, wherein the field emitter tip is configured to emit electrons in a region when there is a potential difference between the gate layer and the field emitter tip, where the cover layer separates an ambient environment at a pressure from the region, and where a substantial portion of the electrons pass through the cover layer.

    Abstract translation: 至少一个示例性实施例涉及一种电离介质的一部分的推进装置，并且ExB使用高压场发射器漂移产生离子化部分的离子化部分的离子化部分，其包括：基底层; 门层; 场发射器尖端; 以及覆盖层，其中所述场发射极尖端被配置为在所述栅极层和所述场致发射极尖端之间存在电位差的区域中发射电子，其中所述覆盖层在与所述区域的压力下分离周围环境，以及 其中大部分电子通过覆盖层。

    METHOD FOR PRODUCING A FIELD-EMITTER ARRAY WITH CONTROLLED APEX SHARPNESS
    32.
    发明申请
    METHOD FOR PRODUCING A FIELD-EMITTER ARRAY WITH CONTROLLED APEX SHARPNESS 有权
    用于生产具有受控APEX锐度的场发射阵列的方法

    公开(公告)号：US20110104832A1

    公开(公告)日：2011-05-05

    申请号：US13001449

    申请日：2009-05-29

    Applicant: Eugenie Kirk ,  Soichiro Tsujino

    Inventor： Eugenie Kirk ,  Soichiro Tsujino

    IPC: H01L21/30

    CPC classification number: H01J9/025 ,  H01J1/3044 ,  H01J2201/30411 ,  H01J2209/0223

    Abstract: A method of manufacturing field-emitter arrays by a molding technique includes uniformly controlling a shape of mold holes to obtain field emitter tips having diameters below 100 nm and blunted side edges. Repeated oxidation and etching of a mold substrate formed of single-crystal semiconductor mold wafers is carried out, wherein the mold holes for individual emitters are fabricated by utilizing the crystal orientation dependence of the etching rate.

    Abstract translation: 通过模制技术制造场致发射器阵列的方法包括均匀地控制模具孔的形状以获得直径小于100nm的场发射器尖端和钝化的侧边缘。 进行由单晶半导体模具晶片形成的模具基板的重复氧化和蚀刻，其中通过利用蚀刻速率的晶体取向依赖性来制造各个发光体的模具孔。

    Bright and durable field emission source derived from refractory taylor cones
    36.
    发明授权
    Bright and durable field emission source derived from refractory taylor cones 有权
    源自耐火泰勒锥的明亮耐用的场致发射源

    公开(公告)号：US09524848B2

    公开(公告)日：2016-12-20

    申请号：US14536555

    申请日：2014-11-07

    Applicant: Gregory Hirsch

    Inventor： Gregory Hirsch

    IPC: G21K5/02 ,  H01J37/073 ,  H01J37/08 ,  H01J1/304 ,  H01J9/02

    CPC classification number: H01J37/073 ,  H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J37/08 ,  H01J2201/30411 ,  H01J2237/06341 ,  H01J2237/0805

    Abstract: A method of producing field emitters having improved brightness and durability relying on the creation of a liquid Taylor cone from electrically conductive materials having high melting points. The method calls for melting the end of a wire substrate with a focused laser beam, while imposing a high positive potential on the material. The resulting molten Taylor cone is subsequently rapidly quenched by cessation of the laser power. Rapid quenching is facilitated in large part by radiative cooling, resulting in structures having characteristics closely matching that of the original liquid Taylor cone. Frozen Taylor cones thus obtained yield desirable tip end forms for field emission sources in electron beam applications. Regeneration of the frozen Taylor cones in-situ is readily accomplished by repeating the initial formation procedures. The high temperature liquid Taylor cones can also be employed as bright ion sources with chemical elements previously considered impractical to implement.

    Abstract translation: 一种制造具有改善的亮度和耐久性的场致发射体的方法，其依赖于具有高熔点的导电材料产生液体泰勒锥。 该方法要求用聚焦激光束熔化线基底的端部，同时在材料上施加高的正电位。 随后通过停止激光功率使所得的熔融泰勒锥快速淬火。 在很大程度上通过辐射冷却促进快速淬火，导致具有与原始液体泰勒锥的特征密切相似的特征的结构。 因此获得的冷冻泰勒锥在电子束应用中产生用于场发射源的期望的尖端形式。 通过重复初始形成程序容易地实现冷冻泰勒锥的原位再生。 高温液体泰勒锥也可用作具有以前认为不实际实施的化学元素的明亮离子源。

    METHOD AND DEVICE FOR PRODUCING NANOTIPS
    37.
    发明申请
    METHOD AND DEVICE FOR PRODUCING NANOTIPS 有权
    用于生产纳米粒子的方法和装置

    公开(公告)号：US20160186333A1

    公开(公告)日：2016-06-30

    申请号：US14897769

    申请日：2014-06-13

    Applicant: IHP GMBH-INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS LEIBNIZ-INSTITUT FÜR INNOVATIVE M

    Inventor： Wolfgang Mehr ,  Andre Wolff

    IPC: C23F4/00 ,  H01L21/308 ,  C23C16/50 ,  H01L21/3065

    CPC classification number: C23F4/00 ,  B81C1/00111 ,  C23C16/50 ,  H01J1/3044 ,  H01J9/025 ,  H01J37/073 ,  H01J37/32963 ,  H01J37/32981 ,  H01J2201/30411 ,  H01J2209/0226 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/3081

    Abstract: A method for producing a nanotip from a tip material provides a substrate which consists of the tip material or has the material in the form of a coating, produces a mask from a mask material selected so that, in a predefined reactive ion etching process, the mask material is removed at a lower etching rate than the tip material, and carries out the reactive ion etching process in an etching chamber. The mask material is additionally selected so that a gaseous component is released therefrom during the reactive ion etching process, the gaseous component not being released from the tip material. The method further comprises detecting the gaseous component while the ion etching process is being carried out, repeatedly determining whether an amount of the gaseous component in the etching chamber reaches a predefined lower threshold, and stopping the reactive ion etching process when the lower threshold is reached.

    Abstract translation: 从尖端材料制造纳米尖端的方法提供了由尖端材料组成或具有涂层形式的材料的衬底，从被选择的掩模材料产生掩模，使得在预定义的反应离子蚀刻工艺中， 掩模材料以比尖端材料更低的蚀刻速率被去除，并且在蚀刻室中进行反应离子蚀刻工艺。 附加地选择掩模材料，使得在反应离子蚀刻工艺期间气态组分从其中释放，气体组分不从顶端材料释放。 该方法还包括在进行离子蚀刻处理时检测气体成分，重复地确定蚀刻室中的气体成分的量是否达到预定的下限，并且当达到下限阈值时停止反应离子蚀刻处理 。

    Self-aligned gated emitter tip arrays
    38.
    发明授权
    Self-aligned gated emitter tip arrays 有权
    自对准栅极发射极尖阵列

    公开(公告)号：US09196447B2

    公开(公告)日：2015-11-24

    申请号：US14067668

    申请日：2013-10-30

    Applicant: Massachusetts Institutes of Technology

    Inventor： Arash Akhavan Fomani ,  Luis Fernando Velasquez-Garcia ,  Akintunde Ibitayo Akinwande

    IPC: H01J9/02 ,  H01J1/304 ,  H01L21/00

    CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30411 ,  H01L21/00 ,  H01T19/04 ,  H01T23/00

    Abstract: Methods for fabrication of self-aligned gated tip arrays are described. The methods are performed on a multilayer structure that includes a substrate, an intermediate layer that includes a dielectric material disposed over at least a portion of the substrate, and at least one gate electrode layer disposed over at least a portion of the intermediate layer. The method includes forming a via through at least a portion of the at least one gate electrode layer. The via through the at least one gate electrode layer defines a gate aperture. The method also includes etching at least a portion of the intermediate layer proximate to the gate aperture such that an emitter structure at least partially surrounded by a trench is formed in the multilayer structure.

    Abstract translation: 描述了自对准浇口尖端阵列的制造方法。 该方法在包括衬底，包括设置在衬底的至少一部分上的电介质材料的中间层以及设置在中间层的至少一部分上的至少一个栅电极层的多层结构上进行。 该方法包括通过至少一个栅极电极层的至少一部分形成通孔。 通过至少一个栅极电极层的通孔限定栅极孔径。 该方法还包括蚀刻靠近栅极孔的中间层的至少一部分，使得在多层结构中形成至少部分被沟槽包围的发射极结构。

    Bright and Durable Field Emission Source Derived from Refractory Taylor Cones
    40.
    发明申请
    Bright and Durable Field Emission Source Derived from Refractory Taylor Cones 有权
    来自耐火泰勒锥的明亮耐用场发射源

    公开(公告)号：US20150123010A1

    公开(公告)日：2015-05-07

    申请号：US14536555

    申请日：2014-11-07

    Applicant: Gregory Hirsch

    Inventor： Gregory Hirsch

    IPC: G21K5/02

    CPC classification number: H01J37/073 ,  H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J37/08 ,  H01J2201/30411 ,  H01J2237/06341 ,  H01J2237/0805

    Abstract: A method of producing field emitters having improved brightness and durability relying on the creation of a liquid Taylor cone from electrically conductive materials having high melting points. The method calls for melting the end of a wire substrate with a focused laser beam, while imposing a high positive potential on the material. The resulting molten Taylor cone is subsequently rapidly quenched by cessation of the laser power. Rapid quenching is facilitated in large part by radiative cooling, resulting in structures having characteristics closely matching that of the original liquid Taylor cone. Frozen Taylor cones thus obtained yield desirable tip end forms for field emission sources in electron beam applications. Regeneration of the frozen Taylor cones in-situ is readily accomplished by repeating the initial formation procedures. The high temperature liquid Taylor cones can also be employed as bright ion sources with chemical elements previously considered impractical to implement.

    Abstract translation: 一种制造具有改善的亮度和耐久性的场致发射体的方法，其依赖于具有高熔点的导电材料产生液体泰勒锥。 该方法要求用聚焦激光束熔化线基底的端部，同时在材料上施加高的正电位。 随后通过停止激光功率使所得的熔融泰勒锥快速淬火。 在很大程度上通过辐射冷却促进快速淬火，导致具有与原始液体泰勒锥的特征密切相似的特征的结构。 因此获得的冷冻泰勒锥在电子束应用中产生用于场发射源的期望的尖端形式。 通过重复初始形成程序容易地实现冷冻泰勒锥的原位再生。 高温液体泰勒锥也可用作具有以前认为不实际实施的化学元素的明亮离子源。

Patent Agency Ranking