公开(公告)号：US09941275B2

公开(公告)日：2018-04-10

申请号：US15470872

申请日：2017-03-27

Applicant: Monolithic 3D Inc.

Inventor： Zvi Or-Bach ,  Brian Cronquist ,  Deepak Sekar

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L27/06 ,  H01L23/544 ,  H01L27/088 ,  H01L23/58 ,  H01L23/00 ,  H01L23/367 ,  H01L27/092

CPC classification number: H01L27/0688 ,  H01L23/3677 ,  H01L23/544 ,  H01L23/552 ,  H01L23/562 ,  H01L23/585 ,  H01L27/088 ,  H01L27/092 ,  H01L27/1211 ,  H01L2223/54426 ,  H01L2223/54453

Abstract: An Integrated Circuit device, including: a first layer including first single crystal transistors; a second layer overlaying the first layer, the second layer including second single crystal transistors, where the second layer thickness is less than one micron, where a plurality of the first transistors is circumscribed by a first dice lane of at least 10 microns width, and there are no first conductive connections to the plurality of the first transistors that cross the first dice lane, where a plurality of the second transistors are circumscribed by a second dice lane of at least 10 microns width, and there are no second conductive connections to the plurality of the second transistors that cross the second dice lane, and at least one thermal conducting path from at least one of the second single crystal transistors to an external surface of the device.

公开(公告)号：US09786636B2

公开(公告)日：2017-10-10

申请号：US15008444

申请日：2016-01-28

Applicant: Monolithic 3D Inc.

Inventor： Zvi Or-Bach ,  Brian Cronquist

IPC: H01L21/00 ,  H01L25/065 ,  H01L21/768 ,  H01L23/48 ,  H01L23/485 ,  H01L23/522 ,  H01L29/66 ,  H01L21/74 ,  H01L25/00 ,  H01L27/06 ,  H01L27/088 ,  H01L23/36 ,  H01L29/423 ,  H01L29/78 ,  H01L27/092

CPC classification number: H01L25/0657 ,  H01L21/743 ,  H01L21/76898 ,  H01L23/36 ,  H01L23/481 ,  H01L23/485 ,  H01L23/522 ,  H01L23/5225 ,  H01L25/50 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/092 ,  H01L29/4236 ,  H01L29/66621 ,  H01L29/78 ,  H01L2225/06506 ,  H01L2225/06527 ,  H01L2225/06537 ,  H01L2225/06544 ,  H01L2225/06589 ,  H01L2924/0002 ,  H01L2924/01104 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/2064 ,  H01L2924/351 ,  H01L2924/00

Abstract: An Integrated Circuit device, including: a base wafer including single crystal, the base wafer including a plurality of first transistors; at least one metal layer providing interconnection between the plurality of first transistors; a first wire structure constructed to provide power to a portion of the first transistors; a second layer of less than 2 micron thickness, the second layer including a plurality of second single crystal transistors, the second layer overlying the at least one metal layer; and a second wire structure constructed to provide power to a portion of the second transistors, where the second wire structure is isolated from the first wire structure to provide a different power voltage to the portion of the second transistors.

公开(公告)号：US20170133432A1

公开(公告)日：2017-05-11

申请号：US15409740

申请日：2017-01-19

Applicant: Monolithic 3D Inc.

Inventor： Zvi Or-Bach ,  Deepak C. Sekar ,  Brian Cronquist ,  Israel Beinglass ,  Zeev Wurman

IPC: H01L27/24 ,  H01L29/66 ,  H01L29/167 ,  H01L29/78 ,  H01L45/00 ,  H01L29/04

CPC classification number: H01L27/2436 ,  G11C13/0021 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/2236 ,  H01L21/31116 ,  H01L21/324 ,  H01L21/76254 ,  H01L21/8221 ,  H01L21/84 ,  H01L23/481 ,  H01L23/544 ,  H01L27/0207 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10876 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/112 ,  H01L27/11551 ,  H01L27/11578 ,  H01L27/11807 ,  H01L27/11898 ,  H01L27/1203 ,  H01L27/249 ,  H01L29/04 ,  H01L29/167 ,  H01L29/66568 ,  H01L29/78 ,  H01L29/78696 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/146 ,  H01L45/1616 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/00011 ,  H01L2224/80001

Abstract: A semiconductor memory, including: a first memory cell including a first transistor; a second memory cell including a second transistor; and a memory peripherals transistor overlaying the second transistor or underneath the first transistor, where the second memory cell overlays the first memory cell, and where the first memory cell and the second memory cell have both been processed following a lithography step and accordingly are precisely aligned, and where the memory peripherals transistor is part of a peripherals circuit controlling the memory.

公开(公告)号：US20160343774A1

公开(公告)日：2016-11-24

申请号：US15224929

申请日：2016-08-01

Applicant: Monolithic 3D Inc.

Inventor： Zvi Or-Bach ,  Deepak C. Sekar ,  Brian Cronquist ,  Israel Beinglass ,  Zeev Wurman

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2436 ,  G03F9/7076 ,  G03F9/7084 ,  H01L21/76254 ,  H01L21/8221 ,  H01L21/84 ,  H01L23/481 ,  H01L23/544 ,  H01L27/0207 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/092 ,  H01L27/105 ,  H01L27/10876 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/112 ,  H01L27/11551 ,  H01L27/11578 ,  H01L27/11807 ,  H01L27/11898 ,  H01L27/1203 ,  H01L27/249 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/146 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/00011 ,  H01L2224/80001

Abstract: A semiconductor device, including: a first memory cell including a first transistor; a second memory cell including a second transistor, where the second transistor overlays the first transistor and the second transistor self-aligned to the first transistor; and a plurality of junctionless transistors, where at least one of the junctionless transistors controls access to at least one of the memory cells.

Abstract translation: 一种半导体器件，包括：包括第一晶体管的第一存储单元; 第二存储单元，包括第二晶体管，其中所述第二晶体管覆盖所述第一晶体管，所述第二晶体管与所述第一晶体管自对准; 以及多个无连接晶体管，其中至少一个无连接晶体管控制对至少一个存储单元的访问。

公开(公告)号：US09460991B1

公开(公告)日：2016-10-04

申请号：US13864242

申请日：2013-04-17

Applicant: Monolithic 3D Inc.

Inventor： Zvi Or-Bach ,  Brian Cronquist ,  Deepak Sekar

IPC: H01L21/70 ,  H01L23/62 ,  H01L23/498

CPC classification number: H01L21/4871 ,  H01L21/823487 ,  H01L23/34 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/373 ,  H01L23/3732 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5226 ,  H01L23/60 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0207 ,  H01L27/0248 ,  H01L27/0688 ,  H01L27/092 ,  H01L27/098 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A 3D semiconductor device, including: a first layer including first transistors; a second layer overlying the first transistors and including second transistors; wherein the second layer includes a through layer via with a diameter of less than 150 nm; and a first circuit including at least one of the first transistors, and the first circuit has a first circuit output connected to at least one of the second transistors, wherein the at least one of the second transistors is connected to a device output that is designed to be connected to external devices, and wherein the at least one of the second transistors is substantially larger than the at least one of the first transistors.

Abstract translation: 一种3D半导体器件，包括：包括第一晶体管的第一层; 覆盖所述第一晶体管并包括第二晶体管的第二层; 其中所述第二层包括直径小于150nm的贯通层通孔; 以及第一电路，其包括所述第一晶体管中的至少一个，并且所述第一电路具有连接到所述第二晶体管中的至少一个的第一电路输出，其中所述第二晶体管中的至少一个连接到设计的器件输出 以连接到外部设备，并且其中所述第二晶体管中的至少一个基本上大于所述至少一个所述第一晶体管。

公开(公告)号：US09385088B2

公开(公告)日：2016-07-05

申请号：US14626563

申请日：2015-02-19

Applicant: Monolithic 3D Inc.

Inventor： Zvi Or-Bach ,  Deepak C. Sekar ,  Brian Cronquist

IPC: H01L23/538 ,  H01L45/00 ,  H01L27/108 ,  H01L27/115 ,  H01L27/11 ,  H01L27/06 ,  H01L27/088 ,  H01L27/085 ,  H01L27/092 ,  H01L27/22 ,  H01L27/24

CPC classification number: H01L23/5386 ,  H01L27/0688 ,  H01L27/085 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/10802 ,  H01L27/1108 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/228 ,  H01L27/2436 ,  H01L27/249 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1675 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/15311 ,  H01L2924/00

Abstract: A semiconductor device including: a first layer including first transistors including at least one first monocrystalline silicon transistor channel; a second layer including second transistors including at least one second monocrystalline non-silicon transistor channel; a plurality of connection paths extending from the second transistors to the first transistors, where at least one of the connection paths includes at least one through layer via with a diameter of less than 200 nm.

Abstract translation: 一种半导体器件，包括：包括第一晶体管的第一层，所述第一晶体管包括至少一个第一单晶硅晶体管沟道; 第二层，包括包括至少一个第二单晶非硅晶体管沟道的第二晶体管; 从第二晶体管延伸到第一晶体管的多个连接路径，其中至少一个连接路径包括直径小于200nm的至少一个贯穿层通孔。

公开(公告)号：US20160111369A1

公开(公告)日：2016-04-21

申请号：US14975830

申请日：2015-12-20

Applicant: Monolithic 3D Inc.

Inventor： Zvi Or-Bach ,  Deepak C. Sekar ,  Brian Cronquist ,  Zeev Wurman

IPC: H01L23/528 ,  H01L23/544 ,  H01L23/373 ,  H01L27/06

CPC classification number: H01L23/5286 ,  B82Y10/00 ,  G11C11/41 ,  G11C16/0408 ,  G11C16/0483 ,  G11C16/10 ,  G11C17/18 ,  G11C29/32 ,  G11C29/44 ,  H01L21/6835 ,  H01L21/76254 ,  H01L21/84 ,  H01L23/36 ,  H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L27/0207 ,  H01L27/0688 ,  H01L27/0694 ,  H01L27/088 ,  H01L27/092 ,  H01L27/1052 ,  H01L27/10802 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/1104 ,  H01L27/1108 ,  H01L27/1116 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/11529 ,  H01L27/11551 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11578 ,  H01L27/11807 ,  H01L27/1203 ,  H01L29/1033 ,  H01L29/66795 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7841 ,  H01L29/785 ,  H01L29/78696 ,  H01L29/7881 ,  H01L29/792 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81001 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2924/014 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A 3D IC device including: a first semiconductor layer including first mono-crystallized transistors, where the first mono-crystallized transistors are interconnected by at least one metal layer including aluminum or copper; a second layer including second mono-crystallized transistors and overlaying the at least one metal layer, where the at least one metal layer is in-between the first semiconductor layer and the second layer; a global power grid to distribute power to the device overlaying the second layer; and a local power grid to distribute power to the first mono-crystallized transistors, where the global power grid is connected to the local power grid by a plurality of through second layer vias, and where the vias have a radius of less than 150 nm.

Abstract translation: 一种3D IC器件，包括：包括第一单结晶晶体管的第一半导体层，其中所述第一单结晶晶体管通过至少一个包括铝或铜的金属层互连; 第二层，包括第二单结晶晶体管并且覆盖所述至少一个金属层，其中所述至少一个金属层在所述第一半导体层和所述第二层之间; 全球电力网，用于向覆盖第二层的设备分配电力; 以及局部电网以将功率分配给第一单结晶晶体管，其中全局电网通过多个通过第二层通孔连接到本地电网，并且其中通孔具有小于150nm的半径。

公开(公告)号：US09219005B2

公开(公告)日：2015-12-22

申请号：US13623756

申请日：2012-09-20

Applicant: Monolithic 3D Inc.

Inventor： Zvi Or-Bach ,  Deepak Sekar ,  Brian Cronquist ,  Ze'ev Wurman

IPC: H01L23/48 ,  H01L21/762 ,  H01L23/544 ,  H01L21/683 ,  H01L27/06 ,  H01L27/092 ,  B82Y10/00 ,  H01L21/84 ,  H01L29/66 ,  H01L27/02 ,  H01L29/78 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L27/11 ,  H01L27/115 ,  H01L27/118 ,  H01L27/12 ,  G11C16/04 ,  G11C16/10 ,  H01L29/786 ,  H01L29/10 ,  H01L23/00 ,  H01L25/065 ,  H01L27/088 ,  G11C11/41 ,  G11C17/18 ,  G11C29/32 ,  G11C29/44

CPC classification number: B82Y10/00 ,  G11C11/41 ,  G11C16/0408 ,  G11C16/0483 ,  G11C16/10 ,  G11C17/18 ,  G11C29/32 ,  G11C29/44 ,  H01L21/6835 ,  H01L21/76254 ,  H01L21/84 ,  H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L25/0655 ,  H01L27/0207 ,  H01L27/0688 ,  H01L27/0694 ,  H01L27/088 ,  H01L27/092 ,  H01L27/1052 ,  H01L27/10802 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/1104 ,  H01L27/1108 ,  H01L27/1116 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/11529 ,  H01L27/11551 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11578 ,  H01L27/11807 ,  H01L27/1203 ,  H01L29/1033 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7841 ,  H01L29/785 ,  H01L29/78696 ,  H01L29/7881 ,  H01L29/792 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81001 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2924/014 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A 3D IC based mobile system including: a first semiconductor layer including first mono-crystallized transistors, where the first mono-crystallized transistors are interconnected by at least one metal layer including aluminum or copper; a second layer including second mono-crystallized transistors and overlaying the at least one metal layer, where the at least one metal layer is in-between the first semiconductor layer and the second layer; a plurality of thermal paths between the second mono-crystallized transistors and a heat removal apparatus, where at least one of the plurality of thermal paths includes a thermal contact adapted to conduct heat and not conduct electricity; and a heat spreader layer between the second layer and the at least one metal layer.

Abstract translation: 一种基于3D IC的移动系统，包括：包括第一单结晶晶体管的第一半导体层，其中第一单结晶晶体管通过包括铝或铜的至少一个金属层互连; 第二层，包括第二单结晶晶体管并且覆盖所述至少一个金属层，其中所述至少一个金属层在所述第一半导体层和所述第二层之间; 所述第二单结晶晶体管和散热装置之间的多个热路径，其中所述多个热路径中的至少一个包括适于传导热量而不导电的热接触; 以及在所述第二层和所述至少一个金属层之间的散热层。

公开(公告)号：US09099424B1

公开(公告)日：2015-08-04

申请号：US13869115

申请日：2013-04-24

Applicant: Monolithic 3D Inc.

Inventor： Deepak Sekar ,  Zvi Or-Bach ,  Brian Cronquist

IPC: H01L29/72 ,  H01L23/373

CPC classification number: H01L23/5225 ,  H01L23/3677 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/092 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A mobile system, including: a 3D device, the 3D device including: a first layer of first transistors, overlaid by at least one interconnection layer, where the interconnection layer comprises copper or aluminum; a second layer including second transistors, the second layer overlaying the interconnection layer, the second layer including: a plurality of electrical connections connecting the second transistors with the interconnection layer; and at least one thermally conductive and electrically non-conductive contact, the at least one thermally conductive and electrically non-conductive contact thermally connects the second layer to the top or bottom surface of the 3D device.

Abstract translation: 一种移动系统，包括：3D设备，所述3D设备包括：由至少一个互连层覆盖的第一层第一晶体管，所述互连层包括铜或铝; 包括第二晶体管的第二层，覆盖所述互连层的所述第二层，所述第二层包括：将所述第二晶体管与所述互连层连接的多个电连接; 以及至少一个导热和非导电接触，所述至少一个导热和非导电接触将所述第二层热连接到所述3D器件的顶表面或底表面。

公开(公告)号：US09023688B1

公开(公告)日：2015-05-05

申请号：US14298917

申请日：2014-06-07

Applicant: Monolithic 3D Inc.

Inventor： Zvi Or-Bach ,  Brian Cronquist ,  Albert Karl Henning

IPC: H01L21/00 ,  H01L21/8238 ,  H01L21/20 ,  H01L21/44 ,  H01L21/768

CPC classification number: H01L27/0688 ,  H01L21/67109 ,  H01L23/3677 ,  H01L23/3736 ,  H01L23/481 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for processing a semiconductor device, the method including; providing a first semiconductor layer including first transistors; forming interconnection layers overlying the transistors, where the interconnection layers include copper or aluminum; forming a shielding heat conducting layer overlaying the interconnection layers; forming an isolation layer overlaying the shielding heat conducting layer; forming a second semiconductor layer overlying the isolation layer, and processing the second semiconductor layer at a temperature greater than about 400° C., where the interconnection layers are kept at a temperature below about 400° C.

Abstract translation: 一种半导体器件的处理方法，该方法包括： 提供包括第一晶体管的第一半导体层; 形成覆盖晶体管的互连层，其中互连层包括铜或铝; 形成覆盖所述互连层的屏蔽导热层; 形成覆盖所述屏蔽导热层的隔离层; 形成覆盖隔离层的第二半导体层，以及在大于约400℃的温度下处理第二半导体层，其中互连层保持在低于约400℃的温度。