公开(公告)号：US06179910B2

公开(公告)日：2001-01-30

申请号：US09396107

申请日：1999-09-14

申请人： Takashi Yokoyama ,  Shin Matsukuma ,  Toshiaki Saishoji ,  Kozo Nakamura ,  Junsuke Tomioka

发明人： Takashi Yokoyama ,  Shin Matsukuma ,  Toshiaki Saishoji ,  Kozo Nakamura ,  Junsuke Tomioka

IPC分类号： C30B1520

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206

摘要： This invention provides a method for manufacturing silicon single crystals. The method is capable of eliminating void defects existing in deep regions of a silicon single crystal despite the size of the silicon single crystal. The silicon single crystals according to this invention are pulled the radius of a ring-shaped oxidation induced stacking fault (OSF ring) of a wafer is larger than half the radius of the wafer during the process of thermal oxidation treatment.

摘要翻译： 本发明提供一种制造单晶硅的方法。 该方法尽管硅单晶的尺寸能够消除存在于硅单晶的深区域中的空隙缺陷。 根据本发明的硅单晶在热氧化处理过程中拉动晶片的环形氧化诱导堆垛层错（OSF环）的半径大于晶片半径的一半。

公开(公告)号：US6072231A

公开(公告)日：2000-06-06

申请号：US066877

申请日：1998-04-28

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

IPC分类号： H01L21/52 ,  H01L23/31 ,  H01L23/495 ,  H01L23/50 ,  H01L25/10 ,  H01L29/06 ,  H05K1/14 ,  H05K1/18 ,  H05K3/34

CPC分类号： H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/32 ,  H01L24/49 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2224/92147 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

公开(公告)号：US6049534A

公开(公告)日：2000-04-11

申请号：US970159

申请日：1997-11-13

申请人： Kenichi Sakamoto ,  Tsutomu Kusaki ,  Masaru Murakami ,  Takashi Yokoyama

发明人： Kenichi Sakamoto ,  Tsutomu Kusaki ,  Masaru Murakami ,  Takashi Yokoyama

IPC分类号： H04L1/06 ,  H04B7/02 ,  H04L12/70 ,  H04W36/00 ,  H04W36/18 ,  H04W36/36 ,  H04Q7/00

CPC分类号： H04B7/022 ,  H04W36/18

摘要： A communication system includes a control unit, a switch and a diversity hand-over processing unit connected to the control unit and the switch for receiving, both a first communication signal received from a radio base station which outputs the hand-over instruction, and a second communication signal which receives it from another radio base station to which the communication signal will be hand-over to output one of the first and second communication signals to the associated interface circuit, and for transmitting the communication signal received through the radio base station from the mobile station on the reception side for communication to both the interface circuit associated with the radio base station as a source of hand-over and the interface circuit associated with the radio base station as a destination of hand-over. Thus, during the hand-over, the diversity hand-over processing unit transmits the communication signal from the mobile station on the reception side for communication to both the radio base station as a source of hand-over and the radio base station as a destination of hand-over so that the communication is established between the mobile station on the transmission side for communication and the mobile station as a destination of hand-over and on the reception side for communication.

摘要翻译： 一种通信系统，包括控制单元，开关和分配移交处理单元，连接到控制单元和开关，用于接收从输出切换指令的无线电基站接收的第一通信信号和 第二通信信号，其从另一个无线电基站接收通信信号将被切换到的第二和第二通信信号，以将第一和第二通信信号中的一个输出到相关联的接口电路，并且将通过无线电基站接收的通信信号从 接收侧的移动台用于与无线基站相关联的接口电路作为切换源，以及与无线基站相关联的接口电路作为切换目的地进行通信。 因此，在切换过程中，分集处理单元将来自接收侧的移动台的通信信号作为切换的来源发送到作为切换的来源的无线基站和作为目的地的无线基站 使得在用于通信的发送侧的移动台和作为切换的目的地的移动台之间以及在用于通信的接收侧上建立通信。

公开(公告)号：US6049091A

公开(公告)日：2000-04-11

申请号：US885744

申请日：1997-06-30

申请人： Takashi Yokoyama

发明人： Takashi Yokoyama

IPC分类号： H01L29/78 ,  H01L21/335 ,  H01L29/16 ,  H01L29/778 ,  H01L29/80 ,  H01L31/072

CPC分类号： H01L29/66431 ,  H01L29/1604 ,  H01L29/7786

摘要： There is provided a field effect transistor including (a) an amorphous semiconductor layer made of amorphous silicon hydride containing impurities doped therein, (b) a semiconductor layer made of single crystal silicon having an electron affinity greater than that of the amorphous silicon hydride, formed on the amorphous semiconductor layer, (c) a gate insulating film formed on the semiconductor layer, and (d) a gate electrode formed on the gate insulating film. The amorphous semiconductor layer and the semiconductor layer cooperate with each other to thereby form a potential well at a junction therebetween. The above mentioned field effect transistor utilizes a difference in electron affinity between the amorphous semiconductor layer and the semiconductor layer to thereby make it possible to operate at a higher speed because carriers are not influenced by scattering of doped ions. In addition, the formation of a single crystal silicon layer on an amorphous silicon layer, which would be difficult to fabricate by epitaxial growth, can be accomplished by means of ion implantation, and can be operated in accordance with the operation principle of a conventional MOS transistor.

摘要翻译： 提供了一种场效应晶体管，其包括（a）由非掺杂杂质掺杂的非晶硅氢化物制成的非晶半导体层，（b）由具有大于非晶硅氢化物的电子亲和力的单晶硅制成的半导体层，形成 在所述非晶半导体层上，（c）形成在所述半导体层上的栅极绝缘膜，和（d）形成在所述栅极绝缘膜上的栅电极。 非晶半导体层和半导体层彼此配合，从而在它们之间的接合处形成势阱。 上述场效应晶体管利用了非晶半导体层与半导体层之间的电子亲和力差，从而使得可以以更高的速度工作，因为载流子不受掺杂离子的散射的影响。 此外，通过离子注入可以实现通过外延生长难以制造的在非晶硅层上形成单晶硅层，并且可以根据常规MOS的操作原理来操作 晶体管。

公开(公告)号：US5914530A

公开(公告)日：1999-06-22

申请号：US52981

申请日：1998-04-01

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

IPC分类号： H01L21/52 ,  H01L23/31 ,  H01L23/495 ,  H01L23/50 ,  H01L25/10 ,  H01L29/06 ,  H05K1/14 ,  H05K1/18 ,  H05K3/34

CPC分类号： H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/32 ,  H01L24/49 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2224/92147 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

公开(公告)号：US5612569A

公开(公告)日：1997-03-18

申请号：US464131

申请日：1995-06-05

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L23/31 ,  H01L23/495 ,  H01L25/10 ,  H01L29/06 ,  H05K1/14 ,  H05K1/18 ,  H05K3/34 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/32 ,  H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/05 ,  H01L24/06 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/06136 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48799 ,  H01L2224/73215 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421 ,  Y10T29/49121

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

摘要翻译： 由于半导体芯片尺寸大，高集成度和加速度，所以难以将半导体芯片与包装中的引线组合在一起。 鉴于这种困难，已经采用称为半导体和引线堆叠和封装的称为“片上引线”或“引线芯片”结构的封装结构。 在该结构的封装中，根据本发明，内引线和半导体芯片的前端部之间的间隙比除引导端部和半导体芯片之外的内引线部分之间的间隙宽，从而减小 杂散容量，提高信号传输速率和减少电气噪声。

公开(公告)号：US4970577A

公开(公告)日：1990-11-13

申请号：US337145

申请日：1989-04-12

申请人： Satoru Ogihara ,  Shunichi Numata ,  Kunio Miyazaki ,  Takashi Yokoyama ,  Ken Takahashi ,  Tasao Soga ,  Kazuji Yamada ,  Hiroichi Shinohara ,  Hideo Suzuki

发明人： Satoru Ogihara ,  Shunichi Numata ,  Kunio Miyazaki ,  Takashi Yokoyama ,  Ken Takahashi ,  Tasao Soga ,  Kazuji Yamada ,  Hiroichi Shinohara ,  Hideo Suzuki

IPC分类号： H01L21/60 ,  H01L23/12 ,  H01L23/498 ,  H01L23/52 ,  H01L23/64 ,  H05K1/02 ,  H05K1/03 ,  H05K1/14 ,  H05K3/34 ,  H05K3/36

CPC分类号： H01L23/642 ,  H01L23/49827 ,  H01L23/49833 ,  H05K1/141 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/01004 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/15312 ,  H01L2924/16152 ,  H05K1/0271 ,  H05K1/0306 ,  H05K2201/045 ,  H05K2201/049 ,  H05K2201/068 ,  H05K2201/10318 ,  H05K2201/10704 ,  H05K3/3426 ,  H05K3/368

摘要： A semiconductor chip module includes semiconductor chips each of which has contacts on its entire front face. A multi-layered organic circuit board having a small dielectric constant is provided for mounting the semiconductor chips. Intermediate ceramic substrates having the same thermal expansion coefficient as that of the semiconductor chip, are also provided. Each such intermediate ceramic substrate has contacts on its front and back faces corresponding to those of the semiconductor chip. These contacts are electrically connected directly in a one-to-one relationship. The contacts on the semiconductor chip and the corresponding ones on the front face of the intermediate ceramic substrates are connected by solder. The contacts on the back face of the intermediate ceramic substrate and the corresponding contacts on the front face of the multi-layered ceramic circuit board are connected by respective conductive pins having a predetermined flexibility and rigidity through a predetermined gap therebetween. With this arrangement, the relative displacement due to a thermal expansion difference between the intermediate ceramic substrate and the multi-layered organic circuit board is permitted without causing substantial stress thereon.

公开(公告)号：US4561486A

公开(公告)日：1985-12-31

申请号：US373039

申请日：1982-04-29

申请人： Yasuhiro Maeda ,  Takashi Yokoyama ,  Shinichi Yagihashi

发明人： Yasuhiro Maeda ,  Takashi Yokoyama ,  Shinichi Yagihashi

IPC分类号： C30B11/00 ,  B22D13/00

CPC分类号： C30B11/008 ,  C30B11/00 ,  C30B29/06 ,  C30B29/605

摘要： A method of fabricating a polycrystalline silicon wafer, which method includes the steps of radially outwardly flowing molten liquid of silicon base material on the wafer forming surface of a turntable mechanism by means of centrifugal force, thereby forming a thin molten liquid layer in a prescribed atmosphere, and cooling and solidifying the same. An apparatus for fabricating the wafer is used to carry out the method with a recover tray arranged at the wafer forming surface for receiving the excessive silicon liquid scattered, and a wafer tray placed on the recovery tray. The wafer forming surface is cooled with coolant flowing in the wafer forming mechanism. Thus, large crystalline grains can be grown on the wafer in free states with the atmosphere from the inner surfaces of the casting mold.

摘要翻译： 一种制造多晶硅晶片的方法，该方法包括通过离心力将硅基材料的熔融液体径向向外流动在转盘机构的晶片形成表面上的步骤，从而在规定的气氛中形成薄的熔融液体层 ，并冷却固化。 用于制造晶片的装置用于利用布置在晶片形成表面处的用于接收过量的硅液体散射的回收托盘和放置在回收托盘上的晶片托盘来执行该方法。 晶片形成表面由在晶片形成机构中流动的冷却剂冷却。 因此，大的晶粒可以从模具的内表面的气氛以自由状态在晶片上生长。

公开(公告)号：US4133781A

公开(公告)日：1979-01-09

申请号：US827258

申请日：1977-08-24

申请人： Kaneyoshi Ashida ,  Masaaki Ohtani ,  Takashi Yokoyama ,  Shoichi Ohkubo

发明人： Kaneyoshi Ashida ,  Masaaki Ohtani ,  Takashi Yokoyama ,  Shoichi Ohkubo

IPC分类号： C08G18/00 ,  C08G18/02 ,  C08G18/38 ,  C08G18/50 ,  C08J9/00

CPC分类号： C08G18/5096 ,  C08G18/3893 ,  C08G18/3895 ,  C08G2105/02 ,  Y10S521/902

摘要： A smoke-retardant polyisocyanurate foam which contains an organosilicate having hydroxypolyoxyalkylene group which is obtained by reacting a polyoxyalkyleneglycol with at least one of metallic silicon, halosilicon compounds and lower alkyl silicates.

摘要翻译： 一种阻燃聚异氰脲酸酯泡沫体，其含有具有羟基聚氧化烯基团的有机硅酸盐，所述有机硅酸盐是通过使聚氧亚烷基二醇与金属硅，卤硅化合物和低级烷基硅酸盐中的至少一种反应得到的。

公开(公告)号：US08998785B2

公开(公告)日：2015-04-07

申请号：US13217555

申请日：2011-08-25

申请人： Eiji Nakamura ,  Akihiko Kadota ,  Takashi Yokoyama

发明人： Eiji Nakamura ,  Akihiko Kadota ,  Takashi Yokoyama

IPC分类号： B23Q3/157 ,  B23B29/034

CPC分类号： B23Q3/15713 ,  B23B29/03421 ,  B23B29/03425 ,  B23B29/03432 ,  B23Q3/1574 ,  Y10T408/76 ,  Y10T408/856 ,  Y10T408/85843 ,  Y10T483/12 ,  Y10T483/13 ,  Y10T483/15 ,  Y10T483/1738

摘要： A tool radius adjusting device executes an operation for adjusting the tool radius of a boring holder in parallel with execution of a machining program for executing an operation of a spindle head and an operation of a tool changer. A carrier control unit determines whether the tool changer is executing a tool changing process. When the tool changing process is not being executed, the carrier control unit allows the carrier device to execute an operation for picking the boring holder out from the tool magazine and an operation for returning the boring holder, of which the tool radius has been adjusted, to the tool magazine.

摘要翻译： 刀具半径调节装置执行与执行用于执行主轴头的操作的加工程序和刀具更换器的操作并行地调整镗刀架的刀具半径的操作。 载体控制单元确定换刀器是否正在执行换刀过程。 当不执行换刀过程时，承运人控制单元允许承运人装置执行从工具仓中取出镗刀架的操作和用于使已经调整了刀具半径的镗刀架返回的操作， 到工具杂志。