公开(公告)号：US10177086B2

公开(公告)日：2019-01-08

申请号：US15952935

申请日：2018-04-13

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Charles G. Woychik ,  Arkalgud R. Sitaram ,  Hong Shen ,  Zhuowen Sun ,  Liang Wang ,  Guilian Gao

IPC: H01L23/04 ,  H01L23/48 ,  H01L23/52 ,  H01L23/522 ,  H01L21/768 ,  H01L49/02 ,  H01L21/8234

Abstract: In a microelectronic component having conductive vias (114) passing through a substrate (104) and protruding above the substrate, conductive features (120E.A, 120E.B) are provided above the substrate that wrap around the conductive vias' protrusions (114′) to form capacitors, electromagnetic shields, and possibly other elements. Other features and embodiments are also provided.

公开(公告)号：US09899281B2

公开(公告)日：2018-02-20

申请号：US15265148

申请日：2016-09-14

Applicant: Invensas Corporation

Inventor： Hong Shen ,  Charles G. Woychik ,  Arkalgud R. Sitaram

IPC: H01L23/498 ,  H01L23/055 ,  H01L23/31 ,  H01L21/56 ,  H01L21/288 ,  H01L21/768 ,  H01L25/065 ,  H01L25/00 ,  H01L23/04 ,  H01L23/14 ,  H01L23/367 ,  H01L23/00 ,  H01L23/48 ,  H01L23/538 ,  H01L21/48 ,  H01L23/10

CPC classification number: H01L23/055 ,  H01L21/2885 ,  H01L21/4803 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/76879 ,  H01L21/76897 ,  H01L23/04 ,  H01L23/10 ,  H01L23/147 ,  H01L23/3107 ,  H01L23/315 ,  H01L23/3675 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5389 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06548 ,  H01L2225/06555 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Dies (110) with integrated circuits are attached to a wiring substrate (120), possibly an interposer, and are protected by a protective substrate (410) attached to a wiring substrate. The dies are located in cavities in the protective substrate (the dies may protrude out of the cavities). In some embodiments, each cavity surface puts pressure on the die to strengthen the mechanical attachment of the die the wiring substrate, to provide good thermal conductivity between the dies and the ambient (or a heat sink), to counteract the die warpage, and possibly reduce the vertical size. The protective substrate may or may not have its own circuitry connected to the dies or to the wiring substrate. Other features are also provided.

公开(公告)号：US09824974B2

公开(公告)日：2017-11-21

申请号：US15364534

申请日：2016-11-30

Applicant: Invensas Corporation

Inventor： Guilian Gao ,  Cyprian Emeka Uzoh ,  Charles G. Woychik ,  Hong Shen ,  Arkalgud R. Sitaram ,  Liang Wang ,  Akash Agrawal ,  Rajesh Katkar

IPC: H01L23/48 ,  H01L23/538 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L23/31 ,  H01L21/48 ,  H01L21/683 ,  H01L23/498 ,  H01L23/14 ,  H01L23/15

CPC classification number: H01L23/5385 ,  H01L21/486 ,  H01L21/6835 ,  H01L23/147 ,  H01L23/15 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49827 ,  H01L24/05 ,  H01L24/08 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68331 ,  H01L2224/0401 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/08225 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32105 ,  H01L2224/32106 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48101 ,  H01L2224/48105 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/49097 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/15153 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

Abstract: Die (110) and/or undiced wafers and/or multichip modules (MCMs) are attached on top of an interposer (120) or some other structure (e.g. another integrated circuit) and are covered by an encapsulant (160). Then the interposer is thinned from below. Before encapsulation, a layer (410) more rigid than the encapsulant is formed on the interposer around the die to reduce or eliminate interposer dishing between the die when the interposer is thinned by a mechanical process (e.g. CMP). Other features are also provided.

公开(公告)号：US09812406B2

公开(公告)日：2017-11-07

申请号：US15280175

申请日：2016-09-29

Applicant: Invensas Corporation

Inventor： Hong Shen ,  Liang Wang ,  Rajesh Katkar ,  Charles G. Woychik ,  Guilian Gao

IPC: H01L23/12 ,  H01L23/00 ,  H01L21/48 ,  H01L23/498 ,  H01L25/065 ,  H01L21/56 ,  H01L23/538 ,  H01L23/31 ,  H01L23/053 ,  H01L23/29 ,  H01L23/14 ,  H01L23/15 ,  H01L23/367

CPC classification number: H01L23/562 ,  H01L21/481 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/561 ,  H01L23/053 ,  H01L23/145 ,  H01L23/147 ,  H01L23/15 ,  H01L23/295 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3675 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5384 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/92 ,  H01L24/97 ,  H01L25/0655 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/13111 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/92225 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/16153 ,  H01L2924/16235 ,  H01L2924/16251 ,  H01L2924/16315 ,  H01L2924/1632 ,  H01L2924/167 ,  H01L2924/16787 ,  H01L2924/16788 ,  H01L2924/3511 ,  H01L2224/81 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/01029 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

Abstract: Die (110) are attached to an interposer (420), and the interposer/die assembly is placed into a lid cavity (510). The lid (210) is attached to the top of the assembly, possibly to the encapsulant (474) at the top. The lid's legs (520) surround the cavity and extend down below the top surface of the interposer's substrate (420S), possibly to the level of the bottom surface of the substrate or lower. The legs (520) may or may not be attached to the interposer/die assembly. In fabrication, the interposer wafer (420SW) has trenches (478) which receive the lid's legs during the lid placement. The interposer wafer is later thinned to remove the interposer wafer portion below the legs and to dice the interposer wafer. The thinning process also exposes, on the bottom, conductive vias (450) passing through the interposer substrate. Other features are also provided.

公开(公告)号：US20170148764A1

公开(公告)日：2017-05-25

申请号：US14951892

申请日：2015-11-25

Applicant: Invensas Corporation

Inventor： Liang Wang ,  Guilian Gao ,  Hong Shen ,  Rajesh Katkar ,  Belgacem Haba

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/31 ,  H01L21/683 ,  H01L21/56 ,  H01L23/498 ,  H01L21/48 ,  H01L25/00 ,  H01L23/367

CPC classification number: H01L25/0655 ,  H01L21/4846 ,  H01L21/56 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/3675 ,  H01L23/49838 ,  H01L24/11 ,  H01L24/17 ,  H01L24/81 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/116 ,  H01L2224/16057 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/97 ,  H01L2924/15311 ,  H01L2924/16251 ,  H01L2224/81 ,  H01L2224/83

Abstract: A microelectronic assembly includes a dielectric element having bumps projecting from a first surface thereof, the bumps having end surfaces flush with a planarized encapsulation. A circuit structure having a thickness less than or equal to 10 microns, formed by depositing two or more dielectric layers and conductive layers on the respective dielectric layers, has electrically conductive features thereon which electrically contact the bumps. The circuit structure can be formed separately on a carrier and then joined with the bumps on the dielectric element, or the circuit structure can be formed by a build up process on the planarized surface of the encapsulation and the planarized surfaces of the bumps.

公开(公告)号：US09548273B2

公开(公告)日：2017-01-17

申请号：US14704714

申请日：2015-05-05

Applicant: Invensas Corporation

Inventor： Guilian Gao ,  Cyprian Emeka Uzoh ,  Charles G. Woychik ,  Hong Shen ,  Arkalgud R. Sitaram ,  Liang Wang ,  Akash Agrawal ,  Rajesh Katkar

IPC: H01L23/48 ,  H01L23/538 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L23/31 ,  H01L21/48

CPC classification number: H01L23/5385 ,  H01L21/486 ,  H01L21/6835 ,  H01L23/147 ,  H01L23/15 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49827 ,  H01L24/05 ,  H01L24/08 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68331 ,  H01L2224/0401 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/08225 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32105 ,  H01L2224/32106 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48101 ,  H01L2224/48105 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/49097 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/15153 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

Abstract: Die (110) and/or undiced wafers and/or multichip modules (MCMs) are attached on top of an interposer (120) or some other structure (e.g. another integrated circuit) and are covered by an encapsulant (160). Then the interposer is thinned from below. Before encapsulation, a layer (410) more rigid than the encapsulant is formed on the interposer around the die to reduce or eliminate interposer dishing between the die when the interposer is thinned by a mechanical process (e.g. CMP). Other features are also provided.

Abstract translation: 模具（110）和/或未开封的晶片和/或多芯片模块（MCM）被附接在插入器（120）或一些其它结构（例如另一集成电路）的顶部上并被密封剂（160）覆盖。 然后插入器从下面变薄。 在封装之前，在封装周围的插入件周围形成比密封剂更刚性的层（410），以通过机械工艺（例如CMP）来减小或消除插入件在裸片间的凹陷。 还提供其他功能。

公开(公告)号：US20160247758A1

公开(公告)日：2016-08-25

申请号：US14629271

申请日：2015-02-23

Applicant: Invensas Corporation

Inventor： Hong Shen ,  Liang Wang ,  Arkalgud R. Sitaram

IPC: H01L23/522 ,  H01L23/532

CPC classification number: H01L24/09 ,  H01L21/486 ,  H01L23/147 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5226 ,  H01L23/53209 ,  H01L24/89 ,  H01L25/0652 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/08168 ,  H01L2224/08501 ,  H01L2224/73204 ,  H01L2224/80487 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/05442 ,  H01L2924/1304 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/3511

Abstract: Two microelectronic components (110, 120), e.g. a die and an interposer, are bonded to each other. One of the components' contact pads (110C) include metal, and the other component has silicon (410) which reacts with the metal to form metal silicide (504). Then a hole (510) is made through one of the components to reach the metal silicide and possibly even the unreacted metal (110C) of the other component. The hole is filled with a conductor (130), possibly metal, to provide a conductive via that can be electrically coupled to contact pads (120C.B) attachable to other circuit elements or microelectronic components, e.g. to a printed circuit board.

Abstract translation: 两个微电子部件（110,120），例如 模具和插入件彼此结合。 部件的接触焊盘（110C）中的一个包括金属，另一部件具有与金属反应形成金属硅化物（504）的硅（410）。 然后通过其中一个部件制成一个孔（510），以到达金属硅化物，甚至可能连接另一部件的未反应的金属（110C）。 该孔填充有可能是金属的导体（130），以提供可电耦合到可附接到其它电路元件或微电子部件的接触焊盘（120C.B）的导电通孔，例如。 到印刷电路板。

公开(公告)号：US20160126174A1

公开(公告)日：2016-05-05

申请号：US14533728

申请日：2014-11-05

Applicant: Invensas Corporation

Inventor： Hong Shen ,  Liang Wang ,  Gabriel Z. Guevara ,  Rajesh Katkar ,  Cyprian Emeka Uzoh ,  Laura Wills Mirkarimi

IPC: H01L23/498 ,  H01L21/48 ,  H01L25/00 ,  H01L25/065

CPC classification number: H01L23/49822 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49805 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/09 ,  H01L24/48 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/15192 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/85399

Abstract: An interposer (110) has contact pads at the top and/or bottom surfaces for connection to circuit modules (e.g. ICs 112). The interposer includes a substrate made of multiple layers (110.i). Each layer can be a substrate (110S), possibly a ceramic substrate, with circuitry. The substrates extend vertically. Multiple interposers are fabricated in a single structure (310) made of vertical layers (310.i) corresponding to the interposers' layers. The structure is diced along horizontal planes (314) to provide the interposers. An interposer's vertical conductive lines (similar to through-substrate vias) can be formed on the substrates' surfaces before dicing and before all the substrates are attached to each other. Thus, there is no need to make through-substrate holes for the vertical conductive lines. Non-vertical features can also be formed on the substrates' surfaces before the substrates are attached to each other. Other embodiments are also provided.

Abstract translation: 插入器（110）在顶部和/或底部表面处具有用于连接到电路模块（例如IC 112）的接触焊盘。 插入器包括由多层（110.i）制成的衬底。 每个层可以是具有电路的衬底（110S），可能是陶瓷衬底。 基板垂直延伸。 在由对应于插入层的垂直层（310.i）制成的单个结构（310）中制造多个插入件。 沿着水平面（314）切割结构以提供插入件。 在切割之前和所有基板彼此附接之前，可以在基板表面上形成插入件的垂直导线（类似于贯穿基板通孔）。 因此，不需要对垂直导线进行贯通基板孔。 在基板彼此附接之前，也可以在基板表面上形成非垂直特征。 还提供了其他实施例。

公开(公告)号：US11205600B2

公开(公告)日：2021-12-21

申请号：US16599683

申请日：2019-10-11

Applicant: INVENSAS CORPORATION

Inventor： Hong Shen ,  Charles G. Woychik ,  Sitaram R. Arkalgud

IPC: H01L23/055 ,  H01L25/065 ,  H01L23/31 ,  H01L21/56 ,  H01L23/04 ,  H01L23/14 ,  H01L23/367 ,  H01L23/00 ,  H01L21/288 ,  H01L21/768 ,  H01L23/498 ,  H01L25/00 ,  H01L23/48 ,  H01L23/538 ,  H01L21/48 ,  H01L23/10

Abstract: Dies (110) with integrated circuits are attached to a wiring substrate (120), possibly an interposer, and are protected by a protective substrate (410) attached to a wiring substrate. The dies are located in cavities in the protective substrate (the dies may protrude out of the cavities). In some embodiments, each cavity surface puts pressure on the die to strengthen the mechanical attachment of the die the wiring substrate, to provide good thermal conductivity between the dies and the ambient (or a heat sink), to counteract the die warpage, and possibly reduce the vertical size. The protective substrate may or may not have its own circuitry connected to the dies or to the wiring substrate. Other features are also provided.

公开(公告)号：US20200091110A1

公开(公告)日：2020-03-19

申请号：US16687498

申请日：2019-11-18

Applicant: Invensas Corporation

Inventor： Hong Shen ,  Liang Wang ,  Guilian Gao

IPC: H01L23/00 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/304 ,  H01L21/306 ,  H01L25/00 ,  H01L21/683 ,  H01L21/78 ,  H01L21/56

Abstract: Systems and methods for providing 3D wafer assembly with known-good-dies are provided. An example method compiles an index of dies on a semiconductor wafer and removes the defective dies to provide a wafer with dies that are all operational. Defective dies on multiple wafers may be removed in parallel, and resulting wafers with all good dies stacked in 3D wafer assembly. In an implementation, the spaces left by removed defective dies may be filled at least in part with operational dies or with a fill material. Defective dies may be replaced either before or after wafer-to-wafer assembly to eliminate production of defective stacked devices, or the spaces may be left empty. A bottom device wafer may also have its defective dies removed or replaced, resulting in wafer-to-wafer assembly that provides 3D stacks with no defective dies.