公开(公告)号：US09123978B2

公开(公告)日：2015-09-01

申请号：US14339743

申请日：2014-07-24

Applicant: STMicroelectronics SA

Inventor： Jochen Langheim

IPC: H01M10/48 ,  H01M2/20 ,  H01M2/34

CPC classification number: H01M10/48 ,  H01M2/20 ,  H01M2/34 ,  H01M2/348 ,  H01M10/488 ,  H01M2200/00 ,  H01M2220/20

Abstract: A method includes coupling two conducting rods between terminals of a battery cell of a battery having several branches coupled in parallel, each branch having several battery cells coupled in series. A force tending to squeeze the rods against each other is applied, with the rods being held apart from each other using an insulating block. At least one operating state signal of the cell is monitored, and the insulating block is removed based on the monitoring, allowing the rods to come into electrical contact and short-circuit the battery cell.

Abstract translation: 一种方法包括在具有并联耦合的多个分支的电池的电池单体的端子之间耦合两个导电棒，每个分支具有串联耦合的多个电池单元。 施加倾向于彼此挤压杆的力，使用绝缘块将杆彼此分离。 监测电池的至少一个操作状态信号，并且基于监测来去除绝缘块，从而允许电极接触并使电池电池短路。

公开(公告)号：US20150155175A1

公开(公告)日：2015-06-04

申请号：US14555926

申请日：2014-11-28

Applicant: Commissariat A L'energie Atomique Et Aux Ene Alt ,  STMicroelectronics SA

Inventor： Aomar HALIMAOUI ,  Laurent VANDROUX

IPC: H01L21/288 ,  H01L21/768

CPC classification number: H01L21/288 ,  C23C18/1644 ,  C23C18/1879 ,  C23C18/1882 ,  C23C18/36 ,  C23C18/40 ,  C23C18/44 ,  H01L21/76879

Abstract: Metallization method for a porous material including deposition of a metallic material in the liquid phase using a solution containing metal ions, the conditions consisting of the solution temperature, the pH of the solution, and the concentration of metal ions in solution being chosen to result in a deposition rate of the metallic material less than or equal to 0.1 nm/min.

Abstract translation: 多孔材料的金属化方法，包括使用含有金属离子的溶液在液相中沉积金属材料，由溶液温度，溶液的pH和溶液中的金属离子的浓度组成的条件被选择以导致 金属材料的沉积速度小于或等于0.1nm / min。

公开(公告)号：US20150097241A1

公开(公告)日：2015-04-09

申请号：US14505570

申请日：2014-10-03

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Denis Rideau ,  Elise Baylac ,  Emmanuel Richard ,  Francois Andrieu

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/10 ,  H01L29/786

CPC classification number: H01L21/84 ,  H01L21/76283 ,  H01L21/823412 ,  H01L21/823481 ,  H01L27/1218 ,  H01L27/1262 ,  H01L27/127 ,  H01L29/1033 ,  H01L29/1037 ,  H01L29/1054 ,  H01L29/66742 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/78603

Abstract: The transverse mechanical stress within the active region of a MOS transistor is relaxed by forming an insulating incursion, such as an insulated trench, within the active region of the MOS transistor. The insulated incursion is provided at least in a channel region of the MOS transistor so as to separate the channel region into two parts. The insulated incursion is configured to extend in a direction of a length of the MOS transistor. The insulated incursion may further extend into one or more of a source region or drain region located adjacent the channel region of the MOS transistor.

Abstract translation: MOS晶体管的有源区内的横向机械应力通过在MOS晶体管的有源区内形成诸如绝缘沟槽的绝缘侵入来松弛。 绝缘侵入至少在MOS晶体管的沟道区域中提供，以将沟道区分成两部分。 绝缘侵入被配置为在MOS晶体管的长度方向上延伸。 绝缘侵入可以进一步延伸到与MOS晶体管的沟道区相邻的源区或漏区中的一个或多个。

公开(公告)号：US09000963B2

公开(公告)日：2015-04-07

申请号：US14293119

申请日：2014-06-02

Applicant: STMicroelectronics SA ,  STMicroelectronics International N.V.

Inventor： Pratap Narayan Singh ,  Stéphane Le Tual

IPC: H03M1/00 ,  H03K17/22 ,  H03M1/12 ,  H03K17/14 ,  H03K17/687

CPC classification number: H03K17/223 ,  H03K17/145 ,  H03K17/687 ,  H03K2217/0018 ,  H03M1/12

Abstract: The invention concerns a circuit comprising: a first transistor (102) having first and second main current nodes, and a gate node adapted to receive a first timing signal (CLK) for causing the first transistor to transition between conducting and non-conducting states; a biasing circuit (108) coupled to a further node of said first transistor; and a control circuit (110) adapted to control said biasing circuit to apply a first control voltage (VCTRL) to said further node to adjust the timing of at least one of said transitions.

Abstract translation: 本发明涉及一种电路，包括：具有第一和第二主电流节点的第一晶体管（102）和适于接收用于使第一晶体管在导通状态与非导通状态之间转变的第一定时信号（CLK）的栅极节点; 偏置电路（108），耦合到所述第一晶体管的另一节点; 以及适于控制所述偏置电路以对所述另一节点施加第一控制电压（VCTRL）以调整至少一个所述转换的定时的控制电路（110）。

公开(公告)号：US08994172B2

公开(公告)日：2015-03-31

申请号：US13873103

申请日：2013-04-29

Applicant: STMicroelectronics SA

Inventor： Sylvain Joblot ,  Pierre Bar

IPC: H01L23/48 ,  H01L23/28 ,  H01L21/768 ,  H01L23/538 ,  H01L23/14 ,  H01L23/498 ,  H01L21/48

CPC classification number: H01L23/28 ,  H01L21/486 ,  H01L21/76877 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49822 ,  H01L23/5384 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00

Abstract: A chip provided with through vias wherein the vias are formed of an opening with insulated walls coated with a conductive material and filled with an easily deformable insulating material, elements of connection to another chip being arranged in front of the easily deformable insulating material.

Abstract translation: 具有通孔的芯片，其中通孔由具有绝缘壁的开口形成，绝缘壁涂覆有导电材料，并且填充有易变形的绝缘材料，与另一芯片的连接元件布置在容易变形的绝缘材料的前面。

公开(公告)号：US08989272B2

公开(公告)日：2015-03-24

申请号：US14154057

申请日：2014-01-13

Applicant: STMicroelectronics SA

Inventor： Marina Nicolas

IPC: H04N7/12 ,  H04N11/02 ,  H04N11/04 ,  H04N5/14 ,  H04N19/51 ,  H04N19/513 ,  H04N19/56 ,  H04N7/01

CPC classification number: H04N19/00703 ,  H04N5/145 ,  H04N7/014 ,  H04N19/51 ,  H04N19/521 ,  H04N19/56

Abstract: A motion estimation method and device are provided for processing images to be inserted, between a preceding original image and a following original image, into a sequence of images. Each image is divided into pixel blocks associated with motion vectors. For a current block of an image being processed, motion vectors associated with blocks of the image being processed and/or associated with blocks of a processed image are selected. Candidate vectors are generated from selected motion vectors. An error is calculated for each candidate vector. A penalty is determined for a subset of candidate vectors on the basis of the values of the pixels of the pixel block in the preceding original image from which the candidate motion vector points to the current block and/or on the basis of the values of the pixels of the pixel block in the following original image to which the candidate motion vector points from the current block.

Abstract translation: 提供了一种运动估计方法和装置，用于将先前的原始图像和下一个原始图像之间插入的图像处理成图像序列。 每个图像被分成与运动矢量相关联的像素块。 对于正在处理的图像的当前块，选择与被处理图像的块正在处理和/或关联的图像的块相关联的运动矢量。 从选定的运动矢量生成候选向量。 为每个候选向量计算一个错误。 基于候选运动矢量指向当前块的先前原始图像中的像素块的像素值和/或基于当前块的值，确定候选矢量子集的惩罚 下一原始图像中的像素块的像素，候选运动矢量指向的当前块。

公开(公告)号：US20150077888A1

公开(公告)日：2015-03-19

申请号：US14475683

申请日：2014-09-03

Applicant: STMicroelectronics SA

Inventor： Philippe Galy ,  Johan Bourgeat

IPC: H02H9/04

CPC classification number: H02H9/046 ,  H01L27/0262 ,  H01L27/0277 ,  H01L29/7436 ,  H02H9/044

Abstract: A device includes a transistor configured for operating in a hybrid mode, an element configured for generating and injecting a current into the substrate of the transistor in the presence of an ESD pulse, and a thyristor triggerable at least by the element.

Abstract translation: 一种器件包括被配置为以混合模式操作的晶体管，被配置为在存在ESD脉冲的情况下产生并注入到晶体管的衬底中的元件以及至少可被该元件触发的晶闸管。

公开(公告)号：US20150075749A1

公开(公告)日：2015-03-19

申请号：US14487758

申请日：2014-09-16

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Stephane Monfray ,  Sandrine Lhostis ,  Christophe Maitre ,  Olga Kokshagina ,  Philippe Coronel

IPC: H05K1/02 ,  F28F27/02 ,  F28D9/00

CPC classification number: H05K1/0203 ,  F28D9/0062 ,  F28F27/02 ,  H01L23/473 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit chip cooling device includes a network of micropipes. A first pipe portion and a second pipe portion of the network are connected by at least one valve. The valve is formed of a bilayer strip. In response to change in temperature, the shape of the bilayer strip changes to move the valve from a substantially closed position to an open position. In one configuration, the change is irreversible. In another configuration, the change is reversible in response to an opposite change in temperature.

Abstract translation: 集成电路芯片冷却装置包括微孔网络。 网络的第一管部分和第二管部分通过至少一个阀连接。 阀由双层条形成。 响应于温度的变化，双层带的形状改变以将阀从基本上关闭的位置移动到打开位置。 在一个配置中，更改是不可逆转的。 在另一种配置中，响应于相反的温度变化，该变化是可逆的。

公开(公告)号：US08975730B2

公开(公告)日：2015-03-10

申请号：US13622573

申请日：2012-09-19

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Didier Dutartre ,  Michel Marty ,  Sebastien Jouan

IPC: H01L29/06 ,  H01L21/768 ,  H01L21/762

CPC classification number: H01L21/76898 ,  H01L21/76251

Abstract: A device and corresponding fabrication method includes a vertical stack having an intermediate layer between a lower region and an upper region. The intermediate layer is extended by a protection layer. The vertical stack has a free lateral face on which the lower region, the upper region and the protection layer are exposed.

Abstract translation: 一种器件和相应的制造方法包括在下部区域和上部区域之间具有中间层的垂直堆叠。 中间层由保护层延伸。 垂直堆叠具有自由侧面，下部区域，上部区域和保护层暴露在该侧面上。

公开(公告)号：US20150053923A1

公开(公告)日：2015-02-26

申请号：US14464793

申请日：2014-08-21

Applicant: STMICROELECTRONICS SA ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Laurent Frey ,  Michel Marty

IPC: H01L27/146 ,  H01L31/0352

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643 ,  H01L31/02327 ,  H01L31/035236 ,  H01L31/107

Abstract: A back side illumination photodiode includes a light-receiving back side surface of a semiconductor material substrate. An area of the light-receiving back side surface includes a recess. The recess is filled with a material having an optical index that is lower than an optical index of the semiconductor material substrate. Both the substrate and the filling material are transparent to an operating wavelength of the photodiode. The recess may be formed to have a ring shape.

Abstract translation: 背面照明光电二极管包括半导体材料基板的受光背面。 光接收侧面的面积包括凹部。 凹部填充有光学折射率低于半导体材料基板的光学折射率的材料。 衬底和填充材料都对于光电二极管的工作波长是透明的。 凹部可以形成为环形。