摘要:
An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.
摘要:
The present invention relates generally to thermally-conductive pastes for use with integrated circuits, and particularly, but not by way of limitation, to self-orienting microplates of graphite.
摘要:
A probe or an electrical connector comprises a substrate with a surface having a plurality of electrical contact locations. A shaped elongated electrical conductor has a first end coupled to one of the electrical contact locations and a second end thereof which projects away from the electrical contact location and through an aperture in a sheet of material. The sheet is disposed to be spaced apart from the surface of the substrate. At the second end of the elongated electrical conductor there is a tip structure, which is larger than the aperture in the sheet of material. The tip structure has a pointed portion thereof. The tip structure is disposed against contact locations of a contact surface. The electronic structure is moved towards the contact surface permitting the tip structure to penetrate into the surface of the electrical contact location thereon and to move, wipe, or vibrate across the surface thereof as the shaped elongated electrical conductor flexes as a result of being compressed by the movement of the electronic structure toward the contact surface.
摘要:
The present invention relates generally to thermally-conductive pastes for use with integrated circuits, and particularly, but not by way of limitation, to self-orienting microplates of graphite.
摘要:
The present invention relates generally to thermally-conductive pastes for use with integrated circuits, and particularly, but not by way of limitation, to self-orienting microplates of graphite.
摘要:
The present invention is a patterned metal thermal interface. In one embodiment a system for dissipating heat from a heat-generating device includes a heat sink having a first surface adapted for thermal coupling to a first surface of the heat generating device and a thermal interface having at least one patterned surface, the thermal interface being adapted to thermally couple the first surface of the heat sink to the first surface of the heat generating device. The patterned surface of the thermal interface allows the thermal interface to deform under compression between the heat sink and the heat generating device, leading to better conformity of the thermal interface to the surfaces of the heat sink and the heat generating device.
摘要:
The present invention is hybrid liquid metal-solder thermal interface. In one embodiment, a thermal interface for coupling a heat generating device to a heat sink includes a first metal interface layer, a second metal interface layer, and an isolation layer positioned between the first metal interface layer and the second metal interface layer, where at least one of the first metal interface layer and the second metal interface layer comprises a liquid metal.
摘要:
A portion of compliant material includes four walls defining a slot. The slot has a relatively large cross-section end in fluid communication with a solder reservoir, and also has a relatively small cross-section end opposed to the relatively large cross-section end. The slot has a generally elongate rectangular shape when viewed in plan, with a length perpendicular to a scan direction, a width, parallel to the scan direction, associated with the relatively large cross section end, and a width, parallel to the scan direction, associated with the relatively small cross section end. The slot is configured in the portion of compliant material such that the relatively small cross-section end of the slot normally remains substantially closed, but locally opens sufficiently to dispense solder from the reservoir when under fluid pressure and locally unsupported by a workpiece. Methods of operation and fabrication are also disclosed.
摘要:
A process comprises manufacturing an electromigration-resistant under-bump metallization (UBM) flip chip structure comprising a Cu layer by applying to the Cu layer a metallic reaction barrier layer comprising NiFe. The solder employed in the flip chip structure comprise substantially lead-free tin. A structure comprises a product produced by this process. In another embodiment a process comprises manufacturing an electromigration-resistant UBM Sn-rich Pb-free solder bump flip chip structure wherein the electromigration-resistant UBM structure comprises a four-layer structure, or a three-layer structure, wherein the four layer structure is formed by providing 1) an adhesion layer, 2) a Cu seed layer for plating, 3) a reaction barrier layer, and 4) a wettable layer for joining to the solder, and the three-layer structure is formed by providing 1) an adhesion layer, 2) a reaction barrier layer, and 3) a wettable layer. In a further embodiment, the reaction barrier layer comprises metals selected from Ni, Fe, Pd, Pt, Co, Cu and their alloys, and combinations thereof. A structure comprises a product produced by the immediately foregoing process.
摘要:
Methods and UBM structures having bilayer or trilayer UBM layers that include a thin TiW adhesion layer and a thick Ni-based barrier layer thereover both deposited under sputtering operating conditions that provide the resultant bilayer or trilayer UBM layers with minimal composite stresses. The Ni-based barrier layer may be pure Ni or a Ni alloy. These UBM layers may be patterned to fabricate bilayer or trilayer UBM capture pads, followed by joining a lead-free solder thereto for providing lead-free solder joints that maintain reliability after multiple reflows. Optionally, the top layer of the trilayer UBM structures may include soluble or insoluble metals for doping the lead-free solder connections.