Abstract:
A graded seal assembly adapted for hermetically sealing a semiconductor package is disclosed. First and second members having first and second coefficients of thermal expansion respectively are provided. A leadframe is disposed between the first and second members. A first sealing glass is bonded to opposite surfaces of the leadframe and is disposed between the leadframe and the first member for sealing the leadframe to the first member. The second sealing glass is bonded to the second member. The second sealing glass has a third CTE which has a mismatch of less than about 5.times.10.sup.-7 in/in/.degree.C. with said second member. A graded interface zone having stratified layers fuses the first and second sealing glasses. Each of the layers in the zone has a coefficient of thermal expansion which is mismatched less than about 5.times.10.sup.-7 in/in/.degree.C. with an adjacent layer to absorb thermal stress formed by exposure of the semiconductor package to thermal cycling.
Abstract translation:公开了一种适于气密密封半导体封装的分级密封组件。 提供具有第一和第二热膨胀系数的第一和第二构件。 引线框设置在第一和第二构件之间。 第一密封玻璃结合到引线框架的相对表面,并且设置在引线框架和第一构件之间,用于将引线框架密封到第一构件。 第二密封玻璃结合到第二构件。 第二密封玻璃具有与所述第二构件不匹配的小于约5×10 -7 in / in /℃的第三CTE。 具有分层的分级界面区使第一和第二密封眼镜融合。 区域中的每个层具有小于约5×10 -7 in / in /℃的失配系数,具有相邻层以吸收由半导体封装暴露于热循环形成的热应力。
Abstract:
Fluid processing apparatuses and systems are disclosed. In some embodiments the fluid processing apparatuses include a movable enclosure, a plurality of filter housings disposed substantially within the movable enclosure, and a stand disposed within the enclosure. The filter housings are in fluid communication with one another. Each filter housing defines an elongate path and is configured to support a respective filter along the elongate flow path to filter a substantially continuous flow of fluid. The stand supports each filter housing such that the elongate flow path of each filter housing is substantially parallel to a vertical axis, wherein each filter housing is independently rotatable, relative to the stand.
Abstract:
The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.
Abstract:
A method for removing particles or deposits from a surface having particles or deposits thereon. The method involves contacting a surface with a chemical composition sufficient to selectively dissolve and remove at least a portion of the particles or deposits from the surface. The chemical composition is compatible with the surface. This disclosure also relates to a system of specially designed equipment for removing particles or deposits from a surface having particles or deposits thereon. The disclosure is useful, for example, in cleaning porous surfaces, media for cartridge, pleated and membrane surfaces, and internal walls of tanks or filter housings.
Abstract:
A composition for chemical mechanical polishing a surface of a substrate having a plurality of ultra high purity sol gel processed colloidal silica particles for chemical mechanical polishing having alkali metals Li, Na, K, Rb, Cs, Fr and a combination thereof, at a total alkali concentration of about 300 ppb or less, with the proviso that the concentration of Na, if present, is less than 200 ppb; and a medium for suspending the particles is provided. Also, provided are methods of chemical mechanical polishing which included a step of contacting a substrate and a composition according to the present invention. The contacting is carried out at a temperature and for a period of time sufficient to planarize the substrate.
Abstract:
There is provided a leadframe assembly for encapsulation in a polymer resin which prevents post-assembly fracture or swelling of the resin. The leadframe is coated with an adhesion enhancing layer that increases the shear stress required for delamination to in excess of about 3.4 MPa. In combination with this adhesion enhancing layer is a compliant die attach adhesive bonding an integrated circuit device to a central die attach paddle. This compliant die attach adhesive has a compliancy factor, E.multidot.a of less than 1.5 MPa/.degree.C. and a thickness of from about 0.01 mm to about 0.08 mm.
Abstract:
The bending of a ball grid array electronic package having a metallic base is reduced minimizing stresses applied to the innermost row of solder balls when the package base is cyclically heated and cooled. Reducing the stresses applied to the solder balls increases the number of thermal cycles before solder ball fracture causes device failure. Among the means disclosed to reduce the bending moment are a bimetallic composite base, an integral stiffener, a centrally disposed cover bonded to an external structure and a package base with a stress accommodating depressed portion.
Abstract:
There is provided an electronic package where the package components define a cavity. A semiconductor device and a portion of a leadframe occupy part of the cavity. Substantially the remainder of the cavity is filled with a compliant polymer, such as a silicone gel. Since the cavity is no longer susceptible to gross leak failure, the seal width of adhesives used to assemble the package may be reduced, thereby increasing the area available for mounting the semiconductor device.
Abstract:
There is provided a composite copper alloy having a copper alloy core and a modified surface layer containing a nitride or carbide film. Alternatively, the modified surface layer may contain a carbo-nitride film. The alloy is formed by reacting a copper alloy with nitrogen, carbon or a nitrogen/carbon mixture at elevated temperatures. The resultant surface layer improves the tribological and mechanical properties of the alloy while maintaining useful electrical conductivity.
Abstract:
There is provided a composite copper alloy having a copper alloy core and a modified surface layer containing a nitride or carbide film. Alternatively, the modified surface layer may contain a carbo-nitride film. The alloy is formed by reacting a copper alloy with nitrogen, carbon or a nitrogen/carbon mixture at elevated temperatures. The resultant surface layer improves the tribological and mechanical properties of the alloy while maintaining useful electrical conductivity.