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公开(公告)号：US07942628B2
公开(公告)日：2011-05-17
申请号：US11566337
申请日：2006-12-04
IPC分类号： F01D3/02
CPC分类号： F04D25/16 , F04D17/12 , F04D29/4206 , F25B1/053 , F25B1/10 , F25B2400/13
摘要： A first compression stage and a second compression stage being arranged at positions adjacent to each other. The first centrifugal impeller and the second centrifugal impeller are arranged in such an orientation that back sides of the first centrifugal impeller and the second centrifugal impeller face to each other. A connection flow path is formed in the first housing and the second housing for introducing the compressed fluid from the first compression stage into the second compression stage. An upstream portion of the connection flow path is formed integrally with the first housing, and a downstream portion of the connection flow path is formed integrally with the second housing.
摘要翻译： 第一压缩级和第二压缩级布置在彼此相邻的位置。 第一离心式叶轮和第二离心式叶轮配置成使得第一离心式叶轮和第二离心式叶轮的背面相互面对的方向。 连接流路形成在第一壳体和第二壳体中，用于将压缩流体从第一压缩级引入第二压缩级。 连接流路的上游部与第一壳体一体形成，连接流路的下游部与第二壳体一体形成。
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52.发明授权Plating method, semiconductor device fabrication method and circuit board fabrication method 有权电镀方法，半导体器件制造方法和电路板制造方法公开(公告)号：US07927998B2
公开(公告)日：2011-04-19
申请号：US12684570
申请日：2010-01-08
IPC分类号： H01L21/76
CPC分类号： H01L24/91 , H01L21/4846 , H01L21/4857 , H01L21/486 , H01L21/76801 , H01L21/7687 , H01L21/76873 , H01L21/76874 , H01L21/76885 , H01L23/5283 , H01L23/5389 , H01L24/11 , H01L24/19 , H01L24/45 , H01L24/48 , H01L24/82 , H01L2224/02333 , H01L2224/0401 , H01L2224/04105 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05644 , H01L2224/05655 , H01L2224/1134 , H01L2224/12105 , H01L2224/13144 , H01L2224/13147 , H01L2224/32145 , H01L2224/45144 , H01L2224/48091 , H01L2224/48132 , H01L2224/73267 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01046 , H01L2924/01056 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/13091 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H05K1/162 , H05K1/165 , H05K1/167 , H05K3/381 , H05K3/4602 , H05K3/4661 , H05K2201/0209 , H05K2201/086 , H05K2201/09509 , H05K2203/0195 , H05K2203/0228 , H01L2224/13099 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10, as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.
摘要翻译： 电镀方法包括在基板16上形成树脂层10的步骤; 用切割工具12切割树脂层10的表面部分的步骤; 通过无电解电镀在树脂层10上形成种子层36的步骤; 以及通过电镀在种子层36上形成电镀膜44的步骤。 可以赋予树脂层10的表面适当的粗糙度，由此能够充分确保种子层36与树脂层10之间的粘附性。 树脂层10的表面上也不会形成过度的深孔，如通过干燥处理，可以在树脂层10上形成光致抗蚀剂膜40的微细化图案。因此，可以形成互连44等 能够确保高可靠性的窄间距的树脂层10。
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公开(公告)号：US20110073993A1
公开(公告)日：2011-03-31
申请号：US12926733
申请日：2010-12-07
CPC分类号： H01L28/55
摘要： The present invention provides a novel capacitor element, laminated thin-film device, and circuit wherein the capacitance dependency on voltage can be appropriately adjusted, and a technology for manufacturing such a capacitor element and laminated thin-film device. In the capacitor element that comprises a pair of electrode layers and a dielectric layer disposed between the electrode layers, a well region where an ion is implanted is disposed in the dielectric layer, and the C-V curve between the electrode layers is shifted or shifted and expanded in at least one direction of the plus direction and minus direction with respect to the voltage axis.
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公开(公告)号：US20110056068A1
公开(公告)日：2011-03-10
申请号：US12944904
申请日：2010-11-12
IPC分类号： H05K13/00
CPC分类号： H05K1/162 , H01L21/486 , H01L23/15 , H01L23/498 , H01L23/49827 , H01L23/50 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16235 , H01L2924/00014 , H01L2924/01019 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/3011 , H05K1/0306 , H05K1/112 , H05K3/4605 , H05K2201/0179 , H05K2201/09509 , H05K2201/096 , H05K2201/09627 , H05K2201/10378 , Y10T29/49002 , Y10T29/49128 , Y10T29/4913 , Y10T29/49144 , Y10T29/49155 , Y10T29/49156 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The interposer includes a glass substrate 46 with first through-electrodes 47 buried in; a plurality of resin layers 68, 20, 32 supported by the glass substrate; thin film capacitors 18a, 18b buried between a first resin layer 68 of the plural resin layers and a second resin layer 20 of the plural resin layers and including the first capacitor electrodes 12a, 12b, the second capacitor electrodes 16 opposed to the first capacitor electrodes 12a, 12b, and a dielectric thin film 14 of a relative dielectric constant of 200 or above formed between the first capacitor electrode 12a, 12b and the second capacitor electrode 16, and the second through-electrodes 77a, 77b penetrating the plural resin layers 68, 20, 32, electrically connected to the first through-electrode 47 and electrically connected to the first capacitor electrode 12a, 12b or the second capacitor electrode 16.
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公开(公告)号：US07867869B2
公开(公告)日：2011-01-11
申请号：US10458678
申请日：2003-06-11
IPC分类号： H01L21/203
CPC分类号： H01L28/55
摘要： The present invention provides a novel capacitor element, laminated thin-film device, and circuit wherein the capacitance dependency on voltage can be appropriately adjusted, and a technology for manufacturing such a capacitor element and laminated thin-film device. In the capacitor element that comprises a pair of electrode layers and a dielectric layer disposed between the electrode layers, a well region where an ion is implanted is disposed in the dielectric layer, and the C-V curve between the electrode layers is shifted or shifted and expanded in at least one direction of the plus direction and minus direction with respect to the voltage axis.
摘要翻译： 本发明提供了一种新颖的电容器元件，层叠薄膜器件以及可以适当地调节电容对电压的依赖性的电路，以及用于制造这种电容器元件和层叠薄膜器件的技术。 在包括一对电极层和设置在电极层之间的电介质层的电容器元件中，在电介质层中设置注入离子的阱区，电极层之间的CV曲线偏移或偏移 在相对于电压轴的正方向和负方向的至少一个方向上。
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公开(公告)号：US07863524B2
公开(公告)日：2011-01-04
申请号：US11902251
申请日：2007-09-20
IPC分类号： H05K1/16
CPC分类号： H05K1/162 , H01L21/486 , H01L23/15 , H01L23/498 , H01L23/49827 , H01L23/50 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16235 , H01L2924/00014 , H01L2924/01019 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/3011 , H05K1/0306 , H05K1/112 , H05K3/4605 , H05K2201/0179 , H05K2201/09509 , H05K2201/096 , H05K2201/09627 , H05K2201/10378 , Y10T29/49002 , Y10T29/49128 , Y10T29/4913 , Y10T29/49144 , Y10T29/49155 , Y10T29/49156 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The interposer includes a glass substrate 46 with first through-electrodes 47 buried in; a plurality of resin layers 68, 20, 32 supported by the glass substrate; thin film capacitors 18a, 18b buried between a first resin layer 68 of the plural resin layers and a second resin layer 20 of the plural resin layers and including the first capacitor electrodes 12a, 12b, the second capacitor electrodes 16 opposed to the first capacitor electrodes 12a, 12b, and a dielectric thin film 14 of a relative dielectric constant of 200 or above formed between the first capacitor electrode 12a, 12b and the second capacitor electrode 16, and the second through-electrodes 77a, 77b penetrating the plural resin layers 68, 20, 32, electrically connected to the first through-electrode 47 and electrically connected to the first capacitor electrode 12a, 12b or the second capacitor electrode 16.
摘要翻译： 插入件包括：第一贯通电极47被埋入的玻璃基板46; 由玻璃基板支撑的多个树脂层68,20,32; 埋在多个树脂层的第一树脂层68和多个树脂层的第二树脂层20之间并且包括第一电容器电极12a，12b的薄膜电容器18a，18b，与第一电容器电极相对的第二电容器电极16 12a，12b和形成在第一电容器电极12a，12b和第二电容器电极16之间的相对介电常数为200以上的电介质薄膜14，以及贯穿多个树脂层68的第二贯通电极77a，77b ，20,32，与第一贯通电极47电连接，与第一电容电极12a，12b或第二电容电极16电连接。
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57.发明申请公开(公告)号：US20100264951A1
公开(公告)日：2010-10-21
申请号：US12824896
申请日：2010-06-28
申请人： Takeshi Shioga , Kazuaki Kurihara
发明人： Takeshi Shioga , Kazuaki Kurihara
IPC分类号： G01R31/26
CPC分类号： G01R3/00 , G01R1/07378 , Y10T29/49155
摘要： Recesses are formed on one surface of a substrate. A conductive film covers an inner surface of each of the recesses. This conductive film contacts a bump of a semiconductor device to be inspected and is electrically connected to the bump. It is therefore possible to prevent damages of the bump to be caused by contact of a probe pin.
摘要翻译： 在基板的一个表面上形成凹部。 导电膜覆盖每个凹部的内表面。 该导电膜接触待检查的半导体器件的凸块并与凸点电连接。 因此，可以防止由于探针的接触引起的凸块的损坏。
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公开(公告)号：US20100073822A1
公开(公告)日：2010-03-25
申请号：US12510649
申请日：2009-07-28
IPC分类号： G11B5/48
CPC分类号： G11B5/102 , G11B5/4826 , G11B5/4873 , G11B5/6005
摘要： A magnetic head assembly includes: a slider; an actuator disposed on an end face of the slider; and a magnetic head unit connected to the actuator. The actuator has a structure in which multiple electrodes are arranged in a piezoelectric body, and is driven in d33 mode. In other words, when a predetermined voltage is applied to the actuator, a portion between the electrodes in the piezoelectric body expands or contracts with respect to a voltage application direction. When the piezoelectric body of the actuator expands or contracts, the magnetic head unit is deformed, and the deformation causes a change of the distance between a magnetic head (recording element and reproducing element) and a magnetic recording medium.
摘要翻译： 磁头组件包括：滑块; 致动器，设置在滑块的端面上; 以及连接到致动器的磁头单元。 致动器具有多个电极布置在压电体中并以d33模式驱动的结构。 换句话说，当向致动器施加预定电压时，压电体中的电极之间的部分相对于电压施加方向膨胀或收缩。 当致动器的压电体膨胀或收缩时，磁头单元变形，并且变形引起磁头（记录元件和再现元件）与磁记录介质之间的距离的变化。
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59.发明授权Capacitive element, semiconductor device, and method of manufacturing the capacitive element 有权电容元件，半导体器件以及制造电容元件的方法公开(公告)号：US07491996B2
公开(公告)日：2009-02-17
申请号：US11168547
申请日：2005-06-29
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/016 , H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02197 , H01L21/022 , H01L21/31658 , H01L21/31691 , H01L28/55 , H01L28/65 , H01L2224/16227 , H01L2924/15192 , H01L2924/15312 , H01L2924/19041 , H01L2924/19105 , H01L2924/19106
摘要： A capacitive element includes a base member 10, an underlying insulating film 11 formed on the base member 10, a capacitor Q constructed by forming a lower electrode 13, a capacitor dielectric film 14, and an upper electrode 15 sequentially on the underlying insulating film 11, a lower protection insulating film 16a formed on the upper electrode 15 to cover at least a part of the capacitor Q, and an upper protection insulating film 16b formed on the lower protection insulating film 16a and having a wider energy band gap than the lower protection insulating film 16a.
摘要翻译： 电容性元件包括基底构件10，形成在基底构件10上的下面的绝缘膜11，通过在下面的绝缘膜11上依次形成下部电极13，电容器电介质膜14和上部电极15而构成的电容器Q 形成在上电极15上以覆盖电容器Q的至少一部分的下保护绝缘膜16a和形成在下保护绝缘膜16a上并具有比下保护层更宽的能带隙的上保护绝缘膜16b 绝缘膜16a。
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公开(公告)号：US20080258191A1
公开(公告)日：2008-10-23
申请号：US12036691
申请日：2008-02-25
CPC分类号： H01L27/11502 , H01L27/10852 , H01L27/11507 , H01L28/55
摘要： A capacitor device includes a dielectric layer configured to have a composition represented as (Ba1-x, Srx)Ti1-zScyO3+δ (0
摘要翻译： 电容器装置包括电介质层，该电介质层被配置为具有表示为（Ba x 1-x S 1，Ti x Si 1，Ti x 1，X z） （0
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