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128 条记录 (耗时 0.024 秒)

    Disk apparatus using ferroelectric thin film
    71.
    发明授权
    Disk apparatus using ferroelectric thin film 失效
    使用铁电薄膜的磁盘设备

    公开(公告)号：US5946284A

    公开(公告)日：1999-08-31

    申请号：US905075

    申请日：1997-08-01

    申请人： Il-sub Chung ,  In-kyeong Yoo

    发明人： Il-sub Chung ,  In-kyeong Yoo

    IPC分类号： G11B7/24 ,  B81C99/00 ,  G11B9/00 ,  G11B9/02 ,  G11B9/14 ,  G11B11/08 ,  G11B13/06 ,  G11B7/00

    CPC分类号： B82Y10/00 ,  G11B9/02 ,  G11B9/14 ,  G11B9/1409 ,  G11B13/06

    摘要： In a disk apparatus using a ferroelectric thin film coated on the surface of a disk as a recording medium, an electrode layer is formed on a substrate and the ferroelectric thin film is formed on the electrode layer, thereby forming a disk. A head is installed on an arm over the disk. The head has a reflector, and a microtip electrode, for creating or erasing polarization of the ferroelectric thin film. An optical system is provided over the head. The head moves towards or away from the disk depending on recorded information (polarization direction), and the movement is read by the optical system. Therefore, a low-priced disk apparatus, capable of freely recording and reproducing information semipermanently, is realized.

    摘要翻译： 在将作为记录介质的盘表面上涂敷铁电薄膜的磁盘装置中，在基板上形成电极层，在电极层上形成强电介质薄膜，形成磁盘。 头部安装在磁盘上的手臂上。 头部具有用于产生或擦除铁电薄膜的极化的反射器和微尖端电极。 一个光学系统设置在头部上。 根据记录的信息（偏振方向），磁头朝向或远离盘移动，并且光学系统读取移动。 因此，实现了能够半自动地自动记录和再现信息的低价盘装置。

    Ferroelectric memory using leakage current and multi-numeration system ferroelectric memory
    72.
    发明授权
    Ferroelectric memory using leakage current and multi-numeration system ferroelectric memory 失效
    铁电存储器采用漏电流和多计数系统铁电存储器

    公开(公告)号：US5812442A

    公开(公告)日：1998-09-22

    申请号：US851891

    申请日：1997-05-06

    申请人： In-Kyeong Yoo

    发明人： In-Kyeong Yoo

    IPC分类号： G11C11/22 ,  G11C11/56 ,  H01L21/8247 ,  H01L27/10 ,  H01L29/788 ,  H01L29/792

    CPC分类号： G11C11/22 ,  G11C11/5657 ,  G11C11/223

    摘要： A non-volatile ferroelectric memory using a leakage current of a dielectric and a multi-numeration system ferroelectric memory are provided. Unit cells are formed of a transistor. A dielectric or a ferroelectric is used as a gate insulating material. A ferroelectric capacitor is deposited on the upper portion of the gate insulating material and the upper electrode of a ferroelectric capacitor is used as a gate. "Writing" is performed by selecting a material in which the leakage current of the ferroelectric has a negligible value and the leakage current of the dielectric (used as the gate insulating material) is sharply increased. Charges induced between the drain and the source, are increased by applying the voltages which have various levels and identical pulse widths (in the case of "deleting" voltages, having identical levels and various pulse widths) making the leakage current of a various current densities flow through the gate insulating material. Thus, the multi-numeration system information can be stored.

    摘要翻译： 提供了使用电介质的漏电流和多计算系统铁电存储器的非挥发性铁电存储器。 单元电池由晶体管形成。 电介质或铁电体用作栅绝缘材料。 铁电电容器沉积在栅绝缘材料的上部，铁电电容器的上电极用作栅极。 通过选择其中铁电体的漏电流具有可忽略的值并且电介质的漏电流（用作栅极绝缘材料）的材料急剧增加来进行“写入”。 通过施加具有各种等级和相同脉冲宽度的电压（在“删除”具有相同电平和各种脉冲宽度的电压的情况下），增加漏极和源极之间的电荷，使得各种电流密度的漏电流 流过栅极绝缘材料。 因此，可以存储多计数系统信息。

    Resistive memory devices including vertical transistor arrays and related fabrication methods
    74.
    发明授权
    Resistive memory devices including vertical transistor arrays and related fabrication methods 有权
    包括垂直晶体管阵列和相关制造方法的电阻式存储器件

    公开(公告)号：US08471232B2

    公开(公告)日：2013-06-25

    申请号：US12724498

    申请日：2010-03-16

    申请人： Deok-kee Kim ,  In Kyeong Yoo ,  Kyoung-won Na ,  Kwnag-Soo Seol ,  Dong-Seok Suh

    发明人： Deok-kee Kim ,  In Kyeong Yoo ,  Kyoung-won Na ,  Kwnag-Soo Seol ,  Dong-Seok Suh

    IPC分类号： H01L47/00

    CPC分类号： H01L29/7827 ,  G11C2213/79 ,  H01L27/2454 ,  H01L27/2463 ,  H01L29/66666 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1683

    摘要： A resistive memory device includes a vertical transistor and a variable resistance layer. The vertical transistor includes a gate electrode on a surface of a substrate, a gate insulation layer extending along a sidewall of the gate electrode, and a single crystalline silicon layer on the surface of the substrate adjacent to the gate insulation layer. At least a portion of the single crystalline silicon layer defines a channel region that extends in a direction substantially perpendicular to the surface of the substrate. The variable resistance layer is provided on the single crystalline silicon layer. The variable resistance layer is electrically insulated from the gate electrode. Related devices and fabrication methods are also discussed.

    摘要翻译： 电阻式存储器件包括垂直晶体管和可变电阻层。 垂直晶体管包括在基板的表面上的栅极电极，沿着栅电极的侧壁延伸的栅极绝缘层，以及与栅极绝缘层相邻的基板的表面上的单晶硅层。 单晶硅层的至少一部分限定了在基本上垂直于衬底的表面的方向上延伸的沟道区。 可变电阻层设置在单晶硅层上。 可变电阻层与栅电极电绝缘。 还讨论了相关设备和制造方法。

    PHOTONIC CRYSTAL COLOR PRINTING PAPER AND METHODS OF PRINTING AND FABRICATING THE SAME
    76.
    发明申请
    PHOTONIC CRYSTAL COLOR PRINTING PAPER AND METHODS OF PRINTING AND FABRICATING THE SAME 审中-公开
    光电晶体彩色打印纸及其印刷和制作方法

    公开(公告)号：US20120249718A1

    公开(公告)日：2012-10-04

    申请号：US13439147

    申请日：2012-04-04

    申请人： Jin-seung Sohn ,  Sang-hun Lee ,  In-kyeong Yoo ,  Eun-hyoung Cho

    发明人： Jin-seung Sohn ,  Sang-hun Lee ,  In-kyeong Yoo ,  Eun-hyoung Cho

    IPC分类号： B41J2/435 ,  B05D5/06 ,  G02B1/10 ,  G02B5/09 ,  G02B27/14

    CPC分类号： G02B1/005 ,  G02B5/1809 ,  G02B5/1861 ,  G02B27/102 ,  G02B27/1086

    摘要： A color printing paper includes a substrate having a printing region and a plurality of photonic crystal patterns formed on the printing region. The plurality of photonic crystal layer patterns have different respective optical reflection characteristics. The printing method includes selecting pixels including a plurality of photonic crystal layer patterns that express at least one of a red color, a green color, and a blue color, and changing optical reflection characteristics of at least a portion of the plurality of photonic crystal layer patterns of the selected pixels.

    摘要翻译： 彩色打印纸包括具有打印区域和形成在打印区域上的多个光子晶体图案的基板。 多个光子晶体层图案具有不同的相应的光学反射特性。 打印方法包括选择包括表示红色，绿色和蓝色中的至少一种的多个光子晶体层图案的像素，以及改变多个光子晶体层的至少一部分的光学反射特性 所选像素的图案。

    RESISTIVE MEMORY DEVICES INCLUDING VERTICAL TRANSISTOR ARRAYS AND RELATED FABRICATION METHODS
    79.
    发明申请
    RESISTIVE MEMORY DEVICES INCLUDING VERTICAL TRANSISTOR ARRAYS AND RELATED FABRICATION METHODS 有权
    包括垂直晶体管阵列的电阻存储器件及相关制造方法

    公开(公告)号：US20110068409A1

    公开(公告)日：2011-03-24

    申请号：US12724498

    申请日：2010-03-16

    申请人： Deok-kee Kim ,  In Kyeong Yoo ,  Kyoung-won Na ,  Kwnag-Soo Seol ,  Dong-Seok Suh

    发明人： Deok-kee Kim ,  In Kyeong Yoo ,  Kyoung-won Na ,  Kwnag-Soo Seol ,  Dong-Seok Suh

    IPC分类号： H01L27/105

    CPC分类号： H01L29/7827 ,  G11C2213/79 ,  H01L27/2454 ,  H01L27/2463 ,  H01L29/66666 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1683

    摘要： A resistive memory device includes a vertical transistor and a variable resistance layer. The vertical transistor includes a gate electrode on a surface of a substrate, a gate insulation layer extending along a sidewall of the gate electrode, and a single crystalline silicon layer on the surface of the substrate adjacent to the gate insulation layer. At least a portion of the single crystalline silicon layer defines a channel region that extends in a direction substantially perpendicular to the surface of the substrate. The variable resistance layer is provided on the single crystalline silicon layer. The variable resistance layer is electrically insulated from the gate electrode. Related devices and fabrication methods are also discussed.

    摘要翻译： 电阻式存储器件包括垂直晶体管和可变电阻层。 垂直晶体管包括在基板的表面上的栅极电极，沿着栅电极的侧壁延伸的栅极绝缘层，以及与栅极绝缘层相邻的基板的表面上的单晶硅层。 单晶硅层的至少一部分限定了在基本上垂直于衬底的表面的方向上延伸的沟道区。 可变电阻层设置在单晶硅层上。 可变电阻层与栅电极电绝缘。 还讨论了相关设备和制造方法。

    Magnetic domain data storage devices and methods of operating the same
    80.
    发明授权
    Magnetic domain data storage devices and methods of operating the same 有权
    磁畴数据存储设备及其操作方法

    公开(公告)号：US07835167B2

    公开(公告)日：2010-11-16

    申请号：US11980418

    申请日：2007-10-31

    申请人： Chee-kheng Lim ,  In-kyeong Yoo ,  Sung-hoon Choa

    发明人： Chee-kheng Lim ,  In-kyeong Yoo ,  Sung-hoon Choa

    IPC分类号： G11C19/00 ,  G11C11/00 ,  G11C11/14 ,  G11C11/15

    CPC分类号： G11C11/14 ,  G11C19/0808 ,  G11C19/0841 ,  G11C21/00 ,  Y10T428/11

    摘要： Example embodiments may provide data storage devices using movement of a magnetic domain wall and/or a method of operating magnetic domain data storage devices. The data storage device may include a first magnetic layer for writing data having two magnetic domains magnetized in different directions, a second magnetic layer for storing data at a side of the first magnetic layer, a data recording device connected to the first magnetic layer and the second magnetic layer, and a plurality of reading heads configured to read the second magnetic layer. The data storage device may store a larger amount of data without requiring moving mechanical systems.

    摘要翻译： 示例性实施例可以使用磁畴壁的移动和/或操作磁畴数据存储设备的方法来提供数据存储设备。 数据存储装置可以包括用于写入具有不同方向磁化的两个磁畴的数据的第一磁性层，用于在第一磁性层的一侧存储数据的第二磁性层，连接到第一磁性层的数据记录装置和 第二磁性层和被配置为读取第二磁性层的多个读取头。 数据存储设备可以存储更大量的数据，而不需要移动机械系统。