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    OXIDE AND METAL REMOVAL
    81.
    发明申请
    OXIDE AND METAL REMOVAL 有权
    氧化物和金属去除

    公开(公告)号：US20150345028A1

    公开(公告)日：2015-12-03

    申请号：US14288696

    申请日：2014-05-28

    Applicant: Applied Materials, Inc.

    Inventor： Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Nitin K. Ingle ,  Jeffrey W. Anthis ,  Benjamin Schmiege

    IPC: C23F1/12 ,  H01L21/3213 ,  H01J37/32

    CPC classification number: C23F1/12 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J2237/327 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/32135 ,  H01L21/32138

    Abstract: Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials. A thin metal oxide layer may be present on the surface of the metal layer, in which case a local plasma from hydrogen may be used to remove the oxygen or amorphize the near surface region, which has been found to increase the overall etch rate.

    Abstract translation: 本文描述了用于蚀刻难以挥发的金属膜的方法。 这些方法包括将金属膜暴露于含氯前体（例如Cl 2）。 然后从基板处理区域除去氯。 将含碳和氮的前体（例如TMEDA）输送到基底加工区域以形成从金属膜的表面解吸的挥发性金属络合物。 所提供的方法去除金属，同时非常缓慢地除去其它暴露的材料。 金属层的表面上可能存在薄的金属氧化物层，在这种情况下，可以使用来自氢的局部等离子体来除去氧或使近表面区域非晶化，这已经被发现增加了整个蚀刻速率。

    Deposition of N-metal films comprising aluminum alloys
    82.
    发明授权
    Deposition of N-metal films comprising aluminum alloys 有权
    包含铝合金的N金属膜的沉积

    公开(公告)号：US09145612B2

    公开(公告)日：2015-09-29

    申请号：US13930194

    申请日：2013-06-28

    Applicant: Applied Materials, Inc.

    Inventor： Srinivas Gandikota ,  Xinliang Lu ,  Shih Chung Chen ,  Wei Tang ,  Jing Zhou ,  Seshadri Ganguli ,  David Thompson ,  Jeffrey W. Anthis ,  Atif Noori ,  Faruk Gungor ,  Dien-Yeh Wu ,  Mei Chang ,  Xinyu Fu ,  Yu Lei

    IPC: C23C18/00 ,  C23C16/08 ,  C23C16/18 ,  C23C16/455

    CPC classification number: C23C18/00 ,  C23C16/08 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/45553

    Abstract: Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl4, TaCl5 and HfCl4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)3-aAlHa]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.

    Abstract translation: 提供了沉积包括铝合金的膜的方法，其可以适合作为N-金属膜。 某些方法包括将衬底表面暴露于包含选自TiCl 4，TaCl 5和HfCl 4的金属卤化物的金属卤化物前体，以在衬底表面提供金属卤化物; 清洗金属卤化物; 将基材表面暴露于包含一种或多种二氢化铝氢化物，二乙基氢化铝，甲基二氢铝和式[（C x H y）3-a AlHa] n的烷基铝氢化物的烷基铝前体，其中x具有1至3的值，y 具有2x + 2的值，a具有1至2的值，并且n具有1至4的值; 并将基材表面暴露于含有二甲基乙基胺丙烷，甲基吡咯烷烃，二（甲基吡咯烷）甲烷和三甲基胺丙烷硼烷中的一种或多种的含Alane的前体。 其他方法包括将基底表面暴露于金属前体和三甲基胺丙烷硼烷。

    SELECTIVE ETCH FOR METAL-CONTAINING MATERIALS
    83.
    发明申请
    SELECTIVE ETCH FOR METAL-CONTAINING MATERIALS 有权
    含金属材料的选择性蚀刻

    公开(公告)号：US20150129545A1

    公开(公告)日：2015-05-14

    申请号：US14512973

    申请日：2014-10-13

    Applicant: Applied Materials, Inc.

    Inventor： Nitin K. Ingle ,  Jessica Sevanne Kachian ,  Lin Xu ,  Soonam Park ,  Xikun Wang ,  Jeffrey W. Anthis

    IPC: C23F1/12 ,  H01J37/32 ,  C23F1/02

    CPC classification number: H01L21/3065 ,  C23F1/02 ,  C23F1/12 ,  C23F4/00 ,  H01J37/3244 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

    Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. A remote plasma is used to excite the halogen-containing precursor and a local plasma may be used in embodiments. Metal-containing materials on the substrate may be pretreated using moisture or another OH-containing precursor before exposing the resulting surface to remote plasma excited halogen effluents in embodiments.

    Abstract translation: 描述了从衬底表面选择性地蚀刻含金属材料的方法。 相对于含硅膜，例如硅，多晶硅，氧化硅，硅锗和/或氮化硅，蚀刻选择性去除含金属的材料。 这些方法包括将含金属的材料暴露于基底处理区域中含有卤素的物质。 使用远程等离子体来激发含卤素的前体，并且在实施方案中可以使用局部等离子体。 在实施方案中，在将所得表面暴露于远离等离子体激发的卤素流出物之前，可以使用水分或其它含OH前体对基材上的含金属材料进行预处理。

    Methods for depositing films comprising cobalt and cobalt nitrides
    84.
    发明授权
    Methods for depositing films comprising cobalt and cobalt nitrides 有权
    用于沉积包含钴和钴的氮化物的膜的方法

    公开(公告)号：US09005704B2

    公开(公告)日：2015-04-14

    申请号：US14198776

    申请日：2014-03-06

    Applicant: Applied Materials, Inc.

    Inventor： David Thompson ,  Jeffrey W. Anthis ,  David Knapp ,  Benjamin Schmiege

    IPC: C23C16/14 ,  C23C16/34 ,  H05H1/24 ,  C23C16/42 ,  C23C16/18 ,  C23C16/455

    CPC classification number: C23C16/42 ,  C23C16/18 ,  C23C16/34 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/76843

    Abstract: Cobalt-containing films, as well as methods for providing the cobalt-containing films. Certain methods pertain to exposing a substrate surface to a precursor and a co-reactant to provide a cobalt-containing film, the first precursor having a structure represented by: wherein each R is independently C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics, L is a coordinating ligand comprising a Lewis base.

    Abstract translation: 含钴膜，以及提供含钴膜的方法。 某些方法涉及将底物表面暴露于前体和共反应物以提供含钴膜，第一前体具有由以下表示的结构：其中每个R独立地为C 1 -C 6取代或未取代的烷烃，支链或 支链烷烃，取代或未取代的烯烃，支链或非支链烯烃，取代或未取代的炔烃，支链或非支链炔烃或取代或未取代的芳烃，L是包含路易斯碱的配位配体。

    COPPER REFLOW BY SURFACE MODIFICATION
    85.
    发明申请
    COPPER REFLOW BY SURFACE MODIFICATION 有权

    公开(公告)号：US20240420966A1

    公开(公告)日：2024-12-19

    申请号：US18211044

    申请日：2023-06-16

    Applicant: Applied Materials, Inc.

    Inventor： Zhiyuan Wu ,  Zheng Ju ,  Feng Chen ,  Kevin Kashefi ,  Feng Q. Liu ,  Jeffrey W. Anthis

    IPC: H01L21/3213 ,  H01L21/3205

    Abstract: Embodiments of the disclosure relate to methods of etching a copper material. In some embodiments, the copper material is exposed to a halide reactant to form a copper halide species. The substrate is then heated to remove the copper halide species. In some embodiments, the etching methods are performed at relatively low temperatures. Additional embodiments of the disclosure relate to methods of copper gapfill. In some embodiments, a copper material within a substrate feature is exposed to a halide reactant to form a copper halide species. The copper halide species is then heated and flowed to fill at least a portion of the substrate feature. The reflow methods are performed at lower temperatures than similar reflow methods without formation of the copper halide species.

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