公开(公告)号：US20060138458A1

公开(公告)日：2006-06-29

申请号：US11316908

申请日：2005-12-27

申请人： Kenichi Tanaka ,  Tomonori Tanoue ,  Hidetoshi Matsumoto ,  Hiroshi Ohta ,  Kazuhiro Mochizuki ,  Hiroyuki Uchiyama

发明人： Kenichi Tanaka ,  Tomonori Tanoue ,  Hidetoshi Matsumoto ,  Hiroshi Ohta ,  Kazuhiro Mochizuki ,  Hiroyuki Uchiyama

IPC分类号： H01L31/109

CPC分类号： H01L29/7371 ,  H01L29/66318

摘要： This invention is intended to provide an HBT capable of achieving, if the HBT is a collector-up HBT, the constriction of the emitter layer disposed directly under an external base layer, and reduction in base-emitter junction capacity, or if the HBT is an emitter-up HBT, reduction in base-collector junction capacity. For the collector-up HBT, window structures around the sidewalls of a collector are used to etch either the emitter layer disposed directly under the external base layer, or an emitter contact layer For the emitter-up HBT, window structures around the sidewalls of an emitter are used to etch either the collector layer disposed directly under the external base layer, or a collector contact layer. In both HBTs, the external base layer is supported by a columnar structure to ensure mechanical strength.

摘要翻译： 本发明旨在提供一种如果HBT是集电极HBT，则可以实现直接位于外部基极层下方的发射极层的收缩，以及基极 - 发射极结能量的降低，或HBT为 发射极HBT，基极 - 集电极结电容降低。 对于收集器HBT，围绕集电极侧壁的窗口结构用于蚀刻直接位于外部基极层下方的发射极层或发射极接触层。对于发射极上升HBT，围绕侧壁的窗口结构 发射极用于蚀刻直接位于外部基底层下方的集电极层或集电极接触层。 在两个HBT中，外部基层由柱状结构支撑以确保机械强度。

公开(公告)号：US5966273A

公开(公告)日：1999-10-12

申请号：US187328

申请日：1994-01-26

申请人： Hidetoshi Matsumoto ,  Hiroshi Tomiyasu

发明人： Hidetoshi Matsumoto ,  Hiroshi Tomiyasu

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/40

CPC分类号： G11B5/3903 ,  G11B5/3136 ,  G11B5/3967 ,  G11B5/40 ,  G11B5/3106 ,  G11B5/3133

摘要： In a magnetoresistive thin film head including a magnetoresistive element, lead layers for supplying a sense current to the magnetoresistive element and an insulating layer provided in the vicinity of the magnetoresistive element, the insulating layer is formed of a material which has an electrical resistivity greater than 1.times.10.sup.4 .OMEGA.cm and a thermal conductivity greater than 100 W/(mK). The insulating layer may be formed of silicon, diamond-like carbon or the like so as to have an electrical resistivity and a thermal conductivity within the ranges defined above.

摘要翻译： 在包括磁阻元件的磁阻薄膜头中，用于向磁阻元件提供感测电流的引线层和设置在磁阻元件附近的绝缘层，绝缘层由电阻率大于 1×10 4欧姆厘米，热导率大于100W /（mK）。 绝缘层可以由硅，类金刚石碳等形成，从而具有上述范围内的电阻率和导热系数。

公开(公告)号：US5571321A

公开(公告)日：1996-11-05

申请号：US327783

申请日：1994-10-20

申请人： Munehisa Yanagisawa ,  Yuuki Tamura ,  Susumu Arisaka ,  Hidetoshi Matsumoto

发明人： Munehisa Yanagisawa ,  Yuuki Tamura ,  Susumu Arisaka ,  Hidetoshi Matsumoto

IPC分类号： H01L21/208 ,  H01L21/304 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/30 ,  H01L21/20

CPC分类号： H01L33/30 ,  H01L33/0062

摘要： This disclosure herein pertains to a method for producing a GaP epitaxial wafer used for fabrication of light emitting diodes having higher brightness than light emitting diodes fabricated from a GaP epitaxial wafer produced by a conventional method have. The method comprises the steps of: preparing a GaP layered substrate 15 with one or more GaP layers on a GaP single crystal substrate 10 in the first series of liquid phase epitaxial growth; obtaining a layered GaP substrate 15a by eliminating surface irregularities of said GaP layered substrate 15 by mechano-chemical polishing to make the surface to be planar; and then forming a GaP light emitting layer composite 19 on said layered GaP substrate 15a in the second series of liquid phase epitaxial growth.

摘要翻译： 本公开内容涉及用于制造具有比通过常规方法制造的GaP外延晶片制造的发光二极管的亮度高的发光二极管的GaP外延晶片的制造方法。 该方法包括以下步骤：在第一系列液相外延生长中，在GaP单晶衬底10上制备具有一个或多个GaP层的GaP层状衬底15; 通过机械化学抛光消除所述GaP层叠基板15的表面凹凸，使表面成为平面，得到层状GaP基板15a; 然后在第二系列液相外延生长中在所述层状GaP基板15a上形成GaP发光层复合体19。

公开(公告)号：US5407858A

公开(公告)日：1995-04-18

申请号：US229690

申请日：1994-04-12

申请人： Munehisa Yanagisawa ,  Yuuki Tamura ,  Susumu Arisaka ,  Hidetoshi Matsumoto

发明人： Munehisa Yanagisawa ,  Yuuki Tamura ,  Susumu Arisaka ,  Hidetoshi Matsumoto

IPC分类号： H01L21/368 ,  C30B19/00 ,  H01L21/208 ,  H01L33/30

CPC分类号： H01L33/30 ,  C30B19/00 ,  C30B29/44 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L21/02628 ,  H01L33/0062 ,  H01L33/305

摘要： To provide a GaP red light emitting element substrate which a large amount of oxygen is doped in the p-type GaP layer, and which very few Ga.sub.2 O.sub.3 precipitates develop on and/or in p-type GaP layer, and methods of manufacturing said substrate. After the n-type GaP layer 2 is grown on the n-type GaP single crystal substrate 1, when forming the p-type GaP layer 3 doped with Zn and O, on said n-type GaP layer 2 by means of the liquid phase epitaxial growth method, the p-type GaP layer 3 is grown by using a Ga solution with a high concentration of oxygen, and said Ga solution is removed from the substrate 1 to complete the growth when the temperature is lowered to a prescribed temperature of 980.degree. C. or higher. When the temperature has reached the prescribed temperature of 980.degree. C. or higher during the growth using the Ga solution with a high concentration of oxygen, it is also possible to treat said Ga solution to decrease the concentration of the contained oxygen and then continue the growth. It is also possible to conduct the growth using the Ga solution with a high concentration of oxygen until the temperature reaches the prescribed temperature of 980.degree. C. or higher, and then, after switching the growth solution to a Ga solution with a low concentration of oxygen, continue the growth.

摘要翻译： 为了提供在p型GaP层中掺杂了大量氧的GaP红色发光元件衬底，并且在p型GaP层上和/或p型GaP层中形成非常少的Ga 2 O 3析出物，以及制造所述衬底的方法。 在n型GaP层2生长在n型GaP单晶衬底1上之后，当在所述n型GaP层2上通过液相形成掺杂有Zn和O的p型GaP层3时 通过外延生长法，通过使用高浓度的氧的Ga溶液生长p型GaP层3，并且当温度降低至规定温度为980°时，从衬底1去除所述Ga溶液以完成生长 ℃以上。 当使用高浓度氧气的Ga溶液在温度达到980℃以上的规定温度时，还可以处理所述Ga溶液以降低所含氧气的浓度，然后继续 成长。 也可以使用具有高浓度氧的Ga溶液进行生长，直到温度达到规定温度为980℃以上，然后，将生长溶液切换成低浓度的Ga溶液 氧气，继续增长。

公开(公告)号：US5362972A

公开(公告)日：1994-11-08

申请号：US686780

申请日：1991-04-17

申请人： Masamitsu Yazawa ,  Kenji Hiruma ,  Toshio Katsuyama ,  Nobutaka Futigami ,  Hidetoshi Matsumoto ,  Hiroshi Kakibayashi ,  Masanari Koguchi ,  Gerard P. Morgan ,  Kensuke Ogawa

发明人： Masamitsu Yazawa ,  Kenji Hiruma ,  Toshio Katsuyama ,  Nobutaka Futigami ,  Hidetoshi Matsumoto ,  Hiroshi Kakibayashi ,  Masanari Koguchi ,  Gerard P. Morgan ,  Kensuke Ogawa

IPC分类号： C30B25/00 ,  H01L21/20 ,  H01L21/334 ,  H01L21/335 ,  H01L21/336 ,  H01L21/34 ,  H01L29/06 ,  H01L29/12 ,  H01L29/772 ,  H01L29/775 ,  H01L29/861 ,  H01L33/18 ,  H01S5/10 ,  H01S5/34 ,  H01L33/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y20/00 ,  C30B25/005 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/125 ,  H01L29/66454 ,  H01L29/66462 ,  H01L29/66469 ,  H01L29/66522 ,  H01L29/66931 ,  H01L29/7722 ,  H01L29/775 ,  H01L29/861 ,  H01S5/341 ,  H01L27/15 ,  H01L33/18 ,  H01S5/1042

摘要： A field effect transistor and a ballistic transistor using semiconductor whiskers each having a desired diameter and formed at s desired location, a semiconductor vacuum microelectronic device using the same as electron emitting materials, a light emitting device using the same as quantum wires and the like are disclosed.

摘要翻译： 一种场效应晶体管和使用半导体晶须的弹道晶体管，每个半导体晶须具有期望的直径并形成在期望的位置，使用其作为电子发射材料的半导体真空微电子器件，使用该半导体晶须的量子线等的发光器件 披露

公开(公告)号：US09246444B2

公开(公告)日：2016-01-26

申请号：US13346925

申请日：2012-01-10

申请人： Masatoshi Hase ,  Kiichiro Takenaka ,  Hidetoshi Matsumoto ,  Shun Imai

发明人： Masatoshi Hase ,  Kiichiro Takenaka ,  Hidetoshi Matsumoto ,  Shun Imai

IPC分类号： H03F1/56 ,  H01P5/12 ,  H03F3/195 ,  H03F3/21 ,  H03F3/24 ,  H03H7/38 ,  H03H7/48

CPC分类号： H03F1/565 ,  H03F3/195 ,  H03F3/211 ,  H03F3/245 ,  H03F2203/21103 ,  H03F2203/21139 ,  H03H7/38 ,  H03H7/48

摘要： When a power amplifier mounted in mobile communications equipment, such as a mobile-phone, is composed of a balanced amplifier, technology with which the loss of the electric power composition in a power combiner can be reduced is provided. According to the technical idea of the present embodiment, by dividing an isolation capacitor element into two capacitor elements with high symmetry and coupled in parallel, it is possible to make almost equal parasitic capacitance arising from these capacitor elements, even when the capacitor elements are formed as interlayer capacitor elements of the wiring substrate.

摘要翻译： 当安装在诸如移动电话的移动通信设备中的功率放大器由平衡放大器组成时，提供了可以减少功率组合器中的电力组成的损失的技术。 根据本实施例的技术思想，通过将隔离电容器元件分成两个高对称性并联并联的电容器元件，即使形成电容器元件，也可以使由这些电容器元件产生的几乎相等的寄生电容 作为布线基板的层间电容器元件。

公开(公告)号：US08229373B2

公开(公告)日：2012-07-24

申请号：US11430172

申请日：2006-05-09

申请人： Tomonori Tanoue ,  Hidetoshi Matsumoto

发明人： Tomonori Tanoue ,  Hidetoshi Matsumoto

IPC分类号： H01Q11/12

CPC分类号： H03G3/3042 ,  H03F1/0261 ,  H03F3/191 ,  H03F3/24 ,  H03F2200/105 ,  H03F2200/207 ,  H03F2200/294 ,  H03F2200/372 ,  H03F2200/471 ,  H03F2200/99

摘要： A high frequency power amplifier maintains an excellent linearity regardless of a fluctuation of a load impedance and is downsized. The high frequency power amplifier detects an AC voltage amplitude at an output terminal of a final amplification stage transistor, and suppresses an input signal amplitude of a power amplifier when the voltage amplitude exceeds a predetermined threshold value.

公开(公告)号：US20110221885A1

公开(公告)日：2011-09-15

申请号：US13112576

申请日：2011-05-20

申请人： Toshihiko SUZUKI ,  Hidetoshi Matsumoto ,  Munehisa Kato ,  Makoto Kurumisawa

发明人： Toshihiko SUZUKI ,  Hidetoshi Matsumoto ,  Munehisa Kato ,  Makoto Kurumisawa

IPC分类号： H04N7/18

CPC分类号： G01N21/958 ,  G01N21/21 ,  G01N2021/8816 ,  G01N2021/8967

摘要： A transparent body inspecting device includes: a light application unit for applying light to a transparent body; an image capturing unit which captures an image of the transparent body and in which a depth of field is smaller than a height of the transparent body; an image capture driving unit for moving the image capturing unit in a direction in which the image capturing unit is brought close to the transparent body and in a direction in which the image capturing unit is brought away from the transparent body; and a defect determining unit for determining existence or nonexistence of a defect in the transparent body based on whether or not brightness of pixels in the image captured by the image capturing unit is nonuniform, wherein: the image capturing unit carries out image capture more than once while moving in the direction in which the image capturing unit is brought close to the transparent body or in the direction in which the image capturing unit is brought away from the transparent body; and when the brightness of pixels in the image captured by the image capturing unit is nonuniform, the defect determining unit determines that a defect exists within the depth of field at the time of capture of this image.

摘要翻译： 透明体检查装置包括：将光施加到透明体的光施加单元; 拍摄所述透明体的图像并且其中景深小于所述透明体的高度的图像拍摄单元; 图像拍摄驱动单元，用于使图像拍摄单元沿着使图像拍摄单元靠近透明体的方向以及使图像拍摄单元从透明体离开的方向移动; 以及缺陷确定单元，用于基于由所述图像捕获单元捕获的图像中的像素的亮度是否不均匀来确定所述透明体中的缺陷的存在或不存在，其中：所述图像捕获单元执行不止一次的图像捕获 同时沿着图像拍摄单元靠近透明体的方向或者使图像拍摄单元从透明体离开的方向移动; 并且当由图像拍摄单元拍摄的图像中的像素的亮度不均匀时，缺陷确定单元确定在拍摄该图像时在景深内存在缺陷。

公开(公告)号：US07547929B2

公开(公告)日：2009-06-16

申请号：US11247234

申请日：2005-10-12

申请人： Kenichi Tanaka ,  Hidetoshi Matsumoto ,  Isao Ohbu ,  Kazuhiro Mochizuki ,  Tomonori Tanoue ,  Chisaki Takubo ,  Hiroyuki Uchiyama

发明人： Kenichi Tanaka ,  Hidetoshi Matsumoto ,  Isao Ohbu ,  Kazuhiro Mochizuki ,  Tomonori Tanoue ,  Chisaki Takubo ,  Hiroyuki Uchiyama

IPC分类号： H01L29/40

CPC分类号： H01L23/482 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/16152 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： The present invention provides a semiconductor device which comprises active components, passive components, wiring lines and electrodes and are satisfactory in terms of mechanical strength, miniaturization and thermal stability. In the semiconductor device, openings are formed just below active components. These openings are filled with conductor layers. Conductor layers are also formed where openings are not formed.

摘要翻译： 本发明提供一种半导体器件，其包括有源部件，无源部件，布线和电极，并且在机械强度，小型化和热稳定性方面令人满意。 在半导体器件中，开口形成在活性部件的正下方。 这些开口填充有导体层。 还形成了未形成开口的导体层。

公开(公告)号：US20070046370A1

公开(公告)日：2007-03-01

申请号：US11489609

申请日：2006-07-20

申请人： Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Isao Ohbu

发明人： Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Isao Ohbu

IPC分类号： H03G3/10

CPC分类号： H03G3/3042 ,  H03F1/30 ,  H03F3/189 ,  H03F3/68 ,  H03G3/3047

摘要： In a base-bias-control-type high-frequency power amplifier with a plural stage configuration, a rising voltage of a base bias current supplied to an initial stage transistor is made lower than a rising voltage of a base bias current supplied to a second stage transistor by a bias circuit, and a difference between the both voltages is set to be smaller than a base-emitter voltage of an amplifying stage transistor. Also, a rising voltage of a base bias current supplied to a third stage transistor is made equal to the rising voltage of the base bias current supplied to an initial stage transistor. Accordingly, a technology capable of improving the power control linearity can be provided in a high-frequency power amplifier used in a polar-loop transmitter or the like.

摘要翻译： 在具有多级配置的基极偏置控制型高频功率放大器中，使提供给初级级晶体管的基极偏置电流的上升电压低于提供给第二级的基极偏置电流的上升电压 并且两个电压之间的差被设置为小于放大级晶体管的基极 - 发射极电压。 此外，使提供给第三级晶体管的基极偏置电流的上升电压等于提供给初级晶体管的基极偏置电流的上升电压。 因此，能够提高功率控制线性度的技术能够在用于极环回路发送机等的高频功率放大器中提供。