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    METHOD FOR SPUTTERING SYSTEM AND USING COUNTERWEIGHT
    52.
    发明申请
    METHOD FOR SPUTTERING SYSTEM AND USING COUNTERWEIGHT 审中-公开
    溅射系统和使用方法

    公开(公告)号：US20160177438A1

    公开(公告)日：2016-06-23

    申请号：US15053997

    申请日：2016-02-25

    申请人： Intevac, Inc.

    发明人： Vinay Shah ,  Alexandru Riposan ,  Terry Bluck

    IPC分类号： C23C14/35 ,  H01J37/34 ,  C23C14/56

    CPC分类号： C23C14/351 ,  C23C14/35 ,  C23C14/56 ,  H01J37/32779 ,  H01J37/32899 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3452 ,  H01J37/3455 ,  H01J2237/202 ,  H01J2237/3323

    摘要： A method for depositing material from a target onto substrates, comprising using a processing chamber; a sputtering target having length L and having sputtering material provided on front surface thereof; a magnet operable to reciprocally scan across the length L in close proximity to rear surface of the target; and a counterweight operable to reciprocally scan at same speed but opposite direction of the magnet; and moving the magnets at speeds at least several times faster than the speed of the substrates.

    摘要翻译： 一种用于将材料从靶材沉积到基板上的方法，包括使用处理室; 具有长度L并在其前表面上设置有溅射材料的溅射靶; 一个磁铁可操作以在紧邻目标的后表面的整个长度L上往复扫描; 以及配重可操作以在磁体的相同速度但相反的方向上往复扫描; 并以比基片的速度至少几倍的速度移动磁体。

    Copper substrate for deposition of graphene
    54.
    发明授权
    Copper substrate for deposition of graphene 有权
    用于沉积石墨烯的铜基底

    公开(公告)号：US09322096B2

    公开(公告)日：2016-04-26

    申请号：US13817533

    申请日：2012-05-25

    申请人： Thomas A. Yager ,  Joshua Robinson

    发明人： Thomas A. Yager ,  Joshua Robinson

    IPC分类号： C23C16/00 ,  C23C16/26 ,  C23C16/02 ,  C23C16/54

    CPC分类号： C01B31/0453 ,  C01B32/186 ,  C23C14/022 ,  C23C14/14 ,  C23C14/34 ,  C23C14/545 ,  C23C16/0281 ,  C23C16/26 ,  C23C16/52 ,  C23C16/545 ,  H01J37/3426 ,  H01J37/347 ,  H01J37/3476 ,  H01J2237/022 ,  H01J2237/081 ,  H01J2237/24578 ,  H01J2237/2487 ,  H01J2237/3323 ,  Y10T428/265 ,  Y10T428/30

    摘要： Technologies are presented for growing graphene by chemical vapor deposition (CVD) on a high purity copper surface. The surface may be prepared by deposition of a high purity copper layer on a lower purity copper substrate using deposition processes such as sputtering, evaporation, electroplating, or CVD. The deposition of the high purity copper layer may be followed by a thermal treatment to facilitate grain growth. Use of the high purity copper layer in combination with the lower purity copper substrate may provide thermal expansion matching, compatibility with copper etch removal, or reduction of contamination, producing fewer graphene defects compared to direct deposition on a lower purity substrate at substantially less expense than deposition approaches using a high purity copper foil substrate.

    摘要翻译： 介绍了通过化学气相沉积（CVD）在高纯度铜表面上生长石墨烯的技术。 表面可以通过使用诸如溅射，蒸发，电镀或CVD的沉积工艺在高纯度铜基底上沉积高纯度铜层来制备。 高纯度铜层的沉积之后可以进行热处理以促进晶粒生长。 与较低纯度的铜基底结合使用高纯度铜层可以提供热膨胀匹配，与铜蚀刻去除的相容性，或减少污染，产生较少的石墨烯缺陷，与直接沉积在较低纯度的基底上相比，费用低得多 使用高纯度铜箔衬底的沉积方法。

    SPUTTERING APPARATUS
    55.
    发明申请
    SPUTTERING APPARATUS 有权
    溅射装置

    公开(公告)号：US20160042928A1

    公开(公告)日：2016-02-11

    申请号：US14921883

    申请日：2015-10-23

    申请人： CANON ANELVA CORPORATION

    发明人： Satoshi YAMADA ,  Ryuji HIGASHISAKA

    IPC分类号： H01J37/34

    CPC分类号： H01J37/347 ,  C23C14/35 ,  C23C14/568 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3435 ,  H01J37/3455 ,  H01J37/3476 ,  H01J2237/20235 ,  H01J2237/24564 ,  H01J2237/24578 ,  H01J2237/3323

    摘要： A sputtering apparatus includes a vacuum chamber, a substrate holder, a target support member, a cathode magnet arranged on a side of the target support member, which is opposite to a side of a substrate held by the substrate holder, a magnet moving unit configured to adjust a distance between the cathode magnet and the target support member, a target moving unit configured to adjust a distance between the target support member and the substrate, and a control unit configured to control the target moving unit and the magnet moving unit.

    摘要翻译： 溅射装置包括：真空室，基板保持架，目标支撑部件，配置在目标支撑部件侧的与由基板支架保持的基板侧相对的阴极;磁体移动部， 调整阴极磁体和目标支撑部件之间的距离，被配置为调整目标支撑部件和基板之间的距离的目标移动部件，以及被配置为控制目标移动部件和磁体移动部件的控制部。

    METHOD AND SYSTEM FOR MAINTAINING AN EDGE EXCLUSION SHIELD
    56.
    发明申请
    METHOD AND SYSTEM FOR MAINTAINING AN EDGE EXCLUSION SHIELD 有权
    维护边缘防护罩的方法和系统

    公开(公告)号：US20150303041A1

    公开(公告)日：2015-10-22

    申请号：US14440943

    申请日：2012-11-15

    申请人： Ralph LINDENBERG ,  Erkan KOPARAL

    发明人： Ralph LINDENBERG ,  Erkan KOPARAL

    IPC分类号： H01J37/34

    CPC分类号： H01J37/3441 ,  C23C14/042 ,  C23C14/50 ,  C23C14/564 ,  C23C14/568 ,  C23C16/042 ,  C23C16/4401 ,  H01J2237/3323 ,  H01L21/67173 ,  H01L21/67751 ,  H01L21/6776

    摘要： A method for extracting a shielding element from a processing chamber of a substrate processing system or inserting the shielding element into the processing chamber is provided. The substrate processing system includes the processing chamber, a first shielding element for excluding application of material onto parts of a substrate, and a substrate transportation system for transporting substrates or substrate carriers into and out of the processing chamber. The method includes transporting the first shielding element by the substrate transportation system.

    摘要翻译： 提供了一种从基板处理系统的处理室中提取屏蔽元件或将屏蔽元件插入处理室的方法。 基板处理系统包括处理室，用于排除将材料施加到基板的部件上的第一屏蔽元件和用于将基板或基板载体输入和移出处理室的基板输送系统。 该方法包括通过基板输送系统输送第一屏蔽元件。

    TUNABLE MULTI-ZONE GAS INJECTION SYSTEM
    57.
    发明申请
    TUNABLE MULTI-ZONE GAS INJECTION SYSTEM 审中-公开
    可控多区域气体注入系统

    公开(公告)号：US20150235811A1

    公开(公告)日：2015-08-20

    申请号：US14703066

    申请日：2015-05-04

    申请人： Lam Research Corporation

    发明人： David J. Cooperberg ,  Vahid Vahedi ,  Douglas Ratto ,  Harmeet Singh ,  Neil Benjamin

    IPC分类号： H01J37/32 ,  H01L21/311 ,  H01L21/3213

    CPC分类号： H01J37/32449 ,  C23C16/45574 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/3323 ,  H01J2237/3344 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137

    摘要： A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.

    摘要翻译： 一种用于等离子体处理系统的可调多区域注入系统，用于诸如半导体晶片的衬底的等离子体处理。 喷射器可以包括轴向出口，其以第一流量向中心区域供应处理气体，并且离轴出口以相同的处理气体以第二流量供应到围绕中心区域的环形区域。 该装置允许气体输送的修改以通过允许独立调节气体流到腔室中的多个区域来满足特定处理状态的需要。 此外，与消耗式喷头装置相比，可以更容易且经济地更换可移除安装的气体喷射器。

    Electronic device manufacturing method and sputtering method
    58.
    发明授权
    Electronic device manufacturing method and sputtering method 有权
    电子器件制造方法和溅射法

    公开(公告)号：US09090974B2

    公开(公告)日：2015-07-28

    申请号：US13596734

    申请日：2012-08-28

    申请人： Nobuo Yamaguchi ,  Kazuaki Matsuo

    发明人： Nobuo Yamaguchi ,  Kazuaki Matsuo

    IPC分类号： C23C14/34 ,  C23C14/50 ,  H01J37/34

    CPC分类号： H01J37/3441 ,  C23C14/0068 ,  C23C14/3407 ,  C23C14/35 ,  C23C14/50 ,  C23C14/505 ,  C23C14/564 ,  H01J37/3405 ,  H01J37/3447 ,  H01J2237/3323

    摘要： An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate.

    摘要翻译： 一种电子设备制造方法，包括：第一步骤，使基板保持器靠近第一屏蔽部件移动，并且定位形成在第一屏蔽部件上的具有环形的第一突出部分和具有环形的第二突出部分，并形成在 第二屏蔽构件，其安装在基板保持件的表面上，在基板的外周部分处于非接触状态下彼此接合的位置;第二步骤，在第一步骤之后，溅射靶，同时保持第一突出 部分和第二突出部分在非接触状态下彼此接合的位置，以及第三步骤，在第二步骤之后，将第一屏蔽构件设置在打开状态，并溅射靶以在基板上进行沉积。

    Tunable multi-zone gas injection system
    59.
    发明授权
    Tunable multi-zone gas injection system 有权

    公开(公告)号：US09051647B2

    公开(公告)日：2015-06-09

    申请号：US12605027

    申请日：2009-10-23

    申请人： David J. Cooperberg ,  Valid Vahedi ,  Douglas Ratto ,  Harmeet Singh ,  Neil Benjamin

    发明人： David J. Cooperberg ,  Valid Vahedi ,  Douglas Ratto ,  Harmeet Singh ,  Neil Benjamin

    IPC分类号： H01L21/306 ,  C23C16/00 ,  C23C16/455 ,  C23C16/507 ,  H01J37/32

    CPC分类号： C23C16/45574 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/3323 ,  H01J2237/3344

    摘要： A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector fixed to part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas at adjustable flow rates to multiple zones of the chamber, and an RF energy source such as a planar or non-planar spiral coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.