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    METHOD AND SYSTEM FOR INSPECTING AN EUV MASK
    51.
    发明申请
    METHOD AND SYSTEM FOR INSPECTING AN EUV MASK 有权
    检查防毒面具的方法和系统

    公开(公告)号：US20150102220A1

    公开(公告)日：2015-04-16

    申请号：US14575102

    申请日：2014-12-18

    申请人： Hermes Microvision Inc.

    发明人： Guoching Weng ,  Youjin Wang ,  Chiyan Kuan ,  Chung-Shih Pan

    IPC分类号： H05F3/02 ,  H01J37/20 ,  H01J37/26

    CPC分类号： G01N23/2251 ,  H01J37/026 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/004 ,  H01J2237/0041 ,  H01J2237/0044 ,  H01J2237/2007 ,  H01J2237/2008 ,  H01J2237/202 ,  H01J2237/2448 ,  H01J2237/2602 ,  H01J2237/2811 ,  H01J2237/2813 ,  H05F3/02

    摘要： A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

    摘要翻译： 提供一种用于接地极紫外线掩模（EUV掩模）的结构，用于通过电子束检查工具在检查期间对EUV掩模进行放电。 用于将EUV掩模接地的结构包括至少一个接地引脚以接触EUV掩模上的导电区域，其中EUV掩模可以在侧壁或/或背侧上具有另外的导电层。 通过使用电子束检查系统来增强EUV掩模的检查质量，因为EUV掩模上的累积充电是接地的。 通过同时使用电子束扫描连续移动台上的EUV掩模的反射表面。 舞台的移动方向垂直于电子束的扫描方向。

    ION Implantation with Charge and Direction Control
    52.
    发明申请
    ION Implantation with Charge and Direction Control 有权
    离子注入与充电和方向控制

    公开(公告)号：US20150069913A1

    公开(公告)日：2015-03-12

    申请号：US14541314

    申请日：2014-11-14

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC分类号： H01J37/317

    CPC分类号： H01J37/3171 ,  H01J3/02 ,  H01J3/022 ,  H01J3/26 ,  H01J37/026 ,  H01J37/06 ,  H01J2237/0041 ,  H01J2237/31705

    摘要： The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.

    摘要翻译： 本公开提供了控制电子发射的各种有利的方法和装置。 本公开的更广泛形式之一涉及电子发射元件，其包括电子发射器，其包括设置在栅电极和阴极之间的电子发射区。 阳极设置在电子发射区域的上方，并且在阳极上设置电压组。 施加在栅电极和阴极之间的第一电压控制从电子发射区产生的电子量。 施加到阳极的第二电压提取产生的电子。 施加到电压组的第三电压控制通过阳极提取的电子的方向。

    Apparatus and method for surface modification using charged particle beams
    54.
    发明授权
    Apparatus and method for surface modification using charged particle beams 有权
    使用带电粒子束进行表面改性的装置和方法

    公开(公告)号：US08552406B2

    公开(公告)日：2013-10-08

    申请号：US13030768

    申请日：2011-02-18

    申请人： Michael William Phaneuf ,  Ken Guillaume Lagarec ,  Alexander Krechmer

    发明人： Michael William Phaneuf ,  Ken Guillaume Lagarec ,  Alexander Krechmer

    IPC分类号： G21K5/00

    CPC分类号： H01J37/026 ,  H01J2237/0041 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/67109 ,  Y10T29/49002

    摘要： An apparatus and method for using high beam currents in FIB circuit edit operations, without the generation of electrostatic discharge events. An internal partial chamber is disposed over the circuit to be worked on by the FIB. The partial chamber has top and bottom apertures for allowing the ion beam to pass through, and receives a gas through a gas delivery nozzle. A non-reactive gas, or a combination of a non-reactive gas and a reactive gas, is added to the FIB chamber via the partial chamber, until the chamber reaches a predetermined pressure. At the predetermined pressure, the gas pressure in the partial chamber will be much greater than that of the chamber, and will be sufficiently high such that the gas molecules will neutralize charging induced by the beam passing through the partial chamber.

    摘要翻译： 在FIB电路编辑操作中使用远光束电流的装置和方法，而不产生静电放电事件。 内部部分腔室设置在FIB加工的电路上。 部分室具有用于允许离子束通过的顶部和底部孔，并且通过气体输送喷嘴接收气体。 通过部分室将非反应性气体或非反应性气体和反应性气体的组合添加到FIB室中，直到室达到预定压力。 在预定压力下，部分室中的气体压力将远大于室的气体压力，并且将足够高，使得气体分子将中和通过部分室的光束引起的带电。

    Charged particle beam inspection apparatus and inspection method using charged particle beam
    55.
    发明授权
    Charged particle beam inspection apparatus and inspection method using charged particle beam 有权
    带电粒子束检查装置和带电粒子束的检查方法

    公开(公告)号：US08507857B2

    公开(公告)日：2013-08-13

    申请号：US12653013

    申请日：2009-12-07

    申请人： Keisuke Itou ,  Toshimichi Iwai

    发明人： Keisuke Itou ,  Toshimichi Iwai

    IPC分类号： G21K7/00

    CPC分类号： H01J37/28 ,  G01B15/00 ,  H01J37/20 ,  H01J37/266 ,  H01J2237/0041 ,  H01J2237/10

    摘要： A charged particle beam inspection apparatus includes: an electron gun emitting an electron beam; first and second condenser lenses used to focus the electron beam; a beam control panel disposed between the first and second condenser lenses; and a control unit performing stabilizing processing in which excitation currents respectively supplied to the first condenser lens and the second condenser lens are set to have predetermined values, thereby the current amount of the electron beam passing through an opening of the beam control panel is regulated so that the electron beam to be emitted onto the sample has a larger current amount than that at a measurement, and then the electron beam is emitted onto the sample for a predetermined time period. After the stabilizing processing, the control unit sets the values of the excitation currents back to values for the measurement in order to measure dimensions of the sample, the excitation currents respectively supplied to the first and second condenser lenses.

    摘要翻译： 带电粒子束检查装置包括：发射电子束的电子枪; 用于聚焦电子束的第一和第二聚光透镜; 设置在第一和第二聚光透镜之间的光束控制面板; 以及执行稳定处理的控制单元，其中分别提供给第一聚光透镜和第二聚光透镜的激励电流被设置为具有预定值，从而将通过光束控制面板的开口的电子束的电流量调节为 要发射到样品上的电子束具有比测量时更大的电流量，然后电子束在样品上发射预定时间段。 在稳定处理之后，控制单元将激励电流的值设置为测量值，以便测量样品的尺寸，分别提供给第一和第二聚光透镜的激励电流。

    STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK
    56.
    发明申请
    STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK 有权
    用于排放超极本超薄膜的结构

    公开(公告)号：US20120292509A1

    公开(公告)日：2012-11-22

    申请号：US13112536

    申请日：2011-05-20

    申请人： You-Jin WANG ,  Chiyan KUAN ,  Chung-Shih PAN

    发明人： You-Jin WANG ,  Chiyan KUAN ,  Chung-Shih PAN

    IPC分类号： H01J37/26 ,  H05F3/02

    CPC分类号： H05F3/02 ,  G01N23/2251 ,  H01J37/026 ,  H01J37/20 ,  H01J2237/0041 ,  H01J2237/0044 ,  H01J2237/2008 ,  H01J2237/2811

    摘要： A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.

    摘要翻译： 提供一种用于放电极紫外线掩模（EUV掩模）的结构，用于通过电子束检查工具在检查期间对EUV掩模进行放电。 用于放电EUV掩模的结构包括至少一个接触引脚以接触EUV掩模上的导电区域，其中EUV掩模可以在侧壁或/或底部上具有另外的导电层。 通过使用电子束检查系统来增强EUV掩模的检查质量，因为EUU掩模上的累积充电是接地的。

    Apparatus and method for processing substrate using neutralized beams including applying a voltage to a substrate support
    57.
    发明授权
    Apparatus and method for processing substrate using neutralized beams including applying a voltage to a substrate support 有权
    用于使用中和束处理衬底的装置和方法，包括向衬底支撑件施加电压

    公开(公告)号：US08089042B2

    公开(公告)日：2012-01-03

    申请号：US12323783

    申请日：2008-11-26

    申请人： Do-Haing Lee ,  Ha-Na Kim ,  Yong-Jin Kim

    发明人： Do-Haing Lee ,  Ha-Na Kim ,  Yong-Jin Kim

    IPC分类号： H05H3/02

    CPC分类号： H01J37/30 ,  H01J2237/0041 ,  H01J2237/04756 ,  H01J2237/20 ,  H01J2237/31

    摘要： An apparatus and method for processing a substrate using neutralized beams are provided. A substrate processing apparatus includes an ion source generating device configured to form an ion source. An ion extraction device is configured to extract and accelerate ions from the ion source. An ion neutralizing device is configured to convert the ions extracted and accelerated from the ion extraction device into neutralized beams. A remaining portion of the ions extracted and accelerated from the ion extraction device is not converted into the neutralized beams. A substrate support is configured to support a substrate such that the neutralized beams are directed towards the substrate support. A substrate power supply is configured to apply a voltage to the substrate support such that the remaining portion of the ions that is not converted into the neutralized beams is directed away from the substrate support by the applied voltage of the substrate.

    摘要翻译： 提供了一种使用中和束来处理衬底的设备和方法。 衬底处理装置包括被配置为形成离子源的离子源生成装置。 离子提取装置被配置为从离子源提取和加速离子。 离子中和装置被配置为将从离子提取装置提取和加速的离子转化成中和的束。 从离子提取装置提取和加速的离子的剩余部分不被转换成中和的束。 衬底支撑件被配置为支撑衬底，使得中和的光束被引向衬底支撑件。 衬底电源被配置为向衬底支撑件施加电压，使得未转换成中和束的离子的剩余部分通过衬底的施加电压被引导离开衬底支撑。

    METHODS FOR PERFORMING CIRCUIT EDIT OPERATIONS WITH LOW LANDING ENERGY ELECTRON BEAMS
    59.
    发明申请
    METHODS FOR PERFORMING CIRCUIT EDIT OPERATIONS WITH LOW LANDING ENERGY ELECTRON BEAMS 有权
    低能耗电子束执行电路编辑操作的方法

    公开(公告)号：US20110204263A1

    公开(公告)日：2011-08-25

    申请号：US12092783

    申请日：2006-11-07

    申请人： Michael William Phaneuf ,  Ken Guillaume Lagarec ,  Alexander Krechmer

    发明人： Michael William Phaneuf ,  Ken Guillaume Lagarec ,  Alexander Krechmer

    IPC分类号： G21K5/00

    CPC分类号： H01J37/026 ,  H01J2237/0041 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/67109 ,  Y10T29/49002

    摘要： Methods for using sub-100V electron beam landing energies for performing circuit edit operations. Circuit edit operations can include imaging for navigation and etching in the presence of a suitable gas. Low landing energies can be obtained by modifying a decelerator system of native FESEM equipment, or by using biasing means near the sample surface for decelerating electrons of the primary beam. At low landing energies near the operating voltage of a semiconductor circuit, voltage contrast effects can be visually seen for enhancing operator navigation. Low landing energies can be used during etching processes for minimizing the interaction volume of the beam and obtaining accurate and localized etching.

    摘要翻译： 使用亚100V电子束着陆能量进行电路编辑操作的方法。 电路编辑操作可以包括在存在合适气体的情况下用于导航和蚀刻的成像。 通过修改天然FESEM设备的减速器系统，或者通过在样品表面附近使用偏置装置来减速主梁的电子，可以获得低着陆能量。 在靠近半导体电路的工作电压的低着陆能量下，可以看到电压对比效应，以增强操作者导航。 在蚀刻过程中可以使用低着陆能量来最小化光束的相互作用体积并获得精确和局部化的蚀刻。