公开(公告)号：US09368939B2

公开(公告)日：2016-06-14

申请号：US14559149

申请日：2014-12-03

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01L21/00 ,  H01S5/343 ,  H01S5/22 ,  H01S5/02 ,  H01S5/00 ,  H01S5/022 ,  H01S5/20 ,  H01S5/32 ,  H01S5/40

CPC classification number: H01S5/34333 ,  H01L2224/18 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/16152 ,  H01L2924/3512 ,  H01S5/005 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/02248 ,  H01S5/02276 ,  H01S5/2009 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3214 ,  H01S5/4043 ,  H01S5/4093 ,  H01S2301/173 ,  H01S2301/176 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

Abstract translation: 一种制造激光二极管器件的方法包括提供具有表面区域并形成覆盖在该表面区域上的外延材料的衬底，所述外延材料包括n型覆层区域，所述有源区域包括至少一个覆盖在n型上的有源层 包层区域和覆盖有源层区域的p型覆层区域。 外延材料被图案化以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于第一间距。

公开(公告)号：US09166372B1

公开(公告)日：2015-10-20

申请号：US14317846

申请日：2014-06-27

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Christiane Elsass ,  Thiago P. Melo ,  Mathew C. Schmidt

IPC: H01S5/02 ,  H01S5/22 ,  H01S5/343 ,  H01S5/227 ,  H01L21/02 ,  H01S5/32

CPC classification number: H01S5/34333 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/0425 ,  H01S5/1082 ,  H01S5/2201 ,  H01S5/2275 ,  H01S5/3063 ,  H01S5/3202 ,  H01S2301/173 ,  H01S2304/12

Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.

Abstract translation: 含镓和氮的激光二极管器件。 该器件具有包含表面区域的含镓和氮的衬底材料。 表面区域配置在非极性晶体取向或半极性晶体取向上。 该器件具有形成在衬底材料的第二区域内的凹陷区域，第二区域位于第一区域和第三区域之间。 凹陷区域被配置为阻挡多个缺陷从第一区域迁移到第三区域。 该器件具有形成在第三区域上的外延形成的含镓和氮的区域。 外延形成的含镓和氮的区域基本上没有从第一区域迁移的缺陷和形成在第三区域上的有源区域。

公开(公告)号：US20150229107A1

公开(公告)日：2015-08-13

申请号：US14312427

申请日：2014-06-23

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  Dan Steigerwald ,  James W. Raring

IPC: H01S5/40 ,  H01S5/30 ,  H01S5/02

CPC classification number: H01S5/4093 ,  H01L24/83 ,  H01L24/95 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/16152 ,  H01S5/0203 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/32325 ,  H01S5/32341 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

Abstract translation: 一种制造激光二极管器件的方法包括提供具有表面区域并形成覆盖在该表面区域上的外延材料的衬底，所述外延材料包括n型覆层区域，所述有源区域包括至少一个覆盖在n型上的有源层 包层区域和覆盖有源层区域的p型覆层区域。 外延材料被图案化以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于第一间距。

公开(公告)号：US10903625B2

公开(公告)日：2021-01-26

申请号：US16586100

申请日：2019-09-27

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01S5/343 ,  H01S5/22 ,  H01S5/02 ,  H01S5/20 ,  H01S5/32 ,  H01S5/00 ,  H01S5/022 ,  H01S5/40

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

公开(公告)号：US10903623B2

公开(公告)日：2021-01-26

申请号：US16411977

申请日：2019-05-14

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring

IPC: H01L33/12 ,  H01S5/343 ,  H01L33/00 ,  H01L21/02 ,  H01L21/784 ,  H01S5/22 ,  H01S5/042 ,  H01S5/022 ,  H01S5/02 ,  C30B29/40 ,  H01L33/32

Abstract: The present disclosure provides a method and structure for producing large area gallium and nitrogen engineered substrate members configured for the epitaxial growth of layer structures suitable for the fabrication of high performance semiconductor devices. In a specific embodiment the engineered substrates are used to manufacture gallium and nitrogen containing devices based on an epitaxial transfer process wherein as-grown epitaxial layers are transferred from the engineered substrate to a carrier wafer for processing. In a preferred embodiment, the gallium and nitrogen containing devices are laser diode devices operating in the 390 nm to 425 nm range, the 425 nm to 485 nm range, the 485 nm to 550 nm range, or greater than 550 nm.

公开(公告)号：US10854776B1

公开(公告)日：2020-12-01

申请号：US16796154

申请日：2020-02-20

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01L33/00 ,  H01L29/205 ,  H01L33/06 ,  H01L29/66 ,  H01L23/00 ,  H01L33/32 ,  H01S5/02 ,  H01L21/311 ,  H01L21/683 ,  H01L27/06 ,  H01L27/12 ,  H01L21/02 ,  H01L29/20 ,  H01L27/088 ,  H01L27/15 ,  H01S5/227 ,  H01S5/343

Abstract: A method for manufacturing a display panel comprising light emitting device including micro LEDs includes providing multiple donor wafers having a surface region and forming an epitaxial material overlying the surface region. The epitaxial material includes an n-type region, an active region comprising at least one light emitting layer overlying the n-type region, and a p-type region overlying the active layer region. The multiple donor wafers are configured to emit different color emissions. The epitaxial material on the multiple donor wafers is patterned to form a plurality of dice, characterized by a first pitch between a pair of dice less than a design width. At least some of the dice are selectively transferred from the multiple donor wafers to a common carrier wafer such that the carrier wafer is configured with different color emitting LEDs. The different color LEDs could comprise red-green-blue LEDs to form a RGB display panel.

公开(公告)号：US10693279B1

公开(公告)日：2020-06-23

申请号：US16556081

申请日：2019-08-29

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  James W. Raring

IPC: H01L29/20 ,  H01S5/02 ,  H01S5/00 ,  H01S5/022 ,  H01L33/16 ,  H01L23/00 ,  H01L33/50 ,  H01S5/343 ,  H01S5/32 ,  H01S5/028 ,  H01S5/042 ,  H01S5/22

Abstract: In an example, the present invention provides a gallium and nitrogen containing structure. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates having one or more epitaxially grown layers. The structure has a first handle substrate coupled to each of the substrates. The orientation of a reference crystal direction for each of the substrates are parallel to within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrates.

公开(公告)号：US10658810B2

公开(公告)日：2020-05-19

申请号：US16199974

申请日：2018-11-26

Applicant: Soraa Laser Diode, Inc.

Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

IPC: H01S5/02 ,  H01S5/022 ,  H01S5/32 ,  H01S5/343

Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.

公开(公告)号：US20190326988A1

公开(公告)日：2019-10-24

申请号：US15954493

申请日：2018-04-16

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Paul Rudy ,  Vlad Novotny

IPC: H04B10/116 ,  H01S5/343 ,  H01S5/00 ,  G02B27/09 ,  H01S5/22 ,  H04B10/50 ,  H04B10/60 ,  H04B10/524 ,  H04B10/564 ,  H04B10/572 ,  H01L33/00

Abstract: A smart light source configured for visible light communication. The light source includes a controller comprising a modem configured to receive a data signal and generate a driving current and a modulation signal based on the data signal. Additionally, the light source includes a light emitter configured as a pump-light device to receive the driving current for producing a directional electromagnetic radiation with a first peak wavelength in the ultra-violet or blue wavelength regime modulated to carry the data signal using the modulation signal. Further, the light source includes a pathway configured to direct the directional electromagnetic radiation and a wavelength converter optically coupled to the pathway to receive the directional electromagnetic radiation and to output a white-color spectrum. Furthermore, the light source includes a beam shaper configured to direct the white-color spectrum for illuminating a target of interest and transmitting the data signal.

公开(公告)号：US20190323663A1

公开(公告)日：2019-10-24

申请号：US16449126

申请日：2019-06-21

Applicant: Soraa Laser Diode, Inc.

Inventor： Paul Rudy ,  James W. Raring ,  Eric Goutain ,  Troy Trottier ,  Melvin McLaurin ,  James Harrison ,  Sten Heikman ,  Michael Cantore

IPC: F21K9/64 ,  H01S5/024 ,  H01S5/40 ,  H01S5/00 ,  F21K9/69 ,  F21K9/68 ,  H01S5/022 ,  F21K9/90 ,  F21V29/70 ,  H01S5/343

Abstract: The embodiments described herein provide a high-luminous flux laser-based white light source. A plurality of laser packages are arranged in an array pattern on a common support member. The plurality of laser packages each include one or more laser diode devices and a phosphor member. The phosphor member converts a fraction of the electromagnetic radiation from each of the laser diode devices to an emitted electromagnetic radiation and a white light is outputted.