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    Deposition methods
    61.
    发明授权
    Deposition methods 有权
    沉积方法

    公开(公告)号：US06458416B1

    公开(公告)日：2002-10-01

    申请号：US09619449

    申请日：2000-07-19

    申请人： Garo J. Derderian ,  Gurtej S. Sandhu

    发明人： Garo J. Derderian ,  Gurtej S. Sandhu

    IPC分类号： B05D136

    CPC分类号： C23C16/45525 ,  B05D1/185 ,  C23C16/04 ,  C23C16/045 ,  C23C16/403 ,  C23C16/45531 ,  C30B25/18 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3162

    摘要： A deposition method includes contacting a substrate with a first initiation precursor and forming a first portion of an initiation layer on the substrate. At least a part of the substrate is contacted with a second initiation precursor different from the first initiation precursor and a second portion of the initiation layer is formed on the substrate. The substrate may be simultaneously contacted with a plurality of initiation precursors, forming on the substrate and initiation layer comprising components derived from each of the plurality of initiation precursors. An initiation layer may be contacted with a deposition precursor, forming a deposition layer on the initiation layer. The deposition layer may be contacted with a second initiation precursor different from the first initiation precursor forming a second initiation layer over the substrate. Also, a first initiation layer may be formed substantially selectively on a first-type substrate surface relative to a second-type substrate surface and contacted with a deposition precursor, forming a deposition layer substantially selectively over the first-type substrate surface.

    摘要翻译： 沉积方法包括使基底与第一起始前体接触，并在基底上形成起始层的第一部分。 基板的至少一部分与不同于第一起始前体的第二起始前体接触，并且在基板上形成起始层的第二部分。 衬底可以与多个起始前体同时接触，在衬底上形成并且起始层包含衍生自多个起始前体中的每一个的成分。 引发层可以与沉积前体接触，在引发层上形成沉积层。 沉积层可以与不同于第一起始前体的第二引发前体接触，从而在衬底上形成第二起始层。 此外，第一起始层可以基本上选择性地形成在相对于第二类型衬底表面的第一类型衬底表面上，并与沉积前体接触，在第一类型衬底表面上基本上选择性地形成沉积层。

    Surface preparation prior to deposition
    63.
    发明申请
    Surface preparation prior to deposition 有权
    沉积前的表面处理

    公开(公告)号：US20020098627A1

    公开(公告)日：2002-07-25

    申请号：US09944734

    申请日：2001-08-31

    发明人： Christophe F. Pomarede ,  Jeff Roberts ,  Eric J. Shero

    IPC分类号： H01L021/00 ,  H01L021/84

    CPC分类号： H01L21/28185 ,  C23C16/0218 ,  C23C16/0245 ,  C23C16/22 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/28017 ,  H01L21/28035 ,  H01L21/2807 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/3162 ,  H01L21/32055 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

    摘要： Methods are provided herein for treating substrate surfaces in preparation for subsequent nucleation-sensitive depositions (e.g., polysilicon or poly-SiGe) and adsorption-driven deposition (e.g. atomic layer deposition or ALD). Prior to depositing, the surface is treated with non-depositing plasma products. The treated surface more readily nucleates polysilicon and poly-SiGe (such as for a gate electrode), or more readily adsorbs ALD reactants (such as for a gate dielectric). The surface treatment provides surface moieties more readily susceptible to a subsequent deposition reaction, or more readily susceptible to further surface treatment prior to deposition. By changing the surface termination of the substrate with a low temperature radical treatment, subsequent deposition is advantageously facilitated without depositing a layer of any appreciable thickness and without significantly affecting the bulk properties of the underlying material. Preferably less than 10 null of the bulk material incorporates the excited species, which can include fluorine, chlorine and particularly nitrogen excited species.

    摘要翻译： 本文提供了用于处理底物表面以准备随后的成核敏感沉积（例如多晶硅或多晶硅）和吸附驱动沉积（例如原子层沉积或ALD）的方法。 在沉积之前，用非沉积等离子体产物处理表面。 经处理的表面更容易地成核多晶硅和多晶硅（例如用于栅电极），或更容易地吸附ALD反应物（例如用于栅极电介质）。 表面处理提供对随后的沉积反应更容易敏感的表面部分，或者更容易在沉积之前容易进行进一步的表面处理。 通过用低温自由基处理改变衬底的表面终止，有利地便于沉积，而不沉积任何相当厚度的层并且不显着影响下面的材料的整体性质。 优选小于10的本体材料包含激发的物质，其可以包括氟，氯和特别是氮激发的物质。

    Capacitor fabrication methods and capacitor constructions
    64.
    发明授权
    Capacitor fabrication methods and capacitor constructions 有权

    公开(公告)号：US06420230B1

    公开(公告)日：2002-07-16

    申请号：US09652532

    申请日：2000-08-31

    申请人： Garo J. Derderian ,  Gurtej S. Sandhu

    发明人： Garo J. Derderian ,  Gurtej S. Sandhu

    IPC分类号： H01L218242

    CPC分类号： H01L21/3162 ,  H01L21/02178 ,  H01L21/0228 ,  H01L28/56 ,  H01L28/84 ,  H01L28/91

    摘要： A capacitor fabrication method may include forming a first capacitor electrode over a substrate and atomic layer depositing an insulative barrier layer to oxygen diffusion over the first electrode. A capacitor dielectric layer may be formed over the first electrode and a second capacitor electrode may be formed over the dielectric layer. The barrier layer may include Al2O3. A capacitor fabrication method may also include forming a first capacitor electrode over a substrate, chemisorbing a layer of a first precursor at least one monolayer thick over the first electrode, and chemisorbing a layer of a second precursor at least one monolayer thick on the first precursor layer. A chemisorption product of the first and second precursors may be comprised by a layer of an insulative barrier material. The first precursor may include H2O and the second precursor may include trimethyl aluminum.

    Forming electrolyte for forming metal oxide coating film
    66.
    发明授权
    Forming electrolyte for forming metal oxide coating film 失效
    形成用于形成金属氧化物涂膜的电解质

    公开(公告)号：US06368485B1

    公开(公告)日：2002-04-09

    申请号：US09570557

    申请日：2000-05-12

    申请人： Makoto Ue ,  Fumikazu Mizutani ,  Sachie Takeuchi ,  Hiroshi Takaha

    发明人： Makoto Ue ,  Fumikazu Mizutani ,  Sachie Takeuchi ,  Hiroshi Takaha

    IPC分类号： C25D300

    CPC分类号： H01L21/31687 ,  C25D11/10 ,  H01L21/3162

    摘要： Disclosed is a forming electrolyte for forming metal oxide coating films which comprises one or more kinds of solutes selected from the group consisting a salt of inorganic acid and salt of organic carboxylic acid dissolved in a solvent having analcoholic hydroxyl group or aprotic organic solvent, provided that, when the solvent having an alcoholic hydroxyl group is selected, the salt of organic carboxylic acid is selected from salts of aromatic carboxylic acids, salts of aliphatic polycarboxylic acid having 3-5 carbon atoms with no hydroxyl groups, salts of monohydroxy carboxylic acid having 2-5 carbon atoms, and salts of amino acid. By anodically oxidizing metal using the forming electrolyte, there can be formed an oxide coating film of high insulation property with a high throughput, in which hillocks are effectively suppressed.

    摘要翻译： 公开了一种用于形成金属氧化物涂膜的成形电解质，其包含一种或多种溶剂，其选自无机酸盐和有机羧酸盐溶解在具有醇羟基或非质子有机溶剂的溶剂中的溶质，条件是 当选择具有醇羟基的溶剂时，有机羧酸的盐选自芳族羧酸的盐，具有3-5个碳原子的没有羟基的脂族多羧酸的盐，一羟基羧酸的盐具有2 -5个碳原子，和氨基酸的盐。 通过使用形成电解质对金属进行阳极氧化，可以形成具有高通量的高绝缘性的氧化膜，其中有效地抑制了小丘。

    Capacitor fabrication methods and capacitor constructions
    67.
    发明申请
    Capacitor fabrication methods and capacitor constructions 失效
    电容器制造方法和电容器结构

    公开(公告)号：US20020025628A1

    公开(公告)日：2002-02-28

    申请号：US09882534

    申请日：2001-06-14

    发明人： Garo J. Derderian ,  Gurtej S. Sandhu

    IPC分类号： H01L021/8242

    CPC分类号： H01L21/3162 ,  H01L21/02178 ,  H01L21/0228 ,  H01L28/56 ,  H01L28/84 ,  H01L28/91

    摘要： A capacitor fabrication method may include forming a first capacitor electrode over a substrate and atomic layer depositing an insulative barrier layer to oxygen diffusion over the first electrode. A capacitor dielectric layer may be formed over the first electrode and a second capacitor electrode may be formed over the dielectric layer. The barrier layer may include Al2O3. A capacitor fabrication method may also include forming a first capacitor electrode over a substrate, chemisorbing a layer of a first precursor at least one monolayer thick over the first electrode, and chemisorbing a layer of a second precursor at least one monolayer thick on the first precursor layer. A chemisorption product of the first and second precursors may be comprised by a layer of an insulative barrier material. The first precursor may include H2O and the second precursor may include trimethyl aluminum.

    摘要翻译： 电容器制造方法可以包括在衬底上形成第一电容器电极，并且将原子层沉积在第一电极上的氧扩散的绝缘阻挡层上。 可以在第一电极上形成电容器电介质层，并且可以在电介质层上形成第二电容器电极。 阻挡层可以包括Al 2 O 3。 电容器制造方法还可以包括在衬底上形成第一电容器电极，在第一电极上化学吸附至少一层单层厚度的第一前体层，以及化学吸附第一前体上的至少一层单层的第二前体层 层。 第一和第二前体的化学吸附产物可以由绝缘屏障材料层构成。 第一前体可以包括H 2 O，第二前体可以包括三甲基铝。

    Thin film deposition process
    68.
    发明授权
    Thin film deposition process 失效
    薄膜沉积工艺

    公开(公告)号：US5045348A

    公开(公告)日：1991-09-03

    申请号：US295212

    申请日：1989-01-05

    申请人： Crofton J. Brierley ,  Clive Trundle

    发明人： Crofton J. Brierley ,  Clive Trundle

    IPC分类号： C23C16/40 ,  C23C16/48 ,  H01L21/268 ,  H01L21/316

    CPC分类号： H01L21/02178 ,  C23C16/403 ,  C23C16/482 ,  H01L21/02205 ,  H01L21/02277 ,  H01L21/268 ,  H01L21/31604 ,  H01L21/3162

    摘要： A thin film deposition process for depositing a metal oxide layer onto a substrate body, the process comprising the steps of taking a metal organic compound in vapor form, the compound being capable of absorbing light in the wavelength range of 240 to 400 nanometers, heating the substrate to a temperature below the pyrolytic decomposition temperature of the compound in the presence of the vapor, directing light towards the substrate to cause a photochemical fragmentation of said vapor molecules, the reaction resulting in a deposition of the required oxide on said substrate.The metal organic compound may be a metal alkoxy substituted beta-diketonate such as aluminium diisopropoxide acetyl acetonate.

    摘要翻译： PCT No.PCT / GB88 / 00228 Sec。 371日期1989年1月5日第 102（e）日期1989年1月5日PCT PCT 3月25日PCT公布。 公开号WO88 / 07759 日期：1988年10月6日。一种用于将金属氧化物层沉积到衬底主体上的薄膜沉积工艺，该方法包括以蒸气形式吸收金属有机化合物的步骤，该化合物能够吸收波长范围内的光 240至400纳米，在蒸气存在下将基底加热到低于化合物的热解分解温度的温度，将光引向基底以导致所述蒸汽分子的光化学碎裂，所述反应导致所需的 氧化物。 金属有机化合物可以是金属烷氧基取代的β-二酮，如二异丙氧基铝乙酰丙酮铝。