公开(公告)号：US20060138442A1

公开(公告)日：2006-06-29

申请号：US11345756

申请日：2006-02-02

申请人： Gunther Waitl ,  Herbert Brunner

发明人： Gunther Waitl ,  Herbert Brunner

IPC分类号： H01L33/00

CPC分类号： H01L33/486 ,  H01L24/45 ,  H01L31/0203 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01019 ,  H01L2924/01058 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00

摘要： A housing accommodating a semiconductor chip is set out. The housing and chip may be used for sending and/or receiving radiation. Popular applications of the housing may be in light emitting diodes. The housing includes a conductor strip that is punched into two electrically isolated portions. The housing further includes a cavity extending inwards from the top of the housing. The conductor portions include respective areas that are exposed at the bottom of the cavity. The semiconductor chip is bonded to one of the exposed areas and a wire bonds the chip to the second exposed area. The conductor portions also terminate in exposed electrodes, which allow for electrical connection of the chip with external devices. A window is formed in the cavity and the walls of the housing that form the cavity may be made of a reflective material. The electrodes remain unexposed to the window but for any residual areas about the chip and bonding wire within the first and second exposed areas. By minimizing the area of the conductor exposed to the window, delamination brought about by the different thermal expansions of the window and conductor are minimized and/or eliminated. Likewise, with a reflective housing covering the base of the cavity that accommodates the window, internal radiation reflection is increased over that which was achieved with an exposed conductor.

公开(公告)号：US20050196886A1

公开(公告)日：2005-09-08

申请号：US10735507

申请日：2003-12-11

申请人： Harald Jager ,  Herbert Brunner

发明人： Harald Jager ,  Herbert Brunner

IPC分类号： B29C45/14 ,  H01L33/52 ,  H01L21/00

CPC分类号： B29C45/14639 ,  B29L2011/00 ,  H01L33/52 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/8592 ,  H01L2924/00014

摘要： A plurality of light-emitting diode light sources of the same kind are produced simultaneously. Each light source includes a light-emitting diode chip and a luminescence conversion element, which converts the wavelength of at least part of an electromagnetic radiation emitted by the light-emitting diode chip. In a first process, a layer composite with a light-emitting diode layer sequence applied to a carrier substrate is provided. The wafer is provided with trenches and then inserted into a cavity of a mold. A molding compound, which contains a luminescence conversion material, is driven in, so that the trenches are at least partly filled with the molding compound. The mold is then removed and the light-emitting diode light sources are separated from the layer composite. In a second process, instead of the layer composite, a plurality of light-emitting diode chips which are applied to a common carrier in a regular arrangement are provided.

摘要翻译： 同时产生同一种类的多个发光二极管光源。 每个光源包括发光二极管芯片和发光转换元件，其转换由发光二极管芯片发射的电磁辐射的至少一部分的波长。 在第一种方法中，提供了一种施加到载体衬底的发光二极管层序列的层复合物。 晶片设置有沟槽，然后插入模具的空腔中。 包含发光转换材料的模塑料被驱入，使得沟槽至少部分地被模塑料填充。 然后去除模具，并且发光二极管光源与层复合物分离。 在第二过程中，提供以规则排列施加到公共载体的多个发光二极管芯片代替层复合物。

公开(公告)号：US5742098A

公开(公告)日：1998-04-21

申请号：US616319

申请日：1996-03-15

申请人： Herbert Brunner

发明人： Herbert Brunner

IPC分类号： H01L23/28 ,  H01L21/56 ,  H01L23/29 ,  H01L23/31 ,  H01L29/06 ,  H01L31/0236 ,  H01L33/22 ,  H01L33/52 ,  H01L23/04 ,  H01L33/00 ,  H05K5/00

CPC分类号： H01L33/52 ,  H01L23/3142 ,  H01L24/32 ,  H01L29/0657 ,  H01L31/0236 ,  H01L33/22 ,  H01L2224/05624 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48624 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/10156 ,  H01L2924/10157 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/181 ,  H01L2924/18301 ,  Y02E10/50

摘要： A semiconductor component includes a semiconductor body. At least one contact metallizing covers at least one portion of a surface of the semiconductor body, defining at least one free portion of the surface not covered by the at least one contact metallizing. A plastic sheath adjoins the semiconductor body having the at least one contact metallizing. The at least one free portion of the surface has a roughening forming a microscopic toothing between the semiconductor body and the plastic sheath. A method for producing a semiconductor component includes producing a semiconductor body, contact metallizings on the semiconductor body, and a microscopic tooth structure on a surface of the semiconductor body. The semiconductor body with the contact metallizings and the microscopic tooth structure is mounted on a system substrate. At least one terminal lead is bonded to one of the contact metallizings and to terminal prongs of the system substrate. The semiconductor body, the contact metallizings, the at least one terminal lead, portions of the terminal prongs and at least portions of the system substrate are sheathed with plastic, while penetrating, filling and curing the plastic in the microscopic tooth structure.

摘要翻译： 半导体部件包括半导体本体。 至少一个接触金属化覆盖半导体主体的表面的至少一部分，限定未被至少一个接触金属化覆盖的表面的至少一个自由部分。 塑料护套与具有至少一个接触金属化的半导体本体相邻。 表面的至少一个自由部分具有在半导体本体和塑料护套之间形成微观齿的粗糙化。 一种制造半导体部件的方法包括制造半导体本体，半导体本体上的接触镀层以及半导体本体表面上的微观齿结构。 具有接触镀层和微观齿结构的半导体主体安装在系统基板上。 至少一个端子引线接合到系统基板的接触镀层和端子尖端之一。 半导体主体，接触镀层，至少一个端子引线，端子插脚的部分和系统基板的至少部分被塑料包覆，同时穿透，填充和固化微观齿结构中的塑料。

公开(公告)号：US4762690A

公开(公告)日：1988-08-09

申请号：US937164

申请日：1986-12-02

申请人： Herbert Brunner ,  Reinhard Ballhorn ,  Roland Schwab

发明人： Herbert Brunner ,  Reinhard Ballhorn ,  Roland Schwab

IPC分类号： B01J39/02 ,  A62D3/33 ,  A62D101/24 ,  A62D101/40 ,  A62D101/43 ,  B01J20/02 ,  C01B25/45 ,  C02F1/28 ,  G21F9/00 ,  G21F9/12 ,  A62D3/00

CPC分类号： A62D3/33 ,  B01J20/0207 ,  B01J20/0292 ,  B01J20/041 ,  B01J20/048 ,  B01J20/06 ,  C01B25/45 ,  C02F1/281 ,  G21F9/12 ,  A62D2101/24 ,  A62D2101/40 ,  A62D2101/43

摘要： Synthetic Crandallites of the general composition MeAl.sub.3 (PO.sub.4) (OH).sub.5.H.sub.2 O (Me=alkaline earth metal) are used for the separation of cations, especially alkaline earth metals, lanthanides and actinides, at a pH greater than 6 and temperature above 40.degree. C.

摘要翻译： 通常组合物MeAl3（PO4）（OH）5.H2O（Me =碱土金属）的合成二硬脂酸盐用于分离阳离子，特别是碱土金属，镧系元素和锕系元素，pH大于6，温度高于40 DEG C.

公开(公告)号：US09293671B2

公开(公告)日：2016-03-22

申请号：US13695606

申请日：2011-04-11

申请人： Herbert Brunner ,  Hans-Christoph Gallmeier ,  Simon Jerebic ,  Stephan Preuβ ,  Hansjörg Schöll

发明人： Herbert Brunner ,  Hans-Christoph Gallmeier ,  Simon Jerebic ,  Stephan Preuβ ,  Hansjörg Schöll

IPC分类号： H01L21/00 ,  H01L33/60 ,  H01L33/00 ,  H01L33/46 ,  H01L33/56 ,  H01L33/48 ,  H01L33/50

CPC分类号： H01L33/60 ,  H01L33/005 ,  H01L33/46 ,  H01L33/486 ,  H01L33/508 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2933/005 ,  H01L2924/00

摘要： An optoelectronic component comprising an optoelectronic semiconductor chip (104) having a contact side (106) and a radiation coupling-out side (108) situated opposite; a chip carrier (102), on which the semiconductor chip (104) is applied via its contact side (106); a radiation conversion element (110) applied on the radiation coupling-out side (108); and a reflective potting compound (112), which is applied on the chip carrier (102) and laterally encloses the semiconductor chip (104) and the radiation conversion element (110); wherein the potting compound (112) adjoins an upper edge of the radiation conversion element (110) in a substantially flush fashion, such that a top side of the radiation conversion element (110) is free of the potting compound (112).

摘要翻译： 一种光电子部件，包括具有相对设置的接触侧（106）和辐射耦合出侧（108）的光电子半导体芯片（104） 芯片载体（102），其上通过其接触侧（106）施加半导体芯片（104）; 辐射转换元件（110），其施加在辐射耦合输出侧（108）上; 以及反射封装化合物（112），其被施加在所述芯片载体（102）上并横向封闭所述半导体芯片（104）和所述辐射转换元件（110）; 其中所述封装化合物（112）以基本上齐平的方式邻接所述辐射转换元件（110）的上边缘，使得所述辐射转换元件（110）的顶侧没有所述封装化合物（112）。

公开(公告)号：US09281453B2

公开(公告)日：2016-03-08

申请号：US13995847

申请日：2011-12-07

申请人： Markus Pindl ,  Harald Jäger ,  Stephan Preuβ ,  Herbert Brunner

发明人： Markus Pindl ,  Harald Jäger ,  Stephan Preuβ ,  Herbert Brunner

IPC分类号： H01L21/00 ,  H01L33/50 ,  H01L33/54

CPC分类号： H01L33/50 ,  H01L33/508 ,  H01L33/54 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2933/0041 ,  H01L2924/00014

摘要： A method of producing an optoelectronic component includes providing a cavity; introducing a liquid matrix material with phosphor particles distributed therein into the cavity; introducing a semiconductor chip into the matrix material; sedimenting the phosphor particles in the matrix material; and curing the matrix material, wherein a conversion layer including phosphor particles is produced, said conversion layer being arranged on the semiconductor chip.

摘要翻译： 制造光电子部件的方法包括提供空腔; 将其中分布有荧光体颗粒的液体基质材料引入所述空腔中; 将半导体芯片引入基体材料中; 沉淀基体材料中的荧光体颗粒; 并固化所述基体材料，其中产生包含荧光体颗粒的转换层，所述转换层布置在所述半导体芯片上。

公开(公告)号：US20130337593A1

公开(公告)日：2013-12-19

申请号：US13977407

申请日：2011-12-15

申请人： Hans-Christoph Gallmeier ,  Günter Spath ,  Herbert Brunner

发明人： Hans-Christoph Gallmeier ,  Günter Spath ,  Herbert Brunner

IPC分类号： H01L33/50

CPC分类号： H01L33/50 ,  H01L33/0095 ,  H01L33/505 ,  H01L2224/48 ,  H01L2933/0041

摘要： A method for producing a plurality of radiation-emitting semiconductor components (10) is specified, said components each comprising at least one semiconductor chip (1) and a converter lamina (2). For this purpose, this method involves providing a plurality of semiconductor chips (1) in the wafer assembly (10a), said semiconductor chips each being suitable for emitting a primary radiation. Moreover, a plurality of converter laminae (2) are provided on a common carrier (2a), said converter laminae each being suitable for converting the primary radiation into a secondary radiation, wherein a converter lamina (2) is in each case mounted on one semiconductor chip (1) or onto a plurality of semiconductor chips (1) by means of an automated method.

摘要翻译： 规定了用于制造多个发光半导体部件（10）的方法，所述部件各自包括至少一个半导体芯片（1）和转换器层（2）。 为此，该方法包括在晶片组件（10a）中提供多个半导体芯片（1），所述半导体芯片各自适于发射初级辐射。 此外，多个转换器层（2）设置在公共载体（2a）上，所述转换器层各自适合于将初级辐射转换成次级辐射，其中转换器层（2）分别安装在一个 半导体芯片（1）或多个半导体芯片（1）上。

公开(公告)号：US08476655B2

公开(公告)日：2013-07-02

申请号：US11992976

申请日：2006-09-22

申请人： Herbert Brunner ,  Kirstin Petersen

发明人： Herbert Brunner ,  Kirstin Petersen

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/507 ,  H01L33/52 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： An optoelectronic component comprising a housing and a luminescence diode chip arranged in the housing is specified, which component emits a useful radiation. The housing has a housing material which is transmissive to the useful radiation and which is admixed with radiation-absorbing particles in a targeted manner for setting a predetermined radiant intensity or luminous intensity of the emitted useful radiation. The radiation-absorbing particles reduce the radiant intensity or the luminous intensity by a defined value in a targeted manner in order thus to set a predetermined radiant intensity or luminous intensity for the component. A method for producing an optoelectronic component of this type is additionally disclosed.

摘要翻译： 规定了包括设置在壳体中的壳体和发光二极管芯片的光电子部件，该组件发射有用的辐射。 壳体具有对有用辐射透射的外壳材料，并且以有目标的方式与辐射吸收颗粒混合，以设定发射的有用辐射的预定辐射强度或发光强度。 放射线吸收粒子按目标方式按照规定的值降低辐射强度或发光强度，从而设定成分的规定的辐射强度或发光强度。 另外公开了一种用于制造这种类型的光电子部件的方法。

公开(公告)号：US08461616B2

公开(公告)日：2013-06-11

申请号：US12995181

申请日：2009-04-20

申请人： Thomas Zeiler ,  Reiner Windisch ,  Stefan Gruber ,  Markus Kirsch ,  Julius Muschaweck ,  Torsten Baade ,  Herbert Brunner ,  Steffen Köhler

发明人： Thomas Zeiler ,  Reiner Windisch ,  Stefan Gruber ,  Markus Kirsch ,  Julius Muschaweck ,  Torsten Baade ,  Herbert Brunner ,  Steffen Köhler

IPC分类号： H01L31/048

CPC分类号： H01L33/54 ,  H01L25/042 ,  H01L25/0753 ,  H01L33/38 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00

摘要： According to at least one embodiment of the semiconductor arrangement, the latter comprises a mounting side, at least one optoelectronic semiconductor chip with mutually opposing chip top and bottom, and at least one at least partially radiation-transmissive body with a body bottom, on which the semiconductor chip is mounted such that the chip top faces the body bottom. Moreover, the semiconductor arrangement comprises at least two electrical connection points for electrical contacting of the optoelectronic semiconductor chip, wherein the connection points do not project laterally beyond the body and with their side remote from the semiconductor chip delimit the semiconductor arrangement on the mounting side thereof.

摘要翻译： 根据半导体布置的至少一个实施例，后者包括安装侧，至少一个具有相对的芯片顶部和底部的光电子半导体芯片以及至少一个具有主体底部的至少部分辐射透射主体， 安装半导体芯片使得芯片顶部面向主体底部。 此外，半导体装置包括用于光电子半导体芯片的电接触的至少两个电连接点，其中连接点不侧向突出超过本体并且其远离半导体芯片的一侧限定其安装侧上的半导体布置 。

公开(公告)号：US08450847B2

公开(公告)日：2013-05-28

申请号：US13126096

申请日：2009-11-02

申请人： Patrick Ninz ,  Herbert Brunner

发明人： Patrick Ninz ,  Herbert Brunner

IPC分类号： H01L23/498 ,  H01L23/10 ,  H01L23/04 ,  H01L23/58

CPC分类号： H01L33/483 ,  H01L21/50 ,  H01L23/04 ,  H01L23/10 ,  H01L33/58 ,  H01L2924/0002 ,  H01S5/02272 ,  H01L2924/00

摘要： A method for producing an optoelectronic device includes providing a carrier, applying at least one first metal layer on the carrier, providing at least one optical component, applying at least one second metal layer on the at least one optical component, and mechanically connecting the carrier to the at least one optical component by the at least one first and the at least one second metal layer, wherein the connecting includes friction welding or is friction welding.

摘要翻译： 一种制造光电子器件的方法包括提供载体，在载体上施加至少一个第一金属层，提供至少一个光学部件，在至少一个光学部件上施加至少一个第二金属层，以及机械连接载体 通过所述至少一个第一和所述至少一个第二金属层到所述至少一个光学部件，其中所述连接包括摩擦焊接或者是摩擦焊接。