公开(公告)号：US20170084454A1

公开(公告)日：2017-03-23

申请号：US14856930

申请日：2015-09-17

申请人： International Business Machines Corporation

发明人： Stephen W. Bedell ,  Bruce B. Doris ,  Keith E. Fogel ,  Alexander Reznicek

IPC分类号： H01L21/02 ,  H01L29/78 ,  H01L29/66 ,  H01L29/161 ,  H01L29/06

CPC分类号： H01L21/02532 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/30604 ,  H01L21/3085 ,  H01L21/3247 ,  H01L21/76283 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/66795 ,  H01L29/785

摘要： A method of making a semiconductor device includes forming a first fin in a first semiconducting material layer disposed over a substrate, the first semiconducting material layer comprising an element in a first concentration; and forming a second fin in a second semiconducting material layer disposed over the substrate and adjacent to the first semiconducting material layer, the second semiconducting material layer comprising the element in a second concentration; wherein the first concentration is different than the second concentration.

公开(公告)号：US20170032963A1

公开(公告)日：2017-02-02

申请号：US14812797

申请日：2015-07-29

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Kangguo Cheng ,  Keith E. Fogel ,  Jeehwan Kim ,  Devendra K. Sadana

IPC分类号： H01L21/02 ,  H01L29/04 ,  H01L21/30 ,  H01L29/165

CPC分类号： H01L21/02428 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02494 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02658 ,  H01L21/02694 ,  H01L21/3247 ,  H01L29/04 ,  H01L29/045 ,  H01L29/267

摘要： A method for forming a heteroepitaxial layer includes forming an epitaxial grown layer on a monocrystalline substrate and patterning the epitaxial grown layer to form fins. The fins are converted to porous fins. A surface of the porous fins is treated to make the surface suitable for epitaxial growth. Lattice mismatch is compensated for between an epitaxially grown monocrystalline layer grown on the surface and the monocrystalline substrate by relaxing the epitaxially grown monocrystalline layer using the porous fins to form a relaxed heteroepitaxial interface with the monocrystalline substrate.

摘要翻译： 用于形成异质外延层的方法包括在单晶衬底上形成外延生长层并对外延生长层进行图案化以形成翅片。 翅片转换成多孔翅片。 处理多孔翅片的表面以使表面适合外延生长。 通过使用多孔翅片放松外延生长的单晶层，在表面生长的外延生长单晶层和单晶衬底之间补偿晶格不匹配，从而与单晶衬底形成松散的异质外延界面。

公开(公告)号：US20160343899A1

公开(公告)日：2016-11-24

申请号：US15229604

申请日：2016-08-05

申请人： International Business Machines Corporation ,  EGYPT NANOTECHNOLOGY CENTER

发明人： Keith E. Fogel ,  Jeehwan Kim ,  Devendra K. Sadana ,  George S. Tulevski ,  Ahmed Abou-Kandil ,  Hisham S. Mohamed ,  Mohamed Saad ,  Osama Tobail

IPC分类号： H01L31/18 ,  H01L31/20

CPC分类号： H01L31/1884 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/056 ,  H01L31/07 ,  H01L31/075 ,  H01L31/20 ,  H01L2031/0344 ,  Y02E10/52 ,  Y02E10/548

摘要： A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.

公开(公告)号：US09502609B2

公开(公告)日：2016-11-22

申请号：US14744602

申请日：2015-06-19

申请人： International Business Machines Corporation

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Devendra K. Sadana

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/44 ,  H01L33/56 ,  H01L33/58 ,  H01L33/64 ,  H01L2933/0025 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2933/0075

摘要： Techniques for integrating spalling into layer transfer processes involving optical device semiconductor materials are provided. In one aspect, a layer transfer method for an optical device semiconductor material includes forming the optical device semiconductor material on a first substrate; depositing a metal stressor layer on top of the optical device semiconductor material; attaching a first handle layer to the metal stressor layer; removing the optical device semiconductor material from the first substrate by pulling the first handle layer away from the first substrate; attaching a second handle layer to the optical device semiconductor material; removing the first handle layer from the stack; and forming a second substrate on the stressor layer. Vertical LED devices and techniques for formation thereof are also provided.

摘要翻译： 提供了将剥落集成到涉及光学器件半导体材料的层转移工艺中的技术。 一方面，用于光学器件半导体材料的层转移方法包括在第一衬底上形成光学器件半导体材料; 在所述光学器件半导体材料的顶部上沉积金属应力层; 将第一手柄层附接到所述金属应力层; 通过将第一手柄层拉离第一基底从第一基底去除光学器件半导体材料; 将第二手柄层附接到所述光学器件半导体材料; 从堆叠中移除第一手柄层; 以及在所述应力层上形成第二衬底。 还提供垂直LED装置及其形成技术。

公开(公告)号：US09502540B1

公开(公告)日：2016-11-22

申请号：US14968313

申请日：2015-12-14

申请人： International Business Machines Corporation

发明人： Stephen W. Bedell ,  Bruce B. Doris ,  Keith E. Fogel ,  Alexander Reznicek

IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L21/306 ,  H01L21/308 ,  H01L21/324

CPC分类号： H01L21/02532 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/30604 ,  H01L21/3085 ,  H01L21/3247 ,  H01L21/76283 ,  H01L21/845 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/66795 ,  H01L29/785

摘要： A method of making a semiconductor device includes forming a first fin in a first semiconducting material layer disposed over a substrate, the first semiconducting material layer comprising an element in a first concentration; and forming a second fin in a second semiconducting material layer disposed over the substrate and adjacent to the first semiconducting material layer, the second semiconducting material layer comprising the element in a second concentration; wherein the first concentration is different than the second concentration.

摘要翻译： 制造半导体器件的方法包括在设置在衬底上的第一半导体材料层中形成第一鳍状物，所述第一半导体材料层包含第一浓度的元素; 以及在第二半导体材料层上形成第二鳍片，所述第二半导体材料层设置在所述衬底上并与所述第一半导体材料层相邻，所述第二半导体材料层包含所述元件的第二浓度; 其中所述第一浓度不同于所述第二浓度。

公开(公告)号：US09496401B1

公开(公告)日：2016-11-15

申请号：US14755520

申请日：2015-06-30

申请人： International Business Machines Corporation

发明人： Kangguo Cheng ,  Keith E. Fogel ,  Pouya Hashemi ,  Alexander Reznicek

IPC分类号： H01L29/775 ,  H01L21/335 ,  H01L29/78 ,  H01L29/205 ,  H01L29/66 ,  H01L29/32 ,  H01L29/04 ,  H01L21/02

CPC分类号： H01L29/7851 ,  H01L21/02455 ,  H01L21/02538 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/205 ,  H01L29/32 ,  H01L29/66522 ,  H01L29/66795

摘要： A semiconductor structure containing a multiple threshold voltage III-V device is provided. The III-V device includes a III-V compound semiconductor core portion and a III-V compound semiconductor shell portion. The III-V compound semiconductor core and shell portions are virtually defect-free. The III-V compound semiconductor core portion of the III-V device is used for back-gating to achieve multiple threshold voltages. The III-V compound semiconductor shell portion of the III-V device is used as a channel material for a field effect transistor.

摘要翻译： 提供了包含多个阈值电压III-V器件的半导体结构。 III-V器件包括III-V族化合物半导体芯部分和III-V族化合物半导体外壳部分。 III-V族化合物半导体芯和外壳部分实际上是无缺陷的。 III-V器件的III-V化合物半导体芯部分用于后门控以实现多个阈值电压。 III-V器件的III-V族化合物半导体外壳部分用作场效晶体管的沟道材料。

公开(公告)号：US09496186B1

公开(公告)日：2016-11-15

申请号：US15085068

申请日：2016-03-30

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Stephen W. Bedell ,  Bruce B. Doris ,  Keith E. Fogel ,  Alexander Reznicek

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L29/161

CPC分类号： H01L21/02532 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/30604 ,  H01L21/3085 ,  H01L21/3247 ,  H01L21/76283 ,  H01L21/845 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/66795 ,  H01L29/785

摘要： A method of making a semiconductor device includes forming a first fin in a first semiconducting material layer disposed over a substrate, the first semiconducting material layer comprising an element in a first concentration; and forming a second fin in a second semiconducting material layer disposed over the substrate and adjacent to the first semiconducting material layer, the second semiconducting material layer comprising the element in a second concentration; wherein the first concentration is different than the second concentration.

公开(公告)号：US09490455B2

公开(公告)日：2016-11-08

申请号：US14659114

申请日：2015-03-16

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Keith E. Fogel ,  Jeehwan Kim ,  Ning Li ,  Devendra K. Sadana

IPC分类号： H01L33/26 ,  H01L51/52 ,  H01L33/58

CPC分类号： H01L51/5275 ,  H01L33/0079 ,  H01L33/22 ,  H01L51/52

摘要： A light emitting diode (LED) containing device including a light emitting diode (LED) structure, and a light transmissive substrate in contact with the LED structure. The light transmissive substrate has a texture surface tuned to include features with dimensions greater than a wavelength of light produced by the LED structure. In some embodiments, increasing the feature size of the texture to be comparable to the wavelength of light produced by the LED increases light extraction from the LED in comparison to when the feature size of the texture is substantially less or substantially larger than the wavelength of light.

摘要翻译： 一种包含发光二极管（LED）结构的发光二极管（LED）装置和与该LED结构接触的透光基板。 透光衬底具有被调整为包括尺寸大于由LED结构产生的光的波长的特征的纹理表面。 在一些实施例中，将纹理的特征尺寸增加为与由LED产生的光的波长相当的特征尺寸相比，当纹理的特征尺寸基本上小于或基本上大于光的波长时，从LED增加光提取 。

公开(公告)号：US20160284926A1

公开(公告)日：2016-09-29

申请号：US15178701

申请日：2016-06-10

申请人： International Business Machines Corporation

发明人： Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/20 ,  H01L31/18

CPC分类号： H01L31/078 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/0725 ,  H01L31/0745 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/1884 ,  H01L31/20 ,  Y02E10/548

摘要： A photovoltaic device that includes an upper cell that absorbs a first range of wavelengths of light and a bottom cell that absorbs a second range of wavelengths of light. The bottom cell includes a heterojunction comprising a crystalline germanium containing (Ge) layer. At least one surface of the crystalline germanium (Ge) containing layer is in contact with a silicon (Si) containing layer having a larger band gap than the crystalline (Ge) containing layer.

摘要翻译： 一种光电器件，其包括吸收光的第一波长范围的上电池和吸收第二波长波长的底电池。 底部电池包括含有结晶含锗（Ge）层的异质结。 含结晶锗（Ge）层的至少一个表面与含有结晶（Ge）层的带隙较大的含硅（Si）层接触。

公开(公告)号：US09419138B2

公开(公告)日：2016-08-16

申请号：US14500345

申请日：2014-09-29

申请人： International Business Machines Corporation

发明人： Jeffrey L. Dittmar ,  Keith E. Fogel ,  Sebastian Naczas ,  Alexander Reznicek ,  Devendra K. Sadana

IPC分类号： H01L21/336 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/16

CPC分类号： H01L29/167 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/84 ,  H01L27/092 ,  H01L27/1203 ,  H01L29/16 ,  H01L29/66545 ,  H01L29/66575 ,  H01L29/7848

摘要： Carbon-doped germanium stressor regions are formed in an nFET device region of a germanium substrate and at a footprint of a functional gate structure. The carbon-doped germanium stressor regions are formed by an epitaxial growth process utilizing monomethylgermane (GeH3—CH3) as the carbon source. The carbon-doped germanium stressor regions that are provided yield more strain in less volume since a carbon atom is much smaller than a silicon atom.

摘要翻译： 碳掺杂的锗应力区域形成在锗衬底的nFET器件区域中并且在功能栅极结构的覆盖区。 通过利用单甲基锗烷（GeH 3 -CH 3）作为碳源的外延生长方法形成碳掺杂锗应力区。 由于碳原子比硅原子小得多，所以提供的碳掺杂的锗应力区域在较少的体积中产生更多的应变。