公开(公告)号：US09819327B2

公开(公告)日：2017-11-14

申请号：US14398049

申请日：2013-06-26

申请人： Saravana Maruthamuthu ,  Thorsten Meyer ,  Pablo Herrero ,  Andreas Wolter ,  Georg Seidemann ,  Mikael Knudsen ,  Pauli Jaervinen

发明人： Saravana Maruthamuthu ,  Thorsten Meyer ,  Pablo Herrero ,  Andreas Wolter ,  Georg Seidemann ,  Mikael Knudsen ,  Pauli Jaervinen

IPC分类号： H03H7/40 ,  H03H9/00 ,  H04B1/04 ,  H01Q5/335

CPC分类号： H03H9/0014 ,  H01Q5/335 ,  H03H7/40 ,  H04B1/0458

摘要： Techniques and configurations are disclosed for bulk acoustic wave resonator (BAWR) tuner circuits and their use in integrated circuit (IC) packages and mobile communication devices for radio frequency (RF) communication. In some embodiments, a mobile communication device may include an antenna; a transmitter circuit having an output port, a tuner circuit having one or more BAWRs, an antenna port coupled to the antenna, a transmitter port coupled to the output port of the transmitter circuit, and a control port; and a control circuit, coupled to the control port, configured to adjust an impedance of the tuner circuit, via adjustment of a BAWR or another component of the tuner circuit, based at least in part on an impedance of the antenna. Other embodiments may be described and/or claimed.

公开(公告)号：US09219034B2

公开(公告)日：2015-12-22

申请号：US13448583

申请日：2012-04-17

申请人： Thorsten Meyer ,  Grit Sommer

发明人： Thorsten Meyer ,  Grit Sommer

IPC分类号： H01L21/4763 ,  H01L23/525 ,  H01L23/522 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L23/525 ,  H01L23/3114 ,  H01L23/522 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L24/12 ,  H01L24/24 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/12105 ,  H01L2224/14 ,  H01L2224/1403 ,  H01L2224/16 ,  H01L2224/24011 ,  H01L2224/76155 ,  H01L2224/82102 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00

摘要： A module includes a semiconductor chip and a conductive layer arranged over the semiconductor chip. The module also includes a spacer structure arranged to deflect the conductive layer away from the semiconductor chip.

摘要翻译： 模块包括半导体芯片和布置在半导体芯片上的导电层。 该模块还包括间隔结构，其布置成使导电层偏离半导体芯片。

公开(公告)号：US20150282367A1

公开(公告)日：2015-10-01

申请号：US14227977

申请日：2014-03-27

申请人： Hans-Joachim Barth ,  Reinhard Mahnkopf ,  Sven Albers ,  Thorsten Meyer

发明人： Hans-Joachim Barth ,  Reinhard Mahnkopf ,  Sven Albers ,  Thorsten Meyer

IPC分类号： H05K7/02 ,  H05K13/00 ,  H05K3/36

CPC分类号： H05K7/02 ,  H01L23/3128 ,  H01L24/19 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/16 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24145 ,  H01L2224/32145 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06558 ,  H01L2924/15311 ,  H05K3/36 ,  H05K7/023 ,  H05K13/00 ,  H05K2203/06 ,  Y10T156/10

摘要： An electronic assembly that includes a first electronic component that includes a first substrate having a front side and a back side and at least one electronic assembly mounted on the front side of the first substrate, a second electronic component that includes a second substrate having a front side and a back side and at least one electronic assembly mounted on the front side of the second substrate, and wherein the back side of the first substrate is directly attached to the back side of the second substrate.

摘要翻译： 一种电子组件，其包括第一电子部件，所述第一电子部件包括具有前侧和后侧的第一基板和安装在所述第一基板的前侧上的至少一个电子组件，所述第二电子部件包括具有前部的第二基板 侧面和背面以及安装在第二基板的前侧上的至少一个电子组件，并且其中第一基板的背面直接附接到第二基板的背面。

公开(公告)号：US20140361387A1

公开(公告)日：2014-12-11

申请号：US13910133

申请日：2013-06-05

申请人： Thorsten Meyer ,  Gerald Ofner ,  Christian Mueller ,  Reinhard Mahnkopf ,  Christian Geissler ,  Andreas Augustin

发明人： Thorsten Meyer ,  Gerald Ofner ,  Christian Mueller ,  Reinhard Mahnkopf ,  Christian Geissler ,  Andreas Augustin

IPC分类号： B81B7/00 ,  B81C1/00

CPC分类号： B81B7/0077 ,  B81B7/007 ,  B81B2207/012 ,  B81B2207/095 ,  B81C1/00333 ,  H01L24/19 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/24137 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2924/1431 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A chip arrangement may include: a mold compound; and a microelectromechanical systems device at least partially embedded in the mold compound.

摘要翻译： 芯片布置可以包括：模具化合物; 以及至少部分地嵌入模具化合物中的微机电系统装置。

公开(公告)号：US08754522B2

公开(公告)日：2014-06-17

申请号：US13281795

申请日：2011-10-26

申请人： Thorsten Meyer ,  Gerald Ofner

发明人： Thorsten Meyer ,  Gerald Ofner

IPC分类号： H01L23/34

CPC分类号： H01L24/19 ,  H01L21/568 ,  H01L21/6835 ,  H01L22/20 ,  H01L23/3121 ,  H01L23/5389 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/50 ,  H01L2221/68359 ,  H01L2224/04105 ,  H01L2224/20 ,  H01L2224/211 ,  H01L2224/24137 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2224/96 ,  H01L2224/82 ,  H01L2924/00

摘要： Repairable semiconductor device and method. In one embodiment a method, provides a first body having a first semiconductor chip and a first metal layer. A second body includes a second semiconductor chip and a second metal layer. Metal of the first metal layer is removed. The first semiconductor chip is removed from the first body. The second body is attached to the first body. The first metal layer is electrically coupled to the second metal layer.

摘要翻译： 可修复的半导体器件和方法。 在一个实施例中，一种方法提供了具有第一半导体芯片和第一金属层的第一主体。 第二主体包括第二半导体芯片和第二金属层。 第一金属层的金属被去除。 第一半导体芯片从第一主体移除。 第二个身体连接到第一个身体。 第一金属层电耦合到第二金属层。

公开(公告)号：US08716859B2

公开(公告)日：2014-05-06

申请号：US13346993

申请日：2012-01-10

申请人： Thorsten Meyer ,  Gerald Ofner ,  Bernd Waidhas

发明人： Thorsten Meyer ,  Gerald Ofner ,  Bernd Waidhas

IPC分类号： H01L23/52

CPC分类号： H01L24/81 ,  H01L21/568 ,  H01L23/3135 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/5389 ,  H01L24/14 ,  H01L24/17 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/16 ,  H01L2224/0231 ,  H01L2224/02371 ,  H01L2224/02373 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/3511 ,  H01L2924/00

摘要： A flip chip package structure is proposed in which a redistribution layer (RDL) is disposed on a surface of both a semiconductor chip and one or more lateral extensions of the semiconductor chip surface. The lateral extensions may be made using, e.g., a reconstituted wafer to implement a fanout region lateral to one or more sides of the semiconductor chip. One or more electrical connectors such as solder bumps or copper cylinders may be applied to the RDL, and an interposer such as a PCB interposer may be connected to the electrical connectors. In this way, a relatively tight semiconductor pad pitch may be accommodated and translated to an appropriate circuit board pitch without necessarily requiring a silicon or glass interposer.

摘要翻译： 提出了一种倒装芯片封装结构，其中再分配层（RDL）设置在半导体芯片和半导体芯片表面的一个或多个侧向延伸部分的表面上。 横向延伸部可以使用例如重构的晶片来实现半导体芯片的一个或多个侧面的横向扇出区域。 可以将一个或多个电连接器（例如焊料凸块或铜圆筒）施加到RDL，并且诸如PCB插入器的插入件可以连接到电连接器。 以这种方式，可以容纳相对紧凑的半导体衬垫间距并将其转换成适当的电路板间距，而不需要硅或玻璃插入件。

公开(公告)号：US20140094512A1

公开(公告)日：2014-04-03

申请号：US14037966

申请日：2013-09-26

申请人： Nikolas Gunkel ,  Thorsten Meyer ,  John Michael Graettinger

发明人： Nikolas Gunkel ,  Thorsten Meyer ,  John Michael Graettinger

IPC分类号： A23K1/16 ,  A23K1/18 ,  C07D311/04

CPC分类号： C07D311/04 ,  A23K20/111 ,  A23K20/121 ,  A23K20/132 ,  A23K20/137 ,  A23K50/10 ,  C07D311/58

摘要： The present invention relates to compositions and methods for modulating the degree of adipose tissue deposited intramuscularly in cattle by administration of a retinoic receptor antagonist or inverse agonist and compounds for use in such method.

摘要翻译： 本发明涉及通过施用视黄酸受体拮抗剂或反向激动剂和用于这种方法的化合物来调节牛肌内沉积的脂肪组织的程度的组合物和方法。

公开(公告)号：US08569495B2

公开(公告)日：2013-10-29

申请号：US12808897

申请日：2008-12-16

申请人： Christophe Pierre Alain Chassaing ,  Jörg Schröder ,  Thomas Simon Ilg ,  Manfred Uphoff ,  Thorsten Meyer

发明人： Christophe Pierre Alain Chassaing ,  Jörg Schröder ,  Thomas Simon Ilg ,  Manfred Uphoff ,  Thorsten Meyer

IPC分类号： C07D295/00 ,  A61K31/497 ,  A61K31/4965

CPC分类号： C07D211/60 ,  C07D211/26 ,  C07D295/108 ,  C07D487/08

摘要： This invention is directed to compounds and salts that are generally useful as anthelmintic agents or as intermediates in processes for making anthelmintic agents. This invention also is directed to processes for making the compounds and salts, pharmaceutical compositions and kits comprising the compounds and salts, uses of the compounds and salts to make medicaments, and treatments comprising the administration of the compounds and salts to animals in need of the treatments.

公开(公告)号：US08502307B2

公开(公告)日：2013-08-06

申请号：US12953682

申请日：2010-11-24

申请人： Christoph Kadow ,  Thorsten Meyer

发明人： Christoph Kadow ,  Thorsten Meyer

IPC分类号： H01L29/66

CPC分类号： H01L27/088 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit includes a semiconductor carrier including a first side and a second side opposite the first side. An FET is in a first area of the semiconductor carrier, and has a drain electrically coupled to a drain contact area at the first side and a source electrically coupled to a source contact area at the second side. First circuit elements are in a second area of the semiconductor carrier. The second area is electrically insulated from the semiconductor carrier surrounding the second area via a trench insulation extending through the semiconductor carrier from the first side to the second side. An interconnection level electrically interconnects the first circuit elements at the second side, and is electrically insulated from the source contact area in the entire second area via an insulating layer at the second side. A conductive pathway extends through the semiconductor carrier from the first side to the second side, and is electrically insulated from the semiconductor carrier surrounding the conductive pathway. At least one of the first circuit elements is electrically coupled to a contact area at the first side via the conductive pathway.

摘要翻译： 集成电路包括半导体载体，其包括第一侧和与第一侧相对的第二侧。 FET位于半导体载体的第一区域中，并且具有电耦合到第一侧的漏极接触区域的漏极和与第二侧的源极接触区域电耦合的源极。 第一电路元件位于半导体载体的第二区域中。 第二区域通过从第一侧延伸穿过半导体载体的沟槽绝缘体与第二区域周围的半导体载体电绝缘。 互连电平在第二侧电连接第一电路元件，并且在第二侧通过绝缘层与整个第二区域中的源极接触区域电绝缘。 导电路径从第一侧延伸穿过半导体载体到第二侧，并且与围绕导电路径的半导体载体电绝缘。 第一电路元件中的至少一个经由导电路径电耦合到第一侧的接触区域。

公开(公告)号：US08431988B2

公开(公告)日：2013-04-30

申请号：US11262483

申请日：2005-10-28

申请人： Franz Hirler ,  Uwe Wahl ,  Thorsten Meyer ,  Michael Rüb ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Carsten Schäffer

发明人： Franz Hirler ,  Uwe Wahl ,  Thorsten Meyer ,  Michael Rüb ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Carsten Schäffer

IPC分类号： H01L29/66

CPC分类号： H01L29/66689 ,  H01L21/26586 ,  H01L29/0696 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/41758 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66666 ,  H01L29/66704 ,  H01L29/78 ,  H01L29/7825

摘要： A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.

摘要翻译： 横向沟槽晶体管具有半导体本体，其具有嵌入与半导体本体隔离的栅电极的源极区，源极接触，体区，漏极区和栅极沟槽。 重掺杂半导体区域设置在体区内或与其相邻，并且与源极接触电连接，并且其掺杂剂类型对应于身体区域。