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    WAVEGUIDE ELEMENT
    32.
    发明申请
    WAVEGUIDE ELEMENT 有权
    波形元件

    公开(公告)号：US20160006215A1

    公开(公告)日：2016-01-07

    申请号：US14768375

    申请日：2014-03-06

    申请人： CANON KABUSHIKI KAISHA

    发明人： Yasushi Koyama ,  Yoshinori Tateishi

    IPC分类号： H01S5/20 ,  H01S5/34 ,  H01S5/10 ,  H01Q9/04

    CPC分类号： H01S5/2031 ,  G02B6/1226 ,  H01P3/121 ,  H01Q9/045 ,  H01S5/1028 ,  H01S5/34 ,  H03B7/08 ,  H03B2200/0084

    摘要： Provided is a waveguide element, including: a waveguide for guiding an electromagnetic wave; a resonance antenna for radiating or receiving the electromagnetic wave, the resonance antenna being arranged at a part of the waveguide for radiating or receiving the electromagnetic wave; and an impedance matching portion for matching an impedance of the waveguide with an impedance of the resonance antenna so as to couple the waveguide to the resonance antenna. The waveguide includes: a first conductor layer and a second conductor layer each having a negative dielectric constant real part for the electromagnetic wave; and a core layer arranged between the first conductor layer and the second conductor layer. The core layer has one of a gain of the electromagnetic wave and nonlinearity of carriers for the electromagnetic wave.

    摘要翻译： 提供一种波导元件，包括：用于引导电磁波的波导; 用于辐射或接收电磁波的共振天线，所述谐振天线布置在用于辐射或接收电磁波的波导的一部分处; 以及阻抗匹配部分，用于将波导的阻抗与谐振天线的阻抗匹配，以将波导耦合到谐振天线。 波导包括：第一导体层和第二导体层，每个具有用于电磁波的负介电常数实部; 以及布置在所述第一导体层和所述第二导体层之间的芯层。 核心层具有电磁波的增益和电磁波的载波的非线性之一。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    33.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的半导体器件和制造方法

    公开(公告)号：US20150349496A1

    公开(公告)日：2015-12-03

    申请号：US14697908

    申请日：2015-04-28

    申请人： RENESAS ELECTRONICS CORPORATION

    发明人： Fumito MIYASAKA

    IPC分类号： H01S5/343 ,  H01S5/32

    CPC分类号： H01S5/34333 ,  H01S5/02296 ,  H01S5/106 ,  H01S5/164 ,  H01S5/221 ,  H01S5/2272 ,  H01S5/3202 ,  H01S5/32341 ,  H01S5/34 ,  H01S5/34346

    摘要： To provide a semiconductor laser that suppresses end face destruction due to catastrophic optical damage (COD) to a light emission end face and has high output characteristics.An n-type clad layer, a current block layer, an active layer, and a p-type clad layer are provided over an n-type substrate whose major plane has an off-angle in a direction from a (0001) plane. For example, the current block layer is arranged on both sides of a current constriction area. Then, the current block layer is arranged so as to be retracted from a cleavage plane (line). In this case, in the active layer having a quantum well structure that is crystal-grown over the n-type clad layer and the current block layer, the layer thickness of a window area from the cleavage plane (line) up to the end part of the current block layer is smaller than the layer thickness of the current constriction area (area between the current block layers). As a result, the band gap of the active layer in the window area becomes large, and thus it is possible to suppress end face destruction due to the COD.

    摘要翻译： 提供半导体激光器，其抑制由于对发光端面的灾难性光学损伤（COD）造成的端面破坏并具有高输出特性。 在n型衬底上设置n型覆盖层，电流阻挡层，有源层和p型覆盖层，该n型衬底的主面在（1-100）方向上具有偏离角 0001）面。 例如，当前阻挡层布置在电流收缩区域的两侧。 然后，将当前的阻挡层布置成从解理面（线）缩回。 在这种情况下，在具有在n型覆盖层和当前阻挡层上晶体生长的量子阱结构的有源层中，从解理面（线）到端部的窗口区域的层厚度 当前阻挡层的厚度小于电流收缩区域（当前阻挡层之间的面积）的层厚度。 结果，窗口区域中的活性层的带隙变大，因此可以抑制由于COD引起的端面破坏。

    VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE AND VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAY DEVICE
    34.
    发明申请
    VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE AND VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAY DEVICE 有权
    垂直孔表面发射激光器件和垂直孔表面激光阵列器件

    公开(公告)号：US20150063394A1

    公开(公告)日：2015-03-05

    申请号：US14538007

    申请日：2014-11-11

    申请人： MURATA MANUFACTURING CO., LTD.

    发明人： Keiji IWATA ,  Ippei MATSUBARA ,  Takayuki KONA ,  Hiroshi WATANABE ,  Masashi YANAGASE

    IPC分类号： H01S5/183 ,  H01S5/34

    CPC分类号： H01S5/183 ,  H01L24/75 ,  H01L24/83 ,  H01S5/0208 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/34 ,  H01S5/3432 ,  H01S5/423

    摘要： A cathode electrode, cathode pad electrodes, cathode wiring electrodes, an anode electrode, an anode pad electrode, and an anode wiring electrode are disposed on the surface of a vertical-cavity surface-emitting laser device. A light-emitting-region multilayer portion having active layers sandwiched by clad layers and DBR layers is formed directly below the anode electrode. A region where the light-emitting-region multilayer portion is formed serves as a light-emitting region. The light-emitting region is positioned closer to one end of the first direction than is a suction region onto which a flat collet sucks with respect to the first direction, in such a way that the light-emitting region is substantially in contact with or spaced a predetermined distance from the suction region.

    摘要翻译： 阴极电极，阴极焊盘电极，阴极布线电极，阳极电极，阳极焊盘电极和阳极引线电极设置在垂直腔表面发射激光器件的表面上。 在阳极电极正下方形成具有被覆层和DBR层夹持的活性层的发光区域多层部分。 形成发光 - 区域多层部分的区域用作发光区域。 发光区域比平坦夹头相对于第一方向吸入的吸引区域更靠近第一方向的一端，使得发光区域基本上接触或间隔开 距离抽吸区域预定的距离。

    Semiconductor laser with cathode metal layer disposed in trench region
    35.
    发明授权
    Semiconductor laser with cathode metal layer disposed in trench region 有权
    具有阴极金属层的半导体激光器设置在沟槽区域中

    公开(公告)号：US08923357B2

    公开(公告)日：2014-12-30

    申请号：US13802239

    申请日：2013-03-13

    申请人： Seagate Technology LLC

    发明人： Scott Eugene Olson

    IPC分类号： H01S3/097 ,  H01S5/024 ,  H01S5/20 ,  H01S5/042 ,  G02B6/42 ,  G02B6/43

    CPC分类号： H01S5/0425 ,  G02B6/4274 ,  G02B6/43 ,  H01L33/382 ,  H01L33/385 ,  H01L33/387 ,  H01S5/02248 ,  H01S5/02272 ,  H01S5/02453 ,  H01S5/042 ,  H01S5/20 ,  H01S5/2202 ,  H01S5/34

    摘要： A laser diode includes a substrate and a junction layer disposed on the substrate. The junction layer forms a quantum well of the laser diode. The laser diode includes a junction surface having at least one channel that extends through the junction layer to the substrate. The at least one channel defines an anode region and a cathode region. A cathode electrical junction is disposed on the junction surface at the cathode region, and an anode electrical junction is disposed on the junction surface and coupled to the junction layer at the anode region. A cathode metal layer is disposed in at least a trench region of the channel. The cathode metal layer couples the substrate to the cathode electrical junction.

    摘要翻译： 激光二极管包括衬底和布置在衬底上的接合层。 结层形成激光二极管的量子阱。 激光二极管包括具有至少一个通道的接合面，该通道延伸穿过接合层到基底。 至少一个通道限定阳极区域和阴极区域。 阴极电接点设置在阴极区域的结表面上，并且阳极电连接点设置在接合面上并且在阳极区域处耦合到接合层。 阴极金属层设置在通道的至少沟槽区域中。 阴极金属层将衬底耦合到阴极电连接。

    Tunable device, method of manufacture, and method of tuning a laser
    37.
    发明授权
    Tunable device, method of manufacture, and method of tuning a laser 有权
    可调谐装置，制造方法以及调谐晶体管的方法

    公开(公告)号：US08792523B1

    公开(公告)日：2014-07-29

    申请号：US13889226

    申请日：2013-05-07

    申请人： Matthew H. Kim

    发明人： Matthew H. Kim

    IPC分类号： H01S3/10

    CPC分类号： H01S5/0607 ,  B82Y20/00 ,  H01L29/12 ,  H01L29/78 ,  H01L29/84 ,  H01S5/02264 ,  H01S5/3201 ,  H01S5/34

    摘要： This description relates to an apparatus, a method of manufacturing, and a method of tuning optical and/or electrical parameters of semiconductor devices and materials, thin film materials, or other devices. In one example, a laser is tuned to produce an adjustable output wavelength by coupling the laser to a tuning material or base such as, for example, a piezoelectric base using a suitable attachment method. The laser includes of a tunable material that is sensitive to stress and/or strain. Stress and/or strain applied to the laser from the tuning material results in an electronically variable output wavelength. As an example, applying a voltage to a piezoelectric base that serves as a tuning material can cause the base to expand or contract, and the expansions and contractions from the base are coupled to the tunable material of the laser, thus varying the wavelength of the output light from the laser. Additionally, other devices that are sensitive to stress and/or strain can be adjoined in a similar manner and can result in an electronically variable output of the devices. Examples of other embodiments are also disclosed herein.

    摘要翻译： 本说明书涉及一种调整半导体器件和材料，薄膜材料或其它器件的光学和/或电学参数的设备，制造方法和方法。 在一个示例中，通过使用合适的附接方法将激光器耦合到调谐材料或基底，例如压电基座，来调整激光器以产生可调输出波长。 激光器包括对应力和/或应变敏感的可调谐材料。 从调谐材料施加到激光器的应力和/或应变导致电子可变输出波长。 作为示例，向用作调谐材料的压电基底施加电压可能导致基体膨胀或收缩，并且从基底的膨胀和收缩与激光器的可调谐材料耦合，因此改变了波长 从激光输出光。 此外，对应力和/或应变敏感的其他器件可以以相似的方式邻接并且可以导致器件的电子可变输出。 本文还公开了其它实施例的示例。

    LOW-LOSS FLEXIBLE META-MATERIAL AND METHOD OF FABRICATING THE SAME
    40.
    发明申请
    LOW-LOSS FLEXIBLE META-MATERIAL AND METHOD OF FABRICATING THE SAME 审中-公开
    低损失柔性元素及其制备方法

    公开(公告)号：US20130321902A1

    公开(公告)日：2013-12-05

    申请号：US13830695

    申请日：2013-03-14

    申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

    发明人： Choon Gi CHOI

    IPC分类号： H01S5/34 ,  G02B1/00

    CPC分类号： H01S5/34 ,  B82Y20/00 ,  G02B1/007 ,  G02F2202/30 ,  H01S5/041 ,  H01S5/1046 ,  H01S5/36 ,  Y10S977/755 ,  Y10S977/774

    摘要： Provided are a meta-material and a method of fabricating the same. the metal-material may include a substrate, a metal layer on the substrate, and an active gain medium layer on the metal layer. The active gain medium layer and the metal layer may be configured to define hole patterns that may be periodically arranged to have a space smaller than a wavelength of an ultraviolet light, such that the active gain medium layer and the metal layer exhibit a negative refractive index in a wavelength region of the ultraviolet light.

    摘要翻译： 提供一种超材料及其制造方法。 金属材料可以包括基底，基底上的金属层和金属层上的活性增强介质层。 有源增益介质层和金属层可以被配置为限定可以周期性地布置成具有小于紫外光的波长的空间的孔图案，使得有源增益介质层和金属层呈现负折射率 在紫外线的波长区域。