公开(公告)号：US20050199489A1

公开(公告)日：2005-09-15

申请号：US11090919

申请日：2005-03-25

申请人： Joseph Stevens ,  Dmitry Lubomirsky ,  Ian Pancham ,  Donald Olgado ,  Howard Grunes ,  Yeuk-Fai Mok

发明人： Joseph Stevens ,  Dmitry Lubomirsky ,  Ian Pancham ,  Donald Olgado ,  Howard Grunes ,  Yeuk-Fai Mok

IPC分类号： C23C18/18 ,  C23C18/16 ,  C25D7/12 ,  H01L21/00 ,  H01L21/28 ,  H01L21/288 ,  C25C7/00

CPC分类号： H01L21/67126 ,  C23C18/1607 ,  C23C18/1619 ,  C23C18/1628 ,  C23C18/165 ,  C23C18/1653 ,  C23C18/1678 ,  C25D7/123 ,  C25D17/001

摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.

摘要翻译： 一种沉积包含至少一种选自贵金属，半贵金属，其合金及其组合的金属的催化剂层的装置和方法，其形成在基板上形成的亚微米特征。 贵金属的实例包括钯和铂。 半贵金属的实例包括钴，镍和钨。 可通过无电沉积，电镀或化学气相沉积来沉积催化层。 在一个实施方案中，催化层可以沉积在特征中以用作随后沉积的导电材料的阻挡层。 在另一个实施方案中，催化剂层可以沉积在阻挡层上。 在另一个实施方案中，催化层可以沉积在沉积在阻挡层上的种子层上，以充当种子层中任何不连续性的“贴片”。 一旦沉积了催化层，可以在催化剂层上沉积诸如铜的导电材料。 在一个实施例中，导电材料通过无电沉积沉积在催化剂层上。 在另一个实施方案中，导电材料通过无电沉积然后电镀或随后进行化学气相沉积沉积在催化剂层上。 在另一个实施例中，导电材料通过电镀或化学气相沉积沉积在催化层上。

公开(公告)号：US20050181226A1

公开(公告)日：2005-08-18

申请号：US11040962

申请日：2005-01-22

申请人： Timothy Weidman ,  Ian Pancham ,  Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Yosef Shacham-Diamand ,  Farhad Moghadam

发明人： Timothy Weidman ,  Ian Pancham ,  Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Yosef Shacham-Diamand ,  Farhad Moghadam

IPC分类号： C23C18/16 ,  C23C18/50 ,  H01L21/02 ,  H01L21/288 ,  H01L21/768 ,  B05C3/00 ,  B05D1/18

CPC分类号： C23C18/1683 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/50 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76874 ,  Y10T428/12

摘要： A method and apparatus for electrolessly depositing a multilayer film using a fluid processing solution(s) that can clean and then electrolessly deposit a metal films having discrete or varying composition onto a conductive surface using a single processing cell. The process advantageously includes in-situ cleaning step in order to minimize the formation of oxides on the conductive surfaces, by minimizing or preventing the exposure of the conductive surfaces to oxygen (e.g., air) between the cleaning step and an electroless deposition process step(s). In one aspect, the chemical components used in the fluid processing solution(s) are selected so that the interaction of various chemical components will not drastically change the desirable properties of each of the interacting fluids, generate particles in the fluid lines or on the surface of the substrate, and/or generate a significant amount of heat which can damage the hardware or significantly change the electroless process results. In another aspect, no rinsing steps are required between the various deposition steps used to form the various layers, since the processing fluids are selected so that they are compatible with each other. In another aspect, throughout the process the conductive surfaces are continually in contact with various chemical components that will inhibit oxidation of the conductive surfaces and/or reduce the oxidized metal surfaces. In one aspect, a multilayer structure can formed on the surface of the conductive surface using the continuous electroless deposition process where the first layer of the multilayer structure has at least two of the following elements cobalt (Co), tungsten (W), phosphorus (P) or boron (B); and a second layer contains at least two of the following elements cobalt (Co), boron (B) or phosphorus (P). Formation of a multilayer structure on the conductive surface may have advantage since each deposited layer can have differing properties which when placed together will form a layer that has improved properties over a single deposited layer.

公开(公告)号：US20050081785A1

公开(公告)日：2005-04-21

申请号：US10965220

申请日：2004-10-14

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian Pancham ,  Sergey Lopatin

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian Pancham ,  Sergey Lopatin

IPC分类号： B05C3/00 ,  B05C19/02 ,  C23C18/16 ,  C23C18/28 ,  C23F1/00 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768

CPC分类号： H01L21/76838 ,  C23C18/1601 ,  C23C18/1619 ,  C23C18/1628 ,  C23C18/1678 ,  C23C18/1682 ,  C23C18/1872 ,  C23C18/28 ,  H01L21/288 ,  Y10S134/902

摘要： Embodiments of the invention generally provide a fluid processing platform. The platform includes a mainframe having a substrate transfer robot, at least one substrate cleaning cell on the mainframe, and at least one processing enclosure. The processing enclosure includes a gas supply positioned in fluid communication with an interior of the processing enclosure, a first fluid processing cell positioned in the enclosure, a first substrate head assembly positioned to support a substrate for processing in the first fluid processing cell, a second fluid processing cell positioned in the enclosure, a second head assembly positioned to support a substrate for processing in the second fluid processing cell, and a substrate shuttle positioned between the first and second fluid processing cells and being configured to transfer substrates between the fluid processing cells and the mainframe robot.

摘要翻译： 本发明的实施例通常提供流体处理平台。 平台包括具有基板传送机器人的主机，主机上的至少一个基板清洁单元，以及至少一个处理机壳。 处理外壳包括定位成与处理外壳的内部流体连通的气体供应源，位于外壳中的第一流体处理单元，定位成支撑基板以在第一流体处理单元中进行处理的第一基板头组件，第二流体处理单元 位于外壳中的流体处理单元，定位成支撑用于在第二流体处理单元中进行处理的基板的第二头部组件，以及位于第一和第二流体处理单元之间的衬底梭，并且构造成将衬底在流体处理单元 和主机机器人。

公开(公告)号：US06742279B2

公开(公告)日：2004-06-01

申请号：US10052015

申请日：2002-01-16

申请人： Dmitry Lubomirsky ,  Joseph J. Stevens

发明人： Dmitry Lubomirsky ,  Joseph J. Stevens

IPC分类号： F26B508

CPC分类号： H01L21/67028 ,  Y10S134/902

摘要： Embodiments of the invention provide a spin rinse dry (SRD) chamber for a semiconductor processing system. The SRD chamber includes a selectively rotatable substrate support member having an upper substrate receiving surface formed thereon, and a selectively rotatable shield member positioned above the upper substrate receiving surface, the rotatable shield member having a substantially planar lower surface that may be selectively positioned proximate the upper substrate. Embodiments of the invention further provide a method for rinsing semiconductor substrates, including the steps of positioning the substrate on a substrate support member, positioning a shield member having a substantially planar lower surface in a processing position above the substrate such that the substantially planar lower surface is in parallel orientation with an upper surface of the substrate, and flowing a fluid solution into a processing region defined by the upper surface of the substrate and the substantially planar lower surface via a fluid aperture in the substantially planar lower surface.

摘要翻译： 本发明的实施例提供了一种用于半导体处理系统的旋转冲洗干燥（SRD）室。 SRD室包括一个有选择地旋转的基板支撑件，其具有形成在其上的上基板接收表面，以及位于上基板接收表面上方的可选择地旋转的屏蔽件，该可旋转屏蔽件具有基本平坦的下表面， 上基板。 本发明的实施例还提供了一种用于冲洗半导体衬底的方法，包括以下步骤：将衬底定位在衬底支撑构件上，将具有基本平坦的下表面的屏蔽构件定位在衬底上方的处理位置，使得基本平坦的下表面 与基底的上表面平行取向，并且使流体溶液经由基本平坦的下表面中的流体孔流动到由基底的上表面和基本上平坦的下表面限定的处理区域中。

公开(公告)号：US06537011B1

公开(公告)日：2003-03-25

申请号：US09629322

申请日：2000-07-31

申请人： Danny Wang ,  Dmitry Lubomirsky ,  Erwin Polar ,  Brigitte Stoehr ,  Mark Wiltse ,  Yeuk-Fai Edwin Mok ,  Frank C. Ma

发明人： Danny Wang ,  Dmitry Lubomirsky ,  Erwin Polar ,  Brigitte Stoehr ,  Mark Wiltse ,  Yeuk-Fai Edwin Mok ,  Frank C. Ma

IPC分类号： B65G4907

CPC分类号： H01L21/68707 ,  H01L21/68721 ,  H01L21/68785 ,  Y10S414/141

摘要： A method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system. In one aspect, a support ring having one or more substrate support members mounted thereon and defining a central opening therein for receipt of a substrate support member during processing is disclosed. In another aspect, a substrate handler blade having a plurality of substrate supports disposed thereon is provided which is adapted to support a substrate thereon and effectuate substrate transfer between the substrate handler blade and the support ring.

摘要翻译： 一种用于在半导体晶片处理系统中支撑和传送衬底的方法和装置。 在一个方面，公开了一种支撑环，其具有安装在其上的一个或多个基板支撑构件并且在处理期间限定用于接收基板支撑构件的中心开口。 在另一方面，提供一种其上设置有多个基板支撑件的基板处理器刀片，其适于在其上支撑基板并且实现基板处理器刀片和支撑环之间的基板传送。

公开(公告)号：US08771538B2

公开(公告)日：2014-07-08

申请号：US12949661

申请日：2010-11-18

申请人： Dmitry Lubomirsky ,  Jang-Gyoo Yang ,  Matthew Miller ,  Jay Pinson ,  Kien Chuc

发明人： Dmitry Lubomirsky ,  Jang-Gyoo Yang ,  Matthew Miller ,  Jay Pinson ,  Kien Chuc

IPC分类号： B44C1/22 ,  H01J37/32

CPC分类号： H01J37/32357 ,  H01J37/3211

摘要： Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.

摘要翻译： 本发明的实施例通常提供一种等离子体源装置及其使用方法，其能够通过使用电磁能量在等离子体产生区域内产生自由基和/或气体离子，所述等离子体产生区域围绕磁芯元件对称地定位 资源。 通常，等离子体产生区域和磁芯的取向和形状允许将输送的电磁能量有效均匀地耦合到设置在等离子体产生区域中的气体。 通常，等离子体产生区域中形成的等离子体的改进的特性能够改善在设置在等离子体产生区域下游的衬底或处理室的一部分上进行的沉积，蚀刻和/或清洁过程。

公开(公告)号：US20130082197A1

公开(公告)日：2013-04-04

申请号：US13251714

申请日：2011-10-03

申请人： Jang-Gyoo Yang ,  Matthew L. Miller ,  Xinglong Chen ,  Kien N. Chuc ,  Qiwei Liang ,  Shankar Venkataraman ,  Dmitry Lubomirsky

发明人： Jang-Gyoo Yang ,  Matthew L. Miller ,  Xinglong Chen ,  Kien N. Chuc ,  Qiwei Liang ,  Shankar Venkataraman ,  Dmitry Lubomirsky

IPC分类号： G21K1/00

CPC分类号： H01J37/32091 ,  H01J37/32422

摘要： Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

公开(公告)号：US20130023122A1

公开(公告)日：2013-01-24

申请号：US13187304

申请日：2011-07-20

申请人： Srinivas D. Nemani ,  Yifeng Zhou ,  Dmitry Lubomirsky ,  Ellie Yieh

发明人： Srinivas D. Nemani ,  Yifeng Zhou ,  Dmitry Lubomirsky ,  Ellie Yieh

IPC分类号： H01L21/311

CPC分类号： H01L21/31116 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76826

摘要： Methods of multiple patterning of low-k dielectric films are described. For example, a method includes forming and patterning a first mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. A second mask layer is formed and patterned above the first mask layer. A pattern of the second mask layer is transferred at least partially into the low-k dielectric layer by modifying first exposed portions of the low-k dielectric layer with a first plasma process and removing the modified portions of the low-k dielectric layer. Subsequently, a pattern of the first mask layer is transferred at least partially into the low-k dielectric layer by modifying second exposed portions of the low-k dielectric layer with a second plasma process and removing the modified portions of the low-k dielectric layer.

摘要翻译： 描述了低k电介质膜的多次图案化方法。 例如，一种方法包括在低k电介质层上形成和图案化第一掩模层，低k电介质层设置在衬底之上。 第二掩模层在第一掩模层之上形成并图案化。 通过用第一等离子体处理修改低k电介质层的第一暴露部分并去除低k电介质层的修改部分，将第二掩模层的图案至少部分地转移到低k电介质层中。 随后，通过用第二等离子体处理修改低k电介质层的第二暴露部分，将第一掩模层的图案至少部分地转移到低k电介质层中，并且去除低k电介质层的修饰部分 。

公开(公告)号：US08333842B2

公开(公告)日：2012-12-18

申请号：US12121599

申请日：2008-05-15

申请人： Dmitry Lubomirsky ,  Tien Fak Tan ,  Lun Tsuei

发明人： Dmitry Lubomirsky ,  Tien Fak Tan ,  Lun Tsuei

IPC分类号： H01L21/3065

CPC分类号： H01L21/67126 ,  H01L21/6838 ,  Y10T279/23

摘要： A wafer pedestal of a semiconductor apparatus is provided. The wafer pedestal is capable of supporting a substrate. The wafer pedestal includes a pedestal having at least one purge opening configured to flow a purge gas and at least one chucking opening configured to chuck the substrate over the pedestal. The pedestal includes a sealing band disposed between the at least one purge opening and the at least one chucking opening. The sealing band is configured to support the substrate.

摘要翻译： 提供半导体装置的晶片基座。 晶片基座能够支撑基板。 晶片基座包括具有至少一个净化开口的基座，该至少一个净化开口构造成流过净化气体;以及至少一个夹紧开口，其构造成将衬底夹在基座上。 基座包括设置在至少一个吹扫开口和至少一个夹紧开口之间的密封带。 密封带构造成支撑基底。

公开(公告)号：US20120193456A1

公开(公告)日：2012-08-02

申请号：US13363342

申请日：2012-01-31

申请人： Dmitry Lubomirsky ,  Kartik Ramaswamy ,  Kallol Bera ,  Jennifer Sun

发明人： Dmitry Lubomirsky ,  Kartik Ramaswamy ,  Kallol Bera ,  Jennifer Sun

IPC分类号： B05B1/14

CPC分类号： C23C16/5096 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32559

摘要： Embodiments of the present invention provide a gas distribution plate assembly having protective elements for plasma processing. The gas distribution plate assembly includes a base plate having a front side and a backside, and a plurality of protective elements in direct contact with the base plate. The protective elements cover the front side of the base plate to protect the base plate from a plasma processing environment during use.

摘要翻译： 本发明的实施例提供一种具有用于等离子体处理的保护元件的气体分配板组件。 气体分配板组件包括具有前侧和后侧的基板，以及与基板直接接触的多个保护元件。 保护元件覆盖基板的前侧，以在使用过程中保护基板免受等离子体处理环境的影响。