公开(公告)号：US20150275362A1

公开(公告)日：2015-10-01

申请号：US14531170

申请日：2014-11-03

Applicant: Samsung Display Co., Ltd.

Inventor： Choel Min JANG ,  Suk Won JUNG ,  Myung Soo HUH

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45544 ,  C23C16/4409 ,  C23C16/45525 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/458 ,  C23C16/4585

Abstract: An atomic layer deposition apparatus includes: a substrate support supporting a substrate; a first divider including a plurality of first division modules provided on the substrate support and selectively spraying a source gas, a reaction gas, and a purge gas to each of predetermined areas; and a second divider including a plurality of second division modules provided on the first divider and supplying the gases to the respective first division modules, wherein each of the plurality of second division modules is formed of a first through-hole and a second through-hole, and the gas passed through the first and second through-holes moves to the first division modules.

Abstract translation: 原子层沉积设备包括：支撑衬底的衬底支撑件; 第一分隔器，包括设置在所述基板支撑件上的多个第一分割模块，并且选择性地将源气体，反应气体和吹扫气体喷射到每个预定区域; 以及第二分隔器，其包括设置在所述第一分隔器上的多个第二分割模块，并将气体供应到相应的第一分割模块，其中所述多个第二分割模块中的每一个由第一通孔和第二通孔 并且通过第一和第二通孔的气体移动到第一分割模块。

公开(公告)号：US20150267298A1

公开(公告)日：2015-09-24

申请号：US14659121

申请日：2015-03-16

Applicant: Tokyo Electron Limited

Inventor： Tetsuya SAITOU ,  Tomohiro OOTA ,  Toshio TAKAGI

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/52 ,  C23C16/44 ,  C23C16/458

CPC classification number: C23C16/45565 ,  C23C16/34 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45574 ,  C23C16/458 ,  C23C16/46

Abstract: A film forming apparatus for performing a film forming process by sequentially supplying a plurality of reactant gases to a substrate and supplying a replacement gas includes a mounting table configured to mount thereon a substrate, and a shower head having a flat surface facing the mounting table and a plurality of gas supply opening. An annular protrusion is provided at the shower head to form a gap between the annular protrusion and a top surface of the mounting table. A plurality of gas supply units is provided at a ceiling portion at an upper side of the shower head. Each gas supply unit has gas discharge openings formed along a circumferential direction. The diffusion space is disposed such that an outer periphery of the diffusion space is located at an inner side of an outer periphery of the substrate mounted on the mounting table in a plan view.

Abstract translation: 一种成膜设备，用于通过将多个反应物气体依次供应到基板并供应替换气体来进行成膜过程包括：安装台，其安装在基板上;以及淋浴喷头，其具有面向安装台的平坦表面， 多个供气口。 在喷淋头处设置有环形突起，以在环形突起与安装台的顶表面之间形成间隙。 多个气体供给单元设置在淋浴喷头的上侧的顶部。 每个气体供给单元具有沿圆周方向形成的气体排出开口。 扩散空间被布置成使得扩散空间的外周在平面图中位于安装在安装台上的基板的外周的内侧。

公开(公告)号：US20150225875A1

公开(公告)日：2015-08-13

申请号：US14618519

申请日：2015-02-10

Applicant: Veeco Instruments Inc.

Inventor： Bojan Mitrovic ,  Alexander I. Gurary ,  William E. Quinn ,  Eric A. Armour

IPC: C30B25/14 ,  C30B25/16 ,  C23C16/458 ,  C30B25/12 ,  C23C16/455 ,  C23C16/52

CPC classification number: C30B25/14 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/165

Abstract: In a rotating disk reactor for growing epitaxial layers on substrate or other CVD reactor system, gas directed toward the substrates at gas inlets at different radial distances from the axis of rotation of the disk has both substantially the same gas flow rate/velocity and substantially the same gas density at each inlet. The gas directed toward portions of the disk remote from the axis may include a higher concentration of a reactant gas than the gas directed toward portions of the disk close to the axis, so that portions of the substrate surfaces at different distances from the axis receive substantially the same amount of reactant gas per unit area, and a combination of carrier gases with different relative molecular weights at different radial distances from the axis of rotation are employed to substantially make equal the gas density in each region of the reactor. The system may be applied with a combination or carrier gases at multiple gas inlets, a combination of carrier and reactant gases at multiple inlets, and may be used with an arbitrarily large number of gases, when at least two gases of different molecular weights are provided. A linear flow pattern is achieved within the reactor, avoiding laminar recirculation areas, and permitting uniform deposition and growth of epitaxial layers on the substrate.

Abstract translation: 在用于在衬底或其它CVD反应器系统上生长外延层的旋转盘式反应器中，在与盘的旋转轴线不同的径向距离处的气体入口处朝向衬底的气体具有基本上相同的气体流速/速度， 每个入口气体密度相同。 朝向远离轴的盘的部分的气体可以包括比指向盘的靠近轴的部分的气体更高的反应气体浓度，使得与轴的不同距离处的衬底表面的部分基本上接收 采用相同量的每单位面积的反应气体，以及在与旋转轴线不同的径向距离处具有不同相对分子量的载气的组合基本上使反应器各区域中的气体密度相等。 该系统可以在多个气体入口处的组合或载气施加，多个入口处的载体和反应物气体的组合，并且当提供至少两种不同分子量的气体时，可以与任意大量的气体一起使用 。 在反应器内实现线性流动模式，避免层流再循环区域，并允许外延层在衬底上的均匀沉积和生长。

公开(公告)号：US09087864B2

公开(公告)日：2015-07-21

申请号：US14135307

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Chen-An Chen ,  Tony P. Chiang ,  Frank Greer ,  Martin Romero ,  James Tsung

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/677 ,  H01L21/02

CPC classification number: H01L21/02271 ,  C23C16/04 ,  C23C16/45529 ,  C23C16/45544 ,  C23C16/45574 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/6719 ,  H01L21/67207

Abstract: In some embodiments, apparatus are provided that provide for flexible processing in high productivity combinatorial (HPC) system. The apparatus allow for interchangeable functionality that includes deposition, plasma treatment, ion beam treatment, in-situ annealing, and in-situ metrology. The apparatus are designed so that the functionality may be integrated within a single processing chamber for enhanced flexibility.

Abstract translation: 在一些实施例中，提供了在高生产率组合（HPC）系统中提供灵活处理的装置。 该装置允许可互换的功能，包括沉积，等离子体处理，离子束处理，原位退火和原位计量。 该设备被设计为使得功能可以集成在单个处理室内以增强灵活性。

公开(公告)号：US09074284B2

公开(公告)日：2015-07-07

申请号：US12768191

申请日：2010-04-27

Applicant: Masanao Fukuda ,  Kenji Shirako ,  Akihiro Sato ,  Kazuhiro Morimitsu ,  Sadao Nakashima

Inventor： Masanao Fukuda ,  Kenji Shirako ,  Akihiro Sato ,  Kazuhiro Morimitsu ,  Sadao Nakashima

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/32 ,  C23C16/44 ,  C23C16/455 ,  C30B25/10 ,  C30B25/14 ,  C30B29/36

CPC classification number: C23C16/325 ,  C23C16/4401 ,  C23C16/45574 ,  C30B25/10 ,  C30B25/14 ,  C30B29/36

Abstract: Provided is a heat treatment apparatus that can form films having a uniform thickness on a plurality of substrates. The heat treatment apparatus comprises a process chamber configured to grow silicon carbide (SiC) films on wafers, a boat configured to hold a plurality of wafers in a state where the wafers are vertically arranged and approximately horizontally oriented so as to hold the wafers in the process chamber, a heating unit installed in the process chamber, and a gas supply nozzle configured to supply a reaction gas. The heating unit comprises a susceptor configured to cover at least a part of the boat, and a susceptor wall disposed between the boat and the susceptor.

Abstract translation: 提供一种能够在多个基板上形成均匀厚度的膜的热处理装置。 所述热处理装置包括：处理室，被配置为在晶片上生长碳化硅（SiC）膜;舟状结构，用于在所述晶片垂直布置且大致水平定向的状态下保持多个晶片，以将所述晶片保持在所述晶片中 处理室，安装在处理室中的加热单元和构造成供应反应气体的气体供给喷嘴。 加热单元包括构造成覆盖船的至少一部分的基座和设置在船和基座之间的基座壁。

公开(公告)号：US20150167164A1

公开(公告)日：2015-06-18

申请号：US14405958

申请日：2013-07-08

Applicant: BENEQ OY

Inventor： Mika Jauhiainen ,  Pekka Soininen

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45544 ,  C23C16/45517 ,  C23C16/45525 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/45574 ,  C23C16/458 ,  C23C16/54 ,  C23C16/545

Abstract: The present invention relates to an apparatus and method for processing a surface of a substrate by subjecting the surface to successive surface reactions of a first and second precursor. The apparatus includes a nozzle head having two or more precursor nozzles and a moving mechanism for moving the nozzle head in non-linear oscillating movement in a first and second movement direction between a first extreme position and a second extreme position via a centre position. The moving mechanism includes first driving means for accelerating the nozzle head in the first moving direction and decelerating the nozzle head in the second moving direction and second driving means for accelerating the nozzle head in the second moving direction and decelerating the nozzle head in the first moving direction.

Abstract translation: 本发明涉及通过使表面经受第一和第二前体的连续表面反应来处理基材表面的装置和方法。 该装置包括具有两个或更多个前体喷嘴的喷嘴头和用于通过中心位置在第一极限位置和第二极限位置之间沿第一和第二移动方向以非线性振荡运动移动喷嘴头的移动机构。 移动机构包括第一驱动装置，用于在第一移动方向上加速喷嘴头并使喷嘴头沿第二移动方向减速;第二驱动装置，用于在第二移动方向上加速喷嘴头，并在第一移动中使喷嘴头减速 方向。

公开(公告)号：US20150122357A1

公开(公告)日：2015-05-07

申请号：US14596289

申请日：2015-01-14

Applicant: APPLIED MATERIALS, INC.

Inventor： DAVID K. CARLSON

IPC: F17D1/04

CPC classification number: H01J37/3244 ,  C23C16/45565 ,  C23C16/45574 ,  F17D1/04 ,  H01J37/32633 ,  Y10T137/6579 ,  Y10T137/85938 ,  Y10T137/87153 ,  Y10T137/87265 ,  Y10T137/87281 ,  Y10T137/87885

Abstract: A gas dispersion apparatus for use with a process chamber, comprising: a quartz body having a top, a ring coupled to a bottom surface of the top and a bottom plate having dispersion holes coupled to the ring opposite the top; a plurality of quartz plates disposed between the top and the bottom plate, wherein the plurality of plates are positioned above one another and spaced apart to form a plenum above each of the plurality of plates and the bottom plate; a plurality of quartz tubes to couple the plenums to the plurality of dispersion holes, each of the plurality of quartz tubes having a first end disposed within one of the plenums and having a second end coupled to one of the dispersion holes; and a plurality of conduits disposed through the top, wherein each of the plurality of conduits is coupled to one of the plenums.

Abstract translation: 一种与处理室一起使用的气体分散装置，包括：具有顶部的石英体，联接到顶部的底部表面的环和具有与顶部相对的环的分隔孔的底板; 设置在所述顶板和所述底板之间的多个石英板，其中所述多个板彼此相互间隔开并间隔开，以在所述多个板和所述底板的每一个上方形成气室; 多个石英管，用于将所述通风室连接到所述多个分散孔，所述多个石英管中的每一个具有设置在一个所述增压室内的第一端，并且具有联接到所述分散孔中的一个的第二端; 以及多个通过所述顶部布置的导管，其中所述多个导管中的每一个连接到所述增压室之一。

公开(公告)号：US20150059978A1

公开(公告)日：2015-03-05

申请号：US14388914

申请日：2013-03-26

Applicant: Kookje Electric Korea Co., Ltd.

Inventor： Yong Sung Park ,  Sung Kwang Lee ,  Dong Yeul Kim ,  Ki Hoon Kim

IPC: C30B25/14 ,  H01L21/67 ,  C30B25/10

CPC classification number: C30B25/14 ,  C23C16/04 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/54 ,  C30B25/10 ,  C30B29/06 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67757

Abstract: Provide an apparatus for selective epitaxial growth. The apparatus for selective epitaxial growth, the apparatus comprising, a process tube comprising an inner tube in which a substrate stack unit for receiving a plurality of substrates is accommodated and an outer tube surrounding the inner tube, a heater assembly disposed to surround the process tube and a side nozzle unit vertically disposed inside the process tube, wherein the side nozzle unit comprises first and second side nozzles for respectively spraying an etching gas and a depo gas for the selective epitaxial growth.

Abstract translation: 提供选择性外延生长的设备。 用于选择性外延生长的装置，该装置包括：处理管，其包括内管，其中容纳用于容纳多个基板的基板堆叠单元和围绕内管的外管;加热器组件，设置成围绕处理管 以及垂直设置在处理管内的侧喷嘴单元，其中侧喷嘴单元包括用于分别喷射蚀刻气体和用于选择性外延生长的沉积气体的第一和第二侧面喷嘴。

公开(公告)号：US20150037920A1

公开(公告)日：2015-02-05

申请号：US14518948

申请日：2014-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Sun MAENG ,  Young Sun KIM ,  Hyun Wook SHIM ,  Sung Tae KIM

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  C23C16/45502 ,  C23C16/45517 ,  C23C16/45563 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/4558 ,  C23C16/45591 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4585 ,  H01L33/0066 ,  H01L2933/0016

Abstract: A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.

Abstract translation: 化学气相沉积装置包括：反应室，包括具有预定体积的内部空间的内管和紧密地密封内管的外管; 设置在所述内管内并且以预定间隔堆叠多个晶片的晶片保持架; 以及气体供给单元，其包括向反应室供给外部反应气体的至少一个气体管线，以及与气体管线连通的多个喷嘴，以将反应气体喷射到晶片，由此在其上生长半导体外延薄膜 晶片的表面，其中在晶片表面上生长的半导体外延薄膜包括其中顺序形成第一导电型半导体层，有源层和第二导电型半导体层的发光结构 。

公开(公告)号：US20150013607A1

公开(公告)日：2015-01-15

申请号：US14262196

申请日：2014-04-25

Applicant: Novellus Systems, Inc.

Inventor： Jason Dirk Haverkamp ,  Pramod Subramonium ,  Joseph L. Womack ,  Dong Niu ,  Keith Fox ,  John B. Alexy ,  Patrick G. Breiling ,  Jennifer L. Petraglia ,  Mandyam A. Sriram ,  George Andrew Antonelli ,  Bart J. van Schravendijk

IPC: C23C16/50 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/50 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/509 ,  C23C16/52 ,  C23C16/54 ,  H01J37/32137 ,  H01J37/32155 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

Abstract translation: 描述了一种用于原位沉积薄膜叠层（即没有真空断裂或空气曝光）的设备。 在一个示例中，提供了一种等离子体增强化学气相沉积设备，其被配置为在基板上沉积多个膜层而不将基板暴露于膜沉积阶段之间的真空断裂。 该装置包括处理室，等离子体源和被配置为在特定沉积阶段期间使用特定反应气体混合物来控制等离子体源以产生反应物自由基的控制器，并且在从期间提供的特定反应气体混合物的转变期间维持等离子体 在不同沉积阶段期间提供的不同反应气体混合物的特定沉积阶段。