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    Light source device having multiple LED chips of different thickness
    75.
    发明授权
    Light source device having multiple LED chips of different thickness 有权

    公开(公告)号：US09748209B2

    公开(公告)日：2017-08-29

    申请号：US14886110

    申请日：2015-10-19

    Applicant: Genesis Photonics Inc.

    Inventor： Cheng-Yen Chen ,  Yun-Li Li ,  Po-Jen Su

    IPC: H01L25/07 ,  H01L33/62 ,  H01L25/075 ,  H01L23/00 ,  H01L27/15

    CPC classification number: H01L25/0753 ,  H01L24/14 ,  H01L27/156 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2924/00

    Abstract: A light source device including a substrate, a plurality of first light emitting diode (LED) chips, and at least one second LED chip is provided. The substrate has an upper surface. The plurality of first LED chips are disposed on the upper surface and electrically connected to the substrate. Each of the first LED chips includes a first chip substrate, a first semiconductor layer, and a plurality of first electrodes, and the first electrodes are disposed on the upper surface of the substrate. The second LED chip is disposed on the upper surface and electrically connected to the substrate. The second LED chip includes a second chip substrate, a second semiconductor layer, and a plurality of second electrodes. A thickness of the second chip substrate is different from than a thickness of the first chip substrate, and the second electrodes are disposed on the upper surface of the substrate.

    Package method and package
    76.
    发明授权
    Package method and package 有权

    公开(公告)号：US09685596B2

    公开(公告)日：2017-06-20

    申请号：US14690480

    申请日：2015-04-20

    Applicant: Genesis Photonics Inc.

    Inventor： Chin-Hua Hung ,  Hao-Chung Lee ,  Yu-Feng Lin

    IPC: H01L33/50 ,  H01L33/52

    CPC classification number: H01L33/508 ,  H01L33/504 ,  H01L33/52 ,  H01L2933/0041 ,  H01L2933/005

    Abstract: A package method includes steps of providing a light emitting module, a mold and a molding compound, wherein the light emitting module includes a substrate and at least one light emitting unit disposed on the substrate, the mold has at least one recess, and a side wall of the recess is parallel to a side surface of the light emitting unit; filling the recess with the molding compound; placing the substrate on the mold reversely, so that the light emitting unit is immersed into the recess and the molding compound directly encapsulates the light emitting unit; and heating and pressing the substrate and the mold, so as to solidify the molding compound.

    Thin-film flip-chip light emitting diode having roughening surface and method for manufacturing the same
    77.
    发明授权
    Thin-film flip-chip light emitting diode having roughening surface and method for manufacturing the same 有权
    具有粗糙面的薄膜倒装芯片发光二极管及其制造方法

    公开(公告)号：US09564554B2

    公开(公告)日：2017-02-07

    申请号：US14877948

    申请日：2015-10-08

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Fan Li ,  Jing-En Huang ,  Sie-Jhan Wu

    IPC: H01L33/00 ,  H01L33/22 ,  H01L33/48 ,  H01L33/06

    CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/486 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0091

    Abstract: A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a patterned structure on a surface of the substrate is provided, and the surface is roughened. A first semiconductor layer is then formed on the surface; a light emitting structure layer is then formed on the first semiconductor layer; a second semiconductor layer is then formed on the light emitting structure layer. The first and second semiconductor layers possess opposite electrical characteristics. A first contact electrode and a second contact electrode are then formed on the first semiconductor layer and the second semiconductor layer, respectively. Finally, a sub-mount is formed on the first and second contact electrodes, and the substrate is removed to form the thin-film flip-chip LED having the roughened surface. Here, the light emitting efficiency of the thin-film flip-chip LED is improved.

    Abstract translation: 提供了具有粗糙表面的薄膜倒装芯片发光二极管（LED）及其制造方法。 首先，提供在基板的表面上具有图案化结构的基板，并使表面粗糙化。 然后在表面上形成第一半导体层; 然后在第一半导体层上形成发光结构层; 然后在发光结构层上形成第二半导体层。 第一和第二半导体层具有相反的电特性。 然后分别在第一半导体层和第二半导体层上形成第一接触电极和第二接触电极。 最后，在第一接触电极和第二接触电极上形成子座，并且移除衬底以形成具有粗糙表面的薄膜倒装芯片LED。 这里，提高了薄膜倒装芯片LED的发光效率。

    LIGHT-EMITTING DIODE CHIP
    79.
    发明申请
    LIGHT-EMITTING DIODE CHIP 审中-公开
    发光二极管芯片

    公开(公告)号：US20160315238A1

    公开(公告)日：2016-10-27

    申请号：US15135574

    申请日：2016-04-22

    Applicant: Genesis Photonics Inc.

    Inventor： Yu-Chen Kuo ,  Teng-Hsien Lai ,  Kai-Shun Kang ,  Yan-Ting Lan ,  Jing-En Huang ,  Cheng-Pin Chen ,  Wei-Chen Chien ,  Chih-Chin Cheng ,  Chih-Hung Tseng

    IPC: H01L33/62 ,  H01L33/36 ,  H01L33/44

    CPC classification number: H01L33/38 ,  H01L33/145

    Abstract: Provided is a light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer therebetween. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is on the second-type doped semiconductor layer. The current-blocking layer is between the current-spreading layer and the second-type doped semiconductor layer. The second electrode is on the current-spreading layer and electrically connected to the second-type doped semiconductor layer. The current-blocking layer has a first surface facing the semiconductor device layer, a second surface back on to the semiconductor device layer, and a first inclined surface. The first inclined surface is connected between the first surface and the second surface and tilted with respect to the first surface and the second surface.

    Abstract translation: 提供了包括半导体器件层，第一电极，电流阻挡层，电流扩展层和第二电极的发光二极管芯片。 半导体器件层包括第一类掺杂半导体层，第二类掺杂半导体层和它们之间的发光层。 第一电极电连接到第一掺杂半导体层。 电流阻挡层位于第二类掺杂半导体层上。 电流阻挡层在电流扩散层和第二类掺杂半导体层之间。 第二电极在电流扩展层上并电连接到第二类掺杂半导体层。 电流阻挡层具有面向半导体器件层的第一表面，反向到半导体器件层的第二表面和第一倾斜表面。 第一倾斜表面连接在第一表面和第二表面之间并相对于第一表面和第二表面倾斜。

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