摘要:
Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support. One embodiment of the method comprises performing in a single chamber one or more of the processes including, but not limited to, cyclical layer deposition, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition; plasma-enhanced chemical vapor deposition; and/or chemical vapor deposition.
摘要:
An image signal modulation method is applicable to an optical scanner to obtain compensated image when the light source is not stable during starting. It first scans a document to get corresponding optoelectronic signals of pixels at different positions. Then, it transfers the optoelectronic signals to a memory unit for adjusting a shading table and parameters of an ASIC to compensate the brightness of each pixel, resemble a condition of stable luminosity, and generate an updated shading table. Finally, it compensates the optoelectronic signals of each corresponding pixel according to the updated shading table, and obtains the scanned image data. The compensation solves the problem of luminosity changing and variation during starting of scanning so that an instant use of scanner is available.
摘要:
A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a soak. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane, disilane, dichlorosilane and derivatives thereof. A tungsten bulk layer may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.
摘要:
A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process. A metal-containing layer is subsequently deposited on the tantalum nitride layer.
摘要:
This invention relates to novel lactams of Formula (I): having drug and bio-affecting properties, their pharmaceutical compositions and methods of use. These novel compounds inhibit the processing of amyloid precursor protein and, more specifically, inhibit the production of Aβ-peptide, thereby acting to prevent the formation of neurological deposits of amyloid protein. More particularly, the present invention relates to the treatment of neurological disorders related to β-amyloid production such as Alzheimer's disease and Down's Syndrome.
摘要:
A method for electrolytically repairing a copper seed layer. The method includes positioning the seed layer in fluid communication with a low conductivity seed layer repair solution, wherein the low conductivity seed layer repair solution includes a copper concentration of less than about 20 g/l, a pH of less than about 4, a chlorine ion concentration of between about 20 ppm and about 100 ppm, and an additive organic surfactant configured to suppress a copper deposition rate in the concentration range of 200 ppm to 2000 ppm. The method further includes applying a seed layer repair bias configured to generate a current density of less than about 5 mA/cm2 across the seed layer and cleaning the repaired seed layer in pure water containing less than 1 ppm chloride ions.
摘要翻译:一种用于电解修复铜籽晶层的方法。 该方法包括将种子层定位成与低电导种子层修复溶液流体连通,其中低电导种子层修复溶液包括小于约20g / l的铜浓度,小于约4的pH,氯 约20ppm至约100ppm的离子浓度,以及配置为在200ppm至2000ppm的浓度范围内抑制铜沉积速率的添加剂有机表面活性剂。 该方法还包括施加晶种层修复偏压,其被配置成跨越种子层产生小于约5mA / cm 2的电流密度,并且在含有小于1ppm的纯水中清洁修复的种子层 氯离子。
摘要:
The present application describes modulators of MCP-1 of formula (I): or pharmaceutically acceptable salt forms thereof, useful for the prevention of asthma, multiple sclerosis, artherosclerosis, and rheumatoid arthritis.
摘要:
Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy). In one aspect, the composition of the ternary material layer may be tuned by changing the flow ratio of the second precursor to the third precursor between cycles.
摘要:
Embodiments of the invention teach a method for depositing a copper seed layer to a substrate surface, generally to a barrier layer. The method includes placing the substrate surface into a copper solution, wherein the copper solution includes complexed copper ions. A current or bias is applied across the substrate surface and the complexed copper ions are reduced to deposit the copper seed layer onto the barrier layer.
摘要:
A method of manufacturing optical ribbons, wherein the optical fibers are paid out by an optical fiber pay-out unit, and grouped together in a nozzle where they are coated in a coating material which is caused to set in order to form an optical fiber ribbon. A plurality of groups of optical fibers are formed in parallel in as many nozzles as possible, and the groups of optical fibers, which are coated in a coating material, are caused to set simultaneously using a single setting means for setting the coating material, in order to form as many ribbons of optical fibers as possible, thereby enabling the manufacturing cost of a ribbon to be reduced.