公开(公告)号：US20070218655A1

公开(公告)日：2007-09-20

申请号：US11655572

申请日：2007-01-19

申请人： Hitoshi Sato ,  John Kaeding ,  Michael Iza ,  Troy Baker ,  Benjamin Haskell ,  Steven DenBaars ,  Shuji Nakamura

发明人： Hitoshi Sato ,  John Kaeding ,  Michael Iza ,  Troy Baker ,  Benjamin Haskell ,  Steven DenBaars ,  Shuji Nakamura

IPC分类号： H01L21/20

CPC分类号： H01L29/045 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02365 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262

摘要： A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1−xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1−xN nucleation layer, and cooling the substrate under a nitrogen overpressure.

摘要翻译： 通过使用含有至少一些铟的（Al，In，Ga）N成核层，通过金属有机化学气相沉积（MOCVD）增强器件质量的平面半极性半导体薄膜的生长的方法。 具体地说，该方法包括将衬底装载到反应器中，在氮气和/或氢气和/或氨气流下加热衬底，沉积In x N 1 Ga 1-x

公开(公告)号：US20060205199A1

公开(公告)日：2006-09-14

申请号：US11372914

申请日：2006-03-10

申请人： Troy Baker ,  Benjamin Haskell ,  Paul Fini ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

发明人： Troy Baker ,  Benjamin Haskell ,  Paul Fini ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

IPC分类号： H01L21/28 ,  H01L21/3205

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  Y10S438/938

摘要： A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10{overscore (1)}1} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10{overscore (1)}3} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11{overscore (2)}2} gallium nitride (GaN) grown on a {1{overscore (1)}00} sapphire substrate, and (4) {11{overscore (1)}3} gallium nitride (GaN) grown on a {1{overscore (1)}00} sapphire substrate

摘要翻译： 一种在杂交尖晶石衬底上生长平面，半极性氮化物膜的方法，其中大面积的平面半极性氮化物膜平行于衬底的表面。 平面膜和衬底是：（1）在{100}尖晶石衬底上在{100}尖晶石衬底上生长的（10）{（氮化镓）氮化镓（GaN）（2）{10 {超（13）氮化镓（GaN） 在{110}尖晶石衬底上生长，（3）在{1 {超（100）蓝宝石衬底上生长的{11（超（22）个氮化镓（GaN））和（4）{11 {超（13） （GaN）生长在{1 {超（100）蓝宝石衬底上

公开(公告)号：US20050247950A1

公开(公告)日：2005-11-10

申请号：US10841016

申请日：2004-05-06

申请人： Shuji Nakamura ,  Steven DenBaars

发明人： Shuji Nakamura ,  Steven DenBaars

IPC分类号： H01L33/00 ,  H01L33/10 ,  H01L33/46 ,  H01L21/46

CPC分类号： H01L33/465 ,  H01L33/0079 ,  H01L33/105

摘要： One embodiment of a method according to the present invention for fabricating a high light extraction photonic device comprises growing a lift-off layer on a substrate and growing an epitaxial semiconductor device structure on the lift-off layer such that the lift-off layer is sandwiched between said device structure and substrate. The epitaxial semiconductor structure comprises an emitter adapted to emit light in response to a bias. The device structure, lift-off layer and substrate is flip-chip mounted on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and lift-off layer. The lift-off layer is removed to separate the substrate from the device structure. Different removal methods can be used such as removal by a photo electrochemical etch or by illuminating the lift-off layer with laser light.

摘要翻译： 根据本发明的用于制造高光提取光子器件的方法的一个实施例包括在衬底上生长剥离层并在剥离层上生长外延半导体器件结构，使得剥离层夹在 在所述器件结构和衬底之间。 外延半导体结构包括适于响应于偏压而发光的发射极。 器件结构，剥离层和衬底被倒装安装在基座上，使得外延半导体器件结构夹在子安装座和剥离层之间。 去除剥离层以将衬底与器件结构分离。 可以使用不同的去除方法，例如通过光电化学蚀刻去除或通过用激光照射剥离层。

公开(公告)号：US20170327969A1

公开(公告)日：2017-11-16

申请号：US15607319

申请日：2017-05-26

申请人： Kenji Iso ,  Hisashi Yamada ,  Makoto Saito ,  Asako Hirai ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

发明人： Kenji Iso ,  Hisashi Yamada ,  Makoto Saito ,  Asako Hirai ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC分类号： C30B25/18 ,  C30B25/02 ,  C30B29/40 ,  H01L33/32 ,  H01L33/16 ,  H01L29/20 ,  H01L29/04 ,  B82Y20/00 ,  H01L21/02 ,  H01S5/32 ,  H01S5/343

CPC分类号： C30B25/18 ,  B82Y20/00 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nonpolar III-nitride film grown on a miscut angle of a substrate. The miscut angle towards the direction is 0.75° or greater miscut and less than 27° miscut towards the direction. Surface undulations are suppressed and may comprise faceted pyramids. A device fabricated using the film is also disclosed. A nonpolar III-nitride film having a smooth surface morphology fabricated using a method comprising selecting a miscut angle of a substrate upon which the nonpolar III-nitride films are grown in order to suppress surface undulations of the nonpolar III-nitride films. A nonpolar III-nitride-based device grown on a film having a smooth surface morphology grown on a miscut angle of a substrate which the nonpolar III-nitride films are grown. The miscut angle may also be selected to achieve long wavelength light emission from the nonpolar film.

公开(公告)号：US09133564B2

公开(公告)日：2015-09-15

申请号：US13283862

申请日：2011-10-28

申请人： Siddha Pimputkar ,  James S. Speck ,  Shuji Nakamura ,  Shin-Ichiro Kawabata

发明人： Siddha Pimputkar ,  James S. Speck ,  Shuji Nakamura ,  Shin-Ichiro Kawabata

IPC分类号： C30B7/10 ,  C30B29/40

CPC分类号： C30B7/105 ,  C30B29/403 ,  Y10T428/24479

摘要： An ammonothermal growth of group-III nitride crystals on starting seed crystals with at least two surfaces making an acute, right or obtuse angle, i.e., greater than 0 degrees and less than 180 degrees, with respect to each other, such that the exposed surfaces together form a concave surface.

摘要翻译： III族氮化物晶体在具有至少两个表面的起始晶种上相对于彼此形成锐角，右或钝角，即大于0度且小于180度的氨热生长，使得暴露表面 一起形成凹面。

公开(公告)号：US09040327B2

公开(公告)日：2015-05-26

申请号：US13495231

申请日：2012-06-13

申请人： Daniel F. Feezell ,  Mathew C. Schmidt ,  Kwang-Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Daniel F. Feezell ,  Mathew C. Schmidt ,  Kwang-Choong Kim ,  Robert M. Farrell ,  Daniel A. Cohen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L21/00 ,  H01L29/06 ,  H01L33/32 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/02 ,  H01L33/06 ,  H01S5/32 ,  H01S5/343

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/16 ,  H01S5/3211 ,  H01S5/34333

摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.

摘要翻译： 一种制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。

公开(公告)号：US08795440B2

公开(公告)日：2014-08-05

申请号：US13313335

申请日：2011-12-07

申请人： Bilge M. Imer ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Bilge M. Imer ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： C30B25/02 ,  C30B25/18 ,  H01L21/02

CPC分类号： H01L21/02658 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262

摘要： A method of growing non-polar m-plane III-nitride film, such as GaN, AlN, AlGaN or InGaN, wherein the non-polar m-plane III-nitride film is grown on a suitable substrate, such as an m-SiC, m-GaN, LiGaO2 or LiAlO2 substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer, such as aluminum nitride (AlN), on the annealed substrate, and growing the non-polar m-plane III-nitride film on the nucleation layer using MOCVD.

摘要翻译： 生长非极性m面III族氮化物膜的方法，例如GaN，AlN，AlGaN或InGaN，其中非极性m面III族氮化物膜在合适的衬底上生长，例如m-SiC ，m-GaN，LiGaO2或LiAlO2基板，使用金属有机化学气相沉积（MOCVD）。 该方法包括进行溶剂清洁和浸渍基底以从表面除去氧化物，退火基底，在退火的基底上生长诸如氮化铝（AlN）的成核层，以及生长非极性m- 使用MOCVD在成核层上的III型氮化物膜。

公开(公告)号：US08779308B2

公开(公告)日：2014-07-15

申请号：US13367752

申请日：2012-02-07

申请人： Akihiko Takemae ,  Norio Endo ,  Shuji Nakamura ,  Tamotsu Koike ,  Takeshi Nishino

发明人： Akihiko Takemae ,  Norio Endo ,  Shuji Nakamura ,  Tamotsu Koike ,  Takeshi Nishino

IPC分类号： H01H9/26 ,  H01H3/12 ,  H01H13/36 ,  H01H13/14

CPC分类号： H01H3/125 ,  H01H13/14 ,  H01H13/36 ,  H01H13/702 ,  H01H2203/038 ,  H01H2227/036

摘要： A key switch device including a key top; a pair of link members connected to the key top and interlocked with each other to guide a vertical motion of the key top; a switch mechanism including a membrane sheet switch capable of opening and closing a contact section of an electrical circuit in accordance with the vertical motion of the key top; a flexible thin film sheet attached to the membrane sheet switch; and a housing attached to the thin film sheet, the housing adapted to connect the link members to the thin film sheet.

摘要翻译： 一种钥匙开关装置，包括键顶; 一对连接构件，连接到键顶并互锁，以引导键顶的垂直运动; 开关机构，其包括根据键顶的垂直运动能够打开和闭合电路的接触部分的膜片开关; 安装在薄片开关上的柔性薄膜片; 以及附接到所述薄膜片的壳体，所述壳体适于将所述连接构件连接到所述薄膜片。

公开(公告)号：US08729671B2

公开(公告)日：2014-05-20

申请号：US13327521

申请日：2011-12-15

申请人： Asako Hirai ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

发明人： Asako Hirai ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC分类号： H01L29/20

CPC分类号： C30B33/00 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/2003

摘要： A method for fabricating a high quality freestanding nonpolar and semipolar nitride substrate with increased surface area, comprising stacking multiple films by growing the films one on top of each other with different and non-orthogonal growth directions.

摘要翻译： 一种用于制造具有增加的表面积的高质量独立非极性和半极性氮化物衬底的方法，包括通过用不同的和非正交的生长方向将膜形成在一个层叠上来堆叠多个膜。

公开(公告)号：US08709371B2

公开(公告)日：2014-04-29

申请号：US11921396

申请日：2005-07-08

申请人： Kenji Fujito ,  Tadao Hashimoto ,  Shuji Nakamura

发明人： Kenji Fujito ,  Tadao Hashimoto ,  Shuji Nakamura

IPC分类号： C01B21/06 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B7/105 ,  C30B7/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1096

摘要： A method of growing high-quality, group-III nitride, bulk single crystals. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal. The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600° C. The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals.

摘要翻译： 生长高品质，III族氮化物，大块单晶的方法。 III族氮化物本体晶体在超临界氨的高压釜中使用源材料或营养物生长，所述源材料或营养物是具有至少10微米或更小的晶粒尺寸的III族氮化物多晶体或III族金属，以及晶种， 是III族氮化物单晶。 III族氮化物多晶体可以在600℃以上的还原气体中退火之后从先前的氨热处理中回收。高压釜可以包括填充有氨的内部室，其中氨从内部室释放到高压釜 当氨在高压釜加热后达到超临界状态时，超临界氨的对流转移源材料并将转移的原材料沉积到晶种上，而防止源材料的未溶解颗粒被转移并沉积在 晶种。