公开(公告)号：US20160327869A1

公开(公告)日：2016-11-10

申请号：US15109917

申请日：2015-01-13

申请人： TOKYO ELECTRON LIMITED

发明人： Seiji NAGAHARA ,  Gousuke SHIRAISHI ,  Satoru SHIMURA ,  Kousuke YOSHIHARA ,  Shinichiro KAWAKAMI ,  Masaru TOMONO ,  Yuichi TERASHITA ,  Hironori MIZOGUCHI

IPC分类号： G03F7/20

CPC分类号： G03F7/7055 ,  G03F7/2022 ,  G03F7/70558

摘要： A technique which, in forming a resist pattern on a wafer, can achieve high resolution and high in-plane uniformity of pattern line width. After forming a resist film on a wafer W and subsequently performing pattern exposure by means of a pattern exposure apparatus, the entire pattern exposure area is exposed by using a flood exposure apparatus. During the flood exposure, the exposure amount is adjusted depending on the exposure position on the wafer based on information on the in-plane distribution of the line width of a resist pattern, previously obtained from an inspection apparatus. Methods for adjusting the exposure amount include a method which adjusts the exposure amount while moving a strip-shaped irradiation area corresponding to the diameter of the wafer, a method which involves intermittently moving an irradiation area, corresponding to a shot area in the preceding pattern exposure, to adjust the exposure amount for each chip.

摘要翻译： 在晶片上形成抗蚀剂图案的技术可以实现图案线宽度的高分辨率和高平面均匀性。 在晶片W上形成抗蚀剂膜，然后通过图案曝光装置进行图案曝光，通过使用淹光曝光装置曝光整个图案曝光区域。 在曝光期间，根据先前从检查装置获得的抗蚀剂图案的线宽的面内分布的信息，根据晶片上的曝光位置来调节曝光量。 用于调节曝光量的方法包括在移动对应于晶片直径的条形照射区域的同时调节曝光量的方法，涉及间歇地移动照射区域的方法，对应于先前图案曝光中的照射区域 ，调整每个芯片的曝光量。

公开(公告)号：US20160320706A1

公开(公告)日：2016-11-03

申请号：US15189311

申请日：2016-06-22

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Chin-Hsiung HSU ,  Huang-Yu CHEN ,  Tsong-Hua OU ,  Wen-Hao CHEN

IPC分类号： G03F7/20 ,  G06F17/50 ,  G03F1/70 ,  H01L21/3213

CPC分类号： G03F7/2022 ,  G03F1/70 ,  G06F17/5068 ,  H01L21/3213 ,  H05K3/0005 ,  H05K3/0082 ,  H05K3/06 ,  H05K3/068 ,  H05K2201/09781 ,  H05K2203/0557 ,  H05K2203/1476 ,  Y10T29/49156

摘要： A method includes patterning a layer over a substrate with a first metal pattern; using a cut mask in a first position relative to the substrate to perform a first cut patterning for removing material from a first region within the first pattern; and using the same cut mask to perform a second cut patterning while in a second position relative to the same layer over the substrate, for removing material from a second region in a second metal pattern of the same layer over the substrate.

摘要翻译： 一种方法包括用第一金属图案在衬底上图案化层; 在相对于所述基板的第一位置使用切割掩模，以执行用于从所述第一图案内的第一区域去除材料的第一切割图案; 并且使用相同的切割掩模在相对于衬底上的相同层的第二位置执行第二切割图案，用于从衬底上的相同层的第二金属图案中的第二区域去除材料。

公开(公告)号：US09482953B2

公开(公告)日：2016-11-01

申请号：US14177278

申请日：2014-02-11

申请人： Samsung Electronics Co., Ltd.

发明人： Cha-Won Koh ,  Jeon-Il Lee ,  Su-Min Kim ,  Hyun-Woo Kim ,  Jin Park

IPC分类号： G03B27/68 ,  G03F7/20 ,  G03F7/00

CPC分类号： G03F7/2022 ,  G03F7/0002

摘要： A lithography apparatus and a method of using the same, the apparatus including a stage for accommodating a substrate that has a photoresist film thereon; a main unit on the stage, the main unit being configured to irradiate a projection beam to the photoresist film; and an electric field unit adjacent to the stage, the electric field unit being configured to apply an electric field to the photoresist film, wherein the electric field unit is configured to be turned on at a same time as or before irradiation of the projection beam, and is configured to be turned off at a same time as or after termination of the projection beam.

摘要翻译： 一种光刻设备及其使用方法，该设备包括：用于容纳其上具有光致抗蚀剂膜的基板的台; 主体单元，被配置为向光致抗蚀剂膜照射投影光束; 以及与所述载物台相邻的电场单元，所述电场单元被配置为向所述光致抗蚀剂膜施加电场，其中所述电场单元被配置为在所述投影束的照射之前或之前被接通， 并且被配置为在投影光束的终止之后的同时或者在其终止之后被关闭。

公开(公告)号：US09436098B2

公开(公告)日：2016-09-06

申请号：US14635339

申请日：2015-03-02

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Jung-Chul Heo ,  Hi-Kuk Lee ,  Jae-Hyuk Chang ,  Sang-Hyun Lee ,  Jung-In Park ,  Sang-Hyun Yun ,  Ki-Beom Lee ,  Hyun-Seok Kim ,  Kab-Jong Seo ,  Jun-Ho Sim ,  Byoung-Min Yun ,  Sang-Don Jang ,  Jae-Young Jang ,  Chang-Hoon Kim

IPC分类号： G03F7/20 ,  H01L29/786 ,  H01L27/12

CPC分类号： G03F7/70508 ,  G03F7/2022 ,  G03F7/2051 ,  G03F7/702 ,  G03F7/70291 ,  G03F7/70391 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/78669 ,  H01L29/78693 ,  H01L29/78696

摘要： A maskless exposure device includes an exposure head including a digital micro-mirror device. The digital micro-mirror device is configured to transmit a source beam applied from an exposure source to a substrate. A system control part is configured to control the digital micro-mirror device by using a graphic data system file. The graphic data system file includes data for forming a source electrode, a drain electrode and a channel portion disposed between the source electrode and the drain electrode. The graphic system file includes data for forming the channel portion extending in a diagonal direction with respect to a scan direction of the exposure head.

摘要翻译： 无掩模曝光装置包括具有数字微镜装置的曝光头。 数字微镜装置被配置为将从曝光源施加的源光束传输到衬底。 系统控制部分被配置为通过使用图形数据系统文件来控制数字微镜装置。 图形数据系统文件包括用于形成源电极，漏电极和设置在源电极和漏电极之间的沟道部分的数据。 图形系统文件包括用于形成相对于曝光头的扫描方向沿对角线方向延伸的通道部分的数据。

公开(公告)号：US20160246187A1

公开(公告)日：2016-08-25

申请号：US15015254

申请日：2016-02-04

申请人： Tokyo Electron Limited

发明人： Hiroshi TOMITA

IPC分类号： G03F7/20

CPC分类号： G03F7/2028 ,  G03F7/2022

摘要： An edge exposure apparatus includes: an imaging unit that images a front surface of a substrate; a substrate holding unit; an exposure unit that exposes an edge portion of the substrate held on the substrate holding unit; a first moving mechanism that moves and rotates the substrate holding unit; a second moving mechanism that moves the exposure unit; and a control unit that controls the first moving mechanism and the second moving mechanism, wherein the first moving mechanism and the second moving mechanism are controlled so as to acquire array information of shots of a pattern on the substrate from a substrate image of a substrate, which has already been subjected to pattern exposure, imaged by the imaging unit, and expose the edge portion of the substrate, based on the acquired array information.

摘要翻译： 边缘曝光装置包括：成像单元，其对基板的前表面进行成像; 基板保持单元; 曝光单元，其暴露保持在所述基板保持单元上的所述基板的边缘部分; 移动和旋转衬底保持单元的第一移动机构; 移动曝光单元的第二移动机构; 以及控制单元，其控制第一移动机构和第二移动机构，其中，控制第一移动机构和第二移动机构，以从基板的基板图像获取基板上的图案的拍摄的阵列信息， 已经经过图案曝光，由成像单元成像，并且基于获取的阵列信息曝光基板的边缘部分。

公开(公告)号：US09412728B2

公开(公告)日：2016-08-09

申请号：US14418842

申请日：2013-07-19

申请人： ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)

发明人： Carlotta Guiducci ,  Yusuf Leblebici ,  Yuksel Temiz

IPC分类号： H01L21/00 ,  H01L25/00 ,  H01L21/768 ,  H01L23/00 ,  G03F7/20 ,  G03F7/32

CPC分类号： H01L25/50 ,  G03F7/2022 ,  G03F7/32 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/3185 ,  H01L24/02 ,  H01L24/05 ,  H01L24/24 ,  H01L24/27 ,  H01L24/32 ,  H01L24/73 ,  H01L24/82 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L2221/68381 ,  H01L2224/02313 ,  H01L2224/0239 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/24011 ,  H01L2224/24051 ,  H01L2224/24146 ,  H01L2224/27002 ,  H01L2224/32145 ,  H01L2224/73267 ,  H01L2224/82002 ,  H01L2224/82005 ,  H01L2224/8201 ,  H01L2224/82101 ,  H01L2224/82106 ,  H01L2224/82143 ,  H01L2224/83143 ,  H01L2224/83203 ,  H01L2224/8385 ,  H01L2224/9202 ,  H01L2224/9205 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/00013 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00

摘要： A method for performing a post processing pattern on a diced chip having a footprint, comprises the steps of providing a support wafer; applying a first dry film photoresist to the support wafer; positioning a mask corresponding to the footprint of the diced chip on the first dry film photoresist; expose the mask and the first dry film photoresist to UV radiation; remove the mask; photoresist develop the exposed first dry film photoresist to obtain a cavity corresponding to the diced chip; positioning the diced chip inside the cavity; applying a second dry film photoresist to the first film photoresist and the diced chip; and expose and develop the second dry film photoresist applied to the diced chip in accordance with the post processing pattern.

摘要翻译： 一种用于在具有覆盖区的切割芯片上执行后处理图案的方法，包括以下步骤：提供支撑晶片; 将第一干膜光致抗蚀剂施加到所述支撑晶片; 将对应于切割的芯片的覆盖区的掩模定位在第一干膜光致抗蚀剂上; 将掩模和第一干膜光致抗蚀剂暴露于UV辐射; 取下面具; 光致抗蚀剂显影曝光的第一干膜光致抗蚀剂以获得与切割芯片相对应的空腔; 将切割的芯片定位在腔内; 将第二干膜光致抗蚀剂施加到第一膜光致抗蚀剂和切割的芯片上; 并且根据后处理图案曝光和显影施加到切割的芯片上的第二干膜光致抗蚀剂。

公开(公告)号：US20160207299A1

公开(公告)日：2016-07-21

申请号：US15024650

申请日：2014-09-30

申请人： FLINT GROUP GERMANY GMBH

发明人： UWE STEBANI ,  Gernot DIETZ

IPC分类号： B41C1/055

CPC分类号： B41C1/055 ,  G03F7/201 ,  G03F7/202 ,  G03F7/2022 ,  G03F7/36

摘要： A device for automated implementation of preliminary reverse exposure, main exposure, and development of digitally imagable flexographic printing elements, and a method for producing flexographic printing plates starting from digitally imaged flexographic printing elements, using said apparatus.

摘要翻译： 用于自动实施初步反向曝光，主要曝光和数字成像柔版印刷元件的开发的装置，以及使用所述装置从数字成像的柔版印刷元件开始制造柔版印刷版的方法。

公开(公告)号：US20160154310A1

公开(公告)日：2016-06-02

申请号：US15017882

申请日：2016-02-08

申请人： Western Digital (Fremont), LLC

发明人： HONGPING YUAN ,  HAI SUN ,  XIANZHONG ZENG ,  WINNIE YU

IPC分类号： G03F7/20

CPC分类号： G03F7/2022 ,  G03F7/70466 ,  H01L21/0274

摘要： A method and system provide microelectric devices on fields on a substrate. Each field includes at least one microelectric device having a critical device feature and remaining device feature(s) distal from the critical device feature. The method and system include providing a photoresist layer for fabricating the microelectric devices and exposing the photoresist layer using a dark field mask. The dark field mask is for defining a critical mask feature corresponding to the critical device feature and exposing a first portion of the fields. The first portion includes not more than five percent of each field. The method and system further include exposing the photoresist layer using a clear field mask. The clear field mask is for defining remaining mask feature(s) corresponding to the remaining device feature(s). The clear field mask exposes a second portion of the fields that is different from the first portion.

摘要翻译： 一种方法和系统在衬底上的场上提供微电子器件。 每个场包括至少一个具有关键装置特征的微电子装置和远离关键装置特征的剩余装置特征。 所述方法和系统包括提供用于制造微电子器件的光致抗蚀剂层并且使用暗场掩模曝光光致抗蚀剂层。 暗场掩模用于定义与关键设备特征对应的关键掩模特征并暴露场的第一部分。 第一部分不超过每个领域的百分之五。 该方法和系统还包括使用清晰的场屏蔽来曝光光致抗蚀剂层。 清除场掩模用于定义对应于剩余设备特征的剩余掩模特征。 清除场掩模曝光与第一部分不同的场的第二部分。

公开(公告)号：US20160153624A1

公开(公告)日：2016-06-02

申请号：US14953740

申请日：2015-11-30

申请人： USHIO DENKI KABUSHIKI KAISHA

发明人： Daisuke YAJIMA ,  Kazuyuki TSURUOKA

IPC分类号： F21K99/00 ,  F21V9/16

CPC分类号： F21V9/30 ,  F21K9/64 ,  F21Y2101/00 ,  F21Y2115/30 ,  G02B5/008 ,  G03F7/0005 ,  G03F7/201 ,  G03F7/2022 ,  G03F7/70408

摘要： A method manufactures a light emitting element of a fluorescent light source. The method includes forming a photosensitive material layer on a fluorescent substrate, and dividing a coherent beam into branch beams. The method includes causing the branch beams to cross each other thereby generating a first interference beam, and applying an exposure process to the photosensitive material layer with the first interference beam. The method includes producing a second interference beam, and applying the exposure process to the photosensitive material with the second interference beam. The method includes removing those areas of the photosensitive material layer which are irradiated with the first and second interference beams, thereby forming a fine pattern in the photosensitive material layer. The method includes applying an etching process to the fluorescent substrate with the fine pattern of the photosensitive material layer, thereby creating a photonic structure on the fluorescent substrate.

摘要翻译： 一种制造荧光光源的发光元件的方法。 该方法包括在荧光基板上形成感光材料层，并将相干光束分成分支光束。 该方法包括使分支光束彼此交叉从而产生第一干涉光束，并且利用第一干涉光束对感光材料层施加曝光处理。 该方法包括产生第二干涉光束，以及用第二干涉光束将感光材料施加到曝光处理。 该方法包括去除用第一和第二干涉光束照射的感光材料层的那些区域，从而在感光材料层中形成精细图案。 该方法包括用感光材料层的精细图案向荧光基板施加蚀刻工艺，从而在荧光基板上产生光子结构。

公开(公告)号：US20160124318A1

公开(公告)日：2016-05-05

申请号：US14927605

申请日：2015-10-30

申请人： CANON KABUSHIKI KAISHA

发明人： Nobuhiko Yabu

IPC分类号： G03F7/20 ,  G03F7/32

CPC分类号： G03F7/2022 ,  G03F7/70091 ,  G03F7/70483 ,  G03F7/706

摘要： This exposure method comprises a first step of performing the exposure processing by irradiating a projection optical system (the system) by a first pupil plane illumination distribution (the first distribution) of the system; a second step of performing the exposure processing by irradiating the system by a second pupil plane illumination distribution (the second distribution) that is different from the first distribution, after the first step; a change amount obtaining step of obtaining a change amount of an imaging performance of the system in a condition of the second distribution, with respect to the imaging performance in the first step; and a correction amount obtaining step of obtaining a correction amount for correcting the imaging performance in the second step, by using the change amount, wherein, in the second step, the exposure processing is performed by correcting the imaging performance using the correction amount.

摘要翻译： 该曝光方法包括：通过以系统的第一光瞳平面照射分布（第一分布）照射投影光学系统（该系统）来进行曝光处理的第一步骤; 第二步骤，通过在第一步骤之后通过与第一分布不同的第二光瞳平面照明分布（第二分布）照射系统来进行曝光处理; 相对于第一步骤中的成像性能，获得在第二分配条件下获得系统的成像性能的变化量的变化量获取步骤; 以及校正量获取步骤，通过使用所述改变量来获得用于校正第二步骤中的成像性能的校正量，其中在第二步骤中，通过使用校正量校正成像性能来执行曝光处理。