公开(公告)号：US20080116439A1

公开(公告)日：2008-05-22

申请号：US11983260

申请日：2007-11-08

Applicant: Valery M. Dubin ,  Swaminathan Sivakumar ,  Andrew A. Berlin ,  Mark Bohr

Inventor： Valery M. Dubin ,  Swaminathan Sivakumar ,  Andrew A. Berlin ,  Mark Bohr

IPC: H01L29/788

CPC classification number: H01L21/76838 ,  B82Y10/00 ,  H01L21/76852 ,  H01L51/0021 ,  H01L51/0048 ,  H01L51/0052 ,  H01L2221/1094 ,  Y10S977/742 ,  Y10S977/936

Abstract: A nano-electrode or nano-wire may be etched centrally to form a gap between nano-electrode portions. The portions may ultimately constitute a single electron transistor. The source and drain formed from the electrode portions are self-aligned with one another. Using spacer technology, the gap between the electrodes may be made very small.

Abstract translation: 可以将纳米电极或纳米线中心蚀刻以形成纳米电极部分之间的间隙。 这些部分可以最终构成单个电子晶体管。 由电极部分形成的源极和漏极彼此自对准。 使用间隔技术，可以使电极之间的间隙非常小。

公开(公告)号：US20070184355A1

公开(公告)日：2007-08-09

申请号：US11351084

申请日：2006-02-09

Applicant: Charles Wallace ,  Swaminathan Sivakumar ,  Shannon Daviess

Inventor： Charles Wallace ,  Swaminathan Sivakumar ,  Shannon Daviess

IPC: G03C5/00 ,  G03F1/00

CPC classification number: G03F1/36

Abstract: Cross-shaped sub-resolution assist features may be utilized to print lithographic patterns in semiconductor fabrication processes. The crosses may be isolated structures or may be part of a grid arrangement. The main features, such as contacts, may be positioned on the mask so as to be intersected by the cross-shaped sub-resolution assist features. In some embodiments, the cross-shaped sub-resolution assist features may intersect the main feature at its center point in both the x and y directions.

Abstract translation: 在半导体制造工艺中可以使用十字形分解辅助特征来印刷平版印刷图案。 十字架可以是隔离结构，也可以是网格布置的一部分。 诸如触点的主要特征可以位于掩模上，以便与十字形分解辅助特征相交。 在一些实施例中，十字形辅助分辨率辅助特征可以在x和y方向的中心点处与主要特征相交。

公开(公告)号：US20050263899A1

公开(公告)日：2005-12-01

申请号：US11202462

申请日：2005-08-11

Applicant: Swaminathan Sivakumar ,  Curtis W. Ward ,  Timothy L. Hehr ,  Mark A. Fradkin

Inventor： Swaminathan Sivakumar ,  Curtis W. Ward ,  Timothy L. Hehr ,  Mark A. Fradkin

IPC: H01L21/033 ,  H01L21/302 ,  H01L21/311 ,  H01L21/461 ,  H01L21/768 ,  H01L23/04 ,  H01L23/485

CPC classification number: H01L21/76804 ,  H01L21/0335 ,  H01L21/31144 ,  H01L24/05 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The present invention relates to exposing a bond pad on a substrate. A bond pad is formed over a silicon substrate with the subsequent formation of a dielectric over the bond pad. A patterned resist is formed, and at least opening is processed to form a sloped sidewall profile. The sloped sidewall profile is subsequently etched and transferred to the dielectric layer, exposing the bond pad.

Abstract translation: 本发明涉及在衬底上暴露接合焊盘。 在硅衬底上形成接合焊盘，随后在接合焊盘上形成电介质。 形成图案化的抗蚀剂，并且至少打开处理以形成倾斜的侧壁轮廓。 随后蚀刻倾斜的侧壁轮廓并将其转移到电介质层，暴露接合焊盘。

公开(公告)号：US09625815B2

公开(公告)日：2017-04-18

申请号：US14039140

申请日：2013-09-27

Applicant: Paul A. Nyhus ,  Eungnak Han ,  Swaminathan Sivakumar ,  Ernisse S. Putna

Inventor： Paul A. Nyhus ,  Eungnak Han ,  Swaminathan Sivakumar ,  Ernisse S. Putna

IPC: H01L21/768 ,  H01L21/027 ,  G03F7/039 ,  H01L21/033 ,  H01L21/3105 ,  H01L21/32 ,  G03F7/00

CPC classification number: G03F7/0392 ,  B81C1/00428 ,  B81C2201/0149 ,  G03F7/0002 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/039 ,  G03F7/11 ,  G03F7/16 ,  G03F7/2004 ,  G03F7/2037 ,  G03F7/26 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/32 ,  H01L21/3205 ,  H01L21/32139 ,  H01L21/76816

Abstract: Self-aligned via and plug patterning for back end of line (BEOL) interconnects are described. In an example, a structure for directed self-assembly includes a substrate and a block co-polymer structure disposed above the substrate. The block co-polymer structure has a polystyrene (PS) component and a polymethyl methacrylate (PMMA) component. One of the PS component or the PMMA component is photosensitive.

公开(公告)号：US09558947B2

公开(公告)日：2017-01-31

申请号：US13976082

申请日：2011-12-29

Applicant: Charles H. Wallace ,  Hossam M. Abdallah ,  Elliot N. Tan ,  Swaminathan Sivakumar ,  Oleg Golonzka ,  Robert M. Bigwood

Inventor： Charles H. Wallace ,  Hossam M. Abdallah ,  Elliot N. Tan ,  Swaminathan Sivakumar ,  Oleg Golonzka ,  Robert M. Bigwood

IPC: H01L21/312 ,  H01L21/263 ,  H01L21/027 ,  G03F7/20 ,  H01L21/02 ,  H01L27/02 ,  G03F1/50 ,  G03F7/00 ,  G03F7/40

CPC classification number: H01L24/09 ,  G03F1/50 ,  G03F1/70 ,  G03F7/0035 ,  G03F7/16 ,  G03F7/40 ,  G03F7/70741 ,  H01L21/02345 ,  H01L21/0273 ,  H01L21/2633 ,  H01L21/30604 ,  H01L21/3086 ,  H01L27/0207 ,  H01L2224/0801 ,  H01L2224/08053 ,  H01L2224/0912 ,  H01L2924/14

Abstract: Techniques are disclosed for realizing a two-dimensional target lithography feature/pattern by decomposing (splitting) it into multiple unidirectional target features that, when aggregated, substantially (e.g., fully) represent the original target feature without leaving an unrepresented remainder (e.g., a whole-number quantity of unidirectional target features). The unidirectional target features may he arbitrarily grouped such that, within a grouping, all unidirectional target features share a common target width value. Where multiple such groupings are provided, individual groupings may or may not have the same common target width value. In some cases, a series of reticles is provided, each reticle having a mask pattern correlating to a grouping of unidirectional target features. Exposure of a photoresist material via the aggregated series of reticles substantially (e.g., fully) produces the original target feature/pattern. The pattern decomposition techniques may be integrated into any number of patterning processes, such as litho-freeze-litho-etch and litho-etch-litho-etch patterning processes.

Abstract translation: 公开了用于通过将其分解（分解）成多个单向目标特征来实现二维目标光刻特征/图案的技术，其在聚合时基本上（例如，完全）代表原始目标特征而不留下未表示的余数（例如， 全数量的单向目标特征）。 单向目标特征可以任意分组，使得在分组内，所有单向目标特征共享共同的目标宽度值。 在提供多个这样的分组的情况下，个体分组可以具有或可以不具有相同的共同目标宽度值。 在一些情况下，提供一系列光罩，每个掩模版具有与单向目标特征的分组相关的掩模图案。 基本上（例如，完全）通过聚集的标线系列曝光光致抗蚀剂材料产生原始目标特征/图案。 图案分解技术可以集成到任何数量的图案化工艺中，例如光刻冷冻 - 光刻蚀刻和光蚀刻 - 光蚀刻图案化工艺。

公开(公告)号：US09142421B2

公开(公告)日：2015-09-22

申请号：US13976090

申请日：2011-12-29

Applicant: Charles H. Wallace ,  Swaminathan Sivakumar ,  Matthew L. Tingey ,  Chanaka D. Munasinghe ,  Nadia M. Rahhal-Orabi

Inventor： Charles H. Wallace ,  Swaminathan Sivakumar ,  Matthew L. Tingey ,  Chanaka D. Munasinghe ,  Nadia M. Rahhal-Orabi

IPC: H01L21/469 ,  H01L21/308 ,  H01L21/033

CPC classification number: H01L21/3088 ,  H01L21/0337

Abstract: Techniques are disclosed for double patterning of a lithographic feature using a barrier layer between the pattern layers. In some cases, the techniques may be implemented with double patterning of a one- or two-dimensional photolithographic feature, for example. In some embodiments, the barrier layer is deposited to protect a first photoresist pattern prior to application of a second photoresist pattern thereon and/or to tailor (e.g., shrink) one or more of the critical dimensions of a trench, hole, or other etchable geometric feature to be formed in a substrate or other suitable surface via lithographic processes. In some embodiments, the techniques may be implemented to generate/print small features (e.g., less than or equal to about 100 nm) including one- and two-dimensional features/structures of varying complexity.

Abstract translation: 公开了使用图案层之间的阻挡层对光刻特征进行双重图案化的技术。 在一些情况下，例如，可以通过双图案化一维或二维光刻特征来实现这些技术。 在一些实施例中，沉积阻挡层以在施加第二光致抗蚀剂图案之前保护第一光致抗蚀剂图案和/或定制（例如，收缩）沟槽，孔或其它可蚀刻的一个或多个临界尺寸 通过光刻工艺在衬底或其它合适的表面中形成的几何特征。 在一些实施例中，可以实施技术来生成/打印包括不同复杂度的一维和二维特征/结构的小特征（例如，小于或等于约100nm）。

公开(公告)号：US20140117488A1

公开(公告)日：2014-05-01

申请号：US13976082

申请日：2011-12-29

Applicant: Charles H. Wallace ,  Hossam M. Abdallah ,  Elliot N. Tan ,  Swaminathan Sivakumar ,  Oleg Golonzka ,  Robert M. Bigwood

Inventor： Charles H. Wallace ,  Hossam M. Abdallah ,  Elliot N. Tan ,  Swaminathan Sivakumar ,  Oleg Golonzka ,  Robert M. Bigwood

IPC: H01L21/263 ,  H01L27/02 ,  H01L21/02 ,  G03F7/20

CPC classification number: H01L24/09 ,  G03F1/50 ,  G03F1/70 ,  G03F7/0035 ,  G03F7/16 ,  G03F7/40 ,  G03F7/70741 ,  H01L21/02345 ,  H01L21/0273 ,  H01L21/2633 ,  H01L21/30604 ,  H01L21/3086 ,  H01L27/0207 ,  H01L2224/0801 ,  H01L2224/08053 ,  H01L2224/0912 ,  H01L2924/14

Abstract: Techniques are disclosed for realizing a two-dimensional target lithography feature/pattern by decomposing (splitting) it into multiple unidirectional target features that, when aggregated, substantially (e.g., fully) represent the original target feature without leaving an unrepresented remainder (e.g., a whole-number quantity of unidirectional target features). The unidirectional target features may he arbitrarily grouped such that, within a grouping, all unidirectional target features share a common target width value. Where multiple such groupings are provided, individual groupings may or may not have the same common target width value. In some cases, a series of reticles is provided, each reticle having a mask pattern correlating to a grouping of unidirectional target features. Exposure of a photoresist material via the aggregated series of reticles substantially (e.g., fully) produces the original target feature/pattern. The pattern decomposition techniques may be integrated into any number of patterning processes, such as litho-freeze-litho-etch and litho-etch-litho-etch patterning processes.

Abstract translation: 公开了用于通过将其分解（分解）成多个单向目标特征来实现二维目标光刻特征/图案的技术，其在聚合时基本上（例如，完全）代表原始目标特征而不留下未表示的余数（例如， 全数量的单向目标特征）。 单向目标特征可以任意分组，使得在分组内，所有单向目标特征共享共同的目标宽度值。 在提供多个这样的分组的情况下，个体分组可以具有或可以不具有相同的共同目标宽度值。 在一些情况下，提供一系列光罩，每个掩模版具有与单向目标特征的分组相关的掩模图案。 基本上（例如，完全）通过聚集的标线系列曝光光致抗蚀剂材料产生原始目标特征/图案。 图案分解技术可以集成到任何数量的图案化工艺中，例如光刻冷冻 - 光刻蚀刻和光蚀刻 - 光蚀刻图案化工艺。

公开(公告)号：US20130234290A1

公开(公告)日：2013-09-12

申请号：US13868273

申请日：2013-04-23

Applicant: Steven Keating ,  Nick Lindert ,  Nadia Rahhal-Orabi ,  Brian Doyle ,  Satyarth Suri ,  Swaminathan Sivakumar ,  Lana Jong ,  Lin Sha

Inventor： Steven Keating ,  Nick Lindert ,  Nadia Rahhal-Orabi ,  Brian Doyle ,  Satyarth Suri ,  Swaminathan Sivakumar ,  Lana Jong ,  Lin Sha

IPC: H01L49/02

CPC classification number: H01L28/40 ,  H01G4/012 ,  H01G4/33 ,  H01L23/5223 ,  H01L27/10852 ,  H01L28/90 ,  H01L28/91 ,  H01L28/92 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of patterning a metal (141, 341, 841) on a vertical sidewall (132, 332, 832) of an excavated feature (130, 330, 830) includes placing a material (350) in the excavated feature such that a portion (435) of the metal is exposed in the excavated feature above the material, etching the exposed portion of the metal away from the vertical sidewall using a first wet etch chemistry, and removing the material from the excavated feature by etching it away using a second wet etch chemistry. The described method may be used to produce a MIM capacitor (800) suitable for an eDRAM device.

Abstract translation: 在挖掘特征（130,330,830）的垂直侧壁（132,332,832）上图案化金属（141,341,841）的方法包括将材料（350）放置在挖掘的特征中，使得部分 （435）暴露在材料上方的挖掘特征中，使用第一湿蚀刻化学法将金属的暴露部分从垂直侧壁上蚀刻出来，并且通过使用第二湿蚀刻化学法将其去除，从挖掘的特征中去除材料 湿蚀刻化学。 所描述的方法可以用于产生适合于eDRAM器件的MIM电容器（800）。

公开(公告)号：US20130216941A1

公开(公告)日：2013-08-22

申请号：US13846319

申请日：2013-03-18

Applicant: Shem O. Ogadhoh ,  Charles H. Wallace ,  Ryan Pearman ,  Sven Henrichs ,  Arvind Sundaramurthy ,  Swaminathan Sivakumar

Inventor： Shem O. Ogadhoh ,  Charles H. Wallace ,  Ryan Pearman ,  Sven Henrichs ,  Arvind Sundaramurthy ,  Swaminathan Sivakumar

IPC: G03F1/00

CPC classification number: G03F1/00 ,  G03F1/26 ,  G03F1/36

Abstract: Techniques are disclosed for using sub-resolution phased assist features (SPAF) in a lithography mask to improve through process pattern fidelity and/or mitigate inverted aerial image problems. The technique also may be used to improve image contrast in non-inverted weak image sites. The use of SPAF in accordance with some such embodiments requires no adjustment to existing design rules, although adjustments can be made to enable compliance with mask inspection constraints. The use of SPAF also does not require changing existing fab or manufacturing processes, especially if such processes already comprehend phased shift mask capabilities. The SPAFs can be used to enhance aerial image contrast, without the SPAFs themselves printing. In addition, the SPAF phase etch depth can be optimized so as to make adjustments to a given predicted printed feature critical dimension.

Abstract translation: 公开了在光刻掩模中使用子分辨率相控辅助特征（SPAF）来改进过程模式保真度和/或减轻倒置的空中图像问题的技术。 该技术也可用于改善非反转弱图像位置中的图像对比度。 根据一些这样的实施例的SPAF的使用不需要调整现有的设计规则，尽管可以进行调整以使得能够符合掩模检查约束。 使用SPAF也不需要更改现有的晶圆厂或制造工艺，特别是如果这些工艺已经了解了相位移位掩模功能。 SPAF可以用于增强空中图像对比度，而不需要SPAF自身的打印。 此外，可以优化SPAF相蚀刻深度，以便对给定的预测印刷特征临界尺寸进行调整。

公开(公告)号：US08441057B2

公开(公告)日：2013-05-14

申请号：US13028400

申请日：2011-02-16

Applicant: Steven J. Keating ,  Nick Lindert ,  Nadia Rahhal-Orabi ,  Brian Doyle ,  Satyarth Suri ,  Swaminathan Sivakumar ,  Lana Jong ,  Lin Sha

Inventor： Steven J. Keating ,  Nick Lindert ,  Nadia Rahhal-Orabi ,  Brian Doyle ,  Satyarth Suri ,  Swaminathan Sivakumar ,  Lana Jong ,  Lin Sha

IPC: H01L29/92

CPC classification number: H01L28/40 ,  H01G4/012 ,  H01G4/33 ,  H01L23/5223 ,  H01L27/10852 ,  H01L28/90 ,  H01L28/91 ,  H01L28/92 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of patterning a metal (141, 341, 841) on a vertical sidewall (132, 332, 832) of an excavated feature (130, 330, 830) includes placing a material (350) in the excavated feature such that a portion (435) of the metal is exposed in the excavated feature above the material, etching the exposed portion of the metal away from the vertical sidewall using a first wet etch chemistry, and removing the material from the excavated feature by etching it away using a second wet etch chemistry. The described method may be used to produce a MIM capacitor (800) suitable for an eDRAM device.