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    Deposition method of a metallic layer on a substrate of a resonator device
    81.
    发明授权
    Deposition method of a metallic layer on a substrate of a resonator device 有权

    公开(公告)号：US12043891B2

    公开(公告)日：2024-07-23

    申请号：US17196999

    申请日：2021-03-09

    Applicant: SPTS Technologies Limited

    Inventor： Scott Haymore ,  Adrian Thomas ,  Steve Burgess

    IPC: H03H3/08 ,  C23C14/16 ,  C23C14/35 ,  H03H9/02

    CPC classification number: C23C14/165 ,  C23C14/351 ,  H03H3/08 ,  H03H9/02047 ,  H03H9/02574 ,  H03H9/02614

    Abstract: Sputter depositing a metallic layer on a substrate in the fabrication of a resonator device includes providing a magnetron sputtering apparatus comprising a chamber, a substrate support disposed within the chamber, a target made from a metallic material, and a plasma generating device, wherein the substrate support and the target are separated by a distance of 10 cm or less; supporting the substrate on the substrate support; performing a DC magnetron sputtering step that comprises sputtering the metallic material from the target onto the substrate so as to form a metallic layer on the substrate, wherein during the DC magnetron sputtering step the chamber has a pressure of at least 6 mTorr of a noble gas, the target is supplied with a power having a power density of at least 6 W/cm2, and the substrate has a temperature in the range of 200-600° C.

    Method and Apparatus for Plasma Etching Dielectric Substrates
    82.
    发明公开
    Method and Apparatus for Plasma Etching Dielectric Substrates 审中-公开

    公开(公告)号：US20240212998A1

    公开(公告)日：2024-06-27

    申请号：US18375238

    申请日：2023-09-29

    Applicant: SPTS Technologies Limited

    Inventor： Andrew Rubin ,  Kevin Riddell ,  Nicolas Launay

    IPC: H01J37/32 ,  H01L21/683

    CPC classification number: H01J37/32724 ,  H01L21/6833

    Abstract: A method of plasma etching a workpiece and a plasma etching apparatus are provided. At least one semiconductor layer is plasma etched by generating a plasma in the plasma chamber. A period of time after the plasma is ignited, the operation of the ESC is switched to a monopolar mode of operation in which the electrodes have the same voltage applied to each electrode. The operation of the ESC is switched to a second bipolar mode of operation in which a positive voltage is applied to one of the electrodes and a negative voltage is applied to another of the electrodes.

    PE-CVD apparatus and method
    85.
    发明授权
    PE-CVD apparatus and method 有权

    公开(公告)号：US11802341B2

    公开(公告)日：2023-10-31

    申请号：US17144699

    申请日：2021-01-08

    Applicant: SPTS Technologies Limited

    Inventor： Stephen Burgess ,  Kathrine Crook ,  Daniel Archard ,  William Royle ,  Euan Alasdair Morrison

    IPC: C23C16/40 ,  C23C16/513 ,  C23C16/455

    CPC classification number: C23C16/513 ,  C23C16/455

    Abstract: A capacitively coupled Plasma Enhanced Chemical Vapour Deposition (PE-CVD) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an RF power source connected to the gas inlet structure for supplying RF power thereto. The gas inlet structure has an edge region, a central region which depends downwardly with respect to the edge region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture to the chamber. The edge region and the central region both constitute part of the second electrode. The precursor gas inlets are disposed in the edge region and the central region is spaced apart from the substrate support to define a plasma dark space channel.

    Method of plasma etching
    88.
    发明授权
    Method of plasma etching 有权

    公开(公告)号：US11489106B2

    公开(公告)日：2022-11-01

    申请号：US17101951

    申请日：2020-11-23

    Applicant: SPTS Technologies Limited

    Inventor： Huma Ashraf ,  Kevin Riddell ,  Codrin Prahoveanu

    IPC: H01L21/3065 ,  H01L41/332 ,  H01J37/32

    Abstract: A structure comprising a semiconductor substrate and a layer of PZT (lead zirconate titanate) is etched by performing a first plasma etch step with a first etch process gas mixture. The first etch process gas mixture comprises at least one fluorine containing species. The first plasma etch step is performed so that involatile metal etch products are deposited onto interior surfaces of the chamber. The structure is further etched by performing a second plasma etch step with a second etch process gas mixture. The second etch process gas mixture comprises at least one fluorocarbon species. The second plasma etch step is performed so that a fluorocarbon polymer layer is deposited onto interior surfaces of the chamber to overlay involatile metal etch products deposited in the first plasma etch step and to provide a substrate on which further involatile metal etch products can be deposited.

    Apparatus and method for processing a substrate
    89.
    发明授权
    Apparatus and method for processing a substrate 有权

    公开(公告)号：US11236433B2

    公开(公告)日：2022-02-01

    申请号：US16845487

    申请日：2020-04-10

    Applicant: SPTS Technologies Limited

    Inventor： Martin Ayres ,  John MacNeil ,  Trevor Thomas

    IPC: C25D7/12 ,  C25D21/10 ,  C25D17/00 ,  C25D21/12

    Abstract: An apparatus for electrochemically processing a semiconductor substrate includes a processing chamber of the type that is sealable to a peripheral portion of a semiconductor substrate so as to define a covered processing volume. The semiconductor substrate is supported by a substrate support. A magnetic arrangement is disposed outside of the processing chamber and produces a magnetic field. The magnetic field is changed using a controller for controlling the magnetic arrangement. An agitator is disposed within the processing chamber. The agitator comprises a magnetically responsive element which is responsive to changes in the magnetic field of the magnetic arrangement so as to provide a reciprocating motion to the agitator.

    Method of depositing a SiN film
    90.
    发明授权
    Method of depositing a SiN film 有权

    公开(公告)号：US11217442B2

    公开(公告)日：2022-01-04

    申请号：US16394369

    申请日：2019-04-25

    Applicant: SPTS TECHNOLOGIES LIMITED

    Inventor： Mark Carruthers

    IPC: H01L21/02 ,  H01L27/12 ,  H01L27/32 ,  H01L51/00 ,  H01L51/56

    Abstract: A method of depositing a SiN film onto a flexible substrate includes providing the flexible substrate, and depositing the SiN film onto the flexible substrate in a plasma enhanced chemical vapour deposition (PECVD) process using SiH4, N2 and H2, in which the temperature of the substrate is 200° C. or less and SiH4 is introduced into the PECVD process at a flow rate of greater than 100 sccm.

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