公开(公告)号：US20060024439A2

公开(公告)日：2006-02-02

申请号：US10463309

申请日：2003-06-16

Applicant: MARKO TUOMINEN ,  ERIC SHERO ,  MOHITH VERGHESE

Inventor： MARKO TUOMINEN ,  ERIC SHERO ,  MOHITH VERGHESE

IPC: C23C16/00

CPC classification number: C23C16/4481 ,  C23C16/405 ,  C23C16/4483 ,  C23C16/45525

Abstract: Abstract of the Disclosure An apparatus and method improves heating of a solid precursor inside a sublimation vessel. In one embodiment, inert, thermally conductive elements are interspersed among units of solid precursor. For example the thermally conductive elements can comprise a powder, beads, rods, fibers, etc. In one arrangement, microwave energy can directly heat the thermally conductive elements.

Abstract translation: 发明内容一种装置和方法改善了升华容器内固体前体的加热。 在一个实施例中，惰性导热元件分散在固体前体单元中。 例如，导热元件可以包括粉末，珠，棒，纤维等。在一种布置中，微波能量可以直接加热导热元件。

公开(公告)号：US06933225B2

公开(公告)日：2005-08-23

申请号：US10253859

申请日：2002-09-23

Applicant: Christiaan J. Werkhoven ,  Ivo Raaijmakers ,  Suvi P. Haukka

Inventor： Christiaan J. Werkhoven ,  Ivo Raaijmakers ,  Suvi P. Haukka

IPC: C23C16/30 ,  C23C16/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/48 ,  C30B25/14 ,  H01L21/28 ,  H01L21/285 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L29/51 ,  H01L21/4763

CPC classification number: H01L21/28185 ,  C23C16/029 ,  C23C16/34 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45534 ,  C30B25/14 ,  H01L21/0214 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/31641 ,  H01L21/3185 ,  H01L21/76846 ,  H01L21/76873 ,  H01L21/76879 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L2221/1089 ,  H01L2924/0002 ,  Y10T428/24942 ,  Y10T428/2495 ,  H01L2924/00

Abstract: Thin films are formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g., in separate pulses, and the copper source pulses can gradually increase in frequency, forming a graded transition region, until pure copper is formed at the upper surface. Advantageously, graded compositions in these and a variety of other contexts help to avoid such problems as etch rate control, electromigration and non-ohmic electrical contact that can occur at sharp material interfaces.

Abstract translation: 通过原子层沉积形成薄膜，由此膜的组成可以在包括自限制化学的交替脉冲的循环期间从单层变化到单层。 在所示实施例中，在循环过程中引入了不同量的杂质源。 因此，即使对于非常薄的层也提供了梯度栅极电介质。 薄的2nm的栅极电介质可以从纯氧化硅到氧氮化物变化为氮化硅。 类似地，栅极电介质可以从氧化铝到氧化铝和较高介电材料（例如ZrO 2）的混合物变化为纯高k材料并返回到氧化铝。 在另一个实施例中，金属氮化物（例如，WN）首先形成为用于衬里双镶嵌沟槽和通孔的屏障。 在交替沉积过程中，铜可以被引入，例如分开的脉冲，并且铜源脉冲可以逐渐增加频率，形成渐变过渡区，直到在上表面形成纯铜。 有利的是，这些和各种其他情况下的分级组合物有助于避免诸如在尖锐材料界面处可能发生的蚀刻速率控制，电迁移和非欧姆电接触等问题。

公开(公告)号：US06887795B2

公开(公告)日：2005-05-03

申请号：US10300169

申请日：2002-11-19

Applicant: Pekka J. Soininen ,  Kai-Erik Elers ,  Suvi Haukka

Inventor： Pekka J. Soininen ,  Kai-Erik Elers ,  Suvi Haukka

IPC: H01L21/285 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/302 ,  H01L21/461

CPC classification number: H01L21/76843 ,  H01L21/02068 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76823 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76883 ,  H01L21/76886 ,  H01L2224/32245 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2924/00011 ,  H01L2924/12044 ,  H01L2924/00 ,  H01L2924/01005

Abstract: This invention relates to manufacturing of integrated circuits (ICs) and especially conductive layers suitable for use in an IC. According to the preferred method a metal oxide thin film is deposited on a substrate surface and reduced thereafter essentially into a metallic form with an organic reducing agent. The metal oxide is preferably deposited according to the principles of atomic layer deposition (ALD) using a metal source chemical and an oxygen source chemical. The reduction step is preferably carried out in an ALD reactor using one or more vaporized organic compounds that contain at least one functional group selected from the group consisting of —OH, —CHO and —COOH.

Abstract translation: 本发明涉及集成电路（IC）的制造，特别是适用于IC中的导电层。 根据优选的方法，将金属氧化物薄膜沉积在基材表面上，然后用有机还原剂基本上还原成金属形式。 金属氧化物优选根据原子层沉积（ALD）的原理使用金属源化学品和氧源化学品沉积。 还原步骤优选在ALD反应器中使用一种或多种含有至少一种选自-OH，-CHO和-COOH的官能团的汽化有机化合物进行。

公开(公告)号：US6132207A

公开(公告)日：2000-10-17

申请号：US202227

申请日：1998-12-09

Applicant: Jeroen Jan Stoutjesdijk

Inventor： Jeroen Jan Stoutjesdijk

IPC: F16K17/18 ,  B01J4/00 ,  F27D17/00 ,  F27B5/04

CPC classification number: B01J4/008

Abstract: Discharge system for a reactor, such as a furnace. The discharge system comprises a collection duct, to which a number of discharge lines are connected, each discharge line in turn being coupled to an installation, such as a furnace. In order to keep the reduced pressure at the location of a furnace of this nature as constant as possible, it is proposed to provide a valve at the location of the reactor, which valve adjusts an opening between the discharge line and atmosphere in a controllable manner. In this way, a controlled reduced pressure can be maintained at the location of the valve, i.e. at the outlet from the reactor.

Abstract translation: PCT No.PCT / NL98 / 00204 Sec。 371 1998年12月9日第 102（e）日期1998年12月9日PCT提交1998年4月9日PCT公布。 WO98 / 46345 PCT公开号 日期1998年10月22日反应堆的放电系统，如炉。 排放系统包括收集管道，多个排出管线连接到该收集管道，每个排出管路依次连接到诸如炉子的装置。 为了保持在这种性质的炉子的位置处的减压力尽可能的恒定，建议在反应器的位置设置一个阀门，该阀门以可控的方式调节排放管线和大气之间的开口 。 以这种方式，可以在阀的位置，即在反应器的出口处保持受控的减压。

公开(公告)号：US5354433A

公开(公告)日：1994-10-11

申请号：US768319

申请日：1991-11-19

Applicant: Ernst H. A. Granneman ,  Laurens F. T. Kwakman ,  Hans W. Piekaar ,  Boudewijn G. Sluijk

Inventor： Ernst H. A. Granneman ,  Laurens F. T. Kwakman ,  Hans W. Piekaar ,  Boudewijn G. Sluijk

IPC: C23C16/20 ,  C23C16/44 ,  C23C16/448 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  B01D3/00

CPC classification number: C23C16/20 ,  C23C16/4402 ,  C23C16/4485 ,  Y10S159/10

Abstract: Method for providing a proportioned gas flow of triisobutylaluminum from liquid triisobutylaluminum having isobutene admixed therein. The liquid is preheated sufficiently to evaporate the isobutene therefrom but leaving the triisobutylaluminum substantially in liquid phase. The vaporized isobutene is separated from the liquid triisobutylaluminum, and subsequently the triisobutylaluminum from which isobutene has been removed is evaporated. Preheating is conducted at a temperature of 30.degree.-40.degree. C. The evaporation of liquid triisobutylaluminum is conducted at a temperature of 40.degree.-60.degree. C.

Abstract translation: PCT No.PCT / NL90 / 00042 Sec。 371日期：1991年11月19日 102（e）日期1991年11月19日PCT 1990年4月30日PCT PCT。 WO90 / 12900 PCT出版物 日本1990年11月1日。从混合有异丁烯的液体三异丁基铝中提供三异丁基铝的比例气流的方法。 液体被充分预热以从其中蒸发异丁烯，但使三异丁基铝基本上处于液相。 蒸发的异丁烯与液体三异丁基铝分离，随后蒸发除去异丁烯的三异丁基铝。 预热在30〜40℃的温度下进行。液体三异丁基铝的蒸发在40〜60℃的温度下进行。

公开(公告)号：US5294572A

公开(公告)日：1994-03-15

申请号：US752487

申请日：1991-11-01

Applicant: Ernst H. A. Granneman ,  Hans W. Piekaar ,  Hubertus A. Corsius ,  Boudewijn G. Sluijk

Inventor： Ernst H. A. Granneman ,  Hans W. Piekaar ,  Hubertus A. Corsius ,  Boudewijn G. Sluijk

IPC: H01L21/203 ,  H01L21/00 ,  H01L21/205 ,  H01L21/677 ,  B08B3/12 ,  C23C16/00

CPC classification number: H01L21/67167 ,  H01L21/67184 ,  H01L21/67778 ,  Y10S148/017 ,  Y10S438/908

Abstract: Method and apparatus for the batchwise simultaneous treatment of several substrates by chemical vapor deposition. The method is carried out in a closed system and before the deposition treatment, the substrates are subjected to a cleaning treatment in the same system.

Abstract translation: PCT No.PCT / NL90 / 00027 Sec。 371日期1991年11月1日 102（e）日期1991年11月1日PCT 1990年3月6日PCT PCT。 出版物WO90 / 10949 1990年9月20日，通过化学气相沉积分批同时处理多个基板的方法和装置。 该方法在封闭系统中进行，并且在沉积处理之前，在相同的系统中对基板进行清洁处理。

公开(公告)号：US11814400B2

公开(公告)日：2023-11-14

申请号：US17383825

申请日：2021-07-23

Applicant: ASM INTERNATIONAL N.V.

Inventor： Viljami Pore ,  Timo Hatanpaa ,  Mikko Ritala ,  Markku Leskelä

IPC: C07F11/00 ,  C23C16/30 ,  C23C16/455 ,  H10N70/00 ,  H10N70/20 ,  H01L21/02

CPC classification number: C07F11/005 ,  C23C16/306 ,  C23C16/45553 ,  H10N70/023 ,  H10N70/231 ,  H10N70/826 ,  H10N70/8825 ,  H10N70/8828 ,  H01L21/0256 ,  H01L21/0262 ,  H01L21/02562 ,  Y02P20/582

Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se—containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

公开(公告)号：US20230031720A1

公开(公告)日：2023-02-02

申请号：US17653940

申请日：2022-03-08

Applicant: ASM INTERNATIONAL N.V.

Inventor： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/22 ,  H01L21/225 ,  H01L21/324

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

公开(公告)号：US11555242B2

公开(公告)日：2023-01-17

申请号：US16460139

申请日：2019-07-02

Applicant: ASM International N.V.

Inventor： Timo Hatanpaa ,  Jaakko Niinisto ,  Mikko Ritala ,  Markku Leskela ,  Suvi Haukka

IPC: C23C16/40 ,  C23C16/455 ,  C07F7/00 ,  C07F17/00 ,  C01G23/07 ,  C01G25/02 ,  C01G27/02

Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

公开(公告)号：US11121014B2

公开(公告)日：2021-09-14

申请号：US16000353

申请日：2018-06-05

Applicant: ASM International N.V.

Inventor： Chris G. M. de Ridder ,  Theodorus G. M. Oosterlaken ,  Adriaan Garssen

IPC: H01L21/673 ,  H01L21/677

Abstract: A dummy wafer storage cassette for storing dummy wafers. The dummy wafer storage cassette may have more than 30 wafer slots for accommodating dummy wafers. The dummy wafer cassette may have substantially the same outer dimensions as a standardized wafer cassette with 25 wafer slots and a pitch of the wafer slots of the dummy wafer storage cassette may be smaller than a pitch between the wafer slots in the standardized wafer cassette.