Abstract:
A memory system includes a master device, such as a graphics controller or processor, and an integrated circuit memory device operable in a dual column addressing mode. The integrated circuit memory device includes an interface and column decoder to access a row of storage cells or a page in a memory bank. During a first mode of operation, a first row of storage cells in a first memory bank is accessible in response to a first column address. During a second mode of operation, a first plurality of storage cells in the first row of storage cells is accessible in response to a second column address during a column cycle time interval. A second plurality of storage cells in the first row of storage cells is accessible in response to a third column address during the column cycle time interval. The first and second pluralities of storage cells are concurrently accessible from the interface.
Abstract:
Conventional bias circuits exhibit a number of limitations, including the time required to power-up a bias circuit following a low-power state. Large current surges in the supply network induce ringing, further complicating a power-up process. Example embodiments reduce power-up time and minimize current surges in the supply by selectively charging and discharging capacitance to the circuit during power-up and power-down of the bias circuit.
Abstract:
Described are a system and method to control interface timing and/or voltage operations of signals transmitted between devices. A processor may be coupled through one or more bus interfaces of a bus to one or more corresponding interface timing and/or voltage comparison circuits and corresponding interface timing and/or voltage adjustment circuits.
Abstract:
The present disclosure describes one embodiment of an operating center server for managing contact information and user identifiers of users who communicate with others using a plurality of different communication platforms that operate on disparate networks (e.g., a cellular network or a wireless local area network). The operating center server converges cellular connectivity services (e.g., cellular calls or SMS messages) with internet protocol (IP) services (e.g., email or VOIP calls) and provides these services to terminal devices regardless of the specific network connectivity available to the devices.
Abstract:
The disclosed embodiments relate to components of a memory system that support timing-drift calibration. In specific embodiments, this memory system contains a memory device (or multiple devices) which includes a clock distribution circuit and an oscillator circuit which can generate a frequency, wherein a change in the frequency is indicative of a timing drift of the clock distribution circuit. The memory device also includes a measurement circuit which is configured to measure the frequency of the oscillator circuit. Additionally, the memory system contains a memory controller which can transmit a request to the memory device to trigger the memory device to measure the frequency of the oscillator circuit. The memory controller is also configured to receive the measured frequency from the memory device and uses the measured frequency to determine the timing drift in the memory device.
Abstract:
A semiconductor IC device comprises a timing circuit to transfer a timing signal, the timing circuit being configured to receive a first test signal and to effect a delay in the timing signal in response to the first test signal, the first test signal including a first timing event. The semiconductor IC device further comprises an interface circuit configured to transfer the data signal in response to the timing signal, the interface circuit being further configured to receive a second test signal and to effect a delay in the data signal in response to the second test signal, the second test signal including a second timing event that is related to the first timing event according to a test criterion.
Abstract:
A system includes a plurality of memory devices arranged in a fly-by topology, each of the memory devices having on-die termination (ODT) circuitry for connection to an address and control (RQ) bus. The ODT circuitry has at least one input for controlling termination of one or more signal lines of the RQ bus. Application of a first logic level to the at least one input enables termination of the one or more signal lines. Application of a second logic level to the at least one input disables termination of the one or more signal lines.
Abstract:
A data signal is transmitted from a first circuit to a second circuit, with noise and/or jitter added to the data signal by supply noise in the power distribution network in the first circuit and/or a second circuit being effectively canceled out by adjustment of the reference voltage and/or the phase of the sampling clock used for sampling of the data signal in a manner that effectively mimics such noise and/or jitter added to the data signal. The second circuit uses a filter that has the impedance profile and/or the jitter profile of such power distribution network. The bus weight and/or the number of switching bits in the data pattern transmitted from the first circuit to the second circuit is applied to the filter to determine the adjustment to be made to the reference voltage or the phase of the sampling clock.
Abstract:
Termination of a high-speed signaling link is effected by simultaneously engaging on-die termination structures within multiple integrated-circuit memory devices disposed on the same memory module, and/or within the same integrated-circuit package, and coupled to the high-speed signaling link.
Abstract:
In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.