摘要:
A prepreg for a printed wiring board, comprising a cyanate ester resin having a specific structure, a non-halogen epoxy resin, a silicone rubber powder as a rubber elasticity powder, an inorganic filler and a base material, which prepreg retains heat resistance owing to a stiff resin skeleton structure, has high-degree flame retardancy without the use of a halogen compound or a phosphorus compound as a flame retardant, and has a small thermal expansion coefficient in plane direction without using a large amount of inorganic filler, and a laminate comprising the above prepreg.
摘要:
A prepreg, for printed wiring boards, comprising a flame resistant resin composition containing a specific cyanate ester resin, a nonhalogen epoxy resin, boehmite which is hardly soluble in acids or alkalis and a silicone powder which is a flame retardant assistant, and a base material, which prepreg retains high-degree flame resistance without a halogen compound and has excellent resistance to chemical, high glass transition temperature, excellent soldering heat resistance and excellent heat resistance after moisture absorption, and a laminate or metal-foil-clad laminate obtained by curing the above prepreg.
摘要:
In the film forming method of the present invention, a substrate is first received in a processing vessel. Then, a film-forming gas including an organic silicon and an additive gas including a paraffin hydrocarbon gas and/or a hydrogen gas are introduced into the processing vessel, and the film-forming gas and the additive gas are then converted into plasma. In this manner, a carbon-hydrogen-added silicon oxide film (SiCOH film) is formed on the substrate. Alternatively, the film-forming gas is first introduced into the processing vessel containing the substrate and is then converted into plasma to form the SiCOH film on the substrate. Subsequently, the additive gas is introduced into the processing vessel and is then converted into plasma to post-treat the substrate having the SiCOH film formed thereon.
摘要:
A processing method of a substrate includes: a step of forming an Si—C based film and a resist film in turn on an objective film to be etched that has been formed on a substrate; a first etching step of etching the Si—C based film making use of the resist film as a mask; and a second etching step of etching the objective film to be etched making use of the resist film and the Si—C based film as a mask. The processing method further includes a peeling-off step of peeling-off the resist film at a desired timing. The peeling-off step includes a preparing step of preparing an organic solvent as a release agent, and an applying step of applying the organic solvent to the resist film.
摘要:
A swiveling work machine includes a traveling apparatus, a swivel base mounted on the traveling apparatus to be pivotable about a vertical axis, a hood disposed at a rear portion of the swivel base, the hood accommodating therein an engine, a support frame being disposed across over the engine, and a ROPS having a front end thereof fixed to the swivel base and a rear end thereof fixed to an upper portion of the support frame. The support frame includes a front leg member disposed on one lateral side of the ROPS, the front leg member extending to vicinity of a position forwardly of the swivel base.
摘要:
A memory device is proposed which enables to guarantee the operation of MRAM elements being magnetically shielded against a large external magnetic fields without being affected by an internal leakage magnetic field. The MRAM elements 30 which are shielded by magnetic shield layers 33, 34 are placed at an intermediate region 41 avoiding an edge region 43 and a center region 42 of the magnetic shield layers 33, 34 so that the MRAM element is secured to operate normally without being affected by the internal leakage magnetic field avoiding the edge region 43 where the magnetic shield effect is reduced by the exterior magnetic field, and avoiding the central region 42 where the internal leakage magnetic field is large.
摘要:
A method for producing a magnetic particle forming a magnetic material for absorbing electromagnetic waves comprises the steps of mixing an organometallic complex or a metal salt with a chain polymer and dissolving the mixture in a solvent (step S1); raising the temperature of the mixture to reaction temperature (step S2), carrying out a reaction at the reaction temperature (step S3); and forming the magnetic particle having a structure that the periphery of each fine particle formed from the organometallic complex or the metal salt is surrounded by the chain polymer and recovering the formed magnetic particle after the reaction (step S4). The magnetic particle has a nanogranular structure to become a magnetic material for absorbing electromagnetic waves. Such a magnetic particle is produced by a wet reaction. Thus, a larger amount of magnetic particle can be produced by one reaction.
摘要:
It is an object of the invention to relax magnetic saturation and realize a high-performance magnetic shield effect that is suitable for magnetic devices such as an MRAM. A magnetic shield member of the invention is suitable for a magnetic memory device in which a magnetic random access memory (MRAM) consisting of a TMR element formed by stacking a magnetization fixed layer with a direction of magnetization fixed and a magnetic layer, in which a direction of magnetization can be changed, via a tunnel barrier layer is sealed by a sealing material such as resin. A planar shape or a sectional shape of magnetic shield plates provided on the sealing material in order to magnetically shield the MRAM is a shape in which a side substantially perpendicular to a direction of an outer magnetic field and a side substantially parallel to the direction of an outer magnetic field are not orthogonal to each other, in particular, circular, polygonal, or the like, whereby it is possible to relax magnetic saturation of the magnetic shield plate and keep the magnetic shield effect.
摘要:
A magnetic memory device in which an MRAM element is magnetically shielded from a large external magnetic field in an satisfactory manner, making it possible to surely achieve an operation free of problems in a magnetic field generated by the environment in which the MRAM element is used. A magnetic random access memory (MRAM) (30) is constituted by a TMR element (10) having a magnetized pinned layer (4), (6) with fixed direction of magnetization and a magnetic layer (memory layer) (2) with changeable direction of magnetization stacked on one another, mounted on a substrate together with another element (38), such as a DRAM, wherein a magnetic shielding layer (33), (34) is formed in a region corresponding to an area occupied by the MRAM element (30) or/and a magnetic shielding layer (33), (34) is with a distance of 15 mm or less between the opposite sides (especially, a length or a width).
摘要:
An alternating current generator for vehicle has a permanent magnet in the rotary field core unit. Providing such magnet is effective to reduce leakage magnetic flux and the size of the machine. In order to magnetize the magnet without trouble caused by machined chips or iron powder, the magnet is magnetized after the rotary field core has been machined. While the magnet is magnetized in a short period by a pulse current, the field coil is short-circuited. The field coil is subjected to magnetizing flux passing therethrough and generates short-circuit current and, consequently, counter magnetomotive force, which prevents leakage of the magnetizing flux.