利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

209 条记录 (耗时 0.027 秒)

    Semiconductor light emitting device and method for manufacturing the same
    81.
    发明申请
    Semiconductor light emitting device and method for manufacturing the same 有权

    公开(公告)号：US20060056474A1

    公开(公告)日：2006-03-16

    申请号：US11220637

    申请日：2005-09-08

    申请人： Akira Fujimoto ,  Koji Asakawa ,  Kenichi Ohashi

    发明人： Akira Fujimoto ,  Koji Asakawa ,  Kenichi Ohashi

    IPC分类号： H01S5/00

    CPC分类号： H01L33/22

    摘要： In a semiconductor light emitting device, a semiconductor light emitting element has a light extracted surface on which a plurality of convex structures is formed. The convex structures each have a conical mesa portion constituting a refractive index gradient structure, a cylindrical portion constituting a diffraction grating structure, and a conical portion constituting a refractive index gradient structure. The mesa portion, cylindrical portion, and conical portion are arranged in this order from the light extracted surface. The period between the convex structures is longer than 1/(the refractive index of an external medium+the refractive index of the convex structures) of an emission wavelength and equal to or shorter than the emission wavelength. The circle-equivalent average diameter of the cylindrical portion is ⅓ to 9/10 of that of the bottom of the mesa portion.

    Nonvolatile semiconductor memory device
    83.
    发明授权
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号：US08890234B2

    公开(公告)日：2014-11-18

    申请号：US13721860

    申请日：2012-12-20

    申请人： Masaya Terai ,  Shigeki Hattori ,  Hideyuki Nishizawa ,  Koji Asakawa ,  Tsukasa Tada

    发明人： Masaya Terai ,  Shigeki Hattori ,  Hideyuki Nishizawa ,  Koji Asakawa ,  Tsukasa Tada

    IPC分类号： H01L29/792 ,  H01L21/28 ,  H01L51/05 ,  H01L27/115 ,  H01L51/00

    CPC分类号： H01L27/11582 ,  G11C13/0016 ,  G11C13/004 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/71 ,  G11C2213/75 ,  H01L21/28282 ,  H01L29/4234 ,  H01L29/51 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518 ,  H01L29/792 ,  H01L29/7926 ,  H01L51/0078 ,  H01L51/0591

    摘要： A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film formed on the semiconductor layer; an organic molecular layer that is formed on the tunnel insulating film, and includes first organic molecules and second organic molecules having a smaller molecular weight than the first organic molecules, the first organic molecules each including a first alkyl chain or a first alkyl halide chain having one end bound to the tunnel insulating film, the first organic molecules each including a charge storage portion bound to the other end of the first alkyl chain or the first alkyl halide chain, the second organic molecules each including a second alkyl chain or a second alkyl halide chain having one end bound to the tunnel insulating film; a block insulating film formed on the organic molecular layer; and a control gate electrode formed on the block insulating film.

    摘要翻译： 实施例的非易失性半导体存储器件包括：半导体层; 形成在半导体层上的隧道绝缘膜; 形成在所述隧道绝缘膜上的有机分子层，并且包括第一有机分子和具有比所述第一有机分子分子量小的第二有机分子，所述第一有机分子各自包含第一烷基链或第一烷基卤链，所述第一烷基链或第一烷基卤链具有 所述第一有机分子各自包含结合到所述第一烷基链或所述第一烷基卤链的另一端的电荷存储部分，所述第二有机分子各自包含第二烷基链或第二烷基 卤化物链的一端与隧道绝缘膜结合; 形成在有机分子层上的块绝缘膜; 以及形成在所述块绝缘膜上的控制栅电极。

    PATTERN FORMING METHOD
    86.
    发明申请
    PATTERN FORMING METHOD 有权
    图案形成方法

    公开(公告)号：US20120127454A1

    公开(公告)日：2012-05-24

    申请号：US13239449

    申请日：2011-09-22

    申请人： Hiroko NAKAMURA ,  Koji Asakawa ,  Shigeki Hattori ,  Satoshi Tanaka ,  Toshiya Kotani

    发明人： Hiroko NAKAMURA ,  Koji Asakawa ,  Shigeki Hattori ,  Satoshi Tanaka ,  Toshiya Kotani

    IPC分类号： G03B27/32

    CPC分类号： G03F7/0002 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00

    摘要： According to one embodiment, a pattern including first and second block phases is formed by self-assembling a block copolymer onto a film to be processed. The entire block copolymer present in a first region is removed under a first condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in a region other than the first region. The first block phase present in a second region is selectively removed under a second condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in an overlap region between a region other than the first region and a region other than the second region, and leaving a pattern of second block phase in the second region excluding the overlap region. The film is etched with the left patterns as masks.

    摘要翻译： 根据一个实施方案，通过将嵌段共聚物自组装成待加工的膜来形成包括第一和第二嵌段相的图案。 存在于第一区域中的整个嵌段共聚物在第一条件下通过进行能量束照射和显影而除去，从而在第一区域以外的区域留下包括第一和第二嵌段相的图案。 存在于第二区域中的第一块相位通过进行能量束照射和显影而在第二条件下被选择性地去除，从而在包括第一区域和第一区域之间的重叠区域中留下包括第一和第二块相的图案， 区域，并且在除了重叠区域之外的第二区域中留下第二块相位的图案。 用左图案蚀刻该胶片作为掩模。

    Silicone resin composition
    88.
    发明授权
    Silicone resin composition 有权
    硅树脂组合物

    公开(公告)号：US07851564B2

    公开(公告)日：2010-12-14

    申请号：US11958111

    申请日：2007-12-17

    申请人： Shinji Murai ,  Koji Asakawa

    发明人： Shinji Murai ,  Koji Asakawa

    IPC分类号： C08G77/08

    CPC分类号： C08L83/04 ,  C08G77/12 ,  C08G77/20 ,  C08K5/5425 ,  C08K5/56 ,  H01L2224/48091 ,  Y10T428/31663 ,  C08L83/00 ,  H01L2924/00014

    摘要： A silicone resin composition is provided, which includes an alkenyl group-containing polysiloxane represented by the following average composition formula (PSA(1)), a hydro group-containing polysiloxane represented by the following average composition formula (PSA(2)), two kinds of polysiloxane, both having opposite ends sealed with a vinyl group, which are represented by the following formulas (PSC(1) and PSC(4)), and a hydrosilylating catalyst:

    摘要翻译： 提供一种有机硅树脂组合物，其包含由以下平均组成式（PSA（1））表示的含烯基的聚硅氧烷，由以下平均组成式（PSA（2））表示的含氢基聚硅氧烷，两 由下式（PSC（1）和PSC（4））表示的具有用乙烯基封端的相对端的聚硅氧烷种类和氢化硅烷化催化剂：

    Electrostatic spraying device
    89.
    发明授权
    Electrostatic spraying device 有权
    静电喷涂装置

    公开(公告)号：US07823808B2

    公开(公告)日：2010-11-02

    申请号：US10588437

    申请日：2004-02-09

    申请人： Naoki Yamaguchi ,  Koji Asakawa ,  David Edward Wilson ,  Shunichi Nagasawa

    发明人： Naoki Yamaguchi ,  Koji Asakawa ,  David Edward Wilson ,  Shunichi Nagasawa

    IPC分类号： B05B5/00 ,  A62C13/62 ,  A62C11/00 ,  B01D17/00 ,  B04B9/04 ,  A61M11/00 ,  A61M15/00 ,  B65D35/28 ,  B65D35/00 ,  B65D1/32 ,  G01F11/00 ,  B05B7/00

    CPC分类号： B05B5/0531 ,  B05B5/1691

    摘要： An electrostatic spraying device having a removable cartridge with a reservoir containing a volume of liquid compositions to be electrically sprayed on a user's skin. The device includes a nozzle for dispensing the liquid as well as an emitter electrode disposed adjacent to the nozzle for charging the liquid composition just being dispensed from the nozzle. A field electrode surrounds the reservoir in order to charge the liquid composition within the reservoir, thereby avoiding an occurrence of electric current which would otherwise flow in the liquid composition and would deteriorate the composition remaining in the reservoir. The reservoir is devoid of the field electrode, and therefor can be designed into a simple and compact structure without being restricted by the field electrode, assuring to have an enhanced liquid containing volume in relation to the bulk of the removable cartridge.

    摘要翻译： 一种静电喷涂装置，其具有可移除的墨盒，该墨盒具有储存器，该储存器包含一定量的液体组合物，以电喷涂在使用者的皮肤上。 该装置包括用于分配液体的喷嘴以及邻近喷嘴设置的用于对从喷嘴分配的液体组合物进行充电的发射电极。 场电极围绕储存器，以便对储存器内的液体组合物进行充电，从而避免电流的发生，否则会流入液体组合物中，并且会使残留在储存器中的组合物劣化。 储存器没有场电极，因此可以将其设计成简单紧凑的结构，而不受场电极的限制，确保相对于可移除盒的体积具有增强的液体容积。