公开(公告)号：US10007622B2

公开(公告)日：2018-06-26

申请号：US15481288

申请日：2017-04-06

Applicant: Invensas Corporation

Inventor： Zhuowen Sun ,  Yong Chen

IPC: G06F13/16 ,  G11C8/12 ,  G06F12/06 ,  G11C5/06 ,  G11C8/06 ,  G11C5/04

CPC classification number: G06F13/1673 ,  G06F12/00 ,  G06F12/0623 ,  G06F13/1694 ,  G11C5/04 ,  G11C5/06 ,  G11C8/06 ,  G11C8/12 ,  H01L2224/4824 ,  H01L2924/15311

Abstract: A method for reducing load in a memory module. In such a method, a plurality of memory chips are coupled to a circuit platform. Each memory chip of the plurality of memory chips each has a plurality of memory dies. At least one controller is coupled to the circuit platform and further coupled to the plurality of memory chips for communication with the plurality of memory dies thereof. The at least one controller is for receiving chip select signals to provide a plurality of rank select signals in excess of the chip select signals. The plurality of memory dies are coupled with wire bonds within the plurality of memory chips for a reduced load for coupling the circuit platform for communicating via a memory channel. The load is sufficiently reduced for having at least two instances of the memory module share the memory channel.

公开(公告)号：US09985007B2

公开(公告)日：2018-05-29

申请号：US15393083

申请日：2016-12-28

Applicant: Invensas Corporation

Inventor： Min Tao ,  Hoki Kim ,  Ashok S. Prabhu ,  Zhuowen Sun ,  Wael Zohni ,  Belgacem Haba

IPC: H01L23/10 ,  H01L25/00 ,  H01L25/065 ,  H01L25/10

CPC classification number: H01L25/0657 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/52 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/5283 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/02 ,  H01L24/09 ,  H01L24/46 ,  H01L24/49 ,  H01L24/83 ,  H01L25/0652 ,  H01L25/071 ,  H01L25/105 ,  H01L25/112 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/02331 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2225/06555 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/15151 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/18161 ,  H01L2924/19107

Abstract: Package-on-package (“PoP”) devices with multiple levels and methods therefor are disclosed. In a PoP device, a first integrated circuit die is surface mount coupled to an upper surface of a package substrate. First and second conductive lines are coupled to the upper surface of the package substrate respectively at different heights in a fan-out region. A first molding layer is formed over the upper surface of the package substrate. A first and a second wafer-level packaged microelectronic component are located above an upper surface of the first molding layer respectively surface mount coupled to a first and a second set of upper portions of the first conductive lines. A third and a fourth wafer-level packaged microelectronic component are located above the first and the second wafer-level packaged microelectronic component respectively surface mount coupled to a first and a second set of upper portions of the second conductive lines.

公开(公告)号：US09972609B2

公开(公告)日：2018-05-15

申请号：US15393112

申请日：2016-12-28

Applicant: Invensas Corporation

Inventor： Min Tao ,  Hoki Kim ,  Ashok S. Prabhu ,  Zhuowen Sun ,  Wael Zohni ,  Belgacem Haba

IPC: H01L25/10 ,  H01L25/00 ,  H01L21/48 ,  H01L21/56 ,  H01L23/538 ,  H01L23/31

CPC classification number: H01L25/0657 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/52 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/5283 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/02 ,  H01L24/09 ,  H01L24/46 ,  H01L24/49 ,  H01L24/83 ,  H01L25/0652 ,  H01L25/071 ,  H01L25/105 ,  H01L25/112 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/02331 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2225/06555 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/15151 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/18161 ,  H01L2924/19107

Abstract: Package-on-package (“PoP”) devices with WLP (“WLP”) components with dual RDLs (“RDLs”) for surface mount dies and methods therefor. In a PoP, a first IC die surface mount coupled to an upper surface of a package substrate. Conductive lines are coupled to the upper surface of the package substrate in a fan-out region. A molding layer is formed over the upper surface of the package substrate. A first and a second WLP microelectronic component are located at a same level above an upper surface of the molding layer respectively surface mount coupled to sets of upper portions of the conductive lines. Each of the first and the second WLP microelectronic components have a second IC die located between a first RDL and a second RDL. A third and a fourth IC die are respectively surface mount coupled over the first and the second WLP microelectronic components.

公开(公告)号：US09972573B2

公开(公告)日：2018-05-15

申请号：US15393048

申请日：2016-12-28

Applicant: Invensas Corporation

Inventor： Min Tao ,  Hoki Kim ,  Ashok S. Prabhu ,  Zhuowen Sun ,  Wael Zohni ,  Belgacem Haba

IPC: H01L23/538 ,  H01L23/31 ,  H01L25/10 ,  H01L21/48 ,  H01L21/56 ,  H01L25/00

CPC classification number: H01L25/0657 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/52 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/5283 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/02 ,  H01L24/09 ,  H01L24/46 ,  H01L24/49 ,  H01L24/83 ,  H01L25/0652 ,  H01L25/071 ,  H01L25/105 ,  H01L25/112 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/02331 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2225/06555 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/15151 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/18161 ,  H01L2924/19107

Abstract: Wafer-level packaged components are disclosed. In a wafer-level-packaged, an integrated circuit die has first contacts in an inner third region of a surface of the integrated circuit die. A redistribution layer has second contacts in an inner third region of a first surface of the redistribution layer and third contacts in an outer third region of a second surface of the redistribution layer opposite the first surface thereof. The second contacts of the redistribution layer are coupled for electrical conductivity to the first contacts of the integrated circuit die with the surface of the integrated circuit die face-to-face with the first surface of the redistribution layer. The third contacts are offset from the second contacts for being positioned in a fan-out region for association at least with the outer third region of the second surface of the redistribution layer, the third contacts being surface mount contacts.

公开(公告)号：US20180061774A1

公开(公告)日：2018-03-01

申请号：US15804122

申请日：2017-11-06

Applicant: Invensas Corporation

Inventor： Abiola Awujoola ,  Zhuowen Sun ,  Wael Zohni ,  Ashok S. Prabhu ,  Willmar Subido

IPC: H01L23/552 ,  H01L23/00 ,  H01L25/065 ,  H01L25/10 ,  H01L23/498

CPC classification number: H01L23/552 ,  H01L23/49811 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/03 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/04042 ,  H01L2224/1134 ,  H01L2224/12105 ,  H01L2224/13076 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16265 ,  H01L2224/17051 ,  H01L2224/17181 ,  H01L2224/215 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/48105 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/4942 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73227 ,  H01L2224/73253 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/1023 ,  H01L2225/1052 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/1205 ,  H01L2924/1206 ,  H01L2924/1207 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3025 ,  H01L2224/45099 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05599

Abstract: Apparatuses relating generally to a microelectronic package having protection from interference are disclosed. In an apparatus thereof, a substrate has an upper surface and a lower surface opposite the upper surface and has a ground plane. A first microelectronic device is coupled to the upper surface of the substrate. Wire bond wires are coupled to the ground plane for conducting the interference thereto and extending away from the upper surface of the substrate. A first portion of the wire bond wires is positioned to provide a shielding region for the first microelectronic device with respect to the interference. A second portion of the wire bond wires is not positioned to provide the shielding region. A second microelectronic device is coupled to the substrate and located outside of the shielding region. A conductive surface is over the first portion of the wire bond wires for covering the shielding region.

公开(公告)号：US20180040587A1

公开(公告)日：2018-02-08

申请号：US15669269

申请日：2017-08-04

Applicant: Invensas Corporation

Inventor： Min Tao ,  Zhuowen Sun ,  Belgacem Haba ,  Hoki Kim ,  Wael Zohni ,  Shaowu Huang

IPC: H01L25/065 ,  H01L23/367 ,  H01L25/18 ,  H01L23/31 ,  H01L25/00 ,  H01L23/00

Abstract: Vertical memory modules enabled by fan-out redistribution layer(s) (RDLs) are provided. Memory dies may be stacked with each die having a signal pad directed to a sidewall of the die. A redistribution layer (RDL) is built on sidewalls of the stacked dies and coupled with the signal pads. The RDL may fan-out to UBM and solder balls, for example. An alternative process reconstitutes dies on a carrier with a first RDL on a front side of the dies. The dies and first RDL are encapsulated, and the modules vertically disposed for a second reconstitution on a second carrier. A second RDL is applied to exposed contacts of the vertically disposed modules and first RDLs. The vertical modules and second RDL are encapsulated in turn with a second mold material. The assembly may be singulated into individual memory modules, each with a fan-out RDL on the sidewalls of the vertically disposed dies.

公开(公告)号：US20180026011A1

公开(公告)日：2018-01-25

申请号：US15393100

申请日：2016-12-28

Applicant: Invensas Corporation

Inventor： Min Tao ,  Hoki Kim ,  Ashok S. Prabhu ,  Zhuowen Sun ,  Wael Zohni ,  Belgacem Haba

IPC: H01L25/065 ,  H01L25/00 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01L21/52

CPC classification number: H01L25/0657 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/52 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/5283 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/02 ,  H01L24/09 ,  H01L24/46 ,  H01L24/49 ,  H01L24/83 ,  H01L25/0652 ,  H01L25/071 ,  H01L25/105 ,  H01L25/112 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/02331 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2225/06555 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/15151 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/18161 ,  H01L2924/19107

Abstract: Package-on-package (“PoP”) devices with same level wafer-level packaged (“WLP”) components and methods therefor are disclosed. In a PoP device, a first integrated circuit die is surface mount coupled to an upper surface of a package substrate. Conductive lines are coupled to the upper surface of the package substrate in a fan-out region. The first conductive lines extend away from the upper surface of the package substrate. A molding layer is formed over the upper surface of the package substrate, around sidewall surfaces of the first integrated circuit die, and around bases and shafts of the conductive lines. WLP microelectronic components are located at a same level above an upper surface of the molding layer respectively surface mount coupled to sets of upper portions of the conductive lines.

公开(公告)号：US09728524B1

公开(公告)日：2017-08-08

申请号：US15198615

申请日：2016-06-30

Applicant: Invensas Corporation

Inventor： Min Tao ,  Zhuowen Sun ,  Hoki Kim ,  Wael Zohni ,  Akash Agrawal

IPC: H01L23/49 ,  H01L23/31 ,  H01L21/56 ,  H01L25/10 ,  H01L25/065 ,  H01L23/498 ,  H01L25/00 ,  H05K1/18 ,  H05K1/11

CPC classification number: H01L25/105 ,  H01L23/49805 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/06582 ,  H01L2225/06589 ,  H05K1/11 ,  H05K1/181 ,  H05K2201/10378 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A microelectronic assembly includes a plurality of stacked microelectronic packages, each comprising a dielectric element having a major surface, an interconnect region adjacent an interconnect edge surface which extends away from the major surface, and plurality of package contacts at the interconnect region. A microelectronic element has a front surface with chip contacts thereon coupled to the package contacts, the front surface overlying and parallel to the major surface. The microelectronic packages are stacked with planes defined by the dielectric elements substantially parallel to one another, and the package contacts electrically coupled with panel contacts at a mounting surface of a circuit panel via an electrically conductive material, the planes defined by the dielectric elements being oriented at a substantial angle to the mounting surface.

公开(公告)号：US09691437B2

公开(公告)日：2017-06-27

申请号：US14496159

申请日：2014-09-25

Applicant: Invensas Corporation

Inventor： Zhuowen Sun ,  Yong Chen

IPC: G11C5/06 ,  G11C5/02 ,  H01L23/00

CPC classification number: G11C5/063 ,  G11C5/025 ,  H01L24/00

Abstract: A microelectronic package has terminals at a surface of a substrate having first and second half areas, each half area extending from a diagonal that bisects the first surface and a respective opposite corner of the first surface. Terminals for carrying data and address information in the first half area provide first memory channel access to a first memory storage array, and terminals for carrying data and address information in the second half area provide second memory channel access to a second memory storage array. The package may include first and second microelectronic elements overlying a same surface of the substrate which may be stacked in transverse orientations.

公开(公告)号：US20170171003A1

公开(公告)日：2017-06-15

申请号：US15441783

申请日：2017-02-24

Applicant: Invensas Corporation

Inventor： Zhuowen Sun ,  Cyprian Emeka Uzoh ,  Yong Chen

IPC: H04L27/01 ,  H01L25/065 ,  H01L23/48

CPC classification number: H01L23/49827 ,  H01L21/486 ,  H01L23/3675 ,  H01L23/481 ,  H01L23/53238 ,  H01L23/53295 ,  H01L23/5384 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/11 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/00

Abstract: An apparatus relating generally to a substrate is disclosed. In such an apparatus, the substrate has a first surface and a second surface opposite the first surface. The first surface and the second surface define a thickness of the substrate. A via structure extends from the first surface of the substrate to the second surface of the substrate. The via structure has a first terminal at or proximate to the first surface and a second terminal at or proximate to the second surface provided by a conductive member of the via structure extending from the first terminal to the second terminal. A barrier layer of the via structure is disposed between at least a portion of the conductive member and the substrate. The barrier layer has a conductivity configured to offset a capacitance between the conductive member and the substrate when a signal is passed through the conductive member of the via structure.