公开(公告)号：US20120025064A1

公开(公告)日：2012-02-02

申请号：US13271300

申请日：2011-10-12

申请人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

发明人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

IPC分类号： H01J40/14

CPC分类号： H01L27/14609 ,  H01L27/12 ,  H01L27/14692

摘要： In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can also be reduced.

摘要翻译： 在采用非晶硅光电二极管的光学传感器装置中，由于传感器元件的低电流容量需要外部放大器IC等，以提高负载驱动能力。 这导致光学传感器装置的成本和安装空间的增加。 此外，由于光电二极管和放大器IC在印刷电路板上彼此连接，噪声可能容易地叠加。 根据本发明，非晶硅光电二极管和由薄膜晶体管构成的放大器一体地形成在基板上，从而提高负载驱动能力，同时降低成本和安装空间。 叠加噪音也可以减少。

公开(公告)号：US08053816B2

公开(公告)日：2011-11-08

申请号：US11681638

申请日：2007-03-02

申请人： Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi

发明人： Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi

IPC分类号： H01L27/148

CPC分类号： H01L27/14632 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692

摘要： It is an object of the present invention to obtain a photoelectric conversion device having a favorable spectral sensitivity characteristic and no variation in output current without such a contamination substance mixed into a photoelectric conversion layer or a transistor. Further, it is another object of the present invention to obtain a highly reliable semiconductor device in a semiconductor device having such a photoelectric conversion device. The present invention relates to a semiconductor device including, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer having a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer, over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.

摘要翻译： 本发明的目的是获得具有良好的光谱灵敏度特性的光电转换装置，并且没有混入光电转换层或晶体管中的污染物质的输出电流的变化。 此外，本发明的另一个目的是在具有这种光电转换装置的半导体器件中获得高度可靠的半导体器件。 本发明涉及一种在绝缘表面上包括第一电极的半导体器件; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及具有p型半导体层，i型半导体层和n型半导体层的光电转换层，其中光电转换层的一个端部与第一电极接触， 并且其中滤色器的端部位于光电转换层的另一端部的内部。

公开(公告)号：US07851278B2

公开(公告)日：2010-12-14

申请号：US12000599

申请日：2007-12-14

申请人： Kazuo Nishi ,  Hiroki Adachi ,  Junya Maruyama ,  Naoto Kusumoto ,  Yuusuke Sugawara ,  Tomoyuki Aoki ,  Eiji Sugiyama ,  Hironobu Takahashi

发明人： Kazuo Nishi ,  Hiroki Adachi ,  Junya Maruyama ,  Naoto Kusumoto ,  Yuusuke Sugawara ,  Tomoyuki Aoki ,  Eiji Sugiyama ,  Hironobu Takahashi

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L31/0203 ,  H01L27/1446 ,  H01L27/14618 ,  H01L31/048 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

摘要： The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.

摘要翻译： 本发明提供一种半导体器件，其形成在绝缘基板上，通常是半导体器件，其具有可以在光学传感器，太阳能电池或使用TFT的电路中增加布线板的安装强度的结构，并且其可以 使其安装在高密度的布线板上，并且还提供其制造方法。 根据本发明，在半导体器件中，半导体元件形成在绝缘基板上，在半导体器件的侧面形成有凹部，与半导体元件电连接的导电膜形成在凹部 一部分。

公开(公告)号：US07824950B2

公开(公告)日：2010-11-02

申请号：US12078196

申请日：2008-03-27

申请人： Yohei Monma ,  Daiki Yamada ,  Hidekazu Takahashi ,  Yuusuke Sugawara ,  Kazuo Nishi

发明人： Yohei Monma ,  Daiki Yamada ,  Hidekazu Takahashi ,  Yuusuke Sugawara ,  Kazuo Nishi

IPC分类号： H01L21/00

CPC分类号： H01L27/14683 ,  H01L27/14618 ,  H01L31/0203 ,  H01L2224/13 ,  H01L2924/07811 ,  H01L2924/00

摘要： In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.

摘要翻译： 在安装在布线板上的半导体装置的制造中，在玻璃基板上形成半导体电路部。 然后，具有连接端子的插入件被接​​合到半导体电路部分。 之后，从半导体电路部分剥离玻璃基板，并且从分离面的方向注入模塑树脂以覆盖半导体电路部分的周边。 然后，将模塑树脂在预定条件下加热以硬化。

公开(公告)号：US07679091B2

公开(公告)日：2010-03-16

申请号：US12078090

申请日：2008-03-27

申请人： Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara

发明人： Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara

IPC分类号： H01L27/15

CPC分类号： H01L24/16 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/17 ,  H01L24/81 ,  H01L27/12 ,  H01L27/14618 ,  H01L27/14643 ,  H01L31/02005 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/1147 ,  H01L2224/16 ,  H01L2224/8121 ,  H01L2224/8122 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01054 ,  H01L2924/0106 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/12043 ,  H01L2924/15787 ,  H01L2224/13099 ,  H01L2924/00015 ,  H01L2924/00

摘要： A semiconductor device, particularly, a photoelectric conversion element having a semiconductor layer is demonstrated. The photoelectric conversion element of the present invention comprises, over a substrate, a photoelectric conversion layer and first and second electrodes which are electrically connected to the photoelectric conversion layer. The photoelectric conversion element further comprises a wiring board over which a third and fourth electrodes are provided. The characteristic point of the present invention is that a bonding layer, which readily forms an alloy with a conductive material, is formed over the first and second electrodes. This bonding layer improves the bonding strength between the first and third electrodes and the second and fourth electrode, which contributes to the prevention of the connection defect between the substrate and the wiring board and consequentially to high reliability of the photoelectric conversion element.

摘要翻译： 证明了半导体器件，特别是具有半导体层的光电转换元件。 本发明的光电转换元件在基板上包括光电转换层和电连接到光电转换层的第一和第二电极。 光电转换元件还包括配置有第三和第四电极的布线板。 本发明的特征在于，在第一和第二电极上形成有与导电材料形成合金的接合层。 该接合层改善了第一和第三电极与第二和第四电极之间的接合强度，这有助于防止基板和布线板之间的连接缺陷，从而导致光电转换元件的高可靠性。

公开(公告)号：US07666766B2

公开(公告)日：2010-02-23

申请号：US11526097

申请日：2006-09-25

申请人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

发明人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

IPC分类号： H01L21/20 ,  C23C16/54

CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/458 ,  C23C16/545 ,  H05H1/2406 ,  H05H2001/2431 ,  H05H2001/485 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.

摘要翻译： 成膜装置技术领域本发明涉及一种成膜装置，其特征在于，包括具有用于送出基板的辊的第一转印室，具有排出电极的成膜室，设置在转印室和成膜室之间或成膜室之间的缓冲室 设置在衬底在缓冲室中进出的部分的狭缝，以及具有用于重新卷绕衬底的辊的第二传送室。 狭缝设置有至少一个触摸辊，并且触摸辊与基板的成膜表面接触。 此外，本发明还涉及一种用于形成膜的方法和通过使用这种成膜装置进行的光电转换装置的制造方法。

公开(公告)号：US07652658B2

公开(公告)日：2010-01-26

申请号：US10807543

申请日：2004-03-24

申请人： Kazuo Nishi ,  Yu Yamazaki ,  Tomoyuki Iwabuchi ,  Keisuke Miyagawa

发明人： Kazuo Nishi ,  Yu Yamazaki ,  Tomoyuki Iwabuchi ,  Keisuke Miyagawa

IPC分类号： G09G5/00

CPC分类号： G01J1/0209 ,  G01J1/0233 ,  G01J1/0247 ,  G01J1/0271 ,  G01J1/4204 ,  G01J1/4228 ,  G02F1/13318 ,  G02F2001/133342 ,  G09G2360/04 ,  H04M1/0214 ,  H04M1/0245 ,  H04M2250/12

摘要： A photodetector of the invention is characterized by having a plurality of detector elements that are arranged over a light-transparent substrate and are connected in parallel. A foldable portable communication tool having two display portions of the invention is characterized by including one photodetector which includes a plurality of detector elements connected in parallel.

摘要翻译： 本发明的光电检测器的特征在于具有多个检测器元件，其布置在透光基板上并且并联连接。 具有本发明的两个显示部分的可折叠便携式通信工具的特征在于包括一个光电检测器，其包括并联连接的多个检测器元件。

公开(公告)号：US07180197B2

公开(公告)日：2007-02-20

申请号：US10951811

申请日：2004-09-29

申请人： Kazuo Nishi ,  Hiroki Adachi ,  Naoto Kusumoto ,  Yuusuke Sugawara ,  Hidekazu Takahashi ,  Daiki Yamada ,  Yoshikazu Hiura

发明人： Kazuo Nishi ,  Hiroki Adachi ,  Naoto Kusumoto ,  Yuusuke Sugawara ,  Hidekazu Takahashi ,  Daiki Yamada ,  Yoshikazu Hiura

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L31/0203 ,  H01L23/49805 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/83851 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07811 ,  H01L2924/09701 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014

摘要： The present invention provides a semiconductor device having a structure that can be mounted on a wiring substrate, as for the semiconductor device formed over a thin film-thickness substrate, a film-shaped substrate, or a sheet-like substrate. In addition, the present invention provides a method for manufacturing a semiconductor device that is capable of raising a reliability of mounting on a wiring substrate. One feature of the present invention is to bond a semiconductor element formed on a substrate having isolation to a member that a conductive film is formed via a medium having an anisotropic conductivity.

摘要翻译： 本发明提供一种半导体器件，其具有能够安装在布线基板上的结构，对于形成在薄膜基板，薄膜状基板或片状基板上的半导体器件。 另外，本发明提供一种能够提高安装在布线基板上的可靠性的半导体装置的制造方法。 本发明的一个特征是通过具有各向异性导电性的介质将形成在具有隔离衬底的半导体元件与形成有导电膜的构件接合。

公开(公告)号：US20050082655A1

公开(公告)日：2005-04-21

申请号：US10951811

申请日：2004-09-29

申请人： Kazuo Nishi ,  Hiroki Adachi ,  Naoto Kusumoto ,  Yuusuke Sugawara ,  Hidekazu Takahashi ,  Daiki Yamada ,  Yoshikazu Hiura

发明人： Kazuo Nishi ,  Hiroki Adachi ,  Naoto Kusumoto ,  Yuusuke Sugawara ,  Hidekazu Takahashi ,  Daiki Yamada ,  Yoshikazu Hiura

IPC分类号： H01L27/14 ,  H01L21/60 ,  H01L23/12 ,  H01L23/498 ,  H01L27/146 ,  H01L31/0203 ,  H01L31/04 ,  H01L31/10 ,  H01L29/792

CPC分类号： H01L31/0203 ,  H01L23/49805 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/83851 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07811 ,  H01L2924/09701 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014

摘要： The present invention provides a semiconductor device having a structure that can be mounted on a wiring substrate, as for the semiconductor device formed over a thin film-thickness substrate, a film-shaped substrate, or a sheet-like substrate. In addition, the present invention provides a method for manufacturing a semiconductor device that is capable of raising a reliability of mounting on a wiring substrate. One feature of the present invention is to bond a semiconductor element formed on a substrate having isolation to a member that a conductive film is formed via a medium having an anisotropic conductivity.

摘要翻译： 本发明提供一种半导体器件，其具有能够安装在布线基板上的结构，对于形成在薄膜基板，薄膜状基板或片状基板上的半导体器件。 另外，本发明提供一种能够提高安装在布线基板上的可靠性的半导体装置的制造方法。 本发明的一个特征是通过具有各向异性导电性的介质将形成在具有隔离衬底的半导体元件与形成有导电膜的构件接合。

公开(公告)号：US20050056842A1

公开(公告)日：2005-03-17

申请号：US10749552

申请日：2004-01-02

申请人： Kazuo Nishi ,  Toru Takayama ,  Yuugo Goto

发明人： Kazuo Nishi ,  Toru Takayama ,  Yuugo Goto

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/144 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/1446 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2224/05599

摘要： The manufacturing method of a semiconductor device according to the present invention comprises steps of forming a metal film, an insulating film, and an amorphous semiconductor film in sequence over a first substrate; crystallizing the metal film and the amorphous semiconductor film; forming a first semiconductor element by using the crystallized semiconductor film as an active region; attaching a support to the first semiconductor element by using an adhesive; causing separation between the metal film and the insulating film; attaching a second substrate to the separated insulating film; separating the support by removing the adhesive; forming an amorphous semiconductor film over the first semiconductor element; and forming a second semiconductor element using the amorphous semiconductor film as an active region.

摘要翻译： 根据本发明的半导体器件的制造方法包括以下步骤：在第一衬底上依次形成金属膜，绝缘膜和非晶半导体膜; 使金属膜和非晶半导体膜结晶化; 通过使用结晶化的半导体膜作为活性区域形成第一半导体元件; 通过使用粘合剂将支撑件附接到第一半导体元件; 导致金属膜和绝缘膜之间的分离; 将第二基板附接到所述分离的绝缘膜; 通过去除粘合剂来分离载体; 在所述第一半导体元件上形成非晶半导体膜; 以及使用所述非晶半导体膜形成作为有源区的第二半导体元件。