公开(公告)号：US20160322479A1

公开(公告)日：2016-11-03

申请号：US14698921

申请日：2015-04-29

Applicant: STMicroelectronics, Inc.

Inventor： Qing Liu ,  Salih Muhsin Celik

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/51 ,  H01L29/165 ,  H01L29/78

CPC classification number: H01L29/66977 ,  H01L29/0649 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/165 ,  H01L29/4941 ,  H01L29/513 ,  H01L29/516 ,  H01L29/66356 ,  H01L29/7391 ,  H01L29/7851

Abstract: A tunneling field effect transistor is formed from a fin of semiconductor material on a support substrate. The fin of semiconductor material includes a source region, a drain region and a channel region between the source region and drain region. A gate electrode straddles over the fin at the channel region. Sidewall spacers are provided on each side of the gate electrode. The source of the transistor is made from an epitaxial germanium content source region grown from the source region of the fin and doped with a first conductivity type. The drain of the transistor is made from an epitaxial silicon content drain region grown from the drain region of the fin and doped with a second conductivity type.

Abstract translation: 隧道场效应晶体管由支撑基板上的半导体材料的翅片形成。 半导体材料的鳍片包括源极区域，漏极区域和源极区域与漏极区域之间的沟道区域。 栅极电极横跨在通道区域上的翅片上。 在栅电极的每一侧设置侧壁间隔物。 晶体管的源极由从鳍片的源极区域生长并掺杂有第一导电类型的外延锗含量源区域制成。 晶体管的漏极由从鳍片的漏极区域生长并掺杂有第二导电类型的外延硅含量漏极区域制成。

公开(公告)号：US09462538B2

公开(公告)日：2016-10-04

申请号：US14520828

申请日：2014-10-22

Applicant: STMICROELECTRONICS, INC. ,  STMICROELECTRONICS S.R.L.

Inventor： Liwen Chu ,  George A. Vlantis ,  Vincenzo Scarpa

IPC: H04L12/28 ,  H04W48/14 ,  H04W72/12 ,  H04W84/18 ,  H04W40/34 ,  H04W48/08 ,  H04W72/02 ,  H04W84/12 ,  H04W84/22

CPC classification number: H04W48/14 ,  H04W40/34 ,  H04W48/08 ,  H04W72/02 ,  H04W72/1252 ,  H04W84/12 ,  H04W84/18 ,  H04W84/22 ,  Y02D70/142 ,  Y02D70/22

Abstract: The addition of high throughput capability elements to beacon frames and peer link action frames in wireless mesh networks enable the utilization of desirable features without further modifications to the network. Rules can be established for high throughput mesh point protection in a mesh network, Space-time Block Code (STBC) operations and 20/40 MHz operation selections. However, features such as PSMP (power save multi-poll) and PCO (phased coexistence operations) are barred from implementation to prevent collisions.

公开(公告)号：US09431934B2

公开(公告)日：2016-08-30

申请号：US14247955

申请日：2014-04-08

Applicant: STMICROELECTRONICS, INC. ,  STMICROELECTRONICS S.r.l.

Inventor： Frederic Bonvin ,  Ezio Galbiati

IPC: H02P6/10 ,  G11B19/20 ,  H02P6/08 ,  H02P6/18

CPC classification number: H02P6/10 ,  G11B19/20 ,  H02P6/085 ,  H02P6/18

Abstract: An embodiment of a motor controller includes a motor driver and a signal conditioner. The motor driver is operable to generate a motor-coil drive signal having a first component at a first frequency, and the signal conditioner is coupled to the motor driver and is operable to alter the first component. For example, if the first component of the motor-coil drive signal causes the motor to audibly vibrate (e.g., “whine”), then the signal conditioner may alter the amplitude or phase of the first component to reduce the vibration noise to below a threshold level.

Abstract translation: 马达控制器的实施例包括马达驱动器和信号调节器。 马达驱动器可操作以产生具有第一频率的第一分量的电动机线圈驱动信号，并且信号调节器耦合到马达驱动器并且可操作以改变第一分量。 例如，如果电动机线圈驱动信号的第一分量使得电动机听起来振动（例如，“呜呜”），则信号调节器可以改变第一组件的幅度或相位，以将振动噪声降低到低于 门限等级。

公开(公告)号：US09431540B2

公开(公告)日：2016-08-30

申请号：US14288766

申请日：2014-05-28

Applicant: STMICROELECTRONICS, INC. ,  GLOBALFOUNDRIES Inc. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Liu ,  Ruilong Xie ,  Xiuyu Cai ,  Chun-chen Yeh

IPC: H01L29/66 ,  H01L29/165 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/31105 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/165 ,  H01L29/785 ,  H01L29/7851

Abstract: A method for making a semiconductor device includes forming laterally spaced-apart semiconductor fins above a substrate. At least one dielectric layer is formed adjacent an end portion of the semiconductor fins and within the space between adjacent semiconductor fins. A pair of sidewall spacers is formed adjacent outermost semiconductor fins at the end portion of the semiconductor fins. The at least one dielectric layer and end portion of the semiconductor fins between the pair of sidewall spacers are removed. Source/drain regions are formed between the pair of sidewall spacers.

Abstract translation: 制造半导体器件的方法包括在衬底上形成横向间隔开的半导体鳍片。 在半导体鳍片的端部附近和相邻的半导体鳍片之间的空间内形成至少一个电介质层。 在半导体翅片的端部处邻近最外半导体翅片形成一对侧壁间隔物。 去除该对侧壁间隔物之间​​的至少一个电介质层和半导体翅片的端部。 源极/漏极区域形成在该对侧壁间隔物之间​​。

公开(公告)号：US09431538B2

公开(公告)日：2016-08-30

申请号：US14950833

申请日：2015-11-24

Applicant: Commissariat a l'energie atomique et aux energies alternatives ,  STMICROELECTRONICS, Inc.

Inventor： Shay Reboh ,  Pierre Morin

IPC: H01L21/336 ,  H01L29/78 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/7848 ,  H01L29/0649 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66636

Abstract: Method of making at least one transistor strained channel semiconducting structure, comprising steps to form a sacrificial gate block and insulating spacers arranged in contact with the lateral faces of the sacrificial gate block, form sacrificial regions in contact with the lateral faces of said semiconducting zone, said sacrificial regions being configured so as to apply a strain on said semiconducting zone, remove said sacrificial gate block between said insulating spacers, replace said sacrificial gate block by a replacement gate block between said insulating spacers, remove said sacrificial regions, and replace said sacrificial regions by replacement regions in contact with the lateral faces of said semiconducting zone, on a semiconducting zone that will form a transistor channel region.

Abstract translation: 制造至少一个晶体管应变通道半导体结构的方法，包括形成牺牲栅极块的步骤和与牺牲栅极块的侧面接触地布置的绝缘间隔物，形成与所述半导体区域的侧面接触的牺牲区域， 所述牺牲区域被配置为在所述半导体区域上施加应变，去除所述绝缘间隔物之间​​的所述牺牲栅极块，用所述绝缘间隔物之间​​的置换栅极块代替所述牺牲栅极块，去除所述牺牲区域， 区域，其与形成晶体管沟道区域的半导体区域相接触，与所述半导体区域的侧面接触。

公开(公告)号：US09419111B2

公开(公告)日：2016-08-16

申请号：US14748270

申请日：2015-06-24

Applicant: STMICROELECTRONICS, INC.

Inventor： Qing Liu ,  Prasanna Khare ,  Nicolas Loubet

IPC: H01L21/336 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/84 ,  H01L29/78 ,  H01L29/08 ,  H01L21/265 ,  H01L29/417 ,  H01L21/225

CPC classification number: H01L27/0886 ,  H01L21/2253 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/26586 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823821 ,  H01L21/845 ,  H01L29/0847 ,  H01L29/41783 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/785

Abstract: A multi-fin FINFET device may include a substrate and a plurality of semiconductor fins extending upwardly from the substrate and being spaced apart along the substrate. Each semiconductor fin may have opposing first and second ends and a medial portion therebetween, and outermost fins of the plurality of semiconductor fins may comprise an epitaxial growth barrier on outside surfaces thereof. The FINFET may further include at least one gate overlying the medial portions of the semiconductor fins, a plurality of raised epitaxial semiconductor source regions between the semiconductor fins adjacent the first ends thereof, and a plurality of raised epitaxial semiconductor drain regions between the semiconductor fins adjacent the second ends thereof.

公开(公告)号：US09418900B1

公开(公告)日：2016-08-16

申请号：US14800290

申请日：2015-07-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  STMicroelectronics, Inc.

Inventor： Hong He ,  Nicolas Loubet ,  James Kuss ,  Junli Wang

IPC: H01L21/8238

CPC classification number: H01L21/845 ,  H01L21/0217 ,  H01L21/02532 ,  H01L21/30604 ,  H01L21/324 ,  H01L21/823821 ,  H01L21/823857 ,  H01L21/823864 ,  H01L21/823878 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/161

Abstract: A method for forming fins includes growing a SiGe layer and a silicon layer over a surface of a bulk Si substrate, patterning fin structures from the silicon layer and the SiGe layer and filling between the fin structures with a dielectric fill. Trenches are formed to expose end portions of the fin structures. A first region of the fin structures is blocked off. The SiGe layer of the fin structures of a second region is removed by selectively etching the fin structures from the end portions to form voids, which are filled with dielectric material. The silicon layer of the fin structures is exposed. The SiGe layer in the first region is thermally oxidized to drive Ge into the silicon layer to form SiGe fins on an oxide layer in the first region and silicon fins on the dielectric material in the second region.

Abstract translation: 用于形成翅片的方法包括在体Si衬底的表面上生长SiGe层和硅层，从硅层和SiGe层图案化翅片结构，并用电介质填充物填充翅片结构。 形成沟槽以暴露翅片结构的端部。 翅片结构的第一个区域被阻挡。 通过从端部选择性地蚀刻翅片结构来去除第二区域的翅片结构的SiGe层，以形成填充有电介质材料的空隙。 翅片结构的硅层被暴露。 第一区域中的SiGe层被热氧化以将Ge驱动到硅层中，以在第一区域中的氧化物层上形成SiGe散热片，并在第二区域中在介电材料上形成硅散热片。

公开(公告)号：US09406751B2

公开(公告)日：2016-08-02

申请号：US14296818

申请日：2014-06-05

Applicant: STMICROELECTRONICS, INC. ,  GLOBALFOUNDRIES Inc. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Liu ,  Xiuyu Cai ,  Ruilong Xie ,  Chun-chen Yeh

IPC: H01L29/08 ,  H01L27/12 ,  H01L29/786 ,  H01L21/84 ,  H01L21/8238

CPC classification number: H01L21/823807 ,  H01L21/76895 ,  H01L21/823814 ,  H01L21/823871 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0847 ,  H01L29/7842 ,  H01L29/7848 ,  H01L29/786 ,  H01L29/78684

Abstract: A method for making a semiconductor device is provided. Raised source and drain regions are formed with a tensile strain-inducing material, after thermal treatment to form source drain extension regions, to thereby preserve the strain-inducing material in desired substitutional states.

Abstract translation: 提供一种制造半导体器件的方法。 在热处理之后，用拉伸应变诱导材料形成凸起的源极和漏极区域以形成源极漏极延伸区域，从而将应变诱导材料保持在期望的替代状态。

公开(公告)号：US09385195B1

公开(公告)日：2016-07-05

申请号：US14675536

申请日：2015-03-31

Applicant: STMICROELECTRONICS, INC.

Inventor： John H. Zhang

IPC: H01L29/745 ,  H01L27/148 ,  H01L21/00 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/16 ,  H01L29/78 ,  H01L29/10 ,  H01L29/49 ,  H01L29/20 ,  H01L29/66 ,  H01L21/28

CPC classification number: H01L27/10879 ,  B82Y10/00 ,  H01L21/28008 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823871 ,  H01L21/823878 ,  H01L21/823885 ,  H01L21/823892 ,  H01L27/0814 ,  H01L27/092 ,  H01L27/0928 ,  H01L29/0653 ,  H01L29/0676 ,  H01L29/1033 ,  H01L29/16 ,  H01L29/20 ,  H01L29/42392 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/66439 ,  H01L29/66666 ,  H01L29/66795 ,  H01L29/66909 ,  H01L29/66977 ,  H01L29/7391 ,  H01L29/775 ,  H01L29/7827 ,  H01L29/7855 ,  H01L29/7856 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78696 ,  H01L31/0392 ,  H01L33/04 ,  H01L45/1233 ,  H01L2029/7858

Abstract: A vertical tunneling FET (TFET) provides low-power, high-speed switching performance for transistors having critical dimensions below 7 nm. The vertical TFET uses a gate-all-around (GAA) device architecture having a cylindrical structure that extends above the surface of a doped well formed in a silicon substrate. The cylindrical structure includes a lower drain region, a channel, and an upper source region, which are grown epitaxially from the doped well. The channel is made of intrinsic silicon, while the source and drain regions are doped in-situ. An annular gate surrounds the channel, capacitively controlling current flow through the channel from all sides. The source is electrically accessible via a front side contact, while the drain is accessed via a backside contact that provides low contact resistance and also serves as a heat sink. Reliability of vertical TFET integrated circuits is enhanced by coupling the vertical TFETs to electrostatic discharge (ESD) diodes.

Abstract translation: 垂直隧道FET（TFET）为关键尺寸低于7nm的晶体管提供低功耗，高速开关性能。 垂直TFET使用全栅（GAA）器件结构，其具有在形成于硅衬底中的掺杂阱的表面上方延伸的圆柱形结构。 圆柱形结构包括从掺杂阱外延生长的下部漏极区域，沟道和上部源极区域。 该通道由本征硅制成，而源极和漏极区域原位掺杂。 环形栅极围绕通道，电容性地控制从所有侧面通过通道的电流。 源极可以通过前侧触点电接触，而漏极通过背面触点进行访问，该触点提供低接触电阻并且还用作散热器。 垂直TFET集成电路的可靠性通过将垂直TFET耦合到静电放电（ESD）二极管来增强。

公开(公告)号：US09385078B1

公开(公告)日：2016-07-05

申请号：US15064688

申请日：2016-03-09

Applicant: International Business Machines Corporation ,  Tokyo Electron Limited ,  STMicroelectronics, Inc.

Inventor： Yannick Feurprier ,  Joe Lee ,  Lars W. Liebmann ,  Yann Mignot ,  Terry A. Spooner ,  Douglas M. Trickett ,  Mehmet Yilmaz

IPC: H01L23/522 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/0332 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76877 ,  H01L21/76897 ,  H01L23/528 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a via in an integrated circuit comprises patterning a first opening in a first hardmask, the first hardmask disposed on a first organic self-planarizing polymer (OPL) layer, removing an exposed portion of the first OPL layer to define a cavity, removing an exposed portion of a second hardmask in the cavity, removing an exposed portion of a first dielectric layer disposed under the second hardmask to further define the cavity, removing an exposed portion of a first cap layer in the cavity, removing an exposed portion of a second dielectric layer to further define the cavity, removing an exposed portion of a second cap layer to further define the cavity, removing an exposed portion of a liner layer over a second conductive material in the cavity, and depositing a conductive material in the cavity.