Thin film capacitor and fabrication method thereof
    6.
    发明申请
    Thin film capacitor and fabrication method thereof 有权
    薄膜电容器及其制造方法

    公开(公告)号:US20080305607A1

    公开(公告)日:2008-12-11

    申请号:US12219577

    申请日:2008-07-24

    IPC分类号: H01L21/20

    摘要: A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are uniform along the growth direction of the dielectric film while the concentration of the Ba cation is non-uniform along the growth direction such that a reduced Ba-I region in which the average concentration of perovskite type Ba cations (Ba-I) is less than the average concentration of non-perovskite type Ba cations (Ba-II) exists at or near the boundary between at least one of the top and bottom electrodes, with ratio R=(atm % Ba-I)/[(atm % Ba-I)+(atm % Ba-II)] within a range of 0.1

    摘要翻译: 一种薄膜电容器,包括保持在顶部和底部电极之间的顶部电极,底部电极和电介质膜。 电介质膜至少由阳离子Ba,Sr,Ti和阴离子O组成。Sr,Ti和O离子的浓度沿着电介质膜的生长方向是均匀的,而Ba阳离子的浓度是不均匀的 沿着生长方向,使得其中钙钛矿型Ba阳离子(Ba-I)的平均浓度小于非钙钛矿型Ba阳离子(Ba-II)的平均浓度的还原Ba-I区域存在于或接近 比例R =(atm%Ba-I)/ [(atm%Ba-I)+(atm%Ba-II)]在顶部和底部电极中的至少一个之间的边界在0.1

    Thin film capacitor and fabrication method thereof
    7.
    发明申请
    Thin film capacitor and fabrication method thereof 有权
    薄膜电容器及其制造方法

    公开(公告)号:US20070232017A1

    公开(公告)日:2007-10-04

    申请号:US11582480

    申请日:2006-10-18

    IPC分类号: H01L21/20

    摘要: A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are uniform along the growth direction of the dielectric film while the concentration of the Ba cation is non-uniform along the growth direction such that a reduced Ba-I region in which the average concentration of perovskite type Ba cations (Ba-I) is less than the average concentration of non-perovskite type Ba cations (Ba-II) exists at or near the boundary between at least one of the top and bottom electrodes, with ratio R=(atm % Ba-I)/[(atm % Ba-I)+(atm % Ba-II)] within a range of 0.1

    摘要翻译: 一种薄膜电容器,包括保持在顶部和底部电极之间的顶部电极,底部电极和电介质膜。 电介质膜至少由阳离子Ba,Sr,Ti和阴离子O组成。Sr,Ti和O离子的浓度沿着电介质膜的生长方向是均匀的,而Ba阳离子的浓度是不均匀的 沿着生长方向,使得其中钙钛矿型Ba阳离子(Ba-I)的平均浓度小于非钙钛矿型Ba阳离子(Ba-II)的平均浓度的还原Ba-I区域存在于或接近 比例R =(atm%Ba-I)/ [(atm%Ba-I)+(atm%Ba-II)]在顶部和底部电极中的至少一个之间的边界在0.1