公开(公告)号：US20130171350A1

公开(公告)日：2013-07-04

申请号：US13339563

申请日：2011-12-29

Applicant: Philip A. Kraus ,  Tony P. Chiang ,  Timothy Joseph Franklin ,  Chi-I Lang ,  Sandeep Nijhawan

Inventor： Philip A. Kraus ,  Tony P. Chiang ,  Timothy Joseph Franklin ,  Chi-I Lang ,  Sandeep Nijhawan

IPC: C23C16/44 ,  B05C11/00

CPC classification number: C23C16/303 ,  C23C16/45508 ,  C23C16/52

Abstract: A metal-organic chemical vapor deposition (MOCVD) system is provided for high throughput processing. The system comprises a chamber containing a substrate support system comprising a plurality of substrate support planets operable to support one or more substrates, and a gas emission system operable to provide a plurality of isolated environments suitable for depositing uniform layers on the substrates. The MOCVD system is operable to independently vary one or more process parameters in each isolated environment, and to provide common process parameters to all substrates for depositing one or more layers on all substrates. Methods of forming uniform layers on a substrate are provided wherein at least one of the layers is deposited in an isolated environment.

Abstract translation: 提供金属有机化学气相沉积（MOCVD）系统用于高通量处理。 该系统包括容纳基板支撑系统的室，该基板支撑系统包括可操作以支撑一个或多个基板的多个基板支撑行星和可操作以提供适合于在基板上沉积均匀层的多个隔离环境的气体排放系统。 MOCVD系统可操作以独立地改变每个隔离环境中的一个或多个工艺参数，并为所有衬底提供共同的工艺参数，以便在所有衬底上沉积一层或多层。 提供了在衬底上形成均匀层的方法，其中至少一个层在孤立环境中沉积。

公开(公告)号：US20130162995A1

公开(公告)日：2013-06-27

申请号：US13337824

申请日：2011-12-27

Applicant: Shuogang Huang ,  Chi-I Lang ,  Jeffrey Chih-Hou Lowe ,  Wen-Guang Yu

Inventor： Shuogang Huang ,  Chi-I Lang ,  Jeffrey Chih-Hou Lowe ,  Wen-Guang Yu

IPC: G01B11/06 ,  G01J4/00

CPC classification number: G01B11/0641

Abstract: A method of measuring the thickness of a one or more layers using ellipsometry is presented which overcomes problems with fitting a model to data collected in the presence of a top surface having a surface roughness (peak-to-trough) greater than about 100 Å. Prior to measurement, the top layer is pretreated to form an oxide layer of thickness between about 15 Å and about 30 Å. Ellipsometry data as a function of wavelength is then collected, and the ellipsometry data is fitted to a model including the oxide layer. For layers of doped polycrystalline silicon layers with a rough surface, the model comprises a layer consisting of a mixture of polycrystalline silicon and amorphous silicon and a top layer consisting of a mixture of polycrystalline silicon and silicon dioxide, and the pretreatment can be performed for about 10 minutes at 600 C in an oxygen atmosphere.

Abstract translation: 提出了一种使用椭偏仪测量一个或多个层的厚度的方法，该方法克服了在存在具有大于约100的表面粗糙度（峰 - 谷）的顶表面的情况下收集的数据的情况下将模型拟合的问题。 在测量之前，顶层被预处理以形成厚度介于约和之间的氧化物层。 然后收集椭圆偏振数据作为波长的函数，并将椭偏仪数据拟合到包括氧化物层的模型。 对于具有粗糙表面的掺杂多晶硅层的层，该模型包括由多晶硅和非晶硅的混合物组成的层以及由多晶硅和二氧化硅的混合物组成的顶层，并且预处理可以进行约 在氧气氛中在600℃下10分钟。

公开(公告)号：US20130101749A1

公开(公告)日：2013-04-25

申请号：US13281299

申请日：2011-10-25

Applicant: Hong Sheng Yang ,  Chi-I Lang

Inventor： Hong Sheng Yang ,  Chi-I Lang

IPC: C23C14/35

CPC classification number: C23C14/351 ,  C23C14/352 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/3458

Abstract: In one aspect of the invention, a process chamber is provided. The process chamber includes a plurality of sputter guns with a target and a main magnet affixed to one end of each of the sputter guns. A substrate support is disposed at a distance from the plurality of sputter guns. An auxiliary magnet is disposed near the substrate. The auxiliary magnet surrounds an outer peripheral surface of the substrate support. In alternative embodiments the magnet may be disposed in a plate or holder disposed below or above the substrate support. In additional embodiments, the auxiliary magnet may be embedded within the substrate support. Furthermore, the auxiliary magnet can either be permanent magnets or electromagnets. A method of performing a deposition process is also included.

Abstract translation: 在本发明的一个方面，提供一种处理室。 处理室包括多个具有目标物体的溅射枪和固定在每个溅射枪的一端的主磁体。 衬底支撑件设置在距离多个溅射枪一定距离处。 辅助磁铁设置在基板附近。 辅助磁体围绕基板支撑件的外周表面。 在替代实施例中，磁体可以设置在设置在基板支撑件下方或上方的板或保持器中。 在另外的实施例中，辅助磁体可以嵌入衬底支撑件内。 此外，辅助磁体可以是永磁体或电磁体。 还包括执行沉积工艺的方法。

公开(公告)号：US20120136601A1

公开(公告)日：2012-05-31

申请号：US12957354

申请日：2010-11-30

Applicant: Charlene Chen ,  Tony P. Chiang ,  Chi-I Lang ,  Yun Wang

Inventor： Charlene Chen ,  Tony P. Chiang ,  Chi-I Lang ,  Yun Wang

IPC: G06F19/00 ,  H01L21/66

CPC classification number: H01L22/20 ,  G01N21/59 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/0262 ,  H01L22/12 ,  H01L29/1606

Abstract: A method and system includes a first substrate and a second substrate, each substrate comprising a predetermined baseline transmittance value at a predetermine wavelength of light, processing regions on the first substrate by combinatorially varying at least one of materials, process conditions, unit processes, and process sequences associated with the graphene production, performing a first characterization test on the processed regions on the first substrate to generate first results, processing regions on a second substrate in a combinatorial manner by varying at least one of materials, process conditions, unit processes, and process sequences associated with the graphene production based on the first results of the first characterization test, performing a second characterization test on the processed regions on the second substrate to generate second results, and determining whether at least one of the first substrate and the second substrate meet a predetermined quality threshold based on the second results.

Abstract translation: 一种方法和系统包括第一衬底和第二衬底，每个衬底在光的预定波长处包括预定的基线透射率值，第一衬底上的处理区域通过组合地改变材料，工艺条件，单元工艺中的至少一个和 与所述石墨烯生产相关联的工艺序列，对所述第一衬底上的所述经处理区域执行第一表征测试以产生第一结果，通过改变材料，工艺条件，单位过程中的至少一种以组合方式处理第二衬底上的区域， 以及基于第一表征测试的第一结果与石墨烯生产相关联的处理顺序，对第二衬底上的经处理区域执行第二表征测试以产生第二结果，以及确定第一衬底和第二衬底中的至少一个 基板满足预定的质量阈值 基于第二个结果。

公开(公告)号：US08143164B2

公开(公告)日：2012-03-27

申请号：US12368110

申请日：2009-02-09

Applicant: Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

Inventor： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/02068 ,  C23C18/1651 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76852 ,  H01L21/76874

Abstract: Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.

Abstract translation: 本发明的实施方案描述了处理半导体衬底的方法，其包括将锌化溶液施加到半导体衬底上以在含钛层上形成锌钝化层，所述锌化溶液包含锌盐FeCl 3和pH调节剂。

公开(公告)号：US07902064B1

公开(公告)日：2011-03-08

申请号：US12121661

申请日：2008-05-15

Applicant: Tony Chiang ,  Chi-I Lang ,  Zachary Fresco

Inventor： Tony Chiang ,  Chi-I Lang ,  Zachary Fresco

IPC: H01L21/4763

CPC classification number: H01L21/28562 ,  C23C16/0272 ,  C23C16/45525 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76876

Abstract: A layer to enhance nucleation of a substrate is described, including a method to form the layer, the method including obtaining a substrate comprising a patterned feature comprising a dielectric region and a conductive region, selectively forming a self-aligned monolayer (SAM) on the dielectric region of the substrate to enhance nucleation process of a first precursor, and depositing the first precursor on the substrate, the precursor to adsorb on the SAM.

Abstract translation: 描述了一种用于增强基底的成核的层，包括形成该层的方法，该方法包括获得包括具有电介质区域和导电区域的图案化特征的基底，在该基底上选择性地形成自对准单层（SAM） 电介质区域以增强第一前体的成核过程，以及将第一前体沉积在基底上，所述前体吸附在SAM上。

公开(公告)号：US07884036B1

公开(公告)日：2011-02-08

申请号：US11777152

申请日：2007-07-12

Applicant: Jinhong Tong ,  Anh Duong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Sandra Malhotra ,  Tony Chiang

Inventor： Jinhong Tong ,  Anh Duong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Sandra Malhotra ,  Tony Chiang

IPC: H01L21/00

CPC classification number: H01L21/3105 ,  H01L21/02063 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76849

Abstract: Methods for treating a substrate in preparation for a subsequent process are presented, the method including: receiving the substrate, the substrate comprising conductive regions and dielectric regions; and applying an oxidizing agent to the substrate in a manner so that the dielectric regions are oxidized to become increasingly hydrophilic to enable access to the conductive regions in the subsequent process, wherein the dielectric region is treated to a depth in the range of approximately 1 to 5 atomic layers. In some embodiments, methods further include processing the substrate, wherein processing the conductive regions are selectively enhanced. In some embodiments, the oxidizing agent includes atmospheric pressure plasma and UV radiation.

Abstract translation: 呈现用于处理衬底以用于后续工艺的方法，所述方法包括：接收衬底，所述衬底包括导电区域和电介质区域; 以及以使得电介质区域被氧化以变得越来越亲水的方式将氧化剂施加到衬底上，以便能够在随后的工艺中进入导电区域，其中将电介质区域处理到大约1至 5个原子层。 在一些实施例中，方法还包括处理衬底，其中选择性地增强对导电区域的处理。 在一些实施方案中，氧化剂包括大气压等离子体和UV辐射。

公开(公告)号：US07879710B2

公开(公告)日：2011-02-01

申请号：US11647882

申请日：2006-12-29

Applicant: Zachary Fresco ,  Chi-I Lang ,  Sandra G. Malhotra ,  Tony P. Chiang ,  Thomas R. Boussie ,  Nitin Kumar ,  Jinhong Tong ,  Anh Duong

Inventor： Zachary Fresco ,  Chi-I Lang ,  Sandra G. Malhotra ,  Tony P. Chiang ,  Thomas R. Boussie ,  Nitin Kumar ,  Jinhong Tong ,  Anh Duong

IPC: H01L21/44

CPC classification number: H01L21/288 ,  B82Y30/00 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/7685

Abstract: Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.

Abstract translation: 描述基板处理方法。 所述方法包括在基底上形成材料层。 所述方法包括选择分子屏蔽层（MML）的成分以消除作为衬底处理的结果的材料层中的变化的影响。 所述方法包括通过在材料层上选择性地沉积MML来使材料层的表面特性归一化。

公开(公告)号：US07745328B2

公开(公告)日：2010-06-29

申请号：US12255644

申请日：2008-10-21

Applicant: Kang Sub Yim ,  Melissa M. Tam ,  Dian Sugiarto ,  Chi-I Lang ,  Peter Wai-Man Lee ,  Li-Qun Xia

Inventor： Kang Sub Yim ,  Melissa M. Tam ,  Dian Sugiarto ,  Chi-I Lang ,  Peter Wai-Man Lee ,  Li-Qun Xia

IPC: H01L21/4763

CPC classification number: H01L21/76834 ,  C23C16/30 ,  C23C16/325 ,  C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832

Abstract: Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.

Abstract translation: 提供了用于沉积具有显着降低的电流泄漏的碳化硅层的方法。 碳化硅层可以是还包括阻挡层的阻挡层或阻挡层双层的一部分。 还提供了沉积氧掺杂的碳化硅阻挡层的方法。 可以通过使包含有机硅化合物，包含碳 - 碳双键或碳 - 碳三键的脂族烃和任选地在等离子体中的氦气的气体混合物反应来沉积碳化硅层。 或者，可以通过在等离子体中使包含氢或氩的气体混合物和有机硅化合物反应来沉积碳化硅层。

公开(公告)号：US20090232966A1

公开(公告)日：2009-09-17

申请号：US12405218

申请日：2009-03-16

Applicant: Nikhil D. Kalyankar ,  Zachary Fresco ,  Chi-I Lang

Inventor： Nikhil D. Kalyankar ,  Zachary Fresco ,  Chi-I Lang

IPC: B05D1/28 ,  B05C1/00

CPC classification number: C40B60/08 ,  B01J19/0046 ,  B01J2219/00317 ,  B01J2219/00364 ,  B01J2219/00376 ,  B01J2219/00382 ,  B01J2219/00427 ,  B01J2219/00527 ,  B01J2219/00585 ,  B01J2219/00596 ,  B01J2219/00605 ,  B01J2219/00659 ,  B01J2219/00702 ,  C40B50/18

Abstract: This disclosure provides methods, devices and systems for using a stamp to enhance selectivity between surface layers of a substrate, and to facilitate functionalizing selected layers. An array of flat stamps may be used to concurrently stamp multiple regions of a substrate to transfer one or more substances to the topmost layer or layers of the substrate. If desired, the affected regions of the substrate may be isolated from each other through the use of a reactor plate that, when clamped to the substrate's surface, forms reaction wells in the area of stamping. The stamp area can, if desired, be configured for stamping the substrate after the reactor plate has been fitted, with the individual stamps sized and arranged in a manner that permits stamping within each reaction well. If applied in a combinatorial process, a robotic process may be used to transfer multiple combinations of contact substances and processing chemicals to each reaction well to perform many concurrent processes upon a single substrate (e.g., a single coupon). The methods, devices and systems provided facilitate semiconductor design, optimization and qualification, and may be adapted to production manufacturing.

Abstract translation: 本公开提供了使用印模来增强基底的表面层之间的选择性并促进官能化所选择的层的方法，装置和系统。 可以使用平面阵列阵列来同时印刷衬底的多个区域以将一种或多种物质转移到衬底的最上层或多层。 如果需要，可以通过使用反应器板将基材的受影响区域彼此隔离，当将其夹在基材表面上时，在冲压区域中形成反应孔。 如果需要，邮票区域可以被配置用于在安装反应器板之后冲压衬底，各个邮票的大小和布置方式允许在每个反应井内冲压。 如果应用于组合过程中，机器人过程可用于将接触物质和加工化学品的多种组合转移到每个反应井，以在单个底物（例如，单一试样）上进行许多并行处理。 提供的方法，设备和系统有助于半导体设计，优化和鉴定，并可适用于生产制造。