公开(公告)号：US09142384B2

公开(公告)日：2015-09-22

申请号：US14302024

申请日：2014-06-11

申请人： FEI Company

发明人： Rudolf Johannes Peter Gerardus Schampers ,  Johannes Antonius Hendricus Wilhelmus Gerardus Persoon ,  Andreas Theodorus Engelen

IPC分类号： H01J37/20 ,  H01J37/26 ,  G01N1/28 ,  G01N1/42 ,  G02B21/32 ,  H01J37/315

CPC分类号： H01J37/20 ,  G01N1/28 ,  G01N1/42 ,  G02B21/32 ,  H01J37/26 ,  H01J37/315 ,  H01J2237/002 ,  H01J2237/2065 ,  H01J2237/31744 ,  H01J2237/31745

摘要： The invention relates to a method of welding a vitreous biological sample at a temperature below the glass transition temperature of approximately −137° C. to a micromanipulator, also kept at a temperature below the glass transition temperature. Where prior art methods used IBID with, for example, propane, or a heated needle (heated resistively or by e/g/laser), the invention uses a vibrating needle to locally melt the sample. By stopping the vibration, the sample freezes to the micromanipulator. The heat capacity of the heated parts is small, and the amount of material that stays in a vitreous condition thus large.

摘要翻译： 本发明涉及一种将玻璃态生物样品在低于大约-137℃的玻璃化转变温度的温度下焊接到也保持在低于玻璃化转变温度的温度下的显微操纵器的方法。 当现有技术方法使用IBID与例如丙烷或加热针（电阻加热或e / g /激光）时，本发明使用振动针来局部熔化样品。 通过停止振动，样品冻结到显微操纵器。 加热部件的热容量小，因此玻璃状态的材料的量变大。

公开(公告)号：US09064811B2

公开(公告)日：2015-06-23

申请号：US13910761

申请日：2013-06-05

申请人： FEI Company

发明人： Chad Rue ,  Clive D. Chandler

IPC分类号： B44C1/22 ,  H01L21/461 ,  H01L21/302 ,  C23C14/32 ,  H01L21/3065 ,  H01J37/305 ,  H01L21/3213 ,  H01L21/67

CPC分类号： H01L21/67069 ,  H01J37/3056 ,  H01J37/3233 ,  H01J37/3244 ,  H01J2237/3151 ,  H01J2237/31744 ,  H01J2237/31749 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/32131 ,  H01L21/32136 ,  H01L21/76892

摘要： A method and system for improved planar deprocessing of semiconductor devices using a focused ion beam system. The method comprises defining a target area to be removed, the target area including at least a portion of a mixed copper and dielectric layer of a semiconductor device; directing a precursor gas toward the target area; and directing a focused ion beam toward the target area in the presence of the precursor gas, thereby removing at least a portion of a first mixed copper and dielectric layer and producing a uniformly smooth floor in the milled target area. The precursor gas causes the focused ion beam to mill the copper at substantially the same rate as the dielectric. In a preferred embodiment, the precursor gas comprises methyl nitroacetate. In alternative embodiments, the precursor gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

摘要翻译： 一种用于使用聚焦离子束系统改进半导体器件的平面去除处理的方法和系统。 该方法包括限定要去除的目标区域，所述目标区域包括半导体器件的混合铜和电介质层的至少一部分; 将前体气体引向目标区域; 并且在存在前体气体的情况下将聚焦离子束引向目标区域，从而去除第一混合铜和电介质层的至少一部分，并在研磨的目标区域中产生均匀光滑的地板。 前体气体导致聚焦离子束以与电介质基本相同的速率研磨铜。 在优选的实施方案中，前体气体包括硝基乙酸甲酯。 在替代实施方案中，前体气体是乙酸甲酯，乙酸乙酯，硝基乙酸乙酯，乙酸丙酯，硝基乙酸丙酯，硝基乙酸乙酯，甲氧基乙酸甲酯或甲氧基乙酰氯。

公开(公告)号：US20150114294A1

公开(公告)日：2015-04-30

申请号：US14590952

申请日：2015-01-06

申请人： Carl Zeiss Microscopy GmbH

发明人： Emmerich Bertagnolli ,  Heinz Wanzenboeck ,  Wolfram Buehler ,  Camille Stebler ,  Ulrike Zeile ,  Alexander Rosenthal

IPC分类号： H01J37/317 ,  H01J37/20 ,  C23C16/48 ,  H01J37/26

CPC分类号： H01J37/3178 ,  C23C16/486 ,  C23C16/487 ,  H01J37/16 ,  H01J37/20 ,  H01J37/261 ,  H01J37/30 ,  H01J37/3056 ,  H01J2237/188 ,  H01J2237/2002 ,  H01J2237/2602 ,  H01J2237/303 ,  H01J2237/31744

摘要： A processing system for processing an object (3) is provided, wherein the processing system is adapted, to focus a first energy beam, in particular an electron beam (11), and a second energy beam, in particular an ion beam (21), on a focusing region (29) in which a object (3) to be processed is arrangeable. A processing chamber wall (35) having two openings (38, 39) for traversal of both energy beams and a connector (37) for supplying process gas delimits a processing chamber (45) from a vacuum chamber (2) of the processing system. Processing the object by activating the process gas through one of the energy beams and inspecting the object via one of the energy beams is enabled for different orientations of the object relative to a propagation direction of one of the energy beams.

摘要翻译： 提供了一种用于处理物体（3）的处理系统，其中处理系统适于聚焦第一能量束，特别是电子束（11）和第二能量束，特别是离子束（21） 在可以配置被处理物体（3）的聚焦区域（29）上。 具有用于穿过能量束的两个开口（38,39）和用于供给处理气体的连接器（37））的处理室壁（35）从处理系统的真空室（2）界定处理室（45）。 通过激活能量束中的一个能量束并通过其中一个能量束检查物体来处理物体，能够使物体相对于能量束之一的传播方向的不同取向。

公开(公告)号：US08278220B2

公开(公告)日：2012-10-02

申请号：US12210781

申请日：2008-09-15

申请人： Theresa Holtermann ,  Anthony Graupera ,  Michael Dibattista

发明人： Theresa Holtermann ,  Anthony Graupera ,  Michael Dibattista

IPC分类号： H01L21/311

CPC分类号： H01J37/3056 ,  H01J37/317 ,  H01J37/3178 ,  H01J2237/006 ,  H01J2237/31713 ,  H01J2237/31732 ,  H01J2237/31737 ,  H01J2237/31744 ,  H01J2237/31745 ,  H01J2237/31749 ,  H01L21/2885 ,  H01L21/76898 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： A microscopic metallic structure is produced by creating or exposing a patterned region of increased conductivity and then forming a conductor on the region using electrodeposition. In some embodiments, a microscopic metallic structure is formed on a substrate, and then the substrate is etched to remove the structure from the substrate. In some embodiments, a focused beam of gallium ion without a deposition precursor gas scans a pattern on a silicon substrate, to produce a conductive pattern on which a copper structure is then formed by electrochemical deposition of one or more metals. The structure can be freed from the substrate by etching, or can used in place. A beam can be used to access an active layer of a transistor, and then a conductor can be electrodeposited to provide a lead for sensing or modifying the transistor operation while it is functioning.

摘要翻译： 通过产生或暴露具有增加的导电性的图案化区域，然后使用电沉积在该区域上形成导体来产生微观金属结构。 在一些实施例中，在衬底上形成微观金属结构，然后蚀刻衬底以从衬底去除结构。 在一些实施例中，没有沉积前体气体的聚焦聚焦的镓离子束扫描硅衬底上的图案，以产生导电图案，然后通过电化学沉积一种或多种金属形成铜结构。 该结构可以通过蚀刻从衬底中脱离，或者可以在适当的位置使用。 可以使用光束来访问晶体管的有源层，然后可以将导体电沉积以提供用于在其工作时感测或修改晶体管操作的引线。

公开(公告)号：US08008207B2

公开(公告)日：2011-08-30

申请号：US11752829

申请日：2007-05-23

申请人： Ming Lun Yu ,  Mehran Nasser-Ghodsi

发明人： Ming Lun Yu ,  Mehran Nasser-Ghodsi

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： G03F7/2043 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/31744 ,  H01L21/02057 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32136

摘要： A method for controlling chemical dry etching to improve smoothness of an etched surface is disclosed. Ions are implanted into a surface to form a volatilizable compound at a temperature low enough to avoid, reduce, or eliminate formation of three-dimensional structures of the volatilizable compound that might create the roughness at an etched surface of the volatilizable compound. The ions are applied in a sufficient energy to penetrate to a predetermined depth of material that is to be removed from the surface in an etching cycle, and in a sufficient dosage to achieve full formation of the volatilizable compound. The surface of the volatilizable compound is exposed to a gas composition for a time duration sufficient to completely etch the volatilizable compound.

摘要翻译： 公开了一种用于控制化学干蚀刻以改善蚀刻表面的平滑度的方法。 将离子植入表面以在足够低的温度下形成可挥发化合物，以避免，减少或消除可挥发化合物的三维结构的形成，这可能在可挥发化合物的蚀刻表面产生粗糙度。 以足够的能量施加离子以在蚀刻循环中渗透到要从表面除去的预定深度的材料，并以足够的剂量实现完全形成可挥发化合物。 可挥发化合物的表面暴露于气体组合物持续足够时间以完全蚀刻可挥发化合物。

公开(公告)号：US07883630B2

公开(公告)日：2011-02-08

申请号：US12239698

申请日：2008-09-26

申请人： Vladimir V. Makarov ,  Theodore R. Lundquist

发明人： Vladimir V. Makarov ,  Theodore R. Lundquist

IPC分类号： H01L21/00

CPC分类号： C23F4/00 ,  H01J37/3053 ,  H01J2237/3114 ,  H01J2237/31744 ,  H01L21/32131

摘要： Apparatus and processes are disclosed for milling copper adjacent to organic low-k dielectric on a substrate by directing a charged-particle beam at a portion of the copper and exposing the copper to a precursor sufficient to enhance removal of the copper relative to removal of the dielectric, wherein the precursor contains an oxidizing agent, has a high sticking coefficient and a long residence time on the copper, contains atoms of at least one of carbon and silicon in amount sufficient to stop oxidation of the dielectric, and contains no atoms of chlorine, bromine or iodine. In one embodiment, the precursor comprises at least one of the group consisting of NitroEthanol, NitroEthane, NitroPropane, NitroMethane, compounds based on silazane such as HexaMethylCycloTriSilazane, and compounds based on siloxane such as Octa-Methyl-Cyclo-Tetra-Siloxane. Products of the processes are also disclosed.

摘要翻译： 公开了用于通过在铜的一部分处引导带电粒子束并将铜暴露于足以增强铜相对于去除铜的前体的前体来研磨邻近有机低k电介质的铜的装置和方法 电介质，其中所述前体含有氧化剂，在铜上具有高粘附系数和长停留时间，含有足以阻止电介质氧化的碳和硅中的至少一种的原子，并且不含有氯原子 ，溴或碘。 在一个实施方案中，前体包括硝基乙醇，硝基乙烷，硝基丙烷，硝基甲烷，基于硅氮烷的化合物如六甲基环己基硅氮烷和基于硅氧烷的化合物如八甲基环四硅氧烷中的至少一种。 还公开了该方法的产品。

公开(公告)号：US07868290B2

公开(公告)日：2011-01-11

申请号：US12232972

申请日：2008-09-26

申请人： Hans W. P. Koops ,  Peter Hoffrogge

发明人： Hans W. P. Koops ,  Peter Hoffrogge

IPC分类号： G01N23/00

CPC分类号： H01J37/3056 ,  H01J2237/006 ,  H01J2237/162 ,  H01J2237/166 ,  H01J2237/31732 ,  H01J2237/31744

摘要： A material processing system for processing a work piece is provided. The material processing is effected by supplying a reactive gas and energetic radiation for activation of the reactive gas to a surrounding of a location of the work piece to be processed. The radiation is preferably provided by an electron microscope. An objective lens of the electron microscope is preferably disposed between a detector of the electron microscope and the work piece. A gas supply arrangement of the material processing system comprises a valve disposed spaced apart from the processing location, a gas volume between the valve and a location of emergence of the reaction gas being small. The gas supply arrangement further comprises a temperature-adjusted, especially cooled reservoir for accommodating a starting material for the reactive gas.

摘要翻译： 提供了一种用于处理工件的材料处理系统。 材料处理通过提供反应气体和能量辐射来激活反应气体到待处理工件的位置的周围。 辐射优选由电子显微镜提供。 电子显微镜的物镜优选设置在电子显微镜的检测器和工件之间。 材料处理系统的气体供应装置包括与处理位置间隔开的阀，阀之间的气体体积和反应气体的出现位置较小。 气体供应装置还包括温度调节的特别冷却的储存器，用于容纳用于反应气体的起始材料。

公开(公告)号：US20100178601A1

公开(公告)日：2010-07-15

申请号：US12733090

申请日：2008-08-06

申请人： Osamu Takaoka

发明人： Osamu Takaoka

IPC分类号： G03F1/00 ,  C23F1/08

CPC分类号： G03F1/74 ,  H01J37/3056 ,  H01J2237/0807 ,  H01J2237/31744

摘要： A photomask defect correction method corrects a defect of the photomask, and includes an observation process of observing the defect of a portion to be corrected and acquiring defect information for performing correction, and a defect correction process of irradiating a focused ion beam formed of rare gas ions and generated by an ion beam irradiation system including a gas field ion source to the portion to be corrected and correcting the defect.

摘要翻译： 光掩模缺陷校正方法校正光掩模的缺陷，并且包括观察被校正部分的缺陷并获取用于进行校正的缺陷信息的观察处理，以及照射由稀有气体形成的聚焦离子束的缺陷校正处理 离子，并且由包括气体场离子源的离子束照射系统产生到待校正部分并校正缺陷。

公开(公告)号：US07511289B2

公开(公告)日：2009-03-31

申请号：US11799973

申请日：2007-05-03

申请人： Takashi Kaito

发明人： Takashi Kaito

IPC分类号： H01J37/08 ,  H01L21/306

CPC分类号： H01J37/3056 ,  H01J2237/31744

摘要： A working method of performing beam assist deposition or beam assist etching of a sample comprises irradiating a focused charged particle beam onto a region of the sample, and blowing a predetermined gas through a gas blowing nozzle toward the sample region while the focused charged particle beam passes through a passage in a side portion of the gas blowing nozzle and irradiates the sample region. The passage may be a slot provided in the side portion of the gas blowing nozzle such that the focused charged particle beam passes through an inside of the slot. The slot terminates at one end near a tip of the gas blowing nozzle, and the one end of the slot terminates at and opens into the interior of the gas blowing nozzle.

摘要翻译： 对样品进行光束辅助沉积或光束辅助蚀刻的工作方法包括将聚焦的带电粒子束照射到样品的区域上，并且在聚焦的带电粒子束通过时将预定气体通过气体吹送喷嘴吹向样品区域 通过气体吹入喷嘴的侧部的通道并照射样品区域。 通道可以是设置在气体吹出喷嘴的侧部中的狭缝，使得聚焦的带电粒子束穿过槽的内部。 该槽在气体喷嘴的尖端附近的一端处终止，并且槽的一端终止于并且通向气体吹出喷嘴的内部。

公开(公告)号：US20080314871A1

公开(公告)日：2008-12-25

申请号：US11766680

申请日：2007-06-21

申请人： Milos Toth ,  Noel Smith

发明人： Milos Toth ,  Noel Smith

IPC分类号： H01L21/3065

CPC分类号： B05C21/005 ,  B81C1/00531 ,  B81C2201/0132 ,  B81C2201/0143 ,  H01J37/3053 ,  H01J37/317 ,  H01J2237/3174 ,  H01J2237/31744 ,  H01J2237/31749

摘要： A method for fabrication of microscopic structures that uses a beam process, such as beam-induced decomposition of a precursor, to deposit a mask in a precise pattern and then a selective, plasma beam is applied, comprising the steps of first creating a protective mask upon surface portions of a substrate using a beam process such as an electron beam, focused ion beam (FIB), or laser process, and secondly etching unmasked substrate portions using a selective plasma beam etch process. Optionally, a third step comprising the removal of the protective mask may be performed with a second, materially oppositely selective plasma beam process.

摘要翻译： 一种用于制造微结构的方法，其中使用诸如光束引发的前体分解的光束过程，以精确图案沉积掩模，然后选择性等离子体束，包括以下步骤：首先产生保护掩模 使用诸如电子束，聚焦离子束（FIB）或激光工艺的光束过程在衬底的表面部分上，并且其次使用选择性等离子体束蚀刻工艺来蚀刻未掩模的衬底部分。 可选地，包括去除保护掩模的第三步骤可以用第二种，实质上相对地选择的等离子体束工艺进行。