Abstract:
A multichip module comprises at least two semiconductor chips wherein each has a row of bonding pads formed on the active surface thereof and disposed along one side edge thereof. The semiconductor chips are mounted to a substrate in a stacking arrangement wherein the upper chip is attached to the active surface of the lower chip in a manner that no portion of the upper chip interferes with a vertical line of sight of each bond pad of the lower chip to permit wire bonding thereof. Therefore, all semiconductor chips can be wire bonded simultaneously after stacking the chips on the substrate. This allows wire bonding of all chips to be completed in a single step so as to increase UPH (unit per hour), thereby reducing cost for manufacturing the MCM.
Abstract:
A method of manufacturing a solar cell includes the steps of: providing a substrate having a front side, a back side and a doped region; forming a conductor layer on the front side; firing the conductor layer at a temperature such that the conductor layer is formed with a first portion embedded into the doped region and a second portion other than the first portion; forming an anti-reflection coating (ARC) layer on the front side and the second portion, wherein the ARC layer covers the conductor layer so that the second portion of the conductor layer is disposed in the ARC layer; and removing the ARC layer on the conductor layer so that the conductor layer has an exposed surface exposed out of the ARC layer, wherein the exposed surface of the conductor layer is substantially flush with a first exposed surface of the ARC layer.
Abstract:
A method of manufacturing a solar cell comprises the steps of: forming a lower conductor layer on a front side of a substrate; firing the lower conductor layer at a first temperature to form a first portion embedded into a doped region of the substrate and a second portion; forming an anti-reflection coating (ARC) layer on the front side and the second portion, wherein the ARC layer covers the lower conductor layer such that the second portion is disposed in the ARC layer; forming an upper conductor layer, corresponding to the lower conductor layer and electrically connected to the lower conductor layer, on the ARC layer; and firing the upper conductor layer at a second temperature to form a first portion embedded into the ARC layer and a second portion, which is exposed out of the ARC layer.
Abstract:
The present invention relates to an image transfer process. The process includes the steps of: a) providing an image carrying device including at least one photoluminescent surface; b) displaying a luminous image on a display surface of a light-emitting medium; and c) positioning the display surface of the light-emitting medium that is displaying the luminous image at a distance from the at least one photoluminescent surface of the image carrying device shorter than a predetermined effective distance, for a predetermined period of time.
Abstract:
The described embodiments of mechanisms of forming connectors for package on package enable smaller connectors with finer pitch, which allow smaller package size and additional connections. The conductive elements on one package are partially embedded in the molding compound of the package to bond with contacts or metal pads on another package. By embedding the conductive elements, the conductive elements may be made smaller and there are is gaps between the conductive elements and the molding compound. A pitch of the connectors can be determined by adding a space margin to a maximum width of the connectors. Various types of contacts on the other package can be bonded to the conductive elements.
Abstract:
A heat dissipating device includes a chamber body, a heat sink, a pipe, a first capillary structure and N vapor channels. The chamber body has an evaporation chamber and a compensation chamber, wherein the evaporation chamber has a vapor outlet and the compensation chamber has a liquid inlet. The heat sink is disposed on an outer wall of a first side of the chamber body and at least covers the compensation chamber. The pipe is installed within the heat sink, wherein a first end of the pipe is connected to the vapor outlet and a second end of the pipe is connected to the liquid inlet. The first capillary structure is formed in the evaporation chamber. The N vapor channels are formed in the first capillary structure. The N vapor channels and the compensation chamber are isolated by the first capillary structure.
Abstract:
A semiconductor die includes a crack stopper on an under-bump metallization (UBM) layer. The crack stopper is in the shape of hollow cylinder with at least two openings.
Abstract:
A stress compensation for use in packaging, and a method of forming, is provided. The stress compensation layer is placed on an opposing side of a substrate from an integrated circuit die. The stress compensation layer is designed to counteract at least some of the stress exerted structures on the die side of the substrate, such as stresses exerted by a molding compound that at least partially encapsulates the first integrated circuit die. A package may also be electrically coupled to the substrate.
Abstract:
The heat pipe of the invention includes an evaporation section and two condensation sections. The evaporation section is located at a part of the heat pipe. The two condensation sections are separately located at two opposite sides of the evaporation section. The evaporation section and the two condensation sections communicate with each other, and a peripheral size of the evaporation section is larger than that of each of the condensation sections.
Abstract:
The invention relates to the technical field of heat sinks, in particular to a fin heat sink with an improved structure and a processing method thereof. The fin heat sink with the improved structure comprises a pedestal and a plurality of cooling fins, wherein roots of the cooling fins are connected with the pedestal and provided with clamping grooves the bottoms of which are opened; clamping pieces corresponding to the clamping grooves are extended out of the pedestal; the cooling fins are clamped and connected with the clamping pieces through the clamping grooves; and the plurality of the cooling fins are subjected to layered arrangement to form a cooling fin group. The clamping grooves at the roots of the cooling fins are easy to mold through a die; the clamping pieces extended out of the pedestal are simple and convenient to process; the clamping grooves are connected with the clamping pieces by means of clamping, so the connection between the clamping grooves and the clamping pieces is reliable; and the clamping process can be completed through a stamping die. Therefore, compared with the prior art, the fin heat sink with the improved structure and the processing method thereof, which are provided by the invention, overcome the technical prejudice and can greatly reduce the processes, reduce the production cost and improve the production efficiency.