Fabrication of a metalized blind via
    72.
    发明授权
    Fabrication of a metalized blind via 失效
    金属化盲孔的制造

    公开(公告)号:US06576549B2

    公开(公告)日:2003-06-10

    申请号:US10282275

    申请日:2002-10-28

    IPC分类号: H01L2131

    摘要: A method and structure for forming a metalized blind via. A dielectric layer is formed on a metallic layer, followed by laser drilling a depression in the dielectric layer such that a carbon film that includes the carbon is formed on a sidewall of the depression. If the laser drilling does not expose the metallic layer, then an anisotropic plasma etching, such as a reactive ion etching (RIE), may be used to clean and expose a surface of the metallic layer. The dielectric layer includes a dielectric material having a carbon based polymeric material, such as a permanent photoresist, a polyimide, and advanced solder mask (ASM). The metallic layer includes a metallic material, such as copper, aluminum, and gold. The carbon film is in conductive contact with the metallic layer, and the carbon film is sufficiently conductive to permit electroplating a continuous layer of metal (e.g., copper) directly on the carbon film without need of an electrolessly plated layer underneath the electroplated layer. The laser drilling is accomplished using a laser radiation having a wavelength between about 180 nanometers and about 600 nanometers. The depression may have any cross-sectional shape and any spatial distribution of depths. As an example, the depression may include a blind via, a rectangular channel, or a combination thereof.

    摘要翻译: 用于形成金属化盲孔的方法和结构。 在金属层上形成电介质层,随后在电介质层中激光钻出凹陷,使得在凹陷的侧壁上形成包含碳的碳膜。 如果激光钻孔不暴露金属层,则可以使用诸如反应离子蚀刻(RIE)的各向异性等离子体蚀刻来清洁和暴露金属层的表面。 电介质层包括具有碳基聚合物材料的电介质材料,例如永久性光致抗蚀剂,聚酰亚胺和高级阻焊剂(ASM)。 金属层包括金属材料,例如铜,铝和金。 碳膜与金属层导电接触,并且碳膜具有足够的导电性,以允许直接在碳膜上电镀连续的金属层(例如铜),而不需要在电镀层下面的无电镀层。 激光钻孔使用波长在约180纳米和约600纳米之间的激光辐射完成。 凹陷可以具有任何横截面形状和深度的任何空间分布。 作为示例,凹陷可以包括盲孔,矩形通道或其组合。

    Method for bonding heat sinks to overmolds and device formed thereby
    74.
    发明授权
    Method for bonding heat sinks to overmolds and device formed thereby 失效
    用于将散热器连接到包覆成型体的方法和由此形成的装置

    公开(公告)号:US06206997B1

    公开(公告)日:2001-03-27

    申请号:US09248341

    申请日:1999-02-11

    IPC分类号: B32B3112

    摘要: A method for bonding heat sinks to packaged electronic components comprises the steps of: (a) exposing to a plasma a surface of a molded polymer formed on a substrate; (b) allowing the plasma to at least partially convert silicon-containing residue on the surface to silica; and (c) bonding an article to the surface by applying an adherent material between the article and the surface. Often, the silicon-containing residue is silicone oil, a mold release compound, which may prevent the formation of a bond when using conventional bonding methods and materials. The silica layer formed on the surface of the molded polymer assists in formation of a proper bond. The plasma may be an oxygen plasma and the adherent material may be selected from either a heat cured silicone-based paste adhesive with a metal oxide filler or a heat cured porous polymer film impregnated with adhesive. In particular, the film may be polytetrafluoroethylene, the adhesive may be polybutadine, and the film may be further impregnated with a metal oxide heat transfer medium, such as zinc oxide. An alternate method comprises applying the porous polymer film without plasma treatment and heat curing the film to form a proper bond.

    摘要翻译: 一种用于将散热器粘合到封装的电子部件的方法包括以下步骤:(a)将形成在基底上的模制聚合物的表面暴露于等离子体; (b)允许等离子体至少部分地将表面上的含硅残余物转化为二氧化硅; 和(c)通过在制品和表面之间施加粘附材料将制品粘合到表面上。 通常,含硅残渣是使用常规粘合方法和材料的硅油,脱模剂,可以防止形成粘结。 形成在模塑聚合物表面上的二氧化硅层有助于形成适当的键。 等离子体可以是氧等离子体,并且粘附材料可以选自具有金属氧化物填料的热固化硅氧烷基糊状粘合剂或浸渍有粘合剂的热固化多孔聚合物膜。 特别地,膜可以是聚四氟乙烯,粘合剂可以是聚丁二烯,并且该膜可以进一步用金属氧化物传热介质如氧化锌浸渍。 替代方法包括在不进行等离子体处理的情况下应用多孔聚合物膜并热固化膜以形成适当的键。

    Method of forming adherent metal components on a polyimide substrate
    75.
    发明授权
    Method of forming adherent metal components on a polyimide substrate 失效
    在聚酰亚胺基板上形成粘附金属成分的方法

    公开(公告)号:US06194076B1

    公开(公告)日:2001-02-27

    申请号:US08837859

    申请日:1997-04-22

    IPC分类号: B32B1508

    摘要: A method for attaching adherent metal components, particularly a copper film, on at least one surface of a polyimide substrate is provided. The method comprises the steps of: exposing at least one surface of the polyimide substrate to a reactive gas plasma that provides a level of ion bombardment of the polyimide surface sufficient to disrupt at least a portion of the imide groups on the surface and to form reactive carboxylate groups, carbonyl groups and other carbon-oxygen functional groups on the surface; and then depositing a metal film onto the chemically-modified surface without intervening exposure to air. The present invention also provides a copper-coated polyimide product comprising a polyimide substrate having a substantially smooth and chemically-modified surface and a copper film directly attached to the surface, i.e., the product is free of a polymeric adhesive layer or tie coat between the surface of the polyimide substrate and the copper film.

    摘要翻译: 提供了在聚酰亚胺基板的至少一个表面上附着粘附金属成分,特别是铜膜的方法。 该方法包括以下步骤:将聚酰亚胺基底的至少一个表面暴露于反应性气体等离子体,其提供聚酰亚胺表面的离子轰击水平足以破坏表面上的至少一部分酰亚胺基团并形成反应性 羧基,羰基和其他碳氧官能团; 然后将金属膜沉积在化学改性的表面上,而不会暴露于空气中。 本发明还提供了一种铜包覆的聚酰亚胺产品,其包括具有基本上光滑和化学改性的表面的聚酰亚胺基底和直接附着在该表面上的铜膜,即,该产品不含聚合物粘合剂层 聚酰亚胺基板的表面和铜膜。

    Materials and methods for plasma etching of aluminum and aluminum alloys
    77.
    发明授权
    Materials and methods for plasma etching of aluminum and aluminum alloys 失效
    铝和铝合金等离子体蚀刻的材料和方法

    公开(公告)号:US4412885A

    公开(公告)日:1983-11-01

    申请号:US438786

    申请日:1982-11-03

    CPC分类号: H01L21/32136 C23F4/00

    摘要: A method for etching a layer of aluminum or aluminum alloy on a semiconductor wafer using the steps:disposing the wafer on one of a pair of electrode structures in a closed chamber;communicating into the chamber a reactive gas mixture comprising a principal gas mixture of BCl.sub.3 and Cl.sub.2 and a dopant gas of oxygen and fluorocarbon gas; andsupplying radio frequency electrical energy to one of the electrode structures to create a plasma of the reactive gas mixture for etching the aluminum layer.

    摘要翻译: 一种用于在半导体晶片上蚀刻铝或铝合金层的方法,该方法使用以下步骤:将晶片设置在封闭室中的一对电极结构中的一个上; 将包含BCl 3和Cl 2的主要气体混合物和氧气和碳氟化合物气体的掺杂气体的反应性气体混合物连通到所述室中; 并向一个电极结构提供射频电能以产生用于蚀刻铝层的反应气体混合物的等离子体。

    Method of forming an electrically conductive printed line
    80.
    发明授权
    Method of forming an electrically conductive printed line 有权
    形成导电印刷线的方法

    公开(公告)号:US08499445B1

    公开(公告)日:2013-08-06

    申请号:US13184699

    申请日:2011-07-18

    IPC分类号: H05K3/40

    摘要: Printed conductive lines and a method of preparing them using polymer nanocomposites with low resistivity and high current carrying capacity. Plasma treatment selectively removes polymers/organics from nanocomposites. Subsequent selective metal is deposited on top of the exposed metal surface of the printed conductive lines in order to improve current carrying capacity of the conductive printed lines. The printed conductive lines use a conductive ink or printing process and are then cured thermally and/or by a lamination process. Next, the printed conductive lines are treated with the plasma for 5-15 minutes in order to remove organics. E-less copper (Cu) is selectively deposited only at the conducting particle surface of the printed conductive lines. If desired, e-less gold, silver, tin, or tin-lead can be deposited on top of the e-less Cu.

    摘要翻译: 印刷导电线及其使用具有低电阻率和高载流能力的聚合物纳米复合材料制备它们的方法。 等离子体处理选择性地从纳米复合材料中除去聚合物/有机物。 随后的选择性金属沉积在印刷导线的暴露的金属表面的顶部上,以便改善导电印刷线的载流能力。 印刷的导线使用导电油墨或印刷工艺,然后热固化和/或通过层压工艺固化。 接下来,印刷的导线用等离子体处理5-15分钟以除去有机物。 仅在印刷导线的导电粒子表面选择性地沉积无电铜(Cu)。 如果需要,可以在无电镀铜的顶部上沉积无电镀金,银,锡或锡铅。