公开(公告)号：US20050161688A1

公开(公告)日：2005-07-28

申请号：US11086165

申请日：2005-03-22

申请人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

发明人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

IPC分类号： C30B25/02 ,  H01L21/205 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L29/22

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007

摘要： Disclosed herein is a process for production of a nitride semiconductor device having good characteristic properties (such as light-emitting performance). The process does not thermally deteriorate the active layer while nitride semiconductor layers are being grown on the active layer. The process consists of forming an active layer on a substrate by vapor phase growth at a first growth temperature, and subsequently forming thereon one or more nitride semiconductor layers at a temperature which is lower than said first growth temperature plus 250° C. The process yields a nitride semiconductor device in which the active layer retains its good crystal properties, without nitrogen voids and metallic indium occurring therein due to breakage of In—N bonds.

摘要翻译： 本文公开了一种具有良好特性（如发光性能）的氮化物半导体器件的制造方法。 该工艺不会在活性层上生长氮化物半导体层而使活性层热劣化。 该方法包括在第一生长温度下通过气相生长在基底上形成活性层，随后在低于第一生长温度加上250℃的温度下形成一个或多个氮化物半导体层。该方法产生 氮化物半导体器件，其中活性层保持其良好的晶体性质，由于In-N键的断裂，其中不存在氮空隙和金属铟。

公开(公告)号：US06858081B2

公开(公告)日：2005-02-22

申请号：US10345684

申请日：2003-01-16

申请人： Goshi Biwa ,  Hiroyuki Okuyama

发明人： Goshi Biwa ,  Hiroyuki Okuyama

IPC分类号： C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  C30B25/04 ,  C30B25/16

CPC分类号： H01L33/24 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02587 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639

摘要： In a selective growth method, growth interruption is performed at the time of selective growth of a crystal layer on a substrate. Even if the thickness distribution of the crystal layer becomes non-uniform at the time of growth of the crystal layer, the non-uniformity of the thickness distribution of the crystal layer can be corrected by inserting the growth interruption. As a result of growth interruption, an etching rate at a thick portion becomes higher than that at a thin portion, to eliminate the difference in thickness between the thick portion and the thin portion, thereby solving the problem associated with degradation of characteristics due to a variation in thickness of the crystal layer, for example, an active layer. The selective growth method is applied to fabrication of a semiconductor light emitting device including an active layer as a crystal layer formed on a crystal layer having a three-dimensional shape by selective growth.

摘要翻译： 在选择性生长方法中，在衬底上的晶体层的选择性生长时进行生长中断。 即使在晶体层生长时晶体层的厚度分布变得不均匀，也可以通过插入生长中断来校正晶体层的厚度分布的不均匀性。 作为生长中断的结果，厚部分的蚀刻速率变得比薄部分的蚀刻速率高，以消除厚部分和薄部分之间的厚度差，从而解决与由于 晶体层的厚度变化，例如活性层。 选择生长方法用于制造半导体发光器件，该半导体发光器件包括通过选择性生长形成在具有三维形状的晶体层上的作为晶体层的有源层。

公开(公告)号：US06818463B2

公开(公告)日：2004-11-16

申请号：US10126240

申请日：2002-04-18

申请人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

发明人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

IPC分类号： H01L2120

CPC分类号： C30B29/40 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20 ,  H01L33/32

摘要： Nitride semiconductor devices and methods of producing same are provided. The present invention includes forming a nitride semiconductor layer on a base body of the nitride semiconductor under selective and controlled crystal growth conditions. For example, the crystal growth rate, the supply of crystal growth source material and/or the crystal growth area can be varied over time, thus resulting in a nitride semiconductor device with enhanced properties.

公开(公告)号：US06206962B1

公开(公告)日：2001-03-27

申请号：US09178749

申请日：1998-10-27

申请人： Satoru Kijima ,  Hiroyuki Okuyama

发明人： Satoru Kijima ,  Hiroyuki Okuyama

IPC分类号： C30B2300

CPC分类号： H01L33/28 ,  H01L21/02395 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/02485 ,  H01L21/02507 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631

摘要： An n-type cladding layer, the first guiding layer, an active layer, the second guiding layer, a p-type cladding layer, a backing layer, a contact layer, a superlattice layer and a cap layer are stacked in this order on an n-type substrate. The cap layer comprises p-type ZnTe and has a thickness of less than 10 nm. The contact layer is comprised of p-type ZnSe and the concentration of nitrogen added to the contact layer is in the range of 1 to 2×1018 cm−3. The backing layer comprises p-type ZnSSe mixed crystal and the concentration of nitrogen added to the backing layer is higher than that of the contact layer, in the range of 1 to 3×1018 cm−3. Before the corresponding Group II-VI compound semiconductor layers are grown by the MBE method, the temperature of cells is once increased. The operating voltage of the semiconductor light emitting device can be lowered by increasing the carrier concentrations of the Group II-VI compound semiconductor layers between the p-side electrode and the p-type cladding layer.

摘要翻译： 将n型包覆层，第一引导层，有源层，第二引导层，p型覆层，背衬层，接触层，超晶格层和覆盖层依次堆叠在 n型衬底。 盖层包括p型ZnTe，其厚度小于10nm。 接触层由p型ZnSe组成，并且加入到接触层中的氮浓度在1至2×10 18 cm -3的范围内。 背衬层包括p型ZnSSe混合晶体，添加到背衬层中的氮浓度高于接触层的浓度，范围为1至3×10 18 cm -3。 在通过MBE法生长相应的II-VI族化合物半导体层之前，电池的温度一度增加。 通过增加p侧电极和p型覆层之间的II-VI族化合物半导体层的载流子浓度，能够降低半导体发光元件的工作电压。

公开(公告)号：US20130064595A1

公开(公告)日：2013-03-14

申请号：US13698200

申请日：2011-06-14

申请人： Toshimi Kamitani ,  Hiroyuki Okuyama ,  Mitsuhiro Kawabata ,  Tadashi Kouriki

发明人： Toshimi Kamitani ,  Hiroyuki Okuyama ,  Mitsuhiro Kawabata ,  Tadashi Kouriki

IPC分类号： B43K8/06

CPC分类号： B43K1/006 ,  B43K8/003 ,  B43K8/02 ,  B43K8/03 ,  B43K8/04 ,  B43K23/12

摘要： In order to provide a writing instrument in which a writing direction can be visually recognized in a broad range at a visual part of a pen tip and which can surely write to end of writing, the writing instrument is endowed with a constitution in which a pen tip is equipped with a porous member as a writing part and a holding member holding the above porous member and having at least one ink guiding part through which an ink contained in a barrel is provided to a writing part held by the holding member which is a visible part enabling to visually recognize a writing direction, wherein an area ratio of the visible part is 40% or more of the pen tip protruding from a tip part of the writing instrument.

摘要翻译： 为了提供一种书写工具，其中书写方向可以在笔尖的视觉部分的宽范围内被视觉识别，并且可以肯定写入书写结束，书写工具被赋予其中笔 顶部配备有作为书写部分的多孔构件和保持上述多孔构件并具有至少一个墨水引导部分的保持构件，墨水引导部件将容纳在墨镜筒中的墨水通过该墨水引导部件设置到由保持构件保持的书写部件 可视部分能够可视地识别书写方向，其中可见部分的面积比是从书写工具的尖端突出的笔尖的40％或更多。

公开(公告)号：US20120169786A1

公开(公告)日：2012-07-05

申请号：US13332635

申请日：2011-12-21

申请人： Hiroyuki Okuyama ,  Katsuhiro Tomoda ,  Naoki Hirao

发明人： Hiroyuki Okuyama ,  Katsuhiro Tomoda ,  Naoki Hirao

IPC分类号： G09G5/10 ,  F21V21/00

CPC分类号： H01L25/0753 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00

摘要： A light emitting device includes: one or plural light emitting elements having plural electrodes; a chip-like insulator surrounding the one or plural light emitting elements from a side surface side of the one or plural light emitting elements; and plural terminal electrodes electrically connected one-to-one with the plural electrodes, and having protrusions each protruding from a peripheral edge of the chip-like insulator.

摘要翻译： 发光器件包括：一个或多个具有多个电极的发光元件; 围绕所述一个或多个发光元件的所述一个或多个发光元件的侧表面侧的芯片状绝缘体; 以及与多个电极一一对应地电连接的多个端子电极，并且具有从芯片状绝缘体的周缘突出的突起。

公开(公告)号：US20110199623A1

公开(公告)日：2011-08-18

申请号：US13021059

申请日：2011-02-04

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： G06F15/00

CPC分类号： H04N1/00408 ,  G03G15/502 ,  H04N1/00411 ,  H04N1/00427 ,  H04N1/00432 ,  H04N1/00477 ,  H04N1/00482 ,  H04N1/00514 ,  H04N1/00517 ,  H04N2201/0094 ,  H04N2201/3202 ,  H04N2201/3214 ,  H04N2201/3219 ,  H04N2201/3222 ,  H04N2201/3276

摘要： According to one embodiment, an image processing apparatus has a storage unit, a display unit, a display control unit, a setting log saving unit, a determination unit, and an updating unit. The storage unit stores default settings. The display unit displays setting contents reflecting the default settings. The display control unit causes the setting contents which are changed in response to an instruction from a user to be displayed on the display unit. The setting log saving unit saves the setting contents of the executed process as setting log information. The determination unit determines whether or not the default settings are to be changed using a plurality of the setting log information. The updating unit, if it is determined that the default settings are to be changed, updates the default settings to default settings determined from the plurality of the setting log information.

摘要翻译： 根据一个实施例，图像处理装置具有存储单元，显示单元，显示控制单元，设置日志保存单元，确定单元和更新单元。 存储单元存储默认设置。 显示单元显示反映默认设置的设置内容。 显示控制单元使得响应于来自用户的指示而改变的设置内容被显示在显示单元上。 设置日志保存单元将所执行的处理的设置内容保存为设置日志信息。 确定单元使用多个设置日志信息来确定是否要改变默认设置。 更新单元，如果确定要改变默认设置，则将默认设置更新为从多个设置日志信息确定的默认设置。

公开(公告)号：US07928452B2

公开(公告)日：2011-04-19

申请号：US12402160

申请日：2009-03-11

申请人： Hiroki Naito ,  Hiroyuki Okuyama ,  Goshi Biwa ,  Ippei Nishinaka

发明人： Hiroki Naito ,  Hiroyuki Okuyama ,  Goshi Biwa ,  Ippei Nishinaka

IPC分类号： H01L33/00

CPC分类号： H01L33/025 ,  H01L33/04 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of p-conductivity type, a first electrode electrically connected to the first GaN-based compound semiconductor layer, a second electrode electrically connected to the second GaN-based compound semiconductor layer, an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer, and a laminated structure or a third GaN-based compound semiconductor layer of p-conductivity type. The impurity diffusion-preventing layer and the laminated structure or the third GaN-based compound semiconductor layer of p-conductivity type are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side.

摘要翻译： GaN基半导体发光元件包括n导电型的第一GaN基化合物半导体层，有源层，p导电型的第二GaN基化合物半导体层，与第一GaN导电型电连接的第一电极 GaN基化合物半导体层，与第二GaN基化合物半导体层电连接的第二电极，由未掺杂的GaN基化合物半导体构成的杂质扩散防止层，防止p型杂质的杂质扩散防止层 从扩散到有源层，以及p型导电型的层叠结构或第三GaN基化合物半导体层。 在有源层和第二GaN基化合物半导体层之间，依次从有源层侧配置p型导电型杂质扩散防止层和层叠结构或第三GaN类化合物半导体层。

公开(公告)号：US20110062457A1

公开(公告)日：2011-03-17

申请号：US12877534

申请日：2010-09-08

申请人： Hiroki Naito ,  Takahiro Koyama ,  Kensuke Kojima ,  Arata Kobayashi ,  Hiroyuki Okuyama ,  Makoto Oogane ,  Takayuki Kawasumi

发明人： Hiroki Naito ,  Takahiro Koyama ,  Kensuke Kojima ,  Arata Kobayashi ,  Hiroyuki Okuyama ,  Makoto Oogane ,  Takayuki Kawasumi

IPC分类号： H01L33/08 ,  H01L33/30 ,  H01L21/04

CPC分类号： H01L33/30 ,  H01L27/156 ,  H01L33/0062 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode.

摘要翻译： 一种半导体发光器件，包括有源层，有源层上的化合物半导体层，化合物半导体层上的接触层以及接触层上的电极，其中接触层与电极大致相同。

公开(公告)号：US20090230878A1

公开(公告)日：2009-09-17

申请号：US12402160

申请日：2009-03-11

申请人： Hiroki Naito ,  Hiroyuki Okuyama ,  Goshi Biwa ,  Ippei Nishinaka

发明人： Hiroki Naito ,  Hiroyuki Okuyama ,  Goshi Biwa ,  Ippei Nishinaka

IPC分类号： H05B41/36 ,  H01L33/00 ,  H01L21/28

CPC分类号： H01L33/025 ,  H01L33/04 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of p-conductivity type, a first electrode electrically connected to the first GaN-based compound semiconductor layer, a second electrode electrically connected to the second GaN-based compound semiconductor layer, an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer, and a laminated structure or a third GaN-based compound semiconductor layer of p-conductivity type. The impurity diffusion-preventing layer and the laminated structure or the third GaN-based compound semiconductor layer of p-conductivity type are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side.

摘要翻译： GaN基半导体发光元件包括n导电型的第一GaN基化合物半导体层，有源层，p导电型的第二GaN基化合物半导体层，与第一GaN导电型电连接的第一电极 GaN基化合物半导体层，与第二GaN基化合物半导体层电连接的第二电极，由未掺杂的GaN基化合物半导体构成的杂质扩散防止层，防止p型杂质的杂质扩散防止层 从扩散到有源层，以及p型导电型的层叠结构或第三GaN基化合物半导体层。 在有源层和第二GaN基化合物半导体层之间，依次从有源层侧配置p型导电型杂质扩散防止层和层叠结构或第三GaN类化合物半导体层。