公开(公告)号：US20150380221A1

公开(公告)日：2015-12-31

申请号：US14551537

申请日：2014-11-24

Applicant: Applied Materials, Inc.

Inventor： Ren Liu ,  John C. Forster ,  Joseph Yudovsky ,  Somesh Khandelwal ,  Kallol Bera ,  Li-Qun Xia

IPC: H01J37/32 ,  C23C16/56 ,  C23C16/505 ,  C23C16/455

CPC classification number: H01J37/32091 ,  C23C16/45536 ,  C23C16/45551 ,  H01J37/32532 ,  H01J37/32559 ,  H01J37/32605

Abstract: A plasma source assembly for use with a processing chamber includes a blocker plate with a first set of apertures within an inner electrical center of the blocker plate and smaller apertures around the outer peripheral edge. The apertures can decrease gradually in diameter from the electrical center outward to the peripheral edge or can be in discrete increments with the smallest at the outer peripheral edge.

Abstract translation: 与处理室一起使用的等离子体源组件包括阻挡板，其在阻挡板的内部电气中心内具有第一组孔，并且围绕外周边缘具有较小的孔。 孔径可以从电气中心向外逐渐减小到周边边缘，或者可以在外围边缘处具有最小的离散增量。

公开(公告)号：US09187827B2

公开(公告)日：2015-11-17

申请号：US13773579

申请日：2013-02-21

Applicant: APPLIED MATERIALS, Inc.

Inventor： Gaku Furuta ,  John M. White ,  Shinichi Kurita ,  Soo Young Choi ,  Suhail Anwar ,  Robin L. Tiner

IPC: C23C16/458 ,  H01J37/32

CPC classification number: C23C16/458 ,  C23C16/4585 ,  H01J37/32559 ,  H01J37/32577 ,  H01J37/32715

Abstract: Embodiments of the present invention generally relates to substrate supports for use in a plasma processing chamber. The substrate supports, which are metallic, have ceramic inserts to prevent arcing between the substrate support and the shadow frame used to protect the edges of the substrate support during processing. In large area substrate processing chambers, the shadow frame may comprise multiple pieces. The individual pieces may be coupled together, but spaced slightly apart by a gap to permit thermal expansion. Ceramic inserts are positioned on the substrate support so that when a shadow frame is positioned adjacent thereto, the ceramic inserts are located adjacent the gaps in the shadow frame. The ceramic inserts adjacent the gap prevent and/or reduce the arcing because the gaps are located over electrically insulating material rather than electrically conductive material.

Abstract translation: 本发明的实施例一般涉及用于等离子体处理室的基板支撑件。 金属的基板支撑件具有陶瓷插入件，以防止在处理期间用于保护基板支撑件的边缘的基板支撑件和阴影框架之间的电弧。 在大面积基板处理室中，阴影框架可以包括多个部件。 单独的部件可以联接在一起，但间隔开间隔开以允许热膨胀。 陶瓷插入件定位在基板支撑件上，使得当阴影框架相邻定位时，陶瓷插入件位于阴影框架中的间隙附近。 邻近间隙的陶瓷插件防止和/或减少电弧，因为间隙位于电绝缘材料上而不是导电材料上。

公开(公告)号：US09184043B2

公开(公告)日：2015-11-10

申请号：US11758584

申请日：2007-06-05

Applicant: Gregory S. Sexton ,  Andrew D. Bailey, III ,  Andras Kuthi ,  Yunsang Kim

Inventor： Gregory S. Sexton ,  Andrew D. Bailey, III ,  Andras Kuthi ,  Yunsang Kim

IPC: H01J37/32 ,  H01L21/00 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/02

CPC classification number: H01L21/02087 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32559 ,  H01J37/32642 ,  H01J37/32862 ,  H01L21/02057 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136

Abstract: The embodiments provide apparatus and methods for removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a substrate support configured to receive the substrate. The plasma processing chamber also includes a bottom edge electrode surrounding the substrate support. The bottom edge electrode and the substrate support are electrically isolated from one another by a bottom dielectric ring. A surface of the bottom edge electrode facing the substrate is covered by a bottom thin dielectric layer. The plasma processing chamber further includes a top edge electrode surrounding a top insulator plate opposing the substrate support. The top edge electrode is electrically grounded. A surface of the top edge electrode facing the substrate is covered by a top thin dielectric layer. The top edge electrode and the bottom edge electrode oppose one another and are configured to generate a cleaning plasma to clean the bevel edge of the substrate.

Abstract translation: 这些实施例提供用于去除蚀刻副产物，电介质膜和金属膜附近的衬底斜面边缘的设备和方法，以及室内，以避免聚合物副产物和沉积膜的堆积并提高工艺产率。 在示例性实施例中，提供了构造成清洁基板的斜边缘的等离子体处理室。 等离子体处理室包括被配置为接收衬底的衬底支撑件。 等离子体处理室还包括围绕衬底支撑件的底部边缘电极。 底部边缘电极和基底支撑件通过底部介电环彼此电隔离。 面向基板的底部边缘电极的表面被底部薄的电介质层覆盖。 等离子体处理室还包括围绕与衬底支撑件相对的顶部绝缘体板的顶部边缘电极。 顶边电极电接地。 面向衬底的顶边电极的表面被顶部薄介电层覆盖。 顶边电极和下边缘电极彼此相对并且被配置为产生清洁等离子体以清洁衬底的斜边缘。

公开(公告)号：US20150243486A1

公开(公告)日：2015-08-27

申请号：US14627078

申请日：2015-02-20

Applicant: Hitachi High-Technologies Corporation

Inventor： Kenetsu Yokogawa ,  Taku Iwase ,  Akira Hirata ,  Masahito Mori ,  Masakazu Isozaki ,  Yosuke Sakai ,  Takahisa Hashimoto

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32183 ,  H01J37/32165 ,  H01J37/32559 ,  H01J37/32697 ,  H01J37/32715

Abstract: In a plasma processing apparatus including an upper electrode arranged above a sample stage on which a sample to be processed in a processing chamber is mounted to supply an electric field, and a high frequency power supply to output first high frequency power to form the electric field to the upper electrode, an insulating layer has an impedance smaller than the impedance of the feeding path for bias or the feeding path for electrostatic chuck and a current of the first high frequency power flows through a circuit that passes through the conductive plate and a member constituting an inner sidewall surface of the processing chamber from the upper electrode via the top surface of the sample stage to return to the high frequency power supply.

Abstract translation: 在等离子体处理装置中，包括布置在其上安装有处理室中待处理样品以供给电场的样品台上方的上电极和用于输出第一高频电力以形成电场的高频电源 对于上部电极，绝缘层的阻抗小于用于偏置的馈送路径或静电卡盘的馈送路径的阻抗，并且第一高频电力的电流流过通过导电板的电路和构件 从上电极经由样品台的顶表面构成处理室的内侧壁表面，以返回到高频电源。

公开(公告)号：US20150238972A1

公开(公告)日：2015-08-27

申请号：US14423618

申请日：2012-08-24

Applicant: Reinhard Müller-Siebert ,  Fabrice Monti Di Sopra ,  Harald Giese ,  Urs Friedli

Inventor： Reinhard Müller-Siebert ,  Fabrice Monti Di Sopra ,  Harald Giese ,  Urs Friedli

IPC: B02C19/18 ,  H01J37/32

CPC classification number: B02C19/18 ,  B02C2019/183 ,  H01J37/32559 ,  H01J2237/038

Abstract: The invention relates to a method for fragmenting and/or weakening material by means of high-voltage pulses, the material and a processing fluid being arranged in a processing zone formed between two electrodes such that the entire processing zone is flooded with processing fluid, and high-voltage pulses being applied to the electrodes such that high-voltage breakdowns occur between the two electrodes and/or such that predischarge channels are formed without breakdowns. An electrode with a metallic conductor is chosen for at least one of the two electrodes, the conductor being provided partially or completely with an insulator or insulating coating at the working end of the electrode that is in contact with the processing fluid, the permittivity of the insulator/insulating coating being at least 75% of the permittivity of the processing fluid.

Abstract translation: 本发明涉及一种利用高电压脉冲来破碎和/或削弱材料的方法，该材料和一种处理流体被布置在两个电极之间形成的处理区域中，使得整个处理区域被处理流体淹没，以及 高电压脉冲被施加到电极，使得在两个电极之间发生高压击穿和/或使得预充电通道形成而不发生故障。 选择具有金属导体的电极用于两个电极中的至少一个，导体部分地或完全地设置在与处理流体接触的电极的工作端处的绝缘体或绝缘涂层，介电常数 绝缘体/绝缘涂层是加工流体介电常数的至少75％。

公开(公告)号：US08883246B2

公开(公告)日：2014-11-11

申请号：US12747338

申请日：2008-12-12

Applicant: Mihai Nicolescu ,  Äke Hjalmarsson ,  Klim Kouznetsov

Inventor： Mihai Nicolescu ,  Äke Hjalmarsson ,  Vladimir Kouznetsov

IPC: C23C16/52 ,  H01J37/32 ,  C23C14/22 ,  C23C14/34 ,  C23C16/44 ,  C23C16/515 ,  H01J37/34

CPC classification number: H01J37/32174 ,  C23C14/22 ,  C23C14/3485 ,  C23C16/44 ,  C23C16/515 ,  H01J37/32091 ,  H01J37/32559 ,  H01J37/3467 ,  H01J2237/3321

Abstract: In plasma activated chemical vapour deposition a plasma decomposition unit is used that is arranged in or connected to a vacuum vessel having a relatively low pressure or vacuum, to which an operating gas is provided. Periodically repeated voltage pulses are applied between the anode and the cathode of the plasma decomposition unit in such a manner that pulsed electric discharges are produced between the cathode and the surrounding anode of the plasma decomposition unit. The anode is arranged in a special way so that at least a portion thereof will obtain only an electrically conductive coating or substantially no coating when operating the unit. For that purpose, the anode includes a portion located in the direct vicinity of the free surface of the cathode. The portion is a flange or edge portion which is located or extends over margins of the free surface of the cathode. In that way, the anode will include a portion that is shielded for direct coating with particles from the plasma formed and that hence will obtain e.g. substantially no dielectric coating at all.

Abstract translation: 在等离子体激活的化学气相沉积中，使用等离子体分解单元，其被布置在具有相对低的压力或真空的真空容器中或与其连接，操作气体被提供给该真空容器。 在等离子体分解单元的阳极和阴极之间施加周期性重复的电压脉冲，使得在等离子体分解单元的阴极和周围阳极之间产生脉冲放电。 阳极以特殊方式布置，使得当操作该单元时，其至少一部分将仅获得导电涂层或基本上不涂层。 为此，阳极包括位于阴极自由表面附近的部分。 该部分是位于或延伸在阴极的自由表面的边缘上的凸缘或边缘部分。 以这种方式，阳极将包括屏蔽的部分，其直接涂覆有来自形成的等离子体的颗粒。 完全没有电介质涂层。

公开(公告)号：US20140217891A1

公开(公告)日：2014-08-07

申请号：US14167364

申请日：2014-01-29

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hideo ETO ,  Hirokatsu Sonoda ,  Hisashi Hashiguchi ,  Makoto Saito

IPC: H01J37/32 ,  H01J9/18

CPC classification number: H01J37/32568 ,  C23C16/45565 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32559

Abstract: According to embodiments, an inner electrode having a plurality of gas holes includes a first contact surface provided to a part of an outer peripheral surface. An outer electrode includes a second contact surface provided to a part of an inner peripheral surface, corresponding to the first contact surface of the inner electrode. The inner electrode and the outer electrode come into contact with each other on the first and second contact surfaces. A brazing filler metal is filled in a brazing filler metal filling hole that reaches from front side main surfaces of the inner electrode and the outer electrode to the contact surfaces to join the inner electrode and the outer electrode.

Abstract translation: 根据实施例，具有多个气孔的内电极包括设置在外周面的一部分的第一接触面。 外电极包括设置在内周面的与内电极的第一接触面对应的一部分的第二接触面。 内电极和外电极在第一和第二接触表面上彼此接触。 钎焊填充金属填充在从内侧电极和外部电极的前侧主表面到接触面到达内部电极和外部电极的钎料填充金属填充孔中。

公开(公告)号：US20140020709A1

公开(公告)日：2014-01-23

申请号：US14035023

申请日：2013-09-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takamichi KIKUCHI

IPC: H01L21/02

CPC classification number: H01J37/32862 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32559 ,  H01J2237/022 ,  H01L21/6831

Abstract: A plasma etching apparatus includes an electrostatic chuck and an etching gas supply unit for supplying an etching gas to a processing space between a first and a second electrode to perform a dry etching process on the target object. The apparatus further includes a cleaning gas supply unit for supplying a cleaning gas to a processing space; a first high frequency power supply unit for supplying a first high frequency power to the first electrode; and a controller for controlling the first high frequency power supply unit such that a first period during which the first high frequency power has a first amplitude that generates the plasma and a second period during which the first high frequency power has a second amplitude that generates substantially no plasma are alternately repeated at a specific cycle when the plasma cleaning is performed in the processing chamber without the target object.

Abstract translation: 等离子体蚀刻装置包括静电卡盘和蚀刻气体供给单元，用于向第一和第二电极之间的处理空间提供蚀刻气体，以对目标物体进行干蚀刻处理。 该装置还包括用于向处理空间提供清洁气体的清洁气体供应单元; 第一高频电源单元，用于向第一电极提供第一高频电力; 以及控制器，用于控制第一高频电源单元，使得第一高频功率具有产生等离子体的第一幅度的第一周期和第一高频功率具有基本上产生第二高频功率的第二时段 当在没有目标物体的处理室中进行等离子体清洗时，不会在特定循环中交替重复等离子体。

公开(公告)号：US20130344651A1

公开(公告)日：2013-12-26

申请号：US13820909

申请日：2012-06-26

Applicant: Yoshikazu Nakano ,  Akihiro Goto

Inventor： Yoshikazu Nakano ,  Akihiro Goto

IPC: H01L21/02

CPC classification number: H01J37/32559 ,  B23H1/022 ,  C23C14/16 ,  C23C14/3485 ,  H01J37/32568 ,  H01L21/02631

Abstract: A discharge surface treatment apparatus supplies an electrode material to a surface of a treatment target member by generating pulsating discharges across an inter-electrode gap to form a coating of the electrode material, and includes a switching element that turns application of a voltage from a power source to the inter-electrode gap on/off, a capacitance element that is connected to the switching element in parallel with the inter-electrode gap, an inductance element that is connected in series between both of the switching element and the capacitance element and the inter-electrode gap, and a control unit that includes a function of periodically performing on/off so that an induced electromotive force generated in the inductance element due to a change in the current of discharge generated across the inter-electrode gap can be used as a voltage that induces the next discharge

Abstract translation: 放电表面处理装置通过产生跨电极间隙的脉动放电而将电极材料供给到处理对象部件的表面，形成电极材料的涂层，并且包括切换元件，其将来自电力的电压 源极与电极间间隔开通/断开，与开关元件并联连接到电极间间隔的电容元件，串联连接在开关元件和电容元件之间的电感元件和 电极间间隙的控制单元，以及具有周期性地进行开/关的功能的控制单元，使得由于跨越电极间间隙产生的放电电流的变化而在电感元件中产生的感应电动势可以用作 导致下次放电的电压

公开(公告)号：US20130228124A1

公开(公告)日：2013-09-05

申请号：US13773579

申请日：2013-02-21

Applicant: Gaku FURUTA ,  John M. WHITE ,  Shinichi KURITA ,  Soo Young CHOI ,  Suhail ANWAR ,  Robin L. TINER

Inventor： Gaku FURUTA ,  John M. WHITE ,  Shinichi KURITA ,  Soo Young CHOI ,  Suhail ANWAR ,  Robin L. TINER

IPC: C23C16/458

CPC classification number: C23C16/458 ,  C23C16/4585 ,  H01J37/32559 ,  H01J37/32577 ,  H01J37/32715

Abstract: Embodiments of the present invention generally relates to substrate supports for use in a plasma processing chamber. The substrate supports, which are metallic, have ceramic inserts to prevent arcing between the substrate support and the shadow frame used to protect the edges of the substrate support during processing. In large area substrate processing chambers, the shadow frame may comprise multiple pieces. The individual pieces may be coupled together, but spaced slightly apart by a gap to permit thermal expansion. Ceramic inserts are positioned on the substrate support so that when a shadow frame is positioned adjacent thereto, the ceramic inserts are located adjacent the gaps in the shadow frame. The ceramic inserts adjacent the gap prevent and/or reduce the arcing because the gaps are located over electrically insulating material rather than electrically conductive material.

Abstract translation: 本发明的实施例一般涉及用于等离子体处理室的基板支撑件。 金属的衬底支撑件具有陶瓷插入件，以防止衬底支撑件和用于在加工期间保护衬底支撑件的边缘的阴影框架之间的电弧。 在大面积基板处理室中，阴影框架可以包括多个部件。 单独的部件可以联接在一起，但间隔开间隔开以允许热膨胀。 陶瓷插入件定位在基板支撑件上，使得当阴影框架相邻定位时，陶瓷插入件位于阴影框架中的间隙附近。 邻近间隙的陶瓷插件防止和/或减少电弧，因为间隙位于电绝缘材料上而不是导电材料上。