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    Plasma source apparatus and methods for generating charged particle beams
    31.
    发明授权
    Plasma source apparatus and methods for generating charged particle beams 有权
    用于产生带电粒子束的等离子体源装置和方法

    公开(公告)号：US09076626B2

    公开(公告)日：2015-07-07

    申请号：US14406012

    申请日：2013-05-20

    Applicant: The Welding Institute

    Inventor： Colin Ribton ,  Allan Sanderson

    IPC: H05H1/00 ,  H01J49/10 ,  H01J37/077 ,  H01J37/30

    CPC classification number: H01J37/077 ,  H01J27/18 ,  H01J37/3002 ,  H01J2237/061 ,  H01J2237/063 ,  H01J2237/0817 ,  H01J2237/083 ,  H01J2237/31 ,  H01J2237/3104

    Abstract: A plasma source apparatus for generating a beam of charged particles is disclosed. The apparatus comprises: a plasma chamber provided with an inlet for the ingress of gas and an aperture for the extraction of charged particles from the plasma chamber; a radio frequency (RF) plasma generation unit for generating a plasma inside the plasma chamber, the radio frequency plasma generation unit comprising first and second resonant circuits each tuned to resonate at substantially the same resonant frequency, the first resonant circuit comprising a first antenna and a first, RF power source adapted to drive the first resonant circuit at substantially its resonant frequency, and the second resonant circuit comprising a second antenna, whereby in use an RF signal is induced in the second antenna by the first resonant circuit due to resonant coupling, the second resonant circuit being configured to apply the induced RF signal to the plasma chamber to generate a plasma therein; and a particle accelerating unit for extracting charged particles from the plasma and accelerating the charged particles to form a beam, the particle accelerating unit comprising a second power source configured to apply potential between the plasma chamber and an accelerating electrode, the region between the plasma chamber and the accelerating electrode constituting an acceleration column. The second power source is adapted to output a high voltage relative to that output by the first, RF power source.

    Abstract translation: 公开了一种用于产生带电粒子束的等离子体源装置。 该装置包括：等离子体室，其具有用于进入气体的入口和用于从等离子体室抽出带电粒子的孔; 用于在等离子体室内产生等离子体的射频（RF）等离子体产生单元，所述射频等离子体产生单元包括第一和第二谐振电路，每个谐振电路被调谐以基本相同的谐振频率谐振，所述第一谐振电路包括第一天线和 第一RF电源，其适于以基本上其谐振频率驱动第一谐振电路，并且第二谐振电路包括第二天线，由此在使用中由于谐振耦合由第一谐振电路在第二天线中感应RF信号 所述第二谐振电路被配置为将所述感应RF信号施加到所述等离子体室以在其中产生等离子体; 以及用于从等离子体中提取带电粒子并加速带电粒子以形成束的粒子加速单元，所述粒子加速单元包括构造成在等离子体室和加速电极之间施加电位的第二电源，等离子体室 加速电极构成加速柱。 第二电源适于通过第一RF电源输出相对于该输出的高电压。

    Radiation-Cured Coatings
    33.
    发明申请
    Radiation-Cured Coatings 审中-公开
    辐射固化涂料

    公开(公告)号：US20110217477A1

    公开(公告)日：2011-09-08

    申请号：US13121182

    申请日：2009-09-24

    Applicant: John Topping ,  David Anthony

    Inventor： John Topping ,  David Anthony

    IPC: C08J7/18

    CPC classification number: B05D1/60 ,  B05D1/62 ,  B05D3/068 ,  B05D3/147 ,  B05D7/04 ,  B05D2252/02 ,  B05D2350/60 ,  H01J37/077 ,  H01J2237/316

    Abstract: A process for coating a substrate comprising condensing a radiation curable material on a substrate and curing it using an electron flux 6′ with energy between 6.5 eV and 300 eV. The electron flux 6′ is directed at the substrate (2) either simultaneously or sequentially with delivery of the curable material (5′). Curing is preferably initiated spatially and temporally concurrently with delivery of the material to the substrate. The electron flux is preferably generated using a low pressure gas plasma source with a driving voltage negative relative to the local voltage conditions. The low pressure gas plasma (6′) is preferably magnetically enhanced and, for example, incorporates a magnetron.

    Abstract translation: 一种用于涂覆基底的方法，包括将辐射固化材料冷凝在基底上并使用能量在6.5eV至300eV之间的电子束6'固化。 电子通量6'以可固化材料（5'）的输送同时或顺序地指向基板（2）。 固化优选在空间上和时间上同时发送到基材上。 优选使用具有相对于局部电压条件为负的驱动电压的低压气体等离子体源产生电子通量。 低压气体等离子体（6'）优选是磁性增强的，并且例如包含磁控管。

    Linear electron source, evaporator using linear electron source, and applications of electron sources
    34.
    发明授权
    Linear electron source, evaporator using linear electron source, and applications of electron sources 有权
    线性电子源，蒸发器使用线性电子源，以及电子源的应用

    公开(公告)号：US07928411B2

    公开(公告)日：2011-04-19

    申请号：US12276872

    申请日：2008-11-24

    Applicant: Guenter Klemm ,  Volker Hacker ,  Hans-Georg Lotz

    Inventor： Guenter Klemm ,  Volker Hacker ,  Hans-Georg Lotz

    IPC: H01J49/08 ,  H01J37/305

    CPC classification number: H01J37/077 ,  C23C14/22 ,  C23C14/243 ,  C23C14/30 ,  H01J37/3053

    Abstract: A method of charging a web or foil is described. The method includes guiding a web or foil having a thickness of 10 μm or larger with at least on roller; providing a linear electron source having a housing acting as an anode, the housing having side walls; a slit opening in the housing for trespassing of a linear electron beam, the slit opening defining a length direction of the source; a cathode being arranged within the housing and having a first side facing the slit opening; at least one gas supply for providing a gas into the housing; and a power supply for providing a high voltage between the anode and the cathode; and emitting the linear electron beam, wherein the high voltage is adjusted for providing an electron energy to implant electrons of the electron beam within the web or foil.

    Abstract translation: 描述了对网或箔进行充电的方法。 该方法包括至少在辊上引导具有10μm或更大厚度的纤维网或箔; 提供具有用作阳极的壳体的线性电子源，所述壳体具有侧壁; 所述壳体中的狭缝开口用于侵入线性电子束，所述狭缝开口限定所述源的长度方向; 阴极布置在壳体内并且具有面向狭缝开口的第一侧面; 用于将气体提供到壳体中的至少一个气体供应装置; 以及用于在阳极和阴极之间提供高电压的电源; 并发射线性电子束，其中调节高电压以提供电子能量以在电子束或箔内注入电子束的电子。

    Source for providing an electron beam of settable power
    35.
    发明授权
    Source for providing an electron beam of settable power 失效
    用于提供可设置电源的电子束的源

    公开(公告)号：US07911120B2

    公开(公告)日：2011-03-22

    申请号：US10497894

    申请日：2002-12-06

    Applicant: Ana Lacoste ,  Jacques Pelletier ,  Yves Alban-Marie Arnal

    Inventor： Ana Lacoste ,  Jacques Pelletier ,  Yves Alban-Marie Arnal

    IPC: H01J7/24

    CPC classification number: H01J37/077 ,  H01J3/025 ,  H01J2237/0041

    Abstract: The invention concerns a source supplying an adjustable energy electron beam, comprising a plasma chamber (P) consisting of an enclosure (1) having an inner surface of a first value (S1) and an extraction gate (2) having a surface of a second value (S2), the gate potential being different from that of the enclosure and adjustable. The invention is characterized in that the plasma is excited and confined in multipolar or multidipolar magnetic structures, the ratio of the second value (S2) over the first value (S1) being close to: D=1/β √2πme/mi exp (−½), wherein: β is the proportion of electrons of the plasma P, me the electron mass, and mi is the mass of positively charged ions.

    Abstract translation: 本发明涉及提供可调节能量电子束的源，包括由具有第一值（S1）的内表面的外壳（1）和具有第二值的表面的抽出栅极（2）组成的等离子体室（P） 值（S2），门电位与外壳不同，可调。 本发明的特征在于等离子体被激发并限制在多极或多极磁结构中，第二值（S2）超过第一值（S1）的比接近于：D = 1 /＆bgr; √2＆pgr; me / mi exp（-½），其中：＆bgr; 是等离子体P的电子的比例，me是电子质量，mi是带正电荷的离子的质量。

    Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams
    36.
    发明授权
    Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams 有权
    非双极射频等离子体电子源以及用于产生电子束的系统和方法

    公开(公告)号：US07875867B2

    公开(公告)日：2011-01-25

    申请号：US12327639

    申请日：2008-12-03

    Applicant: Noah Hershkowitz ,  Benjamin Longmier ,  Scott Baalrud

    Inventor： Noah Hershkowitz ,  Benjamin Longmier ,  Scott Baalrud

    IPC: H01J27/02 ,  H05H1/24

    CPC classification number: H01J37/077 ,  F03H1/0025 ,  H01J3/025 ,  H01J2237/31

    Abstract: An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and/or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.

    Abstract translation: 电子产生装置通过电子鞘提取从RF场产生的等离子体中的电子。 电子鞘位于负偏压导电表面一端的接地环附近，通常为圆柱体。 在稳态轴向磁场的存在下，提取的电子通过接地环。 等离子体中足够大的磁场和/或RF功率允许螺旋形血浆产生。 与电子损失面积相比，离子损失面积足够大，以允许离开等离子体的所有电子的全非双极萃取。 负偏置导电表面中的空隙允许由天线提供的时变磁场感应地耦合到导电表面内的等离子体。 导电表面用作法拉第屏蔽，其减少任何随时间变化的电场进入导电表面，即阻止天线和等离子体之间的电容耦合。

    Electron beam treatment apparatus
    39.
    发明授权
    Electron beam treatment apparatus 有权
    电子束处理装置

    公开(公告)号：US07049606B2

    公开(公告)日：2006-05-23

    申请号：US10698726

    申请日：2003-10-30

    Applicant: Alexandros T. Demos ,  Hari K. Ponnekanti ,  Jun Zhao ,  Helen R. Armer

    Inventor： Alexandros T. Demos ,  Hari K. Ponnekanti ,  Jun Zhao ,  Helen R. Armer

    IPC: H01J37/30

    CPC classification number: H01J37/317 ,  H01J3/025 ,  H01J37/077

    Abstract: One embodiment of the present invention is an electron beam treatment apparatus that includes: (a) a chamber; (b) a cathode having a surface of relatively large area that is exposed to an inside of the chamber; (c) an anode having holes therein that is disposed inside the chamber and spaced apart from the cathode by a working distance; (d) a wafer holder disposed inside the chamber facing the anode; (e) a source of negative voltage whole output is applied to the cathode to provide a cathode voltage; (f) a source of voltage whose output is applied to the anode; (g) a gas inlet adapted to admit gas into the chamber at an introduction rate; and (h) a pump adapted to exhaust gas from the chamber at an exhaust rate, the introduction rate and the exhaust rate providing a gas pressure in the chamber; wherein values of cathode voltage, gas pressure, and the working distance are such that there is no arcing between the cathode and anode and the working distance is greater than an electron mean free path.

    Abstract translation: 本发明的一个实施例是一种电子束处理装置，包括：（a）室; （b）具有暴露于所述室内部的相对较大面积表面的阴极; （c）其中具有孔的阳极，其设置在室内并与阴极间隔开工作距离; （d）设置在面向阳极的腔室内的晶片保持器; （e）将负电压全输出源施加到阴极以提供阴极电压; （f）其输出端施加到阳极的电压源; （g）气体入口，其适于以引入速率将气体引入所述腔室; 以及（h）适于以排气速度从所述室排出气体的泵，所述引入速率和排气速率在所述室中提供气体压力; 其中阴极电压，气体压力和工作距离的值使得阴极和阳极之间没有电弧，并且工作距离大于电子平均自由程。

    Electron flood apparatus and ion implantation system
    40.
    发明申请
    Electron flood apparatus and ion implantation system 有权
    电子洪水装置和离子注入系统

    公开(公告)号：US20050116156A1

    公开(公告)日：2005-06-02

    申请号：US10942619

    申请日：2004-09-16

    Applicant: Hiroyuki Ito ,  Yasuhiko Matsunaga ,  Hiroji Hanawa

    Inventor： Hiroyuki Ito ,  Yasuhiko Matsunaga ,  Hiroji Hanawa

    IPC: C23C14/48 ,  H01J37/077 ,  H01J37/08 ,  H01J37/20 ,  H01J37/317 ,  H01L21/265

    CPC classification number: H01J37/077 ,  H01J37/3171 ,  H01J2237/0044 ,  H01J2237/06375

    Abstract: An electron flood apparatus 1 of the present invention comprises a chamber 22 having a first part 22a made of conductive material and a second part 22b made of insulating material, and extending along a predefined closed curve Ax. A coil 18 is provided outside the first part 22a to generate a magnetic field in a direction intersecting with the surface formed by the predefined closed curve Ax. The coil 18 and the chamber 22 are inductively coupled by the magnetic field. Since the inert gas plasma is generated in the chamber 22 mainly by inductive coupling, electrons contained in the plasma have a low energy. Here, by applying voltage to an electrode 21, electrons having a low energy in the chamber 22 are emitted from an opening 14.

    Abstract translation: 本发明的电子洪水装置1包括具有由导电材料制成的第一部分22a和由绝缘材料制成并沿预定的闭合曲线Ax延伸的第二部分22b的腔室22。 线圈18设置在第一部分22a外部，以在与由预定闭合曲线Ax形成的表面相交的方向上产生磁场。 线圈18和腔室22通过磁场感应耦合。 由于主要通过电感耦合在室22中产生惰性气体等离子体，因此包含在等离子体中的电子具有低能量。 这里，通过向电极21施加电压，在室22中具有低能量的电子从开口14发射。

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