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178 条记录 (耗时 0.03 秒)

    Communication system
    75.
    发明授权
    Communication system 失效
    通讯系统

    公开(公告)号：US6049534A

    公开(公告)日：2000-04-11

    申请号：US970159

    申请日：1997-11-13

    申请人： Kenichi Sakamoto ,  Tsutomu Kusaki ,  Masaru Murakami ,  Takashi Yokoyama

    发明人： Kenichi Sakamoto ,  Tsutomu Kusaki ,  Masaru Murakami ,  Takashi Yokoyama

    IPC分类号： H04L1/06 ,  H04B7/02 ,  H04L12/70 ,  H04W36/00 ,  H04W36/18 ,  H04W36/36 ,  H04Q7/00

    CPC分类号： H04B7/022 ,  H04W36/18

    摘要： A communication system includes a control unit, a switch and a diversity hand-over processing unit connected to the control unit and the switch for receiving, both a first communication signal received from a radio base station which outputs the hand-over instruction, and a second communication signal which receives it from another radio base station to which the communication signal will be hand-over to output one of the first and second communication signals to the associated interface circuit, and for transmitting the communication signal received through the radio base station from the mobile station on the reception side for communication to both the interface circuit associated with the radio base station as a source of hand-over and the interface circuit associated with the radio base station as a destination of hand-over. Thus, during the hand-over, the diversity hand-over processing unit transmits the communication signal from the mobile station on the reception side for communication to both the radio base station as a source of hand-over and the radio base station as a destination of hand-over so that the communication is established between the mobile station on the transmission side for communication and the mobile station as a destination of hand-over and on the reception side for communication.

    摘要翻译： 一种通信系统，包括控制单元，开关和分配移交处理单元，连接到控制单元和开关，用于接收从输出切换指令的无线电基站接收的第一通信信号和 第二通信信号，其从另一个无线电基站接收通信信号将被切换到的第二和第二通信信号，以将第一和第二通信信号中的一个输出到相关联的接口电路，并且将通过无线电基站接收的通信信号从 接收侧的移动台用于与无线基站相关联的接口电路作为切换源，以及与无线基站相关联的接口电路作为切换目的地进行通信。 因此，在切换过程中，分集处理单元将来自接收侧的移动台的通信信号作为切换的来源发送到作为切换的来源的无线基站和作为目的地的无线基站 使得在用于通信的发送侧的移动台和作为切换的目的地的移动台之间以及在用于通信的接收侧上建立通信。

    High electron mobility transistor
    76.
    发明授权
    High electron mobility transistor 失效
    高电子迁移率晶体管

    公开(公告)号：US6049091A

    公开(公告)日：2000-04-11

    申请号：US885744

    申请日：1997-06-30

    申请人： Takashi Yokoyama

    发明人： Takashi Yokoyama

    IPC分类号： H01L29/78 ,  H01L21/335 ,  H01L29/16 ,  H01L29/778 ,  H01L29/80 ,  H01L31/072

    CPC分类号： H01L29/66431 ,  H01L29/1604 ,  H01L29/7786

    摘要： There is provided a field effect transistor including (a) an amorphous semiconductor layer made of amorphous silicon hydride containing impurities doped therein, (b) a semiconductor layer made of single crystal silicon having an electron affinity greater than that of the amorphous silicon hydride, formed on the amorphous semiconductor layer, (c) a gate insulating film formed on the semiconductor layer, and (d) a gate electrode formed on the gate insulating film. The amorphous semiconductor layer and the semiconductor layer cooperate with each other to thereby form a potential well at a junction therebetween. The above mentioned field effect transistor utilizes a difference in electron affinity between the amorphous semiconductor layer and the semiconductor layer to thereby make it possible to operate at a higher speed because carriers are not influenced by scattering of doped ions. In addition, the formation of a single crystal silicon layer on an amorphous silicon layer, which would be difficult to fabricate by epitaxial growth, can be accomplished by means of ion implantation, and can be operated in accordance with the operation principle of a conventional MOS transistor.

    摘要翻译： 提供了一种场效应晶体管，其包括（a）由非掺杂杂质掺杂的非晶硅氢化物制成的非晶半导体层，（b）由具有大于非晶硅氢化物的电子亲和力的单晶硅制成的半导体层，形成 在所述非晶半导体层上，（c）形成在所述半导体层上的栅极绝缘膜，和（d）形成在所述栅极绝缘膜上的栅电极。 非晶半导体层和半导体层彼此配合，从而在它们之间的接合处形成势阱。 上述场效应晶体管利用了非晶半导体层与半导体层之间的电子亲和力差，从而使得可以以更高的速度工作，因为载流子不受掺杂离子的散射的影响。 此外，通过离子注入可以实现通过外延生长难以制造的在非晶硅层上形成单晶硅层，并且可以根据常规MOS的操作原理来操作 晶体管。

    Method for fabricating polycrystalline silicon wafer
    80.
    发明授权
    Method for fabricating polycrystalline silicon wafer 失效
    制造多晶硅晶圆的方法

    公开(公告)号：US4561486A

    公开(公告)日：1985-12-31

    申请号：US373039

    申请日：1982-04-29

    申请人： Yasuhiro Maeda ,  Takashi Yokoyama ,  Shinichi Yagihashi

    发明人： Yasuhiro Maeda ,  Takashi Yokoyama ,  Shinichi Yagihashi

    IPC分类号： C30B11/00 ,  B22D13/00

    CPC分类号： C30B11/008 ,  C30B11/00 ,  C30B29/06 ,  C30B29/605

    摘要： A method of fabricating a polycrystalline silicon wafer, which method includes the steps of radially outwardly flowing molten liquid of silicon base material on the wafer forming surface of a turntable mechanism by means of centrifugal force, thereby forming a thin molten liquid layer in a prescribed atmosphere, and cooling and solidifying the same. An apparatus for fabricating the wafer is used to carry out the method with a recover tray arranged at the wafer forming surface for receiving the excessive silicon liquid scattered, and a wafer tray placed on the recovery tray. The wafer forming surface is cooled with coolant flowing in the wafer forming mechanism. Thus, large crystalline grains can be grown on the wafer in free states with the atmosphere from the inner surfaces of the casting mold.

    摘要翻译： 一种制造多晶硅晶片的方法，该方法包括通过离心力将硅基材料的熔融液体径向向外流动在转盘机构的晶片形成表面上的步骤，从而在规定的气氛中形成薄的熔融液体层 ，并冷却固化。 用于制造晶片的装置用于利用布置在晶片形成表面处的用于接收过量的硅液体散射的回收托盘和放置在回收托盘上的晶片托盘来执行该方法。 晶片形成表面由在晶片形成机构中流动的冷却剂冷却。 因此，大的晶粒可以从模具的内表面的气氛以自由状态在晶片上生长。