公开(公告)号：US20140346541A1

公开(公告)日：2014-11-27

申请号：US14345852

申请日：2012-08-23

申请人： Joachim Hertkorn ,  Karl Engl ,  Berthold Hahn ,  Andreas Weimar

发明人： Joachim Hertkorn ,  Karl Engl ,  Berthold Hahn ,  Andreas Weimar

IPC分类号： H01L33/00 ,  H01L33/02 ,  H01L33/22 ,  H01L33/12 ,  H01L33/32 ,  H01L33/24

CPC分类号： H01L33/145 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02664 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of producing an optoelectronic semiconductor chip includes providing a growth substrate, producing a III nitride nucleation layer on the growth substrate by sputtering, wherein a material of the growth substrate differs from a material of the nucleation layer, and growing a III nitride semiconductor layer sequence having an active layer onto the nucleation layer.

摘要翻译： 制造光电子半导体芯片的方法包括提供生长衬底，通过溅射在生长衬底上产生III族氮化物成核层，其中生长衬底的材料与成核层的材料不同，以及生长III族氮化物半导体层 序列在成核层上具有活性层。

公开(公告)号：US08872330B2

公开(公告)日：2014-10-28

申请号：US12376425

申请日：2007-07-16

申请人： Siegfried Herrmann ,  Berthold Hahn

发明人： Siegfried Herrmann ,  Berthold Hahn

IPC分类号： H01L23/367 ,  H01L33/64 ,  H01L33/00 ,  H01L33/62 ,  H01L27/15 ,  H01L33/38

CPC分类号： H01L33/0079 ,  H01L27/15 ,  H01L33/385 ,  H01L33/54 ,  H01L33/62 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A thin-film semiconductor component having a carrier layer and a layer stack which is arranged on the carrier layer, the layer stack containing a semiconductor material and being provided for emitting radiation, wherein a heat dissipating layer provided for cooling the semiconductor component is applied on the carrier layer. A component assembly is also disclosed.

摘要翻译： 一种具有载体层和层叠体的薄膜半导体部件，其布置在载体层上，所述层叠体包含半导体材料并被设置用于发射辐射，其中设置用于冷却半导体部件的散热层被施加到 载体层。 还公开了一种组件组件。

公开(公告)号：US08581279B2

公开(公告)日：2013-11-12

申请号：US11921530

申请日：2006-06-02

申请人： Johannes Baur ,  Volker Härle ,  Berthold Hahn ,  Andreas Weimar ,  Raimund Oberschmid ,  Ewald Karl Michael Guenther ,  Franz Eberhard ,  Markus Richter ,  Jörg Strauss

发明人： Johannes Baur ,  Volker Härle ,  Berthold Hahn ,  Andreas Weimar ,  Raimund Oberschmid ,  Ewald Karl Michael Guenther ,  Franz Eberhard ,  Markus Richter ,  Jörg Strauss

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).

公开(公告)号：US08581264B2

公开(公告)日：2013-11-12

申请号：US12922864

申请日：2009-05-28

申请人： Martin Strassburg ,  Hans-Juergen Lugauer ,  Vincent Grolier ,  Berthold Hahn ,  Richard Floeter

发明人： Martin Strassburg ,  Hans-Juergen Lugauer ,  Vincent Grolier ,  Berthold Hahn ,  Richard Floeter

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/025 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/325 ,  H01S5/305

摘要： A semiconductor body includes an n-conductive semiconductor layer and a p-conductive semiconductor layer. The p-conductive semiconductor layer contains a p-dopant and the n-conductive semiconductor layer an n-dopant and a further dopant.

摘要翻译： 半导体本体包括n导电半导体层和p导电半导体层。 p导电半导体层包含p-掺杂剂，并且n导电半导体层包含n掺杂剂和另外的掺杂剂。

公开(公告)号：US08273593B2

公开(公告)日：2012-09-25

申请号：US13027810

申请日：2011-02-15

申请人： Berthold Hahn ,  Stephan Kaiser ,  Volker Härle

发明人： Berthold Hahn ,  Stephan Kaiser ,  Volker Härle

IPC分类号： H01L21/66 ,  H01L21/30

CPC分类号： H01L33/22 ,  H01L33/0079

摘要： A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, wherein the semiconductor layer sequence is grown on a substrate, a mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer, the semiconductor layer sequence is separated from the substrate, and a separation surface of the semiconductor layer sequence, from which the substrate is separated, is etched by an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface.

摘要翻译： 一种用于对薄膜发​​光二极管芯片的半导体层序列的辐射发射表面进行微图形化的方法，其中在衬底上生长半导体层序列，在半导体层序列上形成或施加镜面层， 在半导体层序列中在半导体层序列中产生的至少一部分辐射反射回半导体层序列并且朝向镜面层，半导体层序列与衬底分离，并且半导体层的分离表面 衬底分离的层序列被蚀刻剂蚀刻，蚀刻剂主要在晶体缺陷处蚀刻并选择性地蚀刻分离表面处的不同晶面。

公开(公告)号：US08017953B2

公开(公告)日：2011-09-13

申请号：US12158474

申请日：2006-11-21

申请人： Berthold Hahn ,  Ralph Wirth ,  Tony Albrecht ,  Magnus Ahlstedt ,  Stefan Illek ,  Klaus Streubel

发明人： Berthold Hahn ,  Ralph Wirth ,  Tony Albrecht ,  Magnus Ahlstedt ,  Stefan Illek ,  Klaus Streubel

IPC分类号： H01L27/15

CPC分类号： H01L33/145 ,  H01L33/42

摘要： An LED chip is specified that comprises at least one current barrier. The current barrier is suitable for selectively preventing or reducing, by means of a reduced current density, the generation of radiation in a region laterally covered by the electrical connector body. The current spreading layer contains at least one TCO (Transparent Conductive Oxide). In a particularly preferred embodiment, at least one current barrier is contained which comprises material of the epitaxial semiconductor layer sequence, material of the current spreading layer and/or an interface between the semiconductor layer sequence and the current spreading layer. A method for producing an LED chip is also specified.

摘要翻译： 指定包括至少一个电流屏障的LED芯片。 电流屏障适合于通过减小的电流密度选择性地防止或减少由电连接器主体横向覆盖的区域中的辐射的产生。 电流扩散层含有至少一种TCO（透明导电氧化物）。 在特别优选的实施例中，包含至少一个电流屏障，其包括外延半导体层序列的材料，电流扩展层的材料和/或半导体层序列和电流扩展层之间的界面。 还指定了用于制造LED芯片的方法。

公开(公告)号：US07939844B2

公开(公告)日：2011-05-10

申请号：US11755284

申请日：2007-05-30

申请人： Berthold Hahn ,  Ulrich Jacob ,  Hans-Jürgen Lugauer ,  Manfred Mundbrod-Vangerow

发明人： Berthold Hahn ,  Ulrich Jacob ,  Hans-Jürgen Lugauer ,  Manfred Mundbrod-Vangerow

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L24/73 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/01067 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided, on its main surface (9) facing away from the active region (19), with a reflective contact metallization (6) comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.

摘要翻译： 发光二极管芯片（1）包括GaN基辐射发射外延层序列（3），有源区（19），n掺杂层（4）和p掺杂层（5）。 p型掺杂层（5）在其主表面（9）上面向远离有源区（19）的反射接触金属化（6）提供，反射接触金属化（6）包括一个放射性接触层（15）和一个反射层（16） ）。 提供了通过薄膜技术制造这种类型的LED芯片的方法，以及包含这种LED芯片的LED组件。

公开(公告)号：US20100133564A1

公开(公告)日：2010-06-03

申请号：US11990099

申请日：2006-08-04

申请人： Siegfried Herrmann ,  Berthold Hahn

发明人： Siegfried Herrmann ,  Berthold Hahn

IPC分类号： H01L33/00 ,  H01L21/20 ,  H01L29/02 ,  H01L21/30

CPC分类号： H01L21/6835 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L33/0079 ,  H01L2221/68363 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/181 ,  Y02P20/582 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

摘要： The invention relates to a method for producing semiconductor components, wherein a layer composite (6) containing a semiconductor material is formed on a growth substrate (1), a flexible carrier layer is applied to the layer composite (6), the flexible carrier layer is cured to form a self-supporting carrier layer (2), and the growth substrate (1) is stripped away. As an alternative, the carrier layer (2) may have a base layer (2b) and an adhesion layer (2a) adhering on the layer composite.

摘要翻译： 本发明涉及一种生产半导体元件的方法，其中在生长衬底（1）上形成含有半导体材料的复合层（6），将柔性载体层施加到复合层（6）上，柔性载体层 固化以形成自支撑载体层（2），剥离生长衬底（1）。 作为替代，载体层（2）可以具有粘附在层复合物上的基底层（2b）和粘附层（2a）。

公开(公告)号：US07482181B2

公开(公告)日：2009-01-27

申请号：US10762097

申请日：2004-01-20

申请人： Berthold Hahn ,  Andreas Hangleiter ,  Volker Härle

发明人： Berthold Hahn ,  Andreas Hangleiter ,  Volker Härle

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L33/02 ,  H01L33/32

摘要： A light-emitting device is based on a gallium nitride-based compound semiconductor. A light-emitting layer with a first and a second main surface is formed from a compound semiconductor based on gallium nitride. A first coating layer, which is joined to the first main surface of the light-emitting layer, is formed from an n-type compound semiconductor based on gallium nitride. The composition of which differs from that of the compound semiconductor of the light-emitting layer. A second coating layer, which is joined to the second main surface of the light-emitting layer, is formed from a p-type compound semiconductor based on gallium nitride, the composition of which differs from that of the compound semiconductor of the light-emitting layer. To improve the light yield of the device, the thickness of the light-emitting layer in the vicinity of dislocations is configured to be lower than in the remaining regions.

摘要翻译： 发光器件基于氮化镓基化合物半导体。 具有第一和第二主表面的发光层由基于氮化镓的化合物半导体形成。 与发光层的第一主表面接合的第一涂层由基于氮化镓的n型化合物半导体形成。 其组成与发光层的化合物半导体的组成不同。 与发光层的第二主表面接合的第二涂层由基于氮化镓的p型化合物半导体形成，其组成与发光的化合物半导体的组成不同 层。 为了提高器件的光产量，位错附近的发光层的厚度被配置为低于其余区域中的厚度。

公开(公告)号：US07319247B2

公开(公告)日：2008-01-15

申请号：US10258340

申请日：2001-03-16

申请人： Stefan Bader ,  Berthold Hahn ,  Volker Härle ,  Hans-Jürgen Lugauer ,  Manfred Mundbrod-Vangerow

发明人： Stefan Bader ,  Berthold Hahn ,  Volker Härle ,  Hans-Jürgen Lugauer ,  Manfred Mundbrod-Vangerow

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/10 ,  H01L33/145 ,  H01L33/32 ,  H01L33/40 ,  H01L33/405 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence (3) is provided on substantially the full area of its p-side (9) with a reflective, bondable p-contact layer (6). The substrate (2) is provided on its main surface (10) facing away from the epitaxial layer sequence (3) with a contact metallization (7) that covers only a portion of said main surface (10), and the decoupling of light from the chip (1) takes place via a bare region of the main surface (10) of the substrate (2) and via the chip sides (14). A further LED chip has epitaxial layers only. The p-type epitaxial layer (5) is provided on substantially the full area of the main surface (9) facing away from the n-conductive epitaxial layer (4) with a reflective, bondable p-contact layer (6), and the n-conductive epitaxial layer (4) is provided on its main surface facing away from the p-conductive epitaxial layer (5) with an n-contact layer (7) that covers only a portion of said main surface (8). The decoupling of light from the chip (1) takes place via the bare region of the main surface (8) of the n-conductive epitaxial layer (4) and via the chip sides (14).

摘要翻译： 一种LED芯片，其包括导电和无辐射基板，其中外延层序列（3）在其p侧（9）的基本上整个区域上设置有反射的，可粘合的p接触层（6）。 衬底（2）在其主表面（10）上设置为背离外延层序列（3），接触金属化（7）仅覆盖所述主表面（10）的一部分，并且光 芯片（1）经由衬底（2）的主表面（10）的裸露区域和芯片侧面（14）发生。 另外的LED芯片仅具有外延层。 p型外延层（5）通过反射型可结合的p接触层（6）设置在主表面（9）的背离n导电外延层（4）的大致整个区域上，并且 n导电外延层（4）在其主表面上设置有远离p导电外延层（5）的n-接触层（7），其仅覆盖所述主表面（8）的一部分。 来自芯片（1）的光的去耦通过n导电外延层（4）的主表面（8）的裸露区域和芯片侧（14）进行。