公开(公告)号：US20140262038A1

公开(公告)日：2014-09-18

申请号：US14246915

申请日：2014-04-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/67

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US20140227881A1

公开(公告)日：2014-08-14

申请号：US13791074

申请日：2013-03-08

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Xinglong Chen ,  Shankar Venkataraman

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01J37/32357 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/54 ,  H01J37/32422 ,  H01J37/32449 ,  H01J37/32899 ,  H01L21/32136 ,  H01L21/67069

Abstract: An exemplary system may include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system may include a first remote plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access. The system may still further include a second remote plasma unit fluidly coupled with a second access of the chamber and configured to deliver a second precursor into the chamber through the second access. The first and second access may be fluidly coupled with a mixing region of the chamber that is separate from and fluidly coupled with the processing region of the chamber. The mixing region may be configured to allow the first and second precursors to interact with each other externally from the processing region of the chamber.

Abstract translation: 示例性系统可以包括被配置成在腔室的处理区域中容纳半导体衬底的腔室。 该系统可以包括第一远程等离子体单元，该第一远程等离子体单元与腔室的第一通路流体耦合并且被配置为通过第一通路将第一前体输送到腔室中。 系统还可以包括第二远程等离子体单元，该第二远程等离子体单元与腔室的第二通路流体耦合并且被配置为通过第二通路将第二前体输送到腔室中。 第一和第二通路可以与腔室的混合区域流体耦合，腔室的混合区域与腔室的处理区域分开并与腔室的处理区域流体耦合。 混合区域可以被配置为允许第一和第二前体在室的处理区域外部彼此相互作用。

公开(公告)号：US20190385823A1

公开(公告)日：2019-12-19

申请号：US16511990

申请日：2019-07-15

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Xinglong Chen ,  Kien Chuc ,  Dmitry Lubomirsky ,  Soonam Park ,  Jang-Gyoo Yang ,  Shankar Venkataraman ,  Toan Tran ,  Kimberly Hinckley ,  Saurabh Garg

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/50 ,  B05B1/18 ,  C23C16/455 ,  C23C16/452 ,  B05B1/00

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

公开(公告)号：US10256079B2

公开(公告)日：2019-04-09

申请号：US13791074

申请日：2013-03-08

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Xinglong Chen ,  Shankar Venkataraman

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/3213 ,  C23C16/54 ,  C23C16/455 ,  C23C16/505 ,  H01L21/67

Abstract: An exemplary system may include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system may include a first remote plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access. The system may still further include a second remote plasma unit fluidly coupled with a second access of the chamber and configured to deliver a second precursor into the chamber through the second access. The first and second access may be fluidly coupled with a mixing region of the chamber that is separate from and fluidly coupled with the processing region of the chamber. The mixing region may be configured to allow the first and second precursors to interact with each other externally from the processing region of the chamber.

公开(公告)号：US10032606B2

公开(公告)日：2018-07-24

申请号：US15187211

申请日：2016-06-20

Applicant: Applied Materials, Inc.

Inventor： Jang-Gyoo Yang ,  Xinglong Chen ,  Soonam Park ,  Jonghoon Baek ,  Saurabh Garg ,  Shankar Venkataraman

IPC: C23C16/503 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/285 ,  H01L21/311

CPC classification number: H01J37/32091 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5093 ,  H01J37/32146 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/67075

Abstract: Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated through the positioning of a plurality of insulation members. The one or more power supplies may be electrically coupled with the process chamber with the use of switching mechanisms. The switches may be switchable to electrically couple the one or more power supplies to the components of the process chamber.

公开(公告)号：US09892888B2

公开(公告)日：2018-02-13

申请号：US15587129

申请日：2017-05-04

Applicant: Applied Materials, Inc.

Inventor： Jonghoon Baek ,  Soonam Park ,  Xinglong Chen ,  Dmitry Lubomirsky

IPC: C23C16/50 ,  H05H1/24 ,  H01J37/32

CPC classification number: H01J37/32082 ,  C23C16/4401 ,  C23C16/4404 ,  C23C16/503 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32568 ,  H01J37/32697 ,  H01J2237/334

Abstract: Methods for reducing particle generation in a processing chamber are disclosed. The methods generally include generating a plasma between a first electrode and a second electrode of the processing chamber by applying a radio frequency (RF) power to the first electrode during an etch process, wherein the first electrode is disposed above the second electrode, and the second electrode is disposed above and opposing a substrate support having a substrate supporting surface, and applying a constant zero DC bias voltage to the first electrode during the process.

公开(公告)号：US09593421B2

公开(公告)日：2017-03-14

申请号：US14514930

申请日：2014-10-15

Applicant: Applied Materials, Inc.

Inventor： Jonghoon Baek ,  Soonam Park ,  Xinglong Chen ,  Dmitry Lubomirsky

IPC: C23C16/50 ,  H05H1/24 ,  C23C16/52 ,  C23C16/503 ,  C23C16/509 ,  C23C16/44 ,  H01J37/32

CPC classification number: H01J37/32082 ,  C23C16/4401 ,  C23C16/4404 ,  C23C16/503 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32568 ,  H01J37/32697 ,  H01J2237/334

Abstract: Methods for reducing particle generation in a processing chamber are disclosed. The methods generally include generating a plasma between a powered top electrode and a grounded bottom electrode, wherein the top electrode is parallel to the bottom electrode, and applying a constant zero DC bias voltage to the powered top electrode during a film deposition process to minimize the electrical potential difference between the powered top electrode and the plasma and/or the electrical potential difference between the grounded bottom electrode and the plasma.

Abstract translation: 公开了减少处理室中的颗粒产生的方法。 所述方法通常包括在动力顶部电极和接地底部电极之间产生等离子体，其中顶部电极平行于底部电极，并且在成膜过程中将恒定零直流偏置电压施加到动力顶部电极，以使 电源顶部电极和等离子体之间的电位差和/或接地的底部电极和等离子体之间的电位差。

公开(公告)号：US20160300694A1

公开(公告)日：2016-10-13

申请号：US15187211

申请日：2016-06-20

Applicant: Applied Materials, Inc.

Inventor： Jang-Gyoo Yang ,  Xinglong Chen ,  Soonam Park ,  Jonghoon Baek ,  Saurabh Garg ,  Shankar Venkataraman

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/509 ,  H01L21/67

CPC classification number: H01J37/32091 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5093 ,  H01J37/32146 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/67075

Abstract: Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated through the positioning of a plurality of insulation members. The one or more power supplies may be electrically coupled with the process chamber with the use of switching mechanisms. The switches may be switchable to electrically couple the one or more power supplies to the components of the process chamber.

Abstract translation: 描述了包括处理室的半导体处理系统。 处理室可以包括盖组件，栅格电极，导电插入件和接地电极。 每个部件可以与可操作以在处理室内产生等离子体的一个或多个电源耦合。 每个部件可以通过定位多个绝缘部件而被电隔离。 一个或多个电源可以利用开关机构与处理室电耦合。 开关可以切换以将一个或多个电源电耦合到处理室的组件。

公开(公告)号：US20160284556A1

公开(公告)日：2016-09-29

申请号：US15173824

申请日：2016-06-06

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Dmitry Lubomirsky ,  Xinglong Chen ,  Shankar Venkataraman

IPC: H01L21/3065 ,  H01J37/32

Abstract: Methods of etching a patterned substrate may include flowing an oxygen-containing precursor into a first remote plasma region fluidly coupled with a substrate processing region. The oxygen-containing precursor may be flowed into the region while forming a plasma in the first remote plasma region to produce oxygen-containing plasma effluents. The methods may also include flowing a fluorine-containing precursor into a second remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the second remote plasma region to produce fluorine-containing plasma effluents. The methods may include flowing the oxygen-containing plasma effluents and fluorine-containing plasma effluents into the processing region, and using the effluents to etch a patterned substrate housed in the substrate processing region.

Abstract translation: 蚀刻图案化衬底的方法可以包括使含氧前体流入与衬底处理区流体耦合的第一远程等离子体区域。 可以在第一远程等离子体区域中形成等离子体的同时将含氧前体流入该区域以产生含氧等离子体流出物。 所述方法还可以包括使含氟前体流入与基板处理区流体耦合的第二远程等离子体区域，同时在第二远程等离子体区域中形成等离子体以产生含氟等离子体流出物。 所述方法可以包括将含氧等离子体流出物和含氟等离子体流出物流入处理区域，并且使用流出物蚀刻容纳在基板处理区域中的图案化基板。

公开(公告)号：US09449850B2

公开(公告)日：2016-09-20

申请号：US14703299

申请日：2015-05-04

Applicant: Applied Materials, Inc.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/324 ,  H01L21/3065 ,  H01L21/306 ,  H01L21/311

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.