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公开(公告)号:US12046494B2
公开(公告)日:2024-07-23
申请号:US17988286
申请日:2022-11-16
Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.
Inventor: Wu-Hung Yen , Yi-Hsien Huang , Chun-Tang Lin , Shu-Hua Chen , Shou-Qi Chang
IPC: H01L21/67
CPC classification number: H01L21/67271 , H01L21/67144
Abstract: A chip matching system and a corresponding method are provided. The method defines a plurality of first electronic components in a first wafer as various grades of chips and defines a plurality of second electronic components in a second wafer as various grades of chips, and then grades of the first electronic components and the second electronic components are matched to generate target information, and finally the first and second electronic components are integrated in the same position according to the target information. Therefore, the highest-grade chips can be arranged in a multi-chip module to optimize the quality of the multi-chip module.
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公开(公告)号:US11973014B2
公开(公告)日:2024-04-30
申请号:US16690801
申请日:2019-11-21
Applicant: Siliconware Precision Industries Co., Ltd.
Inventor: Chang-Fu Lin , Chin-Tsai Yao , Chun-Tang Lin , Fu-Tang Huang
IPC: H01L23/498 , H01L21/48 , H01L21/56 , H01L23/00 , H01L23/31
CPC classification number: H01L23/49838 , H01L21/4853 , H01L21/4857 , H01L21/563 , H01L23/3185 , H01L23/49811 , H01L23/49822 , H01L23/49894 , H01L24/03 , H01L24/13 , H01L24/05 , H01L24/16 , H01L2224/0401 , H01L2224/05551 , H01L2224/05557 , H01L2224/05567 , H01L2224/10126 , H01L2224/10145 , H01L2224/10156 , H01L2224/10175 , H01L2224/13022 , H01L2224/13147 , H01L2224/16147 , H01L2224/16148 , H01L2224/16227 , H01L2224/16238 , H01L2224/73204 , H01L2224/81007 , H01L2224/81191 , H01L2224/81192 , H01L2224/81385 , H01L2224/81815 , H01L2924/3841 , H01L2224/13147 , H01L2924/00014
Abstract: Provided is a substrate structure including a substrate body, electrical contact pads and an insulating protection layer disposed on the substrate body, wherein the insulating protection layer has openings exposing the electrical contact pads, and at least one of the electrical contact pads has at least a concave portion filled with a filling material to prevent solder material from permeating along surfaces of the insulating protection layer and the electric contact pads, thereby eliminating the phenomenon of solder extrusion. Thus, bridging in the substrate structure can be eliminated even when the bump pitch between two adjacent electrical contact pads is small. As a result, short circuits can be prevented, and production yield can be increased.
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公开(公告)号:US20230076941A1
公开(公告)日:2023-03-09
申请号:US17988286
申请日:2022-11-16
Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.
Inventor: Wu-Hung Yen , Yi-Hsien Huang , Chun-Tang Lin , Shu-Hua Chen , Shou-Qi Chang
IPC: H01L21/67
Abstract: A chip matching system and a corresponding method are provided. The method defines a plurality of first electronic components in a first wafer as various grades of chips and defines a plurality of second electronic components in a second wafer as various grades of chips, and then grades of the first electronic components and the second electronic components are matched to generate target information, and finally the first and second electronic components are integrated in the same position according to the target information. Therefore, the highest-grade chips can be arranged in a multi-chip module to optimize the quality of the multi-chip module.
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公开(公告)号:US11227842B2
公开(公告)日:2022-01-18
申请号:US16875240
申请日:2020-05-15
Applicant: Siliconware Precision Industries Co., Ltd.
Inventor: Po-Hao Wang , Chang-Fu Lin , Chun-Tang Lin , Bo-Hao Chang
IPC: H01L23/00 , H01L23/498 , H01L23/31
Abstract: Provided is a substrate structure, including a substrate having at least one chamfer formed on a surface thereof, and a plurality of conductive bodies formed to the substrate. Therefore, a stress generated during the packaging process is alleviated through the chamfer, and the substrate structure is prevented from being cracked. An electronic package employing the substrate structure is also provided.
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公开(公告)号:US10763223B2
公开(公告)日:2020-09-01
申请号:US15494034
申请日:2017-04-21
Applicant: Siliconware Precision Industries Co., Ltd.
Inventor: Po-Hao Wang , Chang-Fu Lin , Chun-Tang Lin , Bo-Hao Chang
IPC: H01L23/00 , H01L23/31 , H01L23/498
Abstract: Provided is a substrate structure, including a substrate having at least one chamfer formed on a surface thereof, and a plurality of conductive bodies formed to the substrate. Therefore, a stress generated during the packaging process is alleviated through the chamfer, and the substrate structure is prevented from being cracked. An electronic package employing the substrate structure is also provided.
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公开(公告)号:US09842758B2
公开(公告)日:2017-12-12
申请号:US14836613
申请日:2015-08-26
Applicant: Siliconware Precision Industries Co., Ltd.
Inventor: Yan-Heng Chen , Chun-Tang Lin , Chieh-Yuan Chi
CPC classification number: H01L21/6835 , H01L21/568 , H01L23/295 , H01L24/19 , H01L25/105 , H01L2221/68318 , H01L2221/68359 , H01L2221/68368 , H01L2221/68372 , H01L2224/04105 , H01L2224/12105 , H01L2225/1035 , H01L2225/1041
Abstract: A method for fabricating a package structure is provided, including the steps of: disposing on a carrier a semiconductor chip having an active surface facing the carrier; forming a patterned resist layer on the carrier; forming on the carrier an encapsulant exposing an inactive surface of the semiconductor chip and a surface of the patterned resist layer; and removing the carrier to obtain a package structure. Thereafter, redistribution layers can be formed on the opposite sides of the package structure, and a plurality of through holes can be formed in the patterned resist layer by drilling, thus allowing a plurality of conductive through holes to be formed in the through holes for electrically connecting the redistribution layers on the opposite sides of the package structure. Therefore, the invention overcomes the conventional drawback of surface roughness of the through holes caused by direct drilling the encapsulant having filler particles.
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公开(公告)号:US09607974B2
公开(公告)日:2017-03-28
申请号:US14940554
申请日:2015-11-13
Applicant: Siliconware Precision Industries Co., Ltd.
Inventor: Chun-Tang Lin , Shih-Ching Chen , Yi-Che Lai , Hong-Da Chang , Hung-Wen Liu , Yi-Wei Liu , Hsi-Chang Hsu
IPC: H01L25/00 , H01L25/065 , H01L21/683 , H01L23/31 , H01L21/56 , H01L23/00
CPC classification number: H01L25/50 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L24/16 , H01L24/19 , H01L24/20 , H01L24/48 , H01L24/96 , H01L25/0657 , H01L25/105 , H01L2221/68359 , H01L2221/68372 , H01L2224/04042 , H01L2224/04105 , H01L2224/12105 , H01L2224/16227 , H01L2224/48091 , H01L2224/48227 , H01L2225/06548 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058 , H01L2924/00014 , H01L2924/15311 , H01L2924/181 , H01L2924/18162 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: A method for fabricating a package structure is provided, which includes: providing a first carrier having a circuit layer thereon; forming a plurality of conductive posts on the circuit layer and disposing at least an electronic element on the first carrier; forming an encapsulant on the first carrier to encapsulate the conductive posts, the circuit layer and the electronic element; and removing the first carrier, thereby dispensing with the conventional hole opening process for forming the conductive posts and hence reducing the fabrication costs.
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公开(公告)号:US09418874B2
公开(公告)日:2016-08-16
申请号:US14716272
申请日:2015-05-19
Applicant: Siliconware Precision Industries Co., Ltd.
Inventor: Wan-Ting Chen , Mu-Hsuan Chan , Yi-Chian Liao , Chun-Tang Lin , Yi-Che Lai
IPC: H01L21/00 , H01L21/56 , H01L23/28 , H01L23/538 , H01L23/31 , H01L23/00 , H01L23/498 , H01L21/78
CPC classification number: H01L21/561 , H01L21/56 , H01L21/563 , H01L21/565 , H01L21/78 , H01L23/28 , H01L23/31 , H01L23/3121 , H01L23/49827 , H01L23/49833 , H01L23/5384 , H01L24/81 , H01L24/83 , H01L24/94 , H01L24/96 , H01L24/97 , H01L2224/0401 , H01L2224/06181 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/10253 , H01L2924/157 , H01L2924/15788 , H01L2924/3511 , H01L2924/3512 , H01L2924/00012 , H01L2224/81
Abstract: A semiconductor package is provided, including: a carrier; at least an interposer disposed on the carrier; an encapsulant formed on the carrier for encapsulating the interposer while exposing a top side of the interposer; a semiconductor element disposed on the top side of the interposer; and an adhesive formed between the interposer and the semiconductor element. By encapsulating the interposer with the encapsulant, warpage of the interposer is avoided and a planar surface is provided for the semiconductor element to be disposed thereon, thereby improving the reliability of electrical connection between the interposer and the semiconductor element.
Abstract translation: 提供半导体封装,包括:载体; 至少设置在所述载体上的插入件; 形成在所述载体上的密封剂,用于在暴露所述插入件的顶侧的同时封装所述插入件; 设置在所述插入件的顶侧的半导体元件; 以及形成在插入件和半导体元件之间的粘合剂。 通过用封装剂封装插入件,避免了插入器的翘曲,并且为了将半导体元件设置在其上提供平坦的表面,从而提高了插入件与半导体元件之间的电连接的可靠性。
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公开(公告)号:US20160204093A1
公开(公告)日:2016-07-14
申请号:US15078418
申请日:2016-03-23
Applicant: Siliconware Precision Industries Co., Ltd.
Inventor: Chun-Tang Lin , Yi-Che Lai
IPC: H01L25/00 , H01L21/48 , H01L21/56 , H01L21/78 , H01L23/48 , H01L23/498 , H01L25/065 , H01L21/52 , H01L23/31
CPC classification number: H01L25/50 , H01L21/486 , H01L21/52 , H01L21/563 , H01L21/78 , H01L23/3114 , H01L23/3128 , H01L23/3135 , H01L23/481 , H01L23/49827 , H01L23/49833 , H01L25/065 , H01L25/0657 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/15174 , H01L2924/15311 , H01L2924/00
Abstract: A fabrication method of a semiconductor package is disclosed, which includes the steps of: disposing a plurality of first semiconductor elements on an interposer; forming a first encapsulant on the interposer for encapsulating the first semiconductor elements; disposing a plurality of second semiconductor elements on the first semiconductor elements; forming a second encapsulant on the first semiconductor elements and the first encapsulant for encapsulating the second semiconductor elements; and thinning the interposer, thereby reducing the overall stack thickness and preventing warpage of the interposer.
Abstract translation: 公开了一种半导体封装的制造方法,其包括以下步骤:在插入件上设置多个第一半导体元件; 在所述插入件上形成用于封装所述第一半导体元件的第一密封剂; 在所述第一半导体元件上设置多个第二半导体元件; 在所述第一半导体元件和所述第一密封剂上形成用于封装所述第二半导体元件的第二密封剂; 并使插入件变薄,从而减小整体堆叠厚度并防止插入件的翘曲。
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公开(公告)号:US20160111359A1
公开(公告)日:2016-04-21
申请号:US14862457
申请日:2015-09-23
Applicant: Siliconware Precision Industries Co., Ltd.
Inventor: Yan-Heng Chen , Chun-Tang Lin , Mu-Hsuan Chan , Chieh-Yuan Chi
IPC: H01L23/498 , H01L21/48
CPC classification number: H01L23/49811 , H01L21/486 , H01L21/568 , H01L23/5389 , H01L24/19 , H01L24/20 , H01L24/96 , H01L25/105 , H01L25/50 , H01L2224/04105 , H01L2224/12105 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058 , H01L2924/18162
Abstract: A method for fabricating an electronic package is provided, which includes the steps of: providing an insulating layer having at least an electronic element embedded therein; forming at least a first via hole on one side of the insulating layer; forming a first conductor in the first via hole of the insulating layer; forming on the insulating layer a first circuit structure electrically connected to the electronic element and the first conductor; and forming a second via hole on the other side of the insulating layer, wherein the second via hole communicates with the first via hole. As such, the second via hole and the first via hole constitute a through hole. Since the through hole is fabricated through two steps, the aspect ratio (depth/width) of the through hole can be adjusted according to the practical need so as to improve the process yield.
Abstract translation: 提供一种制造电子封装的方法,其包括以下步骤:提供至少具有嵌入其中的电子元件的绝缘层; 在所述绝缘层的一侧上形成至少第一通孔; 在绝缘层的第一通孔中形成第一导体; 在所述绝缘层上形成电连接到所述电子元件和所述第一导体的第一电路结构; 以及在所述绝缘层的另一侧上形成第二通孔,其中所述第二通孔与所述第一通孔连通。 这样,第二通孔和第一通孔构成通孔。 由于通孔通过两个步骤制造,所以可以根据实际需要调整通孔的纵横比(深度/宽度),以提高工艺成品率。
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