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公开(公告)号：US10446391B2
公开(公告)日：2019-10-15
申请号：US13298570
申请日：2011-11-17
IPC分类号： H01L29/06 , H01L21/02 , H01L33/12 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/02
摘要： In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
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公开(公告)号：US10347805B2
公开(公告)日：2019-07-09
申请号：US15898347
申请日：2018-02-16
申请人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
发明人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
摘要： In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
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公开(公告)号：US20180190883A1
公开(公告)日：2018-07-05
申请号：US15898347
申请日：2018-02-16
申请人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
发明人： Ken Kitamura , Masato Toita , Hironori Ishii , Yuting Wang , Leo J. Schowalter , Jianfeng Chen , James R. Grandusky
CPC分类号： H01L33/56 , H01L33/54 , H01L33/58 , H01L2933/005 , H01L2933/0058
摘要： In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
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84.发明申请公开(公告)号：US20140264263A1
公开(公告)日：2014-09-18
申请号：US14208379
申请日：2014-03-13
CPC分类号： H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/325 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/60 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058
摘要： In various embodiments, light-emitting devices incorporate smooth contact layers and polarization doping (i.e., underlying layers substantially free of dopant impurities) and exhibit high photon extraction efficiencies.
摘要翻译： 在各种实施例中，发光器件包括平滑的接触层和偏振掺杂（即，基本上不含掺杂剂杂质的下层）并且表现出高的光子提取效率。
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公开(公告)号：US20100264460A1
公开(公告)日：2010-10-21
申请号：US12764584
申请日：2010-04-21
IPC分类号： H01L29/205 , H01L21/20
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0262 , H01L33/025 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/32
摘要： In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
摘要翻译： 在各种实施例中，半导体器件包括氮化铝单晶衬底，设置在其上的假晶应变层，其包括AlN，GaN，InN或其合金中的至少一种，并且在应变层上设置半导体层 这与衬底晶格失配并基本上松弛。
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公开(公告)号：US20080187016A1
公开(公告)日：2008-08-07
申请号：US12020006
申请日：2008-01-25
CPC分类号： H01L21/0262 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L33/08 , H01L33/12
摘要： Semiconductor structures are fabricated to include strained epitaxial layers exceeding a predicted critical thickness thereof.
摘要翻译： 制造半导体结构以包括超过其预测临界厚度的应变外延层。
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87.发明授权公开(公告)号：US10777706B2
公开(公告)日：2020-09-15
申请号：US16161320
申请日：2018-10-16
申请人： Ken Kitamura , Jianfeng Chen , Leo J. Schowalter
发明人： Ken Kitamura , Jianfeng Chen , Leo J. Schowalter
摘要： In various embodiments, an electrochemical process is utilized to remove at least a portion of a substrate from multiple singulated or unsingulated electronic-device or optoelectronic-device dies. The dies may be attached to a submount for the removal process, and the dies may be immersed in or non-immersively contact an electrolyte during the removal process.
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公开(公告)号：US10756234B2
公开(公告)日：2020-08-25
申请号：US15977031
申请日：2018-05-11
申请人： James R. Grandusky , Leo J. Schowalter , Craig Moe
发明人： James R. Grandusky , Leo J. Schowalter , Craig Moe
摘要： In various embodiments, extraction efficiency of light-emitting devices fabricated on aluminum nitride substrates is enhanced via removal of at least a portion of the substrate.
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89.发明授权公开(公告)号：US10700237B2
公开(公告)日：2020-06-30
申请号：US16239728
申请日：2019-01-04
申请人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
发明人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
IPC分类号： H01L33/06 , H01L33/32 , H01L33/14 , H01L33/46 , H01L33/00 , H01L33/02 , H01L33/36 , H01L33/40
摘要： In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.
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90.发明授权公开(公告)号：US10211368B2
公开(公告)日：2019-02-19
申请号：US15587879
申请日：2017-05-05
申请人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
发明人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
IPC分类号： H01L33/06 , H01L33/14 , H01L33/32 , H01L33/46 , H01L33/00 , H01L33/02 , H01L33/36 , H01L33/40
摘要： In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.
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