公开(公告)号：US08951827B2

公开(公告)日：2015-02-10

申请号：US13924242

申请日：2013-06-21

Applicant: Izar Solar Inc.

Inventor： David Ahmari ,  Swee Lim ,  Shiva Rai ,  David Forbes

IPC: H01L21/00 ,  H01L31/0336 ,  H01L31/065 ,  H01L31/0725 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/0336 ,  H01L31/065 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/072 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/076 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

Abstract: Manufacture of multi-junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields and lower costs. Certain solar cells may further include one or more compositional gradients of one or more semiconductor elements in one or more semiconductor layers, resulting in a more optimal solar cell device.

Abstract translation: 公开了多结太阳能电池的制造及其装置。 该结构还适用于提供更均匀且一致的太阳能电池结构的制造，从而提高产量并降低成本。 一些太阳能电池还可以包括一个或多个半导体层中的一个或多个半导体元件的一个或多个组成梯度，从而产生更优化的太阳能电池器件。

公开(公告)号：US08895846B2

公开(公告)日：2014-11-25

申请号：US12940876

申请日：2010-11-05

Applicant: Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

Inventor： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

IPC: H01L31/00 ,  H01L31/0735 ,  H01L31/0236 ,  H01L31/0304

CPC classification number: H01L31/0304 ,  H01L31/022441 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/03046 ,  H01L31/065 ,  H01L31/0682 ,  H01L31/0693 ,  H01L31/0735 ,  Y02E10/50 ,  Y02E10/52 ,  Y02E10/544

Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit, according to embodiments of the invention, may have a very thin absorber layer produced by epitaxial lift-off (ELO), all electrical contacts positioned on the back side of the PV device to avoid shadowing, and/or front side and back side light trapping employing a diffuser and a reflector to increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer applied at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

公开(公告)号：US08895838B1

公开(公告)日：2014-11-25

申请号：US12719811

申请日：2010-03-08

Applicant: Roger E. Welser ,  Ashok K. Sood

Inventor： Roger E. Welser ,  Ashok K. Sood

IPC: H01L31/00 ,  H01L31/0352 ,  H01L31/0725 ,  H01L31/065 ,  H01L31/0304

CPC classification number: H01L31/1884 ,  G02B1/115 ,  H01L31/0203 ,  H01L31/02165 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022475 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/035263 ,  H01L31/0445 ,  H01L31/048 ,  H01L31/056 ,  H01L31/065 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/184 ,  H01L31/1844 ,  Y02E10/52 ,  Y02E10/544

Abstract: Material and antireflection structure designs and methods of manufacturing are provided that produce efficient photovoltaic power conversion from single- and multijunction devices. Materials of different energy gap are combined in the depletion region of at least one of the semiconductor junctions. Higher energy gap layers are positioned to reduce the diode dark current and enhance the operating voltage by suppressing both carrier injections across the junction and recombination rates within the junction. Step-graded antireflection structures are placed above the active region of the device in order to increase the photocurrent.

Abstract translation: 提供材料和抗反射结构设计和制造方法，其从单和多结装置产生高效的光伏电力转换。 不同能隙的材料组合在至少一个半导体结的耗尽区中。 定位更高的能隙层以减少二极管暗电流并且通过抑制跨结的载流子注入和结中的复合速率来提高工作电压。 步进渐变防反射结构放置在器件的有源区上方，以增加光电流。

公开(公告)号：US20140318610A1

公开(公告)日：2014-10-30

申请号：US14357717

申请日：2012-11-08

Applicant: LG INNOTEK CO., LTD.

Inventor： Gi Gon Park

IPC: H01L31/065 ,  H01L31/0224 ,  H01L31/032

CPC classification number: H01L31/065 ,  H01L31/022441 ,  H01L31/0322 ,  H01L31/0749 ,  Y02E10/541 ,  Y02E10/542

Abstract: Disclosed are a solar cell, and a method of fabricating the same. The solar cell includes: a back electrode layer on a support substrate; a light absorbing layer on the back electrode layer; and a front electrode layer on the light absorbing layer, wherein the light absorbing layer has a bandgap energy which is gradually increased toward a top surface of the light absorbing layer.

Abstract translation: 公开了一种太阳能电池及其制造方法。 太阳能电池包括：支撑基板上的背面电极层; 背面电极层上的光吸收层; 以及在所述光吸收层上的前电极层，其中所述光吸收层具有朝向所述光吸收层的顶表面逐渐增加的带隙能。

公开(公告)号：US08871555B2

公开(公告)日：2014-10-28

申请号：US13157570

申请日：2011-06-10

Applicant: Shunpei Yamazaki

Inventor： Shunpei Yamazaki

IPC: H01L21/00 ,  H01L31/0376 ,  H01L31/0352 ,  H01L31/20 ,  H01L31/076 ,  H01L31/028 ,  H01L31/0236 ,  H01L31/075 ,  H01L31/18 ,  H01L31/0368

CPC classification number: H01L31/035281 ,  H01L31/022425 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/03529 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/065 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: A photoelectric conversion device having a new anti-reflection structure is provided. A photoelectric conversion device includes a first-conductivity-type crystalline semiconductor region that is provided over a conductive layer; a crystalline semiconductor region that is provided over the first-conductivity-type crystalline semiconductor region and has an uneven surface by including a plurality of whiskers including a crystalline semiconductor; and a second-conductivity-type crystalline semiconductor region that covers the uneven surface of the crystalline semiconductor region having the uneven surface, the second conductivity type being opposite to the first conductivity type. In the photoelectric conversion device, a concentration gradient of an impurity element imparting the first conductivity type is formed from the first-conductivity-type crystalline semiconductor region toward the crystalline semiconductor region having the uneven surface.

Abstract translation: 提供具有新的抗反射结构的光电转换装置。 光电转换装置包括设置在导电层上的第一导电型晶体半导体区域; 提供在第一导电型晶体半导体区域上并且具有不平坦表面的晶体半导体区域，其包括包括结晶半导体的多个晶须; 以及覆盖具有不平坦表面的晶体半导体区域的不平坦表面的第二导电型晶体半导体区域，第二导电类型与第一导电类型相反。 在光电转换装置中，由第一导电型结晶半导体区域向具有不平坦表面的晶体半导体区域形成赋予第一导电类型的杂质元素的浓度梯度。

公开(公告)号：US08852993B2

公开(公告)日：2014-10-07

申请号：US14187029

申请日：2014-02-21

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang

IPC: H01L21/00 ,  H01L31/18

CPC classification number: H01L31/1864 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02485 ,  H01L21/0251 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/0322 ,  H01L31/065 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: A gallium-containing alloy is formed on the light-receiving surface of a CIGS absorber layer, and, in conjunction with a subsequent selenization or anneal process, is converted to a gallium-rich region at the light-receiving surface of the CIGS absorber layer. A second gallium-rich region is formed at the back contact surface of the CIGS absorber layer during selenization, so that the CIGS absorber layer has a double-graded gallium concentration that increases toward the light-receiving surface and toward the back contact surface of the CIGS absorber layer. The double-graded gallium concentration advantageously produces a double-graded bandgap profile for the CIGS absorber layer.

公开(公告)号：US20140216535A1

公开(公告)日：2014-08-07

申请号：US14170989

申请日：2014-02-03

Applicant: FIRST SOLAR, INC.

Inventor： Daniel Damjanovic ,  Jing Guo ,  Sreenivas Jayaraman ,  Oleh P. Karpenko ,  Feng Liao ,  Chong Lim ,  Rick C. Powell ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/065 ,  H01L31/0296 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/065 ,  H01L31/02167 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device including a protective layer between a window layer and an absorber layer, the protective layer inhibiting dissolving/intermixing of the window layer into the absorber layer during a device activation step, and methods of forming such photovoltaic devices.

Abstract translation: 一种光伏器件，包括在窗口层和吸收层之间的保护层，该保护层在器件激活步骤期间抑制了窗口层在吸收层中的溶解/混合，以及形成这种光伏器件的方法。

公开(公告)号：US20140170802A1

公开(公告)日：2014-06-19

申请号：US14187029

申请日：2014-02-21

Applicant: INTERMOLECULAR, INC.

Inventor： Haifan Liang

IPC: H01L31/18

CPC classification number: H01L31/1864 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02485 ,  H01L21/0251 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/0322 ,  H01L31/065 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: A gallium-containing alloy is formed on the light-receiving surface of a CIGS absorber layer, and, in conjunction with a subsequent selenization or anneal process, is converted to a gallium-rich region at the light-receiving surface of the CIGS absorber layer. A second gallium-rich region is formed at the back contact surface of the CIGS absorber layer during selenization, so that the CIGS absorber layer has a double-graded gallium concentration that increases toward the light-receiving surface and toward the back contact surface of the CIGS absorber layer. The double-graded gallium concentration advantageously produces a double-graded bandgap profile for the CIGS absorber layer.

Abstract translation: 在CIGS吸收层的光接收表面上形成含镓合金，并且随后的硒化或退火工艺在CIGS吸收层的光接收表面处转化为富镓区域 。 在硒化期间，在CIGS吸收体层的背面接触表面形成第二富含镓区域，使得CIGS吸收层具有双重梯度的镓浓度，朝向光接收表面朝向接收面的后接触面增加 CIGS吸收层。 双分级镓浓度有利地产生CIGS吸收层的双梯度带隙分布。

公开(公告)号：US20140158187A1

公开(公告)日：2014-06-12

申请号：US13749263

申请日：2013-01-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Bahman Hekmatshoartabari ,  Ali Khakifirooz ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC: H01L31/065

CPC classification number: H01L31/065 ,  H01L31/02168 ,  H01L31/022433 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for fabricating a photovoltaic device includes forming a patterned layer on a doped emitter portion of the photovoltaic device, the patterned layer including openings that expose areas of the doped emitter portion and growing an epitaxial layer over the patterned layer such that a crystalline phase grows in contact with the doped emitter portion and a non-crystalline phase grows in contact with the patterned layer. The non-crystalline phase is removed from the patterned layer. Conductive contacts are formed on the epitaxial layer in the openings to form a contact area for the photovoltaic device.

Abstract translation: 一种用于制造光伏器件的方法包括在光伏器件的掺杂发射极部分上形成图案化层，所述图案化层包括暴露掺杂发射极部分的区域并在图案化层上生长外延层的开口，使得结晶相生长 与掺杂的发射极部分接触并且非结晶相生长与图案化层接触。 从图案化层去除非结晶相。 导电触点形成在开口中的外延层上，以形成光伏器件的接触面积。

公开(公告)号：US08664033B2

公开(公告)日：2014-03-04

申请号：US13331793

申请日：2011-12-20

Applicant: Haifan Liang

Inventor： Haifan Liang

IPC: H01L21/00

CPC classification number: H01L31/1864 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02485 ,  H01L21/0251 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/0322 ,  H01L31/065 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: A gallium-containing alloy is formed on the light-receiving surface of a CIGS absorber layer, and, in conjunction with a subsequent selenization or anneal process, is converted to a gallium-rich region at the light-receiving surface of the CIGS absorber layer. A second gallium-rich region is formed at the back contact surface of the CIGS absorber layer during selenization, so that the CIGS absorber layer has a double-graded gallium concentration that increases toward the light-receiving surface and toward the back contact surface of the CIGS absorber layer. The double-graded gallium concentration advantageously produces a double-graded bandgap profile for the CIGS absorber layer.