公开(公告)号：US08866149B2

公开(公告)日：2014-10-21

申请号：US13767739

申请日：2013-02-14

Applicant: The Regents of the University of California

Inventor： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L29/15 ,  H01L21/02 ,  H01S5/183 ,  H01S5/02 ,  H01L29/20 ,  H01L21/78 ,  H01L21/3063 ,  H01S5/343 ,  H01S5/20

CPC classification number: H01L21/7813 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/30612 ,  H01L21/30635 ,  H01L29/2003 ,  H01L31/03044 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/32 ,  H01S5/0217 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18347 ,  H01S5/187 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

Abstract translation: 氮化镓（GaN）外延衬底的再利用方法使用带隙选择性光电化学（PEC）蚀刻从体积或独立的GaN衬底去除一个或多个外延层而不损坏衬底，允许衬底被再次使用 用于进一步生长附加的外延层。 该方法通过允许重新使用昂贵的体积或独立的GaN衬底而有助于器件生产的显着降低成本。

公开(公告)号：US08835959B2

公开(公告)日：2014-09-16

申请号：US13622884

申请日：2012-09-19

Applicant: The Regents of the University of California

Inventor： Shuji Nakamura ,  Steven P. DenBaars ,  Hirokuni Asamizu

IPC: H01L33/00

CPC classification number: H01L33/62 ,  G02B19/0028 ,  G02B19/0061 ,  H01L33/22 ,  H01L33/387 ,  H01L33/54 ,  H01L33/58 ,  H01L33/60 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16245 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/1815 ,  H01L2933/0091 ,  H01L2224/48091 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract translation: 透明发光二极管（LED）包括多个III族氮化物层，包括发射光的有源区，除了有源区以外的所有层对于光的发射波长是透明的，使得光是 通过所有层有效提取，并在多个方向通过层提取。 此外，一个或多个III族氮化物层的表面可以被粗糙化，纹理化，图案化或成形以增强光提取。

公开(公告)号：US20140151634A1

公开(公告)日：2014-06-05

申请号：US14174581

申请日：2014-02-06

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Shuji Nakamura ,  Steven P. DenBaars ,  Shinichi Tanaka ,  Daniel F. Feezell ,  Yuji Zhao ,  Chih-Chien Pan

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0062 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32

Abstract: A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device.

Abstract translation: 通过金属有机化学气相沉积（MOCVD）在氮化镓（GaN）半极性衬底上生长的（Al，Ga，In）N薄膜的发光二极管结构，其呈现减小的下垂。 该器件结构包括两个或多个周期的量子阱（QW）有源区，位于QW有源区下面的n型超晶格层（n-SL）以及QW有源区以上的p型超晶格层（p-SL） 地区。 本发明还包括制造这种装置的方法。

公开(公告)号：US20140126200A1

公开(公告)日：2014-05-08

申请号：US14066012

申请日：2013-10-29

Applicant: The Regents of the University of California

Inventor： Kathryn M. Kelchner ,  James S. Speck ,  Nathan A. Pfaff ,  Steven P. DenBaars

IPC: F21K99/00

CPC classification number: F21K9/64 ,  F21K9/90

Abstract: A white light source employing a III-nitride based laser diode pumping one or more phosphors. The III-nitride laser diode emits light in a first wavelength range that is down-converted to light in a second wavelength range by the phosphors, wherein the light in the first wavelength range is combined with the light in the second wavelength range to create highly directional white light. The light in the first wavelength range comprises ultraviolet, violet, blue and/or green light, while the light in the second wavelength range comprises green, yellow and/or red light.

Abstract translation: 采用驱动一种或多种磷光体的III族氮化物基激光二极管的白光源。 III族氮化物激光二极管发射第一波长范围的光，该第一波长范围通过磷光体下转换成第二波长范围内的光，其中第一波长范围内的光与第二波长范围内的光组合以产生高度 定向白光。 第一波长范围内的光包括紫外线，紫色，蓝色和/或绿色光，而第二波长范围内的光包括绿色，黄色和/或红色光。

公开(公告)号：US20140023102A1

公开(公告)日：2014-01-23

申请号：US13947755

申请日：2013-07-22

Applicant: The Regents of the University of California

Inventor： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01S5/10 ,  H01S5/183

CPC classification number: H01S5/18355 ,  B82Y20/00 ,  H01S5/005 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/0654 ,  H01S5/1039 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/2009 ,  H01S5/209 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/423 ,  H01S2301/176

Abstract: A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.

Abstract translation: 基于III-Nitride的垂直腔表面发射激光器（VCSEL），其中通过蚀刻来控制VCSEL的腔长度。

公开(公告)号：US20130259080A1

公开(公告)日：2013-10-03

申请号：US13904908

申请日：2013-05-29

Applicant: The Regents of the University of California

Inventor： Hiroaki Ohta ,  Feng Wu ,  Anurag Tyagi ,  Arpan Chakraborty ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura ,  Erin C. Young

IPC: H01L33/12 ,  H01S5/34 ,  H01S5/32

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01S5/2201 ,  H01S5/32 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/3425 ,  H01S2301/173

Abstract: An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.

Abstract translation: 用于基于III-Nitride的光学器件的外延结构，其包括在下层上具有各向异性应变的活性层，其中由于存在失配而使底层中的晶格常数和应变在至少一个方向上部分或完全松弛 位错，使得有源层中的各向异性应变被下层调制。

公开(公告)号：US20130099202A1

公开(公告)日：2013-04-25

申请号：US13659125

申请日：2012-10-24

Applicant: The Regents of the University of California

Inventor： Matthew T. Hardy ,  Shuji Nakamura ,  Steven P. DenBaars ,  James Stephen Speck

IPC: H01L29/15 ,  H01L21/20

CPC classification number: H01L21/02389 ,  B82Y20/00 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02587 ,  H01L21/02609 ,  H01L21/02658 ,  H01L29/2003 ,  H01S5/0014 ,  H01S5/22 ,  H01S5/34333 ,  H01S2304/12

Abstract: An (AlInGaN) based semiconductor device, including one or more (In,Al)GaN layers overlying a semi-polar or non-polar III-nitride substrate or buffer layer, wherein the substrate or buffer employs patterning to influence or control extended defect morphology in layers deposited on the substrate; and one or more (AlInGaN) device layers above and/or below the (In,Al)GaN layers.

Abstract translation: 一种（AlInGaN）半导体器件，包括覆盖半极性或非极性III族氮化物衬底或缓冲层的一个或多个（In，Al）GaN层，其中衬底或缓冲器采用图案化来影响或控制扩展缺陷形态 沉积在基底上的层; 和（In，Al）GaN层之上和/或之下的一个或多个（AlInGaN）器件层。

公开(公告)号：US20240413610A1

公开(公告)日：2024-12-12

申请号：US18699439

申请日：2022-10-24

Applicant: The Regents of the University of California

Inventor： Srinivas Gandrothula ,  Shuji Nakamura ,  Steven P. DenBaars

IPC: H01S5/183 ,  H01S5/02 ,  H01S5/30

Abstract: Methods for fabricating a vertical cavity surface emitting laser (VCSEL) using epitaxial lateral overgrowth (ELO). The ELO layers comprise island-like III-nitride semiconductor layers grown on a substrate using a growth restrict mask, wherein the island-like III-nitride semiconductor layers comprise a light emitting resonant cavity. An aperture for the resonant cavity is fabricated on a wing of the ELO layers with distributed Bragg reflector (DBR) mirrors formed on bottom and top regions of the wing of the ELO layers.

公开(公告)号：US20240405158A1

公开(公告)日：2024-12-05

申请号：US18701367

申请日：2022-10-28

Applicant: The Regents of the University of California

Inventor： Srinivas Gandrothula ,  Shuji Nakamura ,  Steven P. DenBaars

IPC: H01L33/10 ,  H01L33/00 ,  H01L33/22

Abstract: A method for fabricating epitaxial light control features, without reactive ion etching or wet etching, when active layers are included. The epitaxial light control features comprise light extraction or guiding structures integrated on an epitaxial layer of a light emitting device such as a light emitting diode. The light extraction or guiding structures are fabricated on the epitaxial layer using an epitaxial lateral overgrowth (ELO) technique. The epitaxial light control features can have many different shapes and can be fabricated with standard processing techniques, making them highly manufacturable at costs similar to standard processing techniques.

公开(公告)号：US20230420617A1

公开(公告)日：2023-12-28

申请号：US18248817

申请日：2021-10-29

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Michael Iza ,  Matthew S. Wong ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/42

CPC classification number: H01L33/42 ,  H01L33/32

Abstract: A nitride-based ultraviolet light emitting diode (UVLED) with an ultraviolet transparent contact (UVTC). The nitride-based UVLED is an alloy composition of (Ga, Al, In, B)N semiconductors, and the UVTC is composed of an oxide with a bandgap larger than that emitted in an active region of the nitride-based UVLED, wherein the oxide is an alloy composition of (Ga, Al, In, B, Mg, Fe, Si, Sn)O semiconductors, such as Ga2O3.