Film forming method and apparatus
    83.
    发明申请
    Film forming method and apparatus 审中-公开
    成膜方法和装置

    公开(公告)号:US20070243327A1

    公开(公告)日:2007-10-18

    申请号:US11638672

    申请日:2006-12-14

    IPC分类号: C23C16/40

    摘要: In the film forming method of the present invention, a substrate is first received in a processing vessel. Then, a film-forming gas including an organic silicon and an additive gas including a paraffin hydrocarbon gas and/or a hydrogen gas are introduced into the processing vessel, and the film-forming gas and the additive gas are then converted into plasma. In this manner, a carbon-hydrogen-added silicon oxide film (SiCOH film) is formed on the substrate. Alternatively, the film-forming gas is first introduced into the processing vessel containing the substrate and is then converted into plasma to form the SiCOH film on the substrate. Subsequently, the additive gas is introduced into the processing vessel and is then converted into plasma to post-treat the substrate having the SiCOH film formed thereon.

    摘要翻译: 在本发明的成膜方法中,首先在处理容器中接收基板。 然后,将包含有机硅和包含石蜡烃气体和/或氢气的添加气体的成膜气体引入处理容器中,然后将成膜气体和添加气体转化为等离子体。 以这种方式,在基板上形成碳氢氧化硅膜(SiCOH膜)。 或者,首先将成膜气体引入含有基板的处理容器中,然后将其转化为等离子体,以在基板上形成SiCOH膜。 随后,将添加气体引入处理容器中,然后将其转化为等离子体以对其上形成有SiCOH膜的基板进行后处理。

    Peeling-off method and reworking method of resist film
    84.
    发明申请
    Peeling-off method and reworking method of resist film 审中-公开
    抗剥离膜剥离方法及修复方法

    公开(公告)号:US20070184379A1

    公开(公告)日:2007-08-09

    申请号:US10591345

    申请日:2005-03-01

    IPC分类号: G03C1/00

    摘要: A processing method of a substrate includes: a step of forming an Si—C based film and a resist film in turn on an objective film to be etched that has been formed on a substrate; a first etching step of etching the Si—C based film making use of the resist film as a mask; and a second etching step of etching the objective film to be etched making use of the resist film and the Si—C based film as a mask. The processing method further includes a peeling-off step of peeling-off the resist film at a desired timing. The peeling-off step includes a preparing step of preparing an organic solvent as a release agent, and an applying step of applying the organic solvent to the resist film.

    摘要翻译: 基板的处理方法包括:依次形成Si-C基膜和抗蚀剂膜的步骤,所述Si-C基膜和抗蚀剂膜依次形成在基板上形成的待蚀刻目标膜上; 蚀刻使用抗蚀剂膜作为掩模的Si-C基膜的第一蚀刻步骤; 以及使用抗蚀剂膜和Si-C基膜作为掩模蚀刻待蚀刻的目标膜的第二蚀刻步骤。 该处理方法还包括在期望的时刻剥离抗蚀剂膜的剥离步骤。 剥离步骤包括制备作为脱模剂的有机溶剂的制备步骤和将有机溶剂施加到抗蚀剂膜的施加步骤。

    Swiveling work machine
    85.
    发明申请
    Swiveling work machine 有权
    回转作业机

    公开(公告)号:US20060226680A1

    公开(公告)日:2006-10-12

    申请号:US11371341

    申请日:2006-03-08

    IPC分类号: B60J7/00

    CPC分类号: E02F9/08 E02F9/163

    摘要: A swiveling work machine includes a traveling apparatus, a swivel base mounted on the traveling apparatus to be pivotable about a vertical axis, a hood disposed at a rear portion of the swivel base, the hood accommodating therein an engine, a support frame being disposed across over the engine, and a ROPS having a front end thereof fixed to the swivel base and a rear end thereof fixed to an upper portion of the support frame. The support frame includes a front leg member disposed on one lateral side of the ROPS, the front leg member extending to vicinity of a position forwardly of the swivel base.

    摘要翻译: 旋转作业机包括行走装置,安装在行进装置上的旋转基座,可绕垂直轴线转动,设置在旋转底座后部的发动机罩,容纳在其中的发动机,支撑框架横跨 并且ROPS具有前端固定在旋转底座上,后端固定在支撑框架的上部。 支撑框架包括设置在ROPS的一个侧面上的前腿构件,前腿构件延伸到旋转底座的前方的位置附近。

    Magnetic shield member, magnetic shield structure, and magnetic memory device
    88.
    发明申请
    Magnetic shield member, magnetic shield structure, and magnetic memory device 失效
    磁屏蔽构件,磁屏蔽结构和磁存储装置

    公开(公告)号:US20050230788A1

    公开(公告)日:2005-10-20

    申请号:US11053650

    申请日:2005-02-08

    摘要: It is an object of the invention to relax magnetic saturation and realize a high-performance magnetic shield effect that is suitable for magnetic devices such as an MRAM. A magnetic shield member of the invention is suitable for a magnetic memory device in which a magnetic random access memory (MRAM) consisting of a TMR element formed by stacking a magnetization fixed layer with a direction of magnetization fixed and a magnetic layer, in which a direction of magnetization can be changed, via a tunnel barrier layer is sealed by a sealing material such as resin. A planar shape or a sectional shape of magnetic shield plates provided on the sealing material in order to magnetically shield the MRAM is a shape in which a side substantially perpendicular to a direction of an outer magnetic field and a side substantially parallel to the direction of an outer magnetic field are not orthogonal to each other, in particular, circular, polygonal, or the like, whereby it is possible to relax magnetic saturation of the magnetic shield plate and keep the magnetic shield effect.

    摘要翻译: 本发明的目的是松弛磁饱和,实现适用于MRAM等磁性装置的高性能磁屏蔽效果。 本发明的磁屏蔽部件适用于磁性随机存取存储器(MRAM),其中磁性随机存取存储器(MRAM)由通过堆积固定磁化方向的磁化固定层形成的TMR元件和磁性层组成,其中, 磁化方向可以改变,通过隧道阻挡层被树脂等密封材料密封。 设置在密封材料上以磁屏蔽MRAM的磁屏蔽板的平面形状或截面形状是这样的形状,其中,基本上垂直于外部磁场的方向的侧和基本上平行于 外部磁场彼此不正交,特别是圆形,多边形等,从而可以缓和磁屏蔽板的磁饱和并保持磁屏蔽效果。

    Magnetic memory device
    89.
    发明申请
    Magnetic memory device 审中-公开
    磁存储器件

    公开(公告)号:US20050226030A1

    公开(公告)日:2005-10-13

    申请号:US10504626

    申请日:2003-12-12

    摘要: A magnetic memory device in which an MRAM element is magnetically shielded from a large external magnetic field in an satisfactory manner, making it possible to surely achieve an operation free of problems in a magnetic field generated by the environment in which the MRAM element is used. A magnetic random access memory (MRAM) (30) is constituted by a TMR element (10) having a magnetized pinned layer (4), (6) with fixed direction of magnetization and a magnetic layer (memory layer) (2) with changeable direction of magnetization stacked on one another, mounted on a substrate together with another element (38), such as a DRAM, wherein a magnetic shielding layer (33), (34) is formed in a region corresponding to an area occupied by the MRAM element (30) or/and a magnetic shielding layer (33), (34) is with a distance of 15 mm or less between the opposite sides (especially, a length or a width).

    摘要翻译: 一种磁记录装置,其中MRAM元件以令人满意的方式从大的外部磁场磁屏蔽,使得可以可靠地实现在由使用MRAM元件的环境产生的磁场中没有问题的操作。 磁性随机存取存储器(MRAM)(30)由具有固定磁化方向的磁化钉扎层(4),(6)的TMR元件(10)和具有可变形的磁性层(存储层)(2)构成 彼此堆叠的磁化方向,与诸如DRAM的另一元件(38)一起安装在基板上,其中在与MRAM占据的区域对应的区域中形成磁屏蔽层(33)(34) 元件(30)或/和磁屏蔽层(33),(34)在相对侧(特别是长度或宽度)之间的距离为15mm以下。

    Method of magnetizing rotary machine field core unit
    90.
    发明授权
    Method of magnetizing rotary machine field core unit 失效
    磁化旋转机场磁芯单元的方法

    公开(公告)号:US5502424A

    公开(公告)日:1996-03-26

    申请号:US399886

    申请日:1995-03-07

    IPC分类号: H01F13/00 H02K1/22 H02K15/03

    摘要: An alternating current generator for vehicle has a permanent magnet in the rotary field core unit. Providing such magnet is effective to reduce leakage magnetic flux and the size of the machine. In order to magnetize the magnet without trouble caused by machined chips or iron powder, the magnet is magnetized after the rotary field core has been machined. While the magnet is magnetized in a short period by a pulse current, the field coil is short-circuited. The field coil is subjected to magnetizing flux passing therethrough and generates short-circuit current and, consequently, counter magnetomotive force, which prevents leakage of the magnetizing flux.

    摘要翻译: 用于车辆的交流发电机在旋转磁芯单元中具有永磁体。 提供这样的磁体有效地减少漏磁通和机器的尺寸。 为了磁化磁体,无需加工芯片或铁粉引起的故障,磁体在旋转磁芯加工后被磁化。 当磁体在短时间内被脉冲电流磁化时,励磁线圈短路。 励磁线圈受到通过其的磁化通量的产生,产生短路电流,从而产生相对的磁动势,防止磁化剂的泄漏。